JPH0551271A - Joined body constituted of metallic sheet and ceramic substrate - Google Patents
Joined body constituted of metallic sheet and ceramic substrateInfo
- Publication number
- JPH0551271A JPH0551271A JP3231091A JP23109191A JPH0551271A JP H0551271 A JPH0551271 A JP H0551271A JP 3231091 A JP3231091 A JP 3231091A JP 23109191 A JP23109191 A JP 23109191A JP H0551271 A JPH0551271 A JP H0551271A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- metal plate
- joined body
- plate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
Landscapes
- Ceramic Products (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、金属板とセラミックス
基板とからなる接合体に関し、さらに詳しくは、耐ヒ−
トサイクル性に優れた接合体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonded body composed of a metal plate and a ceramics substrate, and more specifically, a heat resistance
The present invention relates to a joined body having excellent cycle characteristics.
【０００２】[0002]
【従来の技術】一般にセラミックスは、耐熱性、耐摩耗
性に優れ、さらには高電気抵抗、高硬度であるという特
徴を有している。この特徴を利用してセラミックス板と
金属板とを接合した接合体が電子部品、機械部品等に多
く使用されている。しかしながらセラミックスと金属体
とは異なった原子結合をしているので、このようなセラ
ミックス板と金属板とを接合する場合、反応性等の化学
的性質、熱膨張率等の物理的性貿が大きく異なる。2. Description of the Related Art Generally, ceramics are characterized by excellent heat resistance and wear resistance, and also high electrical resistance and hardness. A joined body obtained by joining a ceramic plate and a metal plate by utilizing this characteristic is often used for electronic parts, mechanical parts and the like. However, since the ceramics and the metal body have different atomic bonds, when bonding such a ceramic plate and a metal plate, chemical properties such as reactivity and physical trade such as coefficient of thermal expansion are large. different.
【０００３】このように性質が異なったセラミックス板
と金属板とを高温で加熱し、冷却して接合させると熱膨
張係数の差から熱応力が発生し、これが残留応力とな
る。この残留応力が接合強度を低下させたり、セラミッ
クス板の破壊等を生じさせる。この残留応力を小さく
し、接合強度の低下の防止、およびセラミックス板の破
壊防止のため種々の接合方法が提案されてきた。When a ceramic plate and a metal plate having different properties are heated at a high temperature, cooled, and joined as described above, thermal stress is generated due to the difference in thermal expansion coefficient, and this becomes residual stress. This residual stress lowers the bonding strength and causes the ceramic plate to break. Various joining methods have been proposed to reduce the residual stress, prevent the joint strength from lowering, and prevent the ceramic plates from breaking.
【０００４】即ち、セラミックス板と金属板とを窒素ガ
スの如き不活性ガス雰囲気か真空雰囲気で加熱し、金属
板とセラミックス板とを直接接合させる方法（直接々合
方法）。またTi，Zrのような活性金属と低融点合金を作
るAg，Cu，Ni，Sn 等の金属を混合又は合金としたろう
材をセラミックス板と金属板の間に介在させて不活性ガ
ス雰囲気又は真空雰囲気下で加熱圧着する方法（活性金
属方法）、更にセラミックス板上にメタライズ層をもう
け、このメタライズ層を有するセラミックス板と金属板
とを金属ソルダ−で接合させる方法（メタライズ方法）
等多くの提案がなされているが、接合体を加熱し、次い
で冷却することを繰返して行うこと（この操作を以後、
「ヒ−トサイクル」ということがある）により接合強度
が低下したり、または接合体にクラックもしくは破壊が
生じる問題点が未だに解決されていない。That is, the ceramic plate and the metal plate are heated in an inert gas atmosphere such as nitrogen gas or in a vacuum atmosphere to directly bond the metal plate and the ceramic plate (direct bonding method). In addition, an active gas such as Ti or Zr and a brazing material that is a mixture or alloy of Ag, Cu, Ni, Sn, etc., which forms a low melting point alloy, is interposed between the ceramic plate and the metal plate, and an inert gas atmosphere or a vacuum atmosphere is provided. A method of thermocompression bonding underneath (active metal method), a method of further providing a metallized layer on the ceramic plate, and a method of joining the ceramic plate having this metallized layer and the metal plate with a metal solder (metallized method)
Although many proposals have been made, heating the bonded body and then cooling it repeatedly (this operation will be
The problem that the bonding strength is lowered or the bonded body is cracked or broken due to "sometimes called a heat cycle" has not yet been solved.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、従来技術が
有していた前述の問題点を解決しようとするものであ
り、従来全く知られていなかった金属板とセラミックス
基板とからなる接合体を提供することにある。DISCLOSURE OF THE INVENTION The present invention is intended to solve the above-mentioned problems of the prior art, and a bonded body composed of a metal plate and a ceramics substrate, which has never been known. To provide.
【０００６】[0006]
【課題を解決するための手段】本発明は、前述の問題点
を解決すべくなされたものであり、少くとも、セラミッ
クス基板の片面に、回路パタ−ンを有する金属板とセラ
ミックス基板とからなる接合体において、前記回路パタ
−ンを構成する個々の回路線が縁取加工処理されている
ことを特徴とする金属板とセラミックス基とからなる接
合体を提供するものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and is composed of a ceramic substrate and a metal plate having a circuit pattern on one surface of the ceramic substrate. In the joined body, the individual circuit lines constituting the circuit pattern are subjected to edging processing, and a joined body composed of a metal plate and a ceramic substrate is provided.
【０００７】しかして本発明によれば、耐ヒ−トサイク
ル性に優れた金属板とセラミックス基板とからなる接合
体が得られるのである。以下、本発明の構成要因につい
て、さらに詳細に説明する。Therefore, according to the present invention, it is possible to obtain a joined body composed of a metal plate and a ceramic substrate, which is excellent in heat cycle resistance. Hereinafter, constituent factors of the present invention will be described in more detail.
【０００８】本発明でいう「セラミックス」とは、特に
制限はないが酸化物系セラミックス及び非酸化物系セラ
ミックスである。酸化物系セラミックスは、例えばアル
ミナ（Al2O3）、マグネシヤ（MgO）及びジリコニヤ（Zr
O2）等が挙げられるが、中でもアルミナが好ましい。非
酸化物系セラミックスは、例えば窒化アルミ（AlN）、
炭化珪素（SiC）及び窒化珪素（Si3N4） 等が挙げられ
るが、中でも窒化アルミ、炭化珪素が好ましい。The "ceramics" referred to in the present invention are, but not limited to, oxide-based ceramics and non-oxide-based ceramics. Oxide-based ceramics are, for example, alumina (Al 2 O 3 ), magnesia (MgO) and zirconia (Zr
O 2 ), etc., but alumina is preferable. Non-oxide ceramics are, for example, aluminum nitride (AlN),
Examples thereof include silicon carbide (SiC) and silicon nitride (Si 3 N 4 ). Among them, aluminum nitride and silicon carbide are preferable.
【０００９】また、セラミックス板の板厚は、特に規制
するものではなくいづれの板厚でも良いが一般的には0.
2〜1.0m／m、好ましくは0.3〜0.8m／mである。Further, the thickness of the ceramic plate is not particularly limited and may be any thickness, but it is generally 0.
It is 2 to 1.0 m / m, preferably 0.3 to 0.8 m / m.
【００１０】本発明でいう「金属」とは、特に制限はな
いが、銅（Cu）、ニッケル（Ni）、クロ−ム（Cr）、コ
バルト、アルミニウム（Al）及びこれらの合金等が挙げ
られるが、中でも銅（Cu）、ニッケル（Ni）が好まし
く、特に銅及び銅金属を主体とした合金が好ましい。銅
金属としては、例えばJIS H3100で規定する銅金属が好
ましく、中でも無酸素銅（合金番号C1020）が好まし
い。The "metal" in the present invention is not particularly limited, but examples thereof include copper (Cu), nickel (Ni), chromium (Cr), cobalt, aluminum (Al) and alloys thereof. However, among them, copper (Cu) and nickel (Ni) are preferable, and an alloy mainly containing copper and copper metal is particularly preferable. As the copper metal, for example, a copper metal defined by JIS H3100 is preferable, and oxygen-free copper (alloy number C1020) is particularly preferable.
【００１１】また本発明で使用する金属板のうち、後工
程でエッチング等により、回路基板として使用される金
属板（以後、この金属板を「表面金属板（X）」とい
う）の板厚は、セラミックス基板を介して裏面に接合さ
れる金属板（以後この金属板を「裏面金属板（Y）」と
いう）の板厚と同等もしくは厚くすることができる。Among the metal plates used in the present invention, the plate thickness of the metal plate used as a circuit board (hereinafter, this metal plate is referred to as "surface metal plate (X)") by etching or the like in the later step is The thickness of the metal plate bonded to the back surface via the ceramic substrate (hereinafter, this metal plate will be referred to as “rear surface metal plate (Y)”) can be made equal to or thicker.
【００１２】XおよびYの板厚は特に制限されるものでは
なく、いづれの板厚でも良いが、Xは一般的に0.05〜0.7
m／m、好ましくは0.1〜0.5m／m、さらに好ましくは0.15
〜0.3m／mであり、Yは一般的には0.03〜0.65m／m、好ま
しくは0.1〜0.5m／m、さらに好ましくは 0.15〜0.3m／m
である。またXとYの板厚の関係は0.1X≦Y＜1.0X、好ま
しくは0.2X≦Y＜1.0X、さらに好ましくは0.3X≦Y＜1.0X
であることが望ましい。The plate thicknesses of X and Y are not particularly limited, and any plate thickness may be used, but X is generally 0.05 to 0.7.
m / m, preferably 0.1 to 0.5 m / m, more preferably 0.15
~ 0.3 m / m, Y is generally 0.03 to 0.65 m / m, preferably 0.1 to 0.5 m / m, more preferably 0.15 to 0.3 m / m
Is. The relationship between the plate thickness of X and Y is 0.1X ≦ Y <1.0X, preferably 0.2X ≦ Y <1.0X, more preferably 0.3X ≦ Y <1.0X.
Is desirable.
【００１３】本発明に用いるセラミックス基板と金属板
との接合方法は特に制限はないが、例えばセラミックス
板と金属板とを窒素ガスの如き不活性ガス雰囲気か真空
雰囲気で加熱し、金属板とセラミックス板とを直接接合
させる方法（直接々合方法）。The method of joining the ceramic substrate and the metal plate used in the present invention is not particularly limited. For example, the ceramic plate and the metal plate are heated in an inert gas atmosphere such as nitrogen gas or in a vacuum atmosphere to form the metal plate and the ceramic plate. A method of directly joining with a plate (direct joining method).
【００１４】またTi，Zrのような活性金属と低融点合金
を作るAg，Cu，Ni，Sn等の金属を混合又は合金としたろ
う材をセラミックス板と金属板の間に介在させて不活性
ガス雰囲気又は真空雰囲気下で加熱圧着する方法（活性
金属方法）、更にセラミックス板上にメタライズ層をも
うけ、このメタライズ層を有するセラミックスと金属体
とを金属ソルダ−で接合させる方法（メタライズ方法）
等があり、中でも直接々合方法及び活性金属方法が好ま
しく、特に活性金属方法が好適である。A brazing material, which is a mixture or alloy of active metals such as Ti and Zr and metals such as Ag, Cu, Ni and Sn, which forms a low melting point alloy, is interposed between the ceramic plate and the metal plate, and an inert gas atmosphere is provided. Alternatively, a method of thermocompression bonding in a vacuum atmosphere (active metal method), a method of further providing a metallized layer on a ceramic plate, and bonding the ceramic having the metallized layer and a metal body with a metal solder (metallized method)
Among them, the direct bonding method and the active metal method are preferable, and the active metal method is particularly preferable.
【００１５】本発明に用いる直接々合方法とは、具体的
には、例えばセラミックス板に金属板を載置し、これを
加熱炉に入れ、金属体の過度の酸化を防止するため、酸
素濃度を 20ppm以下に調整した不活性雰囲気又は真空雰
囲気中で最高加熱温度1060℃〜1083℃以内の温度で 5秒
〜15分間加熱した後、冷却して接合体を得る方法であ
る。The direct bonding method used in the present invention means, for example, placing a metal plate on a ceramic plate and placing the metal plate in a heating furnace to prevent excessive oxidation of the metal body. Is a method for obtaining a bonded body by heating at a maximum heating temperature of 1060 ° C to 1083 ° C for 5 seconds to 15 minutes in an inert atmosphere or vacuum atmosphere adjusted to 20 ppm or less, and then cooling.
【００１６】また活性金属方法とは、例えばセラミック
ス板と金属板との接合面に活性金ろう材を箔状、粉末
状、又粉末をバインダ−と均一に混練しペ−ストとし、
これをスクリ−ン印刷した後、この接合体を加熱炉に入
れ、不活性雰囲気又は真空度50〜1×10-6Torrの雰囲気
で最高加熱温度700〜950℃以内の温度で加熱時間3分〜6
0分間加熱した後、冷却して接合体を得る方法である。The active metal method is, for example, a paste, which is obtained by uniformly kneading an active gold brazing material in a foil form, a powder form, or a powder with a binder on a joint surface between a ceramic plate and a metal plate,
After screen printing this, put the bonded body in a heating furnace, and in an inert atmosphere or an atmosphere with a vacuum degree of 50 to 1 × 10 -6 Torr, a maximum heating temperature of 700 to 950 ° C and a heating time of 3 minutes. ~ 6
This is a method of obtaining a joined body by heating for 0 minutes and then cooling.
【００１７】活性金属ろう材としては特に制限はない
が、比較的低温加熱で接合させることができる、銀（A
g）、銅（Cu）、チタン（Ti）又は水素化チタン（TiH）
の混合物系、銀（Ag）、銅（Cu）、ニッケル（Ni）、チ
タン（Ti）又は水素化チタン（TiH）の混合物系、銀（A
g）、銅（Cu）、錫（Sn）、チタン又は水素化チタン（T
iH）の混合物系、銀（Ag）、ニッケル（Ni)、チタン又
は水素化チタンの混合物系及び銀（Ag）、銅（Cu）、ジ
ルコニヤ（Zr)又は水素化ジルコニヤの混合物系が挙げ
られるが、中でも銀、銅、チタン又は水素化チタンの混
合物系、銀、銅、ニッケル、チタン又は水素化チタンの
混合物系が好ましい。The active metal brazing material is not particularly limited, but silver (A
g), copper (Cu), titanium (Ti) or titanium hydride (TiH)
Mixture system, silver (Ag), copper (Cu), nickel (Ni), titanium (Ti) or titanium hydride (TiH) mixture system, silver (A
g), copper (Cu), tin (Sn), titanium or titanium hydride (T
iH) mixture system, silver (Ag), nickel (Ni), titanium or titanium hydride mixture system and silver (Ag), copper (Cu), zirconia (Zr) or hydrogenated zirconia mixture system. Above all, a mixture system of silver, copper, titanium or titanium hydride, and a mixture system of silver, copper, nickel, titanium or titanium hydride is preferable.
【００１８】次いで、上記のとおり得られた接合体のＸ
を従来使用されているエッチング方法及びレ−ザ−スク
ライズ法等により、回路パタ−ン処理することができ
る。ここで、回路パタ−ンにより描かれた個々の回路線
２にはそれぞれ縁取３が施されていることが肝要であ
る。Then, X of the joined body obtained as described above
The circuit pattern processing can be performed by the conventionally used etching method and laser squeeze method. Here, it is important that each circuit line 2 drawn by the circuit pattern is provided with an edge 3.
【００１９】縁取３の形状は特に規制するものではな
く、いづれの形状の縁取りでも良く、例えば、段差状態
を有しているもの（図２）及びほぼ直線状態となってい
るもの（図３）等がある。The shape of the edging 3 is not particularly limited and may be any shape, for example, one having a stepped state (FIG. 2) and one having a substantially linear state (FIG. 3). Etc.
【００２０】また縁取巾（ａ）は、特に規制するもので
はないが、一般的には0.05〜1.5m／m、好ましくは0.1〜
1.0m／m、さらに好ましくは0.2〜0.8m／mである。縁取
の形状が段差状態である場合、段差の高さ(ｂ)は、いづ
れの高さでも良いが、一般的に金属板の板厚（ｂ＋ｃ）
の10〜95％、好ましくは15〜85％、さらに好ましくは20
〜75％に相当する高さの範囲にあることが望ましい。The border width (a) is not particularly limited, but is generally 0.05 to 1.5 m / m, preferably 0.1 to 1.5 m / m.
It is 1.0 m / m, more preferably 0.2 to 0.8 m / m. When the shape of the edging is in a stepped state, the height of the stepped portion (b) may be any height, but generally the thickness of the metal plate (b + c)
10-95%, preferably 15-85%, more preferably 20
It is desirable to be in a height range corresponding to ~ 75%.
【００２１】また必要に応じ、Yにも上記のとおり、縁
取を施しても良い。このようにして得られた金属板とセ
ラミックス板との接合体は、製造時および加工時もしく
は使用時に受けるヒ−トサイクルに対しても接合強度が
低下することなく、またセラミックス基板にはクラック
もしくは破壊等の損傷が生じることが無い極めて有用な
接合体であり、業界に寄与する所、極めて大である。If necessary, Y may be trimmed as described above. The joined body of the metal plate and the ceramic plate thus obtained does not have a decrease in the joint strength even with respect to the heat cycle that is received at the time of manufacturing and processing or during use, and cracks or It is a very useful bonded body that does not cause damage such as breakage, and is extremely large as it contributes to the industry.
【００２２】以下実施例によりさらに詳しく説明する
が、本発明は実施例のみに限定されるべきものではない
ことは言うまでもない。The present invention will be described in more detail with reference to the following examples, but it goes without saying that the present invention should not be limited to the examples.
【００２３】実施例Ａ（接合体の調製） 比較例１ JIS H3100、金属番号C1020で規定する無酸素銅板（板厚
0.3m／mと0.3m／m、寸法45×30m／m）をそれぞれ用意し
た。セラミックス基板としてアルミナ基板（板厚 0.635
m／m、寸法45×30m／m）を用意し、両面に活性金属粉混
合ペ−スト（Ag−Cu−Ti：71.5−27.5−1）をスクリ−
ンで30μｍの厚さに印刷し、上記の銅板をアルミナ基板
の表及び裏面にそれぞれ載置し、１kg／cm2の加圧の
後、10-5Torrの真空条件下、 850℃×10分間加熱した。
その後冷却して、接合体を得た。Example A (Preparation of bonded body) Comparative Example 1 Oxygen-free copper plate (plate thickness specified by JIS H3100, metal number C1020)
0.3m / m and 0.3m / m, size 45x30m / m) were prepared respectively. Alumina substrate (plate thickness 0.635)
m / m, size 45 x 30 m / m) is prepared, and an active metal powder mixed paste (Ag-Cu-Ti: 71.5-27.5-1) is screened on both sides.
Printed with a thickness of 30 μm on the front and back sides of the alumina substrate, pressurized to 1 kg / cm 2 and 850 ° C for 10 minutes under a vacuum of 10 -5 Torr. Heated.
Then, it cooled and the joined body was obtained.
【００２４】次いで、接合体の表面の銅板の表面を研磨
し、パタ−ニング用レジストを表面銅板の接着面積と裏
面のそれの比が0.7 となるようにスクリ−ン印刷を行
い、熱硬化後、塩化第二銅水溶液に浸漬エッチングし、
苛性ソ−ダ水溶液によりレジストを剥離し、パタ−ンを
形成した接合体を得、さらにこの複合体の銅板部を過硫
酸アンモニウム水溶液に浸蝕させ、後に水洗して、パタ
−ン処理した接合体を得た（以後この接合体を「接合体
No.1」という）。Next, the surface of the copper plate on the surface of the joined body is polished, and a patterning resist is screen-printed so that the ratio of the adhesion area of the front surface copper plate to that of the back surface is 0.7, and after heat curing. , Dip etching in cupric chloride solution,
The resist was peeled off with an aqueous solution of caustic soda to obtain a bonded body having a pattern formed thereon. Further, the copper plate portion of the composite body was corroded with an aqueous solution of ammonium persulfate, followed by washing with water to form a pattern-treated bonded body. Obtained (hereinafter,
No.1 ").
【００２５】比較例２ 比較例１において、セラミックス基板を窒化アルミ（Al
N）基板 とした以外、比較例１と同様にして接合体を得
た（以後この接合体を「接合体No.2」という）。Comparative Example 2 In Comparative Example 1, the ceramic substrate was made of aluminum nitride (Al
N) A bonded body was obtained in the same manner as in Comparative Example 1 except that the substrate was used (hereinafter, this bonded body is referred to as "bonded body No. 2").
【００２６】比較例３ セラミックス基板として、アルミナ基板（板厚0.635m／
m、寸法45×30m／m）の表及び裏面にそれぞれ比較例１
で用意した無酸素銅板を載置し、これをあらかじめ窒素
ガス雰囲気に調整されたトンネル式電熱焼成炉に入れ、
加熱スピ−ド50℃／分で昇温加熱し、最高温度1073℃で
３分間保持した。Comparative Example 3 As an ceramic substrate, an alumina substrate (plate thickness 0.635 m /
m, size 45 × 30 m / m) Comparative Example 1 on the front and back sides respectively
Place the oxygen-free copper plate prepared in, put it in a tunnel type electrothermal firing furnace adjusted to a nitrogen gas atmosphere in advance,
The temperature was raised by heating at a heating speed of 50 ° C./min and maintained at a maximum temperature of 1073 ° C. for 3 minutes.
【００２７】その後冷却して接合体を得た。次いで比較
例１と同様にしてパタ−ン処理した接合体を得た（以後
この接合体を「接合体No.3」という）。Then, it was cooled to obtain a joined body. Next, a pattern-processed bonded body was obtained in the same manner as in Comparative Example 1 (hereinafter, this bonded body is referred to as "bonded body No. 3").
【００２８】比較例４ 比較例１と同様にして得られた接合体の表側回路パタ−
ン上にエッチング処理後個々の回路線が図４に示される
形状（縁取の代わりに溝体：寸法はｄ＝0.5m／m、ｅ＝
0.3m／m、ｆ＝0.15m／m、ｇ＝0.15m／m）になるように
設計されたパタ−ニング用レジストを印刷し、再度エッ
チング工程以降を行い、接合体を得た（以後この接合体
を「接合体No.4」という）。Comparative Example 4 A front side circuit pattern of a joined body obtained in the same manner as in Comparative Example 1.
After the etching process, the individual circuit lines have the shape shown in FIG. 4 (groove instead of edging: dimensions d = 0.5 m / m, e =
A patterning resist designed to have 0.3 m / m, f = 0.15 m / m, g = 0.15 m / m) was printed, and the etching process and subsequent steps were performed again to obtain a bonded body (hereinafter The joined body is called "joined body No.4").
【００２９】実施例１ 比較例１で得られた接合体の表側回路パタ−ン上にエッ
チング処理後個々の回路線の形状が縁取巾（ａ）が0.25
m／m、段差の高さ(ｂ)が0.15m／mとなるように設計され
たパタ−ニング用レジストを印刷し、再度エッチング工
程以降を行い接合体を得た（以後この接合体を「接合体
No.5」という）。Example 1 After the etching treatment on the front side circuit pattern of the joined body obtained in Comparative Example 1, the shape of each circuit line was 0.25 mm (a).
A patterning resist designed to have m / m and a step height (b) of 0.15 m / m was printed, and the etching process and subsequent steps were performed again to obtain a bonded body (hereinafter, this bonded body Zygote
No.5 ").
【００３０】実施例２ 実施例１において、縁取巾（ａ）が0.65m／mとなるよう
にパタ−ンを変更した以外、実施例１と同様にして接合
体を得た（以後この接合体を「接合体No.6」という）。Example 2 A bonded body was obtained in the same manner as in Example 1 except that the pattern was changed so that the edging width (a) was 0.65 m / m. Is called "Joint body No.6").
【００３１】実施例３ 比較例１において、図３のように縁取が直線的で、その
縁取巾（ａ）が 0.65m／m となるようにエッチング条件
を変更した以外、比較例１と同様にして接合体を得た
（以後この接合体を「接合体No.7」という）。Example 3 In the same manner as in Comparative Example 1, except that the edging was linear and the etching width was changed to 0.65 m / m in Comparative Example 1 as shown in FIG. To obtain a joined body (hereinafter, this joined body is referred to as "joined body No. 7").
【００３２】実施例４ 実施例２において、セラミックス基板を窒化アルミ（Al
N）基板とした以外、実施例２と同様にして接合体を得た
（以後この接合体を「接合体No.8」という）。Example 4 In Example 2, the ceramic substrate was made of aluminum nitride (Al
N) A bonded body was obtained in the same manner as in Example 2 except that the substrate was used (hereinafter, this bonded body is referred to as "bonded body No. 8").
【００３３】実施例５ 比較例３と同様にして得られた接合体の表側回路パタ−
ン上にエッチング処理後個々の回路線の形状において、
縁取巾(ａ)が0.65m／m、段差の高さ(ｂ)が0.15m／mとな
るように段付されたパタ−ニング用レジストを印刷し、
再度エッチング工程以降を行い、接合体を得た（以後こ
の接合体を「接合体No.9」という）。Example 5 A front side circuit pattern of a joined body obtained in the same manner as in Comparative Example 3.
In the shape of individual circuit lines after etching on the
Print a patterning resist stepped so that the border width (a) is 0.65 m / m and the height of the step (b) is 0.15 m / m,
The etching process and the subsequent steps were performed again to obtain a bonded body (hereinafter, this bonded body is referred to as "bonded body No. 9").
【００３４】実施例６ 比較例３において、図３のように縁取を直線的にし、そ
の縁取巾（ａ）が0.65m／mとなるようにエッチング条件
を変更した以外、比較例３と同様にして接合体を得た
（以後この接合体を「接合体No.10」という）。Example 6 Comparative Example 3 was carried out in the same manner as Comparative Example 3 except that the edging was linear as shown in FIG. 3 and the etching conditions were changed so that the edging width (a) was 0.65 m / m. To obtain a joined body (hereinafter, this joined body is referred to as "joined body No. 10").
【００３５】実施例Ｂ（接合体の評価） 実施例Ａで得られた接合体No.１〜10について、それぞ
れ 100枚ずつ抽出して、その 100枚を50枚ずつに分け
て、それぞれ以下のような評価試験を行い、その結果を
表１に示した。Example B (Evaluation of the Bonded Body) With respect to the bonded bodies No. 1 to 10 obtained in Example A, 100 sheets each were extracted, and the 100 sheets were divided into 50 sheets, respectively, and Such an evaluation test was conducted, and the results are shown in Table 1.
【００３６】評価試験−１ あらかじめ窒素ガス雰囲気に調整されたトンネル式電熱
焼成炉に、接合体を入れ、加熱スピ−ド40℃／分で昇温
加熱し、最高温度 400℃で10分間保持した後、30℃／分
で冷却するという工程を1サイクルとし、10サイクルく
り返し行った後、接合体を顕微鏡（20倍）で観察する。Evaluation test-1 The bonded body was placed in a tunnel type electric heating furnace previously adjusted to a nitrogen gas atmosphere, heated and heated at a heating speed of 40 ° C./min, and held at a maximum temperature of 400 ° C. for 10 minutes. After that, the process of cooling at 30 ° C./min is set as one cycle, and after repeating 10 cycles, the bonded body is observed with a microscope (20 times).
【００３７】評価試験−２ −40℃×30分→25℃×10分→125℃×30分を1サイクルと
したヒ−トサイクル試験を50サイクル行った後、接合体
を顕微鏡（20倍）で観察する。Evaluation test-2 −40 ° C. × 30 minutes → 25 ° C. × 10 minutes → 125 ° C. × 30 minutes As one cycle, a heat cycle test was performed for 50 cycles, and then the bonded body was examined with a microscope (20 times). Observe at.
【００３８】[0038]
【発明の効果】本発明によれば、製造時及び使用時に繰
返し発生する熱により、セラミックス基板にしばしば生
じていた、クラックがほとんど生じることがない、金属
板とセラミックス基板とからなる接合体を得ることがで
きる。According to the present invention, a bonded body composed of a metal plate and a ceramic substrate is obtained, in which cracks that are often generated in the ceramic substrate due to heat repeatedly generated during manufacturing and use are hardly generated. be able to.
【図１】本発明接合体の１例を示した概略平面図であ
る。FIG. 1 is a schematic plan view showing an example of a joined body of the present invention.
【図２】本発明による段差形状の縁取を有した接合体の
1例を示した概略断面図である。FIG. 2 shows a joint body having a stepped edge according to the present invention.
FIG. 3 is a schematic sectional view showing an example.
【図３】本発明による直線形状の縁取を有した接合体の
1例を示した概略断面図である。FIG. 3 shows a joined body having a straight edge according to the present invention.
FIG. 3 is a schematic sectional view showing an example.
【図４】本発明によらない従来使用されている溝形状を
有した接合体である。FIG. 4 is a conventionally used bonded body having a groove shape, which is not according to the present invention.
１ セラミックス基板 ２ 回路線 ３ 縁取部 １０ 表面金属板 １１ 裏面金属板 DESCRIPTION OF SYMBOLS 1 Ceramics substrate 2 Circuit line 3 Edge part 10 Front metal plate 11 Back metal plate
【表１】 [Table 1]
Claims (5)
回路パタ−ンを有する金属板とセラミックス基板とから
なる接合体において、前記回路パタ−ンを構成する個々
の回路線が縁取加工処理されていることを特徴とする金
属板とセラミックス基板とからなる接合体。1. At least one side of a ceramic substrate,
In a joined body composed of a metal plate having a circuit pattern and a ceramic substrate, each circuit line constituting the circuit pattern is subjected to an edging process. Zygote.
ミである請求項１記載の金属板とセラミックス基板とか
らなる接合体。2. A bonded body comprising a metal plate and a ceramics substrate according to claim 1, wherein the ceramics is alumina and aluminum nitride.
とセラミックス基板とからなる接合体。3. A joined body comprising a metal plate and a ceramic substrate according to claim 1, wherein the metal is copper.
／mである請求項１記載の金属板とセラミックス基板と
からなる接合体。4. The edging width (a) of the edging portion is 0.05 to 1.5 m.
/ M The bonded body comprising the metal plate and the ceramic substrate according to claim 1.
厚（ｂ＋ｃ）の10〜95％である請求項１及び４項いづれ
か記載の金属板とセラミックス基板とからなる接合体。5. A joint comprising a metal plate and a ceramic substrate according to claim 1, wherein the height (b) of the step of the edging portion is 10 to 95% of the plate thickness (b + c) of the metal plate. body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3231091A JPH0551271A (en) | 1991-08-20 | 1991-08-20 | Joined body constituted of metallic sheet and ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3231091A JPH0551271A (en) | 1991-08-20 | 1991-08-20 | Joined body constituted of metallic sheet and ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0551271A true JPH0551271A (en) | 1993-03-02 |
Family
ID=16918150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3231091A Pending JPH0551271A (en) | 1991-08-20 | 1991-08-20 | Joined body constituted of metallic sheet and ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0551271A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6432468B1 (en) | 1995-05-30 | 2002-08-13 | Suntory Limited | Domestic fowl eggs having a high content of highly unsaturated fatty acid, their production process and their use |
| WO2015104954A1 (en) * | 2014-01-10 | 2015-07-16 | 古河電気工業株式会社 | Electronic circuit device |
| JP2015141934A (en) * | 2014-01-27 | 2015-08-03 | 京セラ株式会社 | Cooling plate and semiconductor module |
| WO2021192755A1 (en) * | 2020-03-23 | 2021-09-30 | 住友ベークライト株式会社 | Circuit board |
-
1991
- 1991-08-20 JP JP3231091A patent/JPH0551271A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6432468B1 (en) | 1995-05-30 | 2002-08-13 | Suntory Limited | Domestic fowl eggs having a high content of highly unsaturated fatty acid, their production process and their use |
| WO2015104954A1 (en) * | 2014-01-10 | 2015-07-16 | 古河電気工業株式会社 | Electronic circuit device |
| JP5889488B2 (en) * | 2014-01-10 | 2016-03-22 | 古河電気工業株式会社 | Electronic circuit equipment |
| JPWO2015104954A1 (en) * | 2014-01-10 | 2017-03-23 | 古河電気工業株式会社 | Electronic circuit equipment |
| JP2015141934A (en) * | 2014-01-27 | 2015-08-03 | 京セラ株式会社 | Cooling plate and semiconductor module |
| WO2021192755A1 (en) * | 2020-03-23 | 2021-09-30 | 住友ベークライト株式会社 | Circuit board |
| JPWO2021192755A1 (en) * | 2020-03-23 | 2021-09-30 | ||
| US12114417B2 (en) | 2020-03-23 | 2024-10-08 | Sumitomo Bakelite Co., Ltd. | Circuit board |
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