JPH0550727B2 - - Google Patents
Info
- Publication number
- JPH0550727B2 JPH0550727B2 JP13738085A JP13738085A JPH0550727B2 JP H0550727 B2 JPH0550727 B2 JP H0550727B2 JP 13738085 A JP13738085 A JP 13738085A JP 13738085 A JP13738085 A JP 13738085A JP H0550727 B2 JPH0550727 B2 JP H0550727B2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- electrode
- column
- row
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 27
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60137380A JPS61294414A (ja) | 1985-06-24 | 1985-06-24 | マトリツクス端子型液晶表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60137380A JPS61294414A (ja) | 1985-06-24 | 1985-06-24 | マトリツクス端子型液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61294414A JPS61294414A (ja) | 1986-12-25 |
| JPH0550727B2 true JPH0550727B2 (fr) | 1993-07-29 |
Family
ID=15197330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60137380A Granted JPS61294414A (ja) | 1985-06-24 | 1985-06-24 | マトリツクス端子型液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61294414A (fr) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
-
1985
- 1985-06-24 JP JP60137380A patent/JPS61294414A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61294414A (ja) | 1986-12-25 |
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