JPH0550727B2 - - Google Patents
Info
- Publication number
- JPH0550727B2 JPH0550727B2 JP13738085A JP13738085A JPH0550727B2 JP H0550727 B2 JPH0550727 B2 JP H0550727B2 JP 13738085 A JP13738085 A JP 13738085A JP 13738085 A JP13738085 A JP 13738085A JP H0550727 B2 JPH0550727 B2 JP H0550727B2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- electrode
- column
- row
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 27
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60137380A JPS61294414A (ja) | 1985-06-24 | 1985-06-24 | マトリツクス端子型液晶表示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60137380A JPS61294414A (ja) | 1985-06-24 | 1985-06-24 | マトリツクス端子型液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61294414A JPS61294414A (ja) | 1986-12-25 |
JPH0550727B2 true JPH0550727B2 (fr) | 1993-07-29 |
Family
ID=15197330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60137380A Granted JPS61294414A (ja) | 1985-06-24 | 1985-06-24 | マトリツクス端子型液晶表示装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61294414A (fr) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
-
1985
- 1985-06-24 JP JP60137380A patent/JPS61294414A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
Also Published As
Publication number | Publication date |
---|---|
JPS61294414A (ja) | 1986-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7354807B2 (en) | Method of fabricating liquid crystal display panel | |
JP2952744B2 (ja) | 薄膜トランジスター集積装置 | |
JP3567183B2 (ja) | 液晶表示装置 | |
US8378354B2 (en) | Liquid crystal display panel for common voltage compensation and manufacturing method of the same | |
US5231039A (en) | Method of fabricating a liquid crystal display device | |
US5087113A (en) | Liquid crystal display device | |
US20070182872A1 (en) | Multi-domain liquid crystal display and a thin film transistor substrate of the same | |
KR20080009897A (ko) | 액정 표시 장치 | |
US8339534B2 (en) | Display device | |
JPH0534673B2 (fr) | ||
US20070146563A1 (en) | Liquid crystal display and method of manufacturing thereof | |
JP2518388B2 (ja) | アクティブマトリクス液晶表示素子 | |
KR960014824B1 (ko) | 박막 트랜지스터와 액정셀을 갖는 대향형 액티브 매트릭스 액정표시장치 | |
WO2005036653A1 (fr) | Transistor en couches minces, panneau a reseau de transistors en couches minces et dispositif d'affichage | |
US4828370A (en) | Switching element with nonlinear resistive, nonstoichiometric material | |
EP0182484B1 (fr) | Dispositif d'affichage à cristal liquide | |
JP3724163B2 (ja) | 液晶表示素子及び液晶表示装置 | |
JPH06230414A (ja) | 液晶表示素子 | |
JPH0550727B2 (fr) | ||
JP3052361B2 (ja) | アクティブマトリクス液晶表示装置とその製造方法 | |
JP2868758B1 (ja) | 液晶表示装置 | |
JP2578942B2 (ja) | アクティブマトリクス液晶表示装置の駆動方法 | |
JP2578941B2 (ja) | アクティブマトリクス液晶表示装置の駆動方法 | |
JPH05341318A (ja) | アクティブマトリクス型液晶表示素子 | |
JP2540957B2 (ja) | 薄膜二端子素子型アクティブマトリクス液晶表示装置及びその製造方法 |