JPH0545095B2 - - Google Patents
Info
- Publication number
- JPH0545095B2 JPH0545095B2 JP62124027A JP12402787A JPH0545095B2 JP H0545095 B2 JPH0545095 B2 JP H0545095B2 JP 62124027 A JP62124027 A JP 62124027A JP 12402787 A JP12402787 A JP 12402787A JP H0545095 B2 JPH0545095 B2 JP H0545095B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- turn
- gate
- gto
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000001939 inductive effect Effects 0.000 claims description 5
- 238000004804 winding Methods 0.000 description 24
- 101100449816 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GTO1 gene Proteins 0.000 description 14
- 238000001514 detection method Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101100449818 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) ECM4 gene Proteins 0.000 description 1
- 101100449817 Schizosaccharomyces pombe (strain 972 / ATCC 24843) gto2 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62124027A JPS63290016A (ja) | 1987-05-22 | 1987-05-22 | ゲ−トタ−ンオフサイリスタの駆動回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62124027A JPS63290016A (ja) | 1987-05-22 | 1987-05-22 | ゲ−トタ−ンオフサイリスタの駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63290016A JPS63290016A (ja) | 1988-11-28 |
JPH0545095B2 true JPH0545095B2 (enrdf_load_stackoverflow) | 1993-07-08 |
Family
ID=14875221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62124027A Granted JPS63290016A (ja) | 1987-05-22 | 1987-05-22 | ゲ−トタ−ンオフサイリスタの駆動回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63290016A (enrdf_load_stackoverflow) |
-
1987
- 1987-05-22 JP JP62124027A patent/JPS63290016A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63290016A (ja) | 1988-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5469095A (en) | Bridge circuit for driving an inductive load with a shoot-through prevention circuit | |
EP0027888A1 (en) | Semiconductor switch | |
JP3006845B2 (ja) | 電圧降下の小さい極性反転保護手段を有するブリッジ回路 | |
US4013904A (en) | Darlington transistor switching circuit for reactive load | |
JP2005109394A (ja) | 半導体装置及び半導体装置の駆動回路 | |
JPH01286465A (ja) | 双方向制御整流半導体装置 | |
JPH0545095B2 (enrdf_load_stackoverflow) | ||
JPS63272221A (ja) | 誘導負荷を駆動するパワースイッチングトランジスタを通る一時的な電流再循環回路 | |
JPH04280670A (ja) | スイッチ回路およびゲート電圧クランプ型半導体装置 | |
US5559661A (en) | Short-circuit-proof transistor output stage, especially ignition output stage for motor vehicles | |
JPH0545094B2 (enrdf_load_stackoverflow) | ||
US4398205A (en) | Gate turn-off device with high turn-off gain | |
JPS63242022A (ja) | 半導体スイツチング回路 | |
JP5334359B2 (ja) | Dc−dcコンバータのラッチアップ防止回路 | |
US4213067A (en) | Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path | |
JPS585609B2 (ja) | 半導体スイッチ回路 | |
JPS58110072A (ja) | 半導体装置 | |
JP3194798B2 (ja) | クランプ機能付きスイッチ回路 | |
JPH0510422Y2 (enrdf_load_stackoverflow) | ||
JP3019039B2 (ja) | 内燃機関点火装置 | |
JP2853278B2 (ja) | 駆動回路 | |
JPH066629Y2 (ja) | スイツチング回路 | |
JP3396233B2 (ja) | 出力回路 | |
JPS61263103A (ja) | 電磁ソレノイド制御装置 | |
JPH0730396A (ja) | バイポーラモード静電誘導形トランジスタ(bsit)の駆動回路 |