JPH0544820B2 - - Google Patents

Info

Publication number
JPH0544820B2
JPH0544820B2 JP59238109A JP23810984A JPH0544820B2 JP H0544820 B2 JPH0544820 B2 JP H0544820B2 JP 59238109 A JP59238109 A JP 59238109A JP 23810984 A JP23810984 A JP 23810984A JP H0544820 B2 JPH0544820 B2 JP H0544820B2
Authority
JP
Japan
Prior art keywords
thin film
electrode
frequency power
high frequency
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59238109A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61116826A (ja
Inventor
Kunio Nishimura
Takehisa Nakayama
Kazunaga Tsushimo
Yoshihisa Oowada
Hisanori Hirata
Masanobu Izumina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP59238109A priority Critical patent/JPS61116826A/ja
Publication of JPS61116826A publication Critical patent/JPS61116826A/ja
Publication of JPH0544820B2 publication Critical patent/JPH0544820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
JP59238109A 1984-11-12 1984-11-12 薄膜形成方法 Granted JPS61116826A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59238109A JPS61116826A (ja) 1984-11-12 1984-11-12 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238109A JPS61116826A (ja) 1984-11-12 1984-11-12 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS61116826A JPS61116826A (ja) 1986-06-04
JPH0544820B2 true JPH0544820B2 (de) 1993-07-07

Family

ID=17025307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59238109A Granted JPS61116826A (ja) 1984-11-12 1984-11-12 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS61116826A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4836038B2 (ja) * 2008-03-26 2011-12-14 正剛 大嶋 道路用流出抑制排水工
JP5069791B2 (ja) * 2008-05-22 2012-11-07 株式会社カネカ 薄膜光電変換装置とその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737821A (en) * 1980-08-20 1982-03-02 Kokusai Electric Co Ltd Vapor phase reaction device
JPS5842226A (ja) * 1981-09-07 1983-03-11 Nec Corp プラズマ半導体製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737821A (en) * 1980-08-20 1982-03-02 Kokusai Electric Co Ltd Vapor phase reaction device
JPS5842226A (ja) * 1981-09-07 1983-03-11 Nec Corp プラズマ半導体製造装置

Also Published As

Publication number Publication date
JPS61116826A (ja) 1986-06-04

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Legal Events

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