JPH0544172B2 - - Google Patents

Info

Publication number
JPH0544172B2
JPH0544172B2 JP57231638A JP23163882A JPH0544172B2 JP H0544172 B2 JPH0544172 B2 JP H0544172B2 JP 57231638 A JP57231638 A JP 57231638A JP 23163882 A JP23163882 A JP 23163882A JP H0544172 B2 JPH0544172 B2 JP H0544172B2
Authority
JP
Japan
Prior art keywords
exposure
pattern
mark
deviation
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57231638A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59124129A (ja
Inventor
Nobuyuki Yasutake
Koichi Kobayashi
Shuzo Ooshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57231638A priority Critical patent/JPS59124129A/ja
Publication of JPS59124129A publication Critical patent/JPS59124129A/ja
Publication of JPH0544172B2 publication Critical patent/JPH0544172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP57231638A 1982-12-29 1982-12-29 電子ビ−ム露光方法 Granted JPS59124129A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57231638A JPS59124129A (ja) 1982-12-29 1982-12-29 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57231638A JPS59124129A (ja) 1982-12-29 1982-12-29 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS59124129A JPS59124129A (ja) 1984-07-18
JPH0544172B2 true JPH0544172B2 (enrdf_load_stackoverflow) 1993-07-05

Family

ID=16926635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231638A Granted JPS59124129A (ja) 1982-12-29 1982-12-29 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS59124129A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220264A (ja) * 2013-04-30 2014-11-20 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、および物品の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105647A (ja) * 1982-12-09 1984-06-19 Mitsubishi Electric Corp 電子ビーム露光方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220264A (ja) * 2013-04-30 2014-11-20 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、および物品の製造方法
US9257262B2 (en) 2013-04-30 2016-02-09 Canon Kabushiki Kaisha Lithography apparatus, lithography method, and method of manufacturing article

Also Published As

Publication number Publication date
JPS59124129A (ja) 1984-07-18

Similar Documents

Publication Publication Date Title
JP2988393B2 (ja) 露光方法
KR0170909B1 (ko) 반도체 소자의 오버레이 검사방법
JP3402750B2 (ja) 位置合わせ方法及びそれを用いた素子の製造方法
US7288848B2 (en) Overlay mark for measuring and correcting alignment errors
US6239858B1 (en) Exposure method, exposure apparatus and semiconductor device manufactured by using the exposure apparatus
US6342703B1 (en) Exposure apparatus, exposure method, and device manufacturing method employing the exposure method
JP2859855B2 (ja) 半導体素子の微細パターンアライメント方法
KR0171453B1 (ko) 노광장치 및 노광방법
US6357131B1 (en) Overlay reliability monitor
KR100439472B1 (ko) 공정 에러 측정 방법 및 장치와 이를 이용한 오버레이측정 방법 및 장치
US6309944B1 (en) Overlay matching method which eliminates alignment induced errors and optimizes lens matching
JP2000277425A (ja) 電子線描画方法とその装置
JP2003017386A (ja) 位置合わせ方法、露光方法、露光装置及びデバイスの製造方法
JPH0544172B2 (enrdf_load_stackoverflow)
JP3245859B2 (ja) 半導体装置の製造装置
KR100598263B1 (ko) 노광 장치 및 이를 이용한 샷 정렬 방법
JPH10308434A (ja) 位置決め装置、ミラー曲り検出方法、位置決め方法およびデバイス製造方法
KR100255087B1 (ko) 더미셀이 형성된 스테퍼용 레티클
KR100375290B1 (ko) 웨이퍼 패턴 오차의 요인 해석 방법 및 사진 제판용마스크의 제조 장치
JPH06181169A (ja) 露光装置、及び、半導体装置の製造方法
JPH01258421A (ja) ウエハアライメント方法
JPH04255210A (ja) 位置合わせ方法
JPS636862B2 (enrdf_load_stackoverflow)
JPH04136855A (ja) 露光用マスクの製造方法
JP2000150361A (ja) 位置計測方法および位置計測装置