JPH0543303B2 - - Google Patents
Info
- Publication number
- JPH0543303B2 JPH0543303B2 JP62174138A JP17413887A JPH0543303B2 JP H0543303 B2 JPH0543303 B2 JP H0543303B2 JP 62174138 A JP62174138 A JP 62174138A JP 17413887 A JP17413887 A JP 17413887A JP H0543303 B2 JPH0543303 B2 JP H0543303B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- high concentration
- concentration layer
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 4
- 108091006146 Channels Proteins 0.000 description 26
- 230000007423 decrease Effects 0.000 description 7
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 6
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 6
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62174138A JPS6417480A (en) | 1987-07-13 | 1987-07-13 | Junction type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62174138A JPS6417480A (en) | 1987-07-13 | 1987-07-13 | Junction type field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6417480A JPS6417480A (en) | 1989-01-20 |
| JPH0543303B2 true JPH0543303B2 (de) | 1993-07-01 |
Family
ID=15973328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62174138A Granted JPS6417480A (en) | 1987-07-13 | 1987-07-13 | Junction type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6417480A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229051A (en) * | 1983-11-04 | 1993-07-20 | Perma-Post International, Inc. | Method for making sleeve encased concrete posts |
| US5675956A (en) * | 1994-04-25 | 1997-10-14 | Nevin; Jerome F. | Post and pole construction using composite materials |
| JP5168773B2 (ja) * | 2005-11-14 | 2013-03-27 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| US8390039B2 (en) * | 2009-11-02 | 2013-03-05 | Analog Devices, Inc. | Junction field effect transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5115710A (en) * | 1974-07-31 | 1976-02-07 | Toyota Motor Co Ltd | Kyukibenojushinai fukunenshoshitsukaranaru nainenkikan |
| JPS522271A (en) * | 1975-06-24 | 1977-01-08 | Tokyo Tsushin Kozai Kk | Electromagnetic counter |
| JPS5218104A (en) * | 1975-07-31 | 1977-02-10 | Sutotsupani Sa Ets Puurura Mek | Device for connecting telephone line to computer |
| JPS5222513A (en) * | 1975-08-15 | 1977-02-19 | Fuji Electric Co Ltd | Heating furnace apparatus |
-
1987
- 1987-07-13 JP JP62174138A patent/JPS6417480A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5115710A (en) * | 1974-07-31 | 1976-02-07 | Toyota Motor Co Ltd | Kyukibenojushinai fukunenshoshitsukaranaru nainenkikan |
| JPS522271A (en) * | 1975-06-24 | 1977-01-08 | Tokyo Tsushin Kozai Kk | Electromagnetic counter |
| JPS5218104A (en) * | 1975-07-31 | 1977-02-10 | Sutotsupani Sa Ets Puurura Mek | Device for connecting telephone line to computer |
| JPS5222513A (en) * | 1975-08-15 | 1977-02-19 | Fuji Electric Co Ltd | Heating furnace apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6417480A (en) | 1989-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3063374B2 (ja) | 低いソース・インダクタンスを有する半導体デバイス | |
| US4581623A (en) | Interlayer contact for use in a static RAM cell | |
| US4484211A (en) | Oxide walled emitter | |
| JPH08250728A (ja) | 電界効果型半導体装置及びその製造方法 | |
| US3946424A (en) | High frequency field-effect transistors and method of making same | |
| JPS59117269A (ja) | 半導体デバイスおよびその製造方法 | |
| KR910002308B1 (ko) | 접합형 전계효과트랜지스터 및 그 제조방법 | |
| JP2713205B2 (ja) | 半導体装置 | |
| JPS6156874B2 (de) | ||
| US4816880A (en) | Junction field effect transistor | |
| US4107725A (en) | Compound field effect transistor | |
| JP3128364B2 (ja) | 半導体装置及びその製造方法 | |
| JPH0543303B2 (de) | ||
| JPH10209174A (ja) | 接合型電界効果トランジスタ | |
| JP3170610B2 (ja) | 縦型電界効果トランジスタの製造方法 | |
| US4197143A (en) | Method of making a junction field-effect transistor utilizing a conductive buried region | |
| JPH04225238A (ja) | ラテラルトランジスタ及びそれを用いたカレントミラー回路 | |
| JP3017838B2 (ja) | 半導体装置およびその製造方法 | |
| JPH05129425A (ja) | 半導体装置およびその製造方法 | |
| JPH0521789A (ja) | 電界効果型トランジスタ及びその製造方法 | |
| KR0161893B1 (ko) | 반도체 소자의 구조 및 제조방법 | |
| JPH01286367A (ja) | 縦型電界効果トランジスタ | |
| JPS62133763A (ja) | Ｍｏｓトランジスタ | |
| JP2661792B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPH0612818B2 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |