JPH0543108Y2 - - Google Patents
Info
- Publication number
- JPH0543108Y2 JPH0543108Y2 JP1987088226U JP8822687U JPH0543108Y2 JP H0543108 Y2 JPH0543108 Y2 JP H0543108Y2 JP 1987088226 U JP1987088226 U JP 1987088226U JP 8822687 U JP8822687 U JP 8822687U JP H0543108 Y2 JPH0543108 Y2 JP H0543108Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz crucible
- crucible
- tape measure
- single crystal
- pulley
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010453 quartz Substances 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 49
- 239000013078 crystal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987088226U JPH0543108Y2 (fr) | 1987-06-08 | 1987-06-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987088226U JPH0543108Y2 (fr) | 1987-06-08 | 1987-06-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63199169U JPS63199169U (fr) | 1988-12-21 |
| JPH0543108Y2 true JPH0543108Y2 (fr) | 1993-10-29 |
Family
ID=30946149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987088226U Expired - Lifetime JPH0543108Y2 (fr) | 1987-06-08 | 1987-06-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0543108Y2 (fr) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6287481A (ja) * | 1985-10-09 | 1987-04-21 | Mitsubishi Metal Corp | 単結晶引上装置における溶湯初期位置設定方法 |
-
1987
- 1987-06-08 JP JP1987088226U patent/JPH0543108Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6287481A (ja) * | 1985-10-09 | 1987-04-21 | Mitsubishi Metal Corp | 単結晶引上装置における溶湯初期位置設定方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63199169U (fr) | 1988-12-21 |
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