JPH0543108Y2 - - Google Patents
Info
- Publication number
- JPH0543108Y2 JPH0543108Y2 JP1987088226U JP8822687U JPH0543108Y2 JP H0543108 Y2 JPH0543108 Y2 JP H0543108Y2 JP 1987088226 U JP1987088226 U JP 1987088226U JP 8822687 U JP8822687 U JP 8822687U JP H0543108 Y2 JPH0543108 Y2 JP H0543108Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz crucible
- crucible
- tape measure
- single crystal
- pulley
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987088226U JPH0543108Y2 (enrdf_load_stackoverflow) | 1987-06-08 | 1987-06-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987088226U JPH0543108Y2 (enrdf_load_stackoverflow) | 1987-06-08 | 1987-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63199169U JPS63199169U (enrdf_load_stackoverflow) | 1988-12-21 |
JPH0543108Y2 true JPH0543108Y2 (enrdf_load_stackoverflow) | 1993-10-29 |
Family
ID=30946149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987088226U Expired - Lifetime JPH0543108Y2 (enrdf_load_stackoverflow) | 1987-06-08 | 1987-06-08 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0543108Y2 (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6287481A (ja) * | 1985-10-09 | 1987-04-21 | Mitsubishi Metal Corp | 単結晶引上装置における溶湯初期位置設定方法 |
-
1987
- 1987-06-08 JP JP1987088226U patent/JPH0543108Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63199169U (enrdf_load_stackoverflow) | 1988-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6424089A (en) | Device for adjusting initial position of melt surface | |
JP2678383B2 (ja) | 単結晶上装置 | |
EP0498653B1 (en) | A method for measuring the diameter of single crystal ingot | |
JPH10185545A (ja) | 石英ルツボの形状測定装置 | |
JPH0543108Y2 (enrdf_load_stackoverflow) | ||
US11891721B2 (en) | Spool-balanced seed lift | |
US6030451A (en) | Two camera diameter control system with diameter tracking for silicon ingot growth | |
US5725660A (en) | Semiconductor single crystal growing apparatus | |
KR100216360B1 (ko) | 성장결정체의 중량측정장치 | |
JPH0331673B2 (enrdf_load_stackoverflow) | ||
US5888299A (en) | Apparatus for adjusting initial position of melt surface | |
CN110952134B (zh) | 一种水平对中校准夹具、拉晶炉及水平对中校准方法 | |
JP2796687B2 (ja) | 単結晶製造方法およびその装置 | |
JPH09315887A (ja) | 単結晶の製造方法及びそれに用いられる単結晶製造装置 | |
JP2939920B2 (ja) | 半導体単結晶製造装置 | |
JPH07277879A (ja) | Cz法による単結晶製造装置および融液レベル制御方法 | |
CN112857297A (zh) | 单晶棒直径测量装置、单晶棒生长系统及方法 | |
JPH10185546A (ja) | 石英ルツボの形状測定装置 | |
JP3642176B2 (ja) | シリコン単結晶の引上げ装置 | |
JPH07172980A (ja) | 半導体単結晶製造装置 | |
JPS63307189A (ja) | 単結晶引上装置 | |
JPH0538060Y2 (enrdf_load_stackoverflow) | ||
CN203187773U (zh) | 区熔炉ccd实时监控装置 | |
SU1533371A1 (ru) | Способ контрол процесса кристаллизации из расплава | |
JP2005015260A (ja) | 単結晶引上装置のプルヘッドの回転バランス調整方法及びこれを用いた単結晶引上方法 |