JPH0543094Y2 - - Google Patents
Info
- Publication number
- JPH0543094Y2 JPH0543094Y2 JP4883987U JP4883987U JPH0543094Y2 JP H0543094 Y2 JPH0543094 Y2 JP H0543094Y2 JP 4883987 U JP4883987 U JP 4883987U JP 4883987 U JP4883987 U JP 4883987U JP H0543094 Y2 JPH0543094 Y2 JP H0543094Y2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas blowing
- substrate
- plasma discharge
- discharge field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007664 blowing Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 27
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 9
- 230000035699 permeability Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4883987U JPH0543094Y2 (enrdf_load_stackoverflow) | 1987-03-31 | 1987-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4883987U JPH0543094Y2 (enrdf_load_stackoverflow) | 1987-03-31 | 1987-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63175158U JPS63175158U (enrdf_load_stackoverflow) | 1988-11-14 |
| JPH0543094Y2 true JPH0543094Y2 (enrdf_load_stackoverflow) | 1993-10-29 |
Family
ID=30870746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4883987U Expired - Lifetime JPH0543094Y2 (enrdf_load_stackoverflow) | 1987-03-31 | 1987-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0543094Y2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4107596B2 (ja) * | 1996-10-02 | 2008-06-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5660862B2 (ja) * | 2010-11-22 | 2015-01-28 | 小島プレス工業株式会社 | 樹脂基材の表面被膜形成装置 |
-
1987
- 1987-03-31 JP JP4883987U patent/JPH0543094Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63175158U (enrdf_load_stackoverflow) | 1988-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103797155B (zh) | 用于直线型大面积等离子体反应器中均匀处理的气体输送和分配 | |
| CN101443474B (zh) | 改善大面积基板均匀性的方法和设备 | |
| JP2010529682A (ja) | 均一なシリコン膜を堆積させる装置及びそれを製造する方法 | |
| CN107267958A (zh) | 喷头 | |
| WO2019227861A1 (zh) | 上电极组件、反应腔室以及原子层沉积设备 | |
| KR20110094115A (ko) | 플라즈마 처리 장치 및 마이크로 크리스탈 실리콘의 성막 방법 | |
| JPH0543094Y2 (enrdf_load_stackoverflow) | ||
| CN214830646U (zh) | 一种lpcvd进气结构 | |
| TW550727B (en) | Semiconductor device fabrication apparatus having multi-hole angled gas injection system | |
| JP2783796B2 (ja) | 堆積膜形成装置及びプラズマ処理装置 | |
| JP3716086B2 (ja) | プラズマ化学蒸着装置 | |
| CN217378026U (zh) | 一种管式pecvd设备 | |
| JPH0437126A (ja) | ドライエッチング装置 | |
| KR20050024949A (ko) | 플라즈마 식각 장치 | |
| CN210560740U (zh) | 一种pecvd特气管路 | |
| JPH0590939U (ja) | プラズマｃｖｄ装置 | |
| CN222795725U (zh) | 对称沉积装置 | |
| CN222088553U (zh) | 一种炉管结构以及扩散设备 | |
| JP2848755B2 (ja) | プラズマｃｖｄ装置 | |
| TWI409358B (zh) | 電漿輔助化學氣相沉積裝置 | |
| JPS634615A (ja) | 半導体装置製造装置 | |
| CN215481251U (zh) | 气体喷淋头以及等离子体处理装置 | |
| JP2798225B2 (ja) | 高周波プラズマｃｖｄ装置 | |
| CN222990206U (zh) | 一种进气管组和沉积装置 | |
| CN222861629U (zh) | 进气结构及反应炉 |