JPH0541340A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0541340A
JPH0541340A JP3197556A JP19755691A JPH0541340A JP H0541340 A JPH0541340 A JP H0541340A JP 3197556 A JP3197556 A JP 3197556A JP 19755691 A JP19755691 A JP 19755691A JP H0541340 A JPH0541340 A JP H0541340A
Authority
JP
Japan
Prior art keywords
pattern
name identification
identification pattern
process name
photolithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3197556A
Other languages
Japanese (ja)
Inventor
Takao Tanaka
隆夫 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3197556A priority Critical patent/JPH0541340A/en
Publication of JPH0541340A publication Critical patent/JPH0541340A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decide an erroneous work due to an error of a process name of a product name in photolithography processes easily and reliably and to detect the erroneous work in its early stages. CONSTITUTION:A process name identification pattern 5 consisting of a rectangular form is provided within a semiconductor chip 1, a first process name identification pattern 5A in a first photolithography process and a second process name identification pattern 5B in a second photolithography process, which is continued to the first photolithography process, adjoins each other and process name identification patterns to correspond to photolithography processes are provided in order.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置に関し、特に
ホトリソグラフィ工程における工程識別の自動化を可能
とする半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device which enables automation of process identification in a photolithography process.

【0002】[0002]

【従来の技術】従来の半導体装置の製造方法におけるホ
トリソグラフィ工程について図面を参照して説明する。
2. Description of the Related Art A photolithography process in a conventional method of manufacturing a semiconductor device will be described with reference to the drawings.

【0003】図5は、従来の半導体装置のホトリソグラ
フィ工程に適用する識別数値パターンの一例の平面図で
ある。
FIG. 5 is a plan view of an example of an identification numerical pattern applied to a conventional photolithography process of a semiconductor device.

【0004】従来の半導体装置では、図5に示すよう
に、半導体チップ1上に各ホトリソグラフィ工程毎に製
品名識別用数値パターン8及び工程名識別用数値パター
ン9を半導体素子の形成と同時に形成しており、識別用
数値パターン8,9を人間が光学顕微鏡で観察し、指定
される製品名及び工程名と同一であるか否かを調べるこ
とによりホトリソグラフィ工程での誤作業の有無を判断
している。
In a conventional semiconductor device, as shown in FIG. 5, a product name identifying numerical pattern 8 and a process name identifying numerical pattern 9 are formed on a semiconductor chip 1 for each photolithography process simultaneously with the formation of semiconductor elements. By observing the identification numerical patterns 8 and 9 with an optical microscope and checking whether or not they are the same as the designated product name and process name, it is determined whether or not there is an erroneous operation in the photolithography process. is doing.

【0005】[0005]

【発明が解決しようとする課題】この従来の半導体装置
における問題点を以下に示す。
The problems in this conventional semiconductor device will be described below.

【0006】第1に、製品名識別用数値パターン8及び
工程名識別用数値パターン9は、各ホトリソグラフィ工
程毎に半導体チップ1内の異なる位置に形成すると半導
体チップ1内の占有面積が大きくなるため、通常、工程
名識別用数値パターン9は、前工程で形成された工程名
識別用数値パターンと同一位置に重ねて形成し、又、パ
ターンの重ね合わせによる形状不良、ごみの発生防止の
ため製品名識別用数値パターン8は、最初のホトリソグ
ラフィ工程のみに形成される。従って、工程名識別用数
値パターン9は複数個の数値パターンが積層形成される
ため自動化による識別が困難であり、又、人間による光
学顕微鏡を用いた識別においても熟練を要するという問
題点があった。更に、製品識別用数値パターン8も後工
程のエッチング工程、或いは、成膜工程を経る度に輪郭
が不鮮明になり、顕微鏡観察及び自動化による識別が困
難であるという問題点があった。
First, if the product name identifying numerical pattern 8 and the process name identifying numerical pattern 9 are formed at different positions in the semiconductor chip 1 for each photolithography process, the occupied area in the semiconductor chip 1 becomes large. Therefore, normally, the process name identifying numerical pattern 9 is formed at the same position as the process name identifying numerical pattern formed in the previous process, and also in order to prevent shape defects and dust due to the overlapping of the patterns. The product name identification numerical pattern 8 is formed only in the first photolithography process. Therefore, the numerical pattern 9 for identifying the process name has a problem that a plurality of numerical patterns are stacked and formed, so that it is difficult to perform the identification by automation, and that the identification also requires a skill for a person using an optical microscope. .. Further, the numerical pattern 8 for product identification also has a problem that the contour becomes unclear each time the etching process or the film forming process is performed as a post-process, and it is difficult to perform microscopic observation and identification by automation.

【0007】第2に、ゲートアレイ製品、スタンダード
セル製品の場合、図5に示すように、同一のチップ寸法
を有し、外部素子領域3のパターンを共通として内部素
子領域2のパターンのみが異なる複数の製品が同時に製
造されることがある。回路パターン設計効率化の視点か
らはチップ内の同一位置に製品名識別数値パターン8及
び工程名識別数値パターン9を配することが効率的であ
る。従って、同一製品内でホトリソグラフィ工程のホト
マスクを間違える誤作業以外に、同一チップ寸法である
場合、同一工程の別製品のホトマスクを適用する誤作業
発生の可能性があり、この場合は、外部素子領域3及び
工程名識別用数値パターン9のみの観察では誤作業の有
無の検出が行えず、よって、内部素子領域2の観察を行
う必要を生じる。その結果、特定製品において特別な顕
微鏡観察を必要とするという製造工程ラインにおける作
業の能率低下の原因となるという問題点があった。
Secondly, in the case of the gate array product and the standard cell product, as shown in FIG. 5, the chip size is the same, the pattern of the external element region 3 is common, and only the pattern of the internal element region 2 is different. Multiple products may be manufactured simultaneously. From the viewpoint of improving the efficiency of circuit pattern design, it is efficient to arrange the product name identification numerical value pattern 8 and the process name identification numerical value pattern 9 at the same position in the chip. Therefore, in addition to erroneous work in which the photomask in the photolithography process is mistaken in the same product, when the chip size is the same, there is a possibility of erroneous work in which a photomask of another product in the same process is applied. By observing only the region 3 and the numerical pattern 9 for identifying the process name, it is not possible to detect the presence or absence of erroneous work, and therefore it is necessary to observe the internal element region 2. As a result, there has been a problem that a special product requires special microscopic observation, which causes a reduction in work efficiency in the manufacturing process line.

【0008】本発明の目的は、顕微鏡観察及び自動化に
よる識別が容易で誤作業がなく、製造工程ラインにおけ
る作業能率の高い半導体装置を提供することにある。
An object of the present invention is to provide a semiconductor device which can be easily identified by microscopic observation and automation, has no erroneous work, and has high work efficiency in a manufacturing process line.

【0009】[0009]

【課題を解決するための手段】本発明は、工程名識別パ
ターンを有する半導体装置において、前記工程名識別パ
ターンは矩形形状より成り、第1のホトリソグラフィ工
程における第1の工程名識別パターンと前記第1のホト
リソグラフィ工程に連続する第2のホトリソグラフィ工
程における第2の工程名識別パターンとが隣接して順次
ホトリソグラフィ工程に対応した工程名識別パターンが
設けられる。
According to the present invention, in a semiconductor device having a process name identification pattern, the process name identification pattern has a rectangular shape, and the first process name identification pattern in the first photolithography process and the A process name identification pattern corresponding to the photolithography process is sequentially provided adjacent to the second process name identification pattern in the second photolithography process that is continuous with the first photolithography process.

【0010】[0010]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。
Embodiments of the present invention will now be described with reference to the drawings.

【0011】図1(a),(b)は本発明の第1の実施
例を説明する平面図で(a)は半導体チップの平面図、
(b)は(a)の外部素子領域の角部に設けられた工程
名識別パターンの部分拡大平面図である。
1A and 1B are plan views illustrating a first embodiment of the present invention, and FIG. 1A is a plan view of a semiconductor chip.
(B) is a partial enlarged plan view of the process name identification pattern provided at the corner of the external element region of (a).

【0012】図1の実施例は、図1(a),(b)に示
すように、工程名識別パターン5は1個が短辺2μm,
長辺10μmよりなる矩形5A,5B,5C,…の群よ
り構成され、各ホトリソグラフィ工程毎に1個ずつ長辺
を隣接して形成される。即ち、第1の製品においては、
第1の工程において工程名識別パターン5Aを形成し、
更に、次工程で工程名識別パターン5Aに隣接して工程
名識別パターン5Bを形成し、更に次工程で工程名識別
パターン5Bに隣接して工程名識別パターン5Cを形成
する。この場合、第1の製品における工程名識別パター
ン5Aの対角線の交点の座標を(XA ,YA )とすれ
ば、工程名識別パターン5Bは座標(XA +2μm,Y
A )に、工程名識別パターン5Cは座標(XA +4μ
m,YA )にそれぞれ配置される。更に、工程名識別パ
ターン5は、第2の製品においては、工程名識別パター
ン5A1が(XA ,YA +6μm)に、工程名識別パタ
ーン5B1が(XA +2μm,YA +6μm)に、工程
名識別パターン5C1が(XA +4μm,YA +6μ
m)にそれぞれ配置される。
In the embodiment of FIG. 1, as shown in FIGS. 1A and 1B, one process name identification pattern 5 has a short side of 2 μm,
It is composed of a group of rectangles 5A, 5B, 5C, ... Each having a long side of 10 μm, and one long side is formed adjacent to each photolithography process. That is, in the first product,
In the first step, the process name identification pattern 5A is formed,
Further, in the next step, the step name identification pattern 5B is formed adjacent to the step name identification pattern 5A, and in the next step, the step name identification pattern 5C is formed adjacent to the step name identification pattern 5B. In this case, if the coordinates of the intersection of the diagonals of the process name identification pattern 5A in the first product are (X A , Y A ), the process name identification pattern 5B will have the coordinates (X A +2 μm, Y
A ), the process name identification pattern 5C has coordinates (X A +4 μ
m, Y A ) respectively. Furthermore, process name identification pattern 5, in the second product, process name identification pattern 5A1 is (X A, Y A + 6μm ) , the process name identification pattern 5B1 is (X A + 2μm, Y A + 6μm) , a step The name identification pattern 5C1 is (X A +4 μm, Y A +6 μ
m).

【0013】図2はホトリソグラフィ工程において工程
名のみ異るホトマスクを適用する誤りが発生した場合の
工程名識別パターンの一例の平面図である。
FIG. 2 is a plan view of an example of a process name identification pattern when an error occurs in applying a photomask having only different process names in the photolithography process.

【0014】従って、図2に示すように、ホトリソグラ
フィ工程において、工程名のみ異なるホトマスクを適用
する誤りが発生した場合には、工程名識別パターン5C
及び5Dが隣接した位置に形成されないため、容易、か
つ、確実に誤作業を検出することができる。
Therefore, as shown in FIG. 2, in the photolithography process, when an error occurs in applying a photomask having only different process names, the process name identification pattern 5C.
Since 5D and 5D are not formed at adjacent positions, an erroneous operation can be detected easily and reliably.

【0015】また、工程名識別パターン5の上をHe−
Neレーザー光でレーザー光走査6に示す線上を走査さ
せ、その回折,散乱光の強度の波形を検出することによ
り、矩形5A,5B,5C,…の数及び連続性を検出し
それまでに行われたホトリソグラフィ工程数との対応か
らホトリソグラフィ工程の誤作業識別の自動化ができ
る。
In addition, He-
The number and continuity of the rectangles 5A, 5B, 5C, ... Are detected by scanning the line shown in the laser beam scanning 6 with the Ne laser beam and detecting the intensity waveform of the diffraction and scattered light. Corresponding to the number of photolithography steps that have been broken down, erroneous work identification in the photolithography step can be automated.

【0016】図3は同一チップ寸法の製品間で誤りが発
生した場合の工程名識別パターンの一例の平面図であ
る。
FIG. 3 is a plan view of an example of a process name identification pattern when an error occurs between products having the same chip size.

【0017】また、図3に示すように、同一チップ寸法
の製品間での誤作業検出については、工程識別パターン
5A1,5B1,5C1と工程名識別パターン5D1と
が連続して形成されないことにより、容易、かつ、確実
に検出することができる。この場合、レーザーのスポッ
ト光が直径2μmの円内に照射されるものとすると製品
間の工程名識別パターン5の占有面積は縦64μm×横
40μmとなる。
Further, as shown in FIG. 3, in the case of erroneous work detection between products having the same chip size, the process identification patterns 5A1, 5B1, 5C1 and the process name identification pattern 5D1 are not formed consecutively. It can be detected easily and surely. In this case, if the spot light of the laser is applied to a circle having a diameter of 2 μm, the area occupied by the process name identification pattern 5 between products is 64 μm in length × 40 μm in width.

【0018】図4は本発明の第2の実施例の工程名識別
パターンの平面図である。
FIG. 4 is a plan view of a process name identification pattern according to the second embodiment of the present invention.

【0019】第2の実施例は、図4に示すように、第1
の実施例に比べ工程名識別パターン5の位置を横方向に
1μmずらして配置をするものであり、半導体チップ内
に占める工程名識別パターン5の占有面積を小さくする
ことができる。この場合、縦方向のずらしがない場合で
もレーザー光で走査して測定された長さが短辺2μmの
整数倍か否かで2品種の識別が可能である。従って、第
1の実施例に比べ第2の実施例ではX方向の1μmのず
らしを適用することにより、ほとんど占有面積を増加す
ることなく2品種の識別を行うことができる。よって、
10品種,ホトグラフィ工程数20の場合、半導体チッ
プ内に占める工程名識別パターン5の占有面積は縦34
μm×横42μmとなり第1の実施例と比較し約1/2
に減少できる。
In the second embodiment, as shown in FIG. 4, the first embodiment
Compared with the embodiment described above, the position of the process name identification pattern 5 is laterally displaced by 1 μm, and the area occupied by the process name identification pattern 5 in the semiconductor chip can be reduced. In this case, even if there is no vertical shift, it is possible to discriminate between the two types depending on whether or not the length measured by scanning with the laser beam is an integral multiple of the short side of 2 μm. Therefore, in comparison with the first embodiment, by applying the shift of 1 μm in the X direction in the second embodiment, it is possible to discriminate between the two types without increasing the occupied area. Therefore,
In the case of 10 types and 20 photography processes, the occupation area of the process name identification pattern 5 in the semiconductor chip is 34 in length.
μm × horizontal 42 μm, which is about 1/2 of that of the first embodiment
Can be reduced to

【0020】[0020]

【発明の効果】以上説明したように本発明は、ホトリソ
グラフィ工程における製品及び工程の識別のためのパタ
ーンとして数値パターンを用いず隣接形成した矩形の工
程名識別パターンを用いるものであり、工程名識別パタ
ーンの位置により、製品間の識別を縦方向にて、工程順
序の識別を横方向にて検出するものである。従って、誤
作業の検出をパターンの連続性を利用して顕微鏡観察に
より、容易、かつ、確実に発見でき、又、識別の自動化
も可能であり、特に、同一チップサイズの異なる製品群
に対して有効な識別が可能である。
As described above, according to the present invention, a rectangular process name identification pattern formed adjacently is used as a pattern for identifying a product and a process in a photolithography process without using a numerical pattern. Depending on the position of the identification pattern, the identification between products is detected in the vertical direction, and the identification of the process sequence is detected in the horizontal direction. Therefore, detection of erroneous work can be easily and surely detected by microscopic observation using the continuity of patterns, and automation of identification is also possible, especially for different product groups with the same chip size. A valid identification is possible.

【0021】尚、本発明の工程名識別パターンは占有面
積も小さくできるため従来の数値パターンによる製品
名,工程名との並用も可能であるという以上の効果を有
する。
Since the process name identification pattern of the present invention can also occupy a small area, it has the above effect that it can be used in combination with the product name and process name by the conventional numerical pattern.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を説明する平面図であ
る。
FIG. 1 is a plan view illustrating a first embodiment of the present invention.

【図2】ホトリソグラフィ工程において工程名のみ異る
ホトマスクを適用する誤りが発生した場合の工程名識別
パターンの一例の平面図である。
FIG. 2 is a plan view of an example of a process name identification pattern when an error occurs in applying a photomask having only different process names in the photolithography process.

【図3】同一チップ寸法の製品間で誤りが発生した場合
の工程名識別パターンの一例の平面図である。
FIG. 3 is a plan view of an example of a process name identification pattern when an error occurs between products having the same chip size.

【図4】本発明の第2の実施例の工程名識別パターンの
平面図である。
FIG. 4 is a plan view of a process name identification pattern according to a second embodiment of the present invention.

【図5】従来の半導体装置のホトリソグラフィ工程に適
用する識別数値パターンの一例の平面図である。
FIG. 5 is a plan view of an example of an identification numerical pattern applied to a photolithography process of a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 内部素子領域 3 外部素子領域 4 角部 5,7 工程名識別パターン 6 レーザー光走査 8 製品名識別数値パターン 9 工程名識別数値パターン 1 Semiconductor Chip 2 Internal Element Area 3 External Element Area 4 Corners 5, 7 Process Name Identification Pattern 6 Laser Scanning 8 Product Name Identification Numerical Pattern 9 Process Name Identification Numerical Pattern

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 工程名識別パターンを有する半導体装置
において、前記工程名識別パターンは矩形形状より成
り、第1のホトリソグラフィ工程における第1の工程名
識別パターンと前記第1のホトリソグラフィ工程に連続
する第2のホトリソグラフィ工程における第2の工程名
識別パターンとが隣接して順次ホトリソグラフィ工程に
対応した工程名識別パターンが設けられることを特徴と
する半導体装置。
1. A semiconductor device having a process name identification pattern, wherein the process name identification pattern has a rectangular shape and is continuous with the first process name identification pattern in the first photolithography process and the first photolithography process. A semiconductor device characterized in that a step name identification pattern corresponding to the photolithography step is sequentially provided adjacent to the second step name identification pattern in the second photolithography step.
JP3197556A 1991-08-07 1991-08-07 Semiconductor device Pending JPH0541340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3197556A JPH0541340A (en) 1991-08-07 1991-08-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3197556A JPH0541340A (en) 1991-08-07 1991-08-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0541340A true JPH0541340A (en) 1993-02-19

Family

ID=16376462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3197556A Pending JPH0541340A (en) 1991-08-07 1991-08-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0541340A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8678140B2 (en) 2005-10-11 2014-03-25 Otis Elevator Company Electromagnet and elevator door coupler

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8678140B2 (en) 2005-10-11 2014-03-25 Otis Elevator Company Electromagnet and elevator door coupler

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