JPH053749B2 - - Google Patents
Info
- Publication number
- JPH053749B2 JPH053749B2 JP61009584A JP958486A JPH053749B2 JP H053749 B2 JPH053749 B2 JP H053749B2 JP 61009584 A JP61009584 A JP 61009584A JP 958486 A JP958486 A JP 958486A JP H053749 B2 JPH053749 B2 JP H053749B2
- Authority
- JP
- Japan
- Prior art keywords
- base
- scattering
- electrons
- collector
- mini
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 12
- 239000002784 hot electron Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 230000003321 amplification Effects 0.000 description 12
- 238000003199 nucleic acid amplification method Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000005535 acoustic phonon Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 235000019988 mead Nutrition 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP958486A JPS62166564A (ja) | 1986-01-20 | 1986-01-20 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP958486A JPS62166564A (ja) | 1986-01-20 | 1986-01-20 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62166564A JPS62166564A (ja) | 1987-07-23 |
| JPH053749B2 true JPH053749B2 (ko) | 1993-01-18 |
Family
ID=11724363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP958486A Granted JPS62166564A (ja) | 1986-01-20 | 1986-01-20 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62166564A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8810032D0 (en) * | 1988-04-28 | 1988-06-02 | Secr Defence | Hot electron transistors |
| US5477060A (en) * | 1993-06-25 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Army | Infrared hot electron transistor with a superlattice base |
| JP5182775B2 (ja) * | 2006-03-22 | 2013-04-17 | 国立大学法人大阪大学 | トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210679A (ja) * | 1985-03-15 | 1986-09-18 | Sony Corp | 半導体装置 |
-
1986
- 1986-01-20 JP JP958486A patent/JPS62166564A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210679A (ja) * | 1985-03-15 | 1986-09-18 | Sony Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62166564A (ja) | 1987-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |