JPH0533811B2 - - Google Patents
Info
- Publication number
- JPH0533811B2 JPH0533811B2 JP195087A JP195087A JPH0533811B2 JP H0533811 B2 JPH0533811 B2 JP H0533811B2 JP 195087 A JP195087 A JP 195087A JP 195087 A JP195087 A JP 195087A JP H0533811 B2 JPH0533811 B2 JP H0533811B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- reaction chamber
- deposition reaction
- chuck
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP195087A JPS63179515A (ja) | 1987-01-09 | 1987-01-09 | 化学蒸着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP195087A JPS63179515A (ja) | 1987-01-09 | 1987-01-09 | 化学蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63179515A JPS63179515A (ja) | 1988-07-23 |
JPH0533811B2 true JPH0533811B2 (enrdf_load_stackoverflow) | 1993-05-20 |
Family
ID=11515884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP195087A Granted JPS63179515A (ja) | 1987-01-09 | 1987-01-09 | 化学蒸着装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63179515A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0238571A (ja) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | 処理装置 |
-
1987
- 1987-01-09 JP JP195087A patent/JPS63179515A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63179515A (ja) | 1988-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4709655A (en) | Chemical vapor deposition apparatus | |
US4796562A (en) | Rapid thermal cvd apparatus | |
JP7046162B2 (ja) | 高選択性酸化物除去および高温汚染物質除去と統合されたエピタキシシステム | |
CA2138292C (en) | Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd | |
KR100277807B1 (ko) | 열흐름과 기체유동을 제어한 반도체웨이퍼처리방법 및 장치 | |
US8123860B2 (en) | Apparatus for cyclical depositing of thin films | |
KR101201964B1 (ko) | 에피택셜 증착 프로세스 및 장치 | |
US5273588A (en) | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means | |
JPS6256232B2 (enrdf_load_stackoverflow) | ||
JP2007113119A (ja) | 基板裏面への堆積を減少させる処理装置及び処理方法 | |
JPS634632B2 (enrdf_load_stackoverflow) | ||
KR20010034921A (ko) | 정화 가스 채널과 펌핑 시스템을 갖는 기판 지지 부재 | |
TWI387667B (zh) | 用於自化學氣相蝕刻處理室移除副產物沉積的原位處理室清潔製程 | |
JP2005054254A (ja) | シャワーヘッド、薄膜製造装置及び製造方法 | |
JP2990551B2 (ja) | 成膜処理装置 | |
JPH0533811B2 (enrdf_load_stackoverflow) | ||
JP3738494B2 (ja) | 枚葉式の熱処理装置 | |
JPH03190218A (ja) | 半導体製造装置 |