JPH0532917B2 - - Google Patents

Info

Publication number
JPH0532917B2
JPH0532917B2 JP57131186A JP13118682A JPH0532917B2 JP H0532917 B2 JPH0532917 B2 JP H0532917B2 JP 57131186 A JP57131186 A JP 57131186A JP 13118682 A JP13118682 A JP 13118682A JP H0532917 B2 JPH0532917 B2 JP H0532917B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
temperature
fixed
heating element
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57131186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5922381A (ja
Inventor
Yoshinori Sugiura
Junji Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP13118682A priority Critical patent/JPS5922381A/ja
Publication of JPS5922381A publication Critical patent/JPS5922381A/ja
Publication of JPH0532917B2 publication Critical patent/JPH0532917B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP13118682A 1982-07-29 1982-07-29 半導体レ−ザ装置 Granted JPS5922381A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13118682A JPS5922381A (ja) 1982-07-29 1982-07-29 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13118682A JPS5922381A (ja) 1982-07-29 1982-07-29 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5922381A JPS5922381A (ja) 1984-02-04
JPH0532917B2 true JPH0532917B2 (zh) 1993-05-18

Family

ID=15052022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13118682A Granted JPS5922381A (ja) 1982-07-29 1982-07-29 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5922381A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229267A (ja) * 1985-04-02 1986-10-13 Pioneer Electronic Corp デイスクプレ−ヤ
JPH0510373Y2 (zh) * 1985-05-09 1993-03-15
DE4235768A1 (de) * 1992-10-24 1994-05-19 Cho Ok Kyung Modifizierte Halbleiterlaserdiode mit integriertem Temperaturregelungsteil
JP4586846B2 (ja) * 2003-01-31 2010-11-24 住友電気工業株式会社 光送信器
JP4114603B2 (ja) 2003-01-31 2008-07-09 住友電気工業株式会社 光送信器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453336A (en) * 1977-10-06 1979-04-26 Jiyunichi Narita Surface heating element
JPS5464984A (en) * 1977-11-02 1979-05-25 Canon Inc Semiconductor laser device
JPS5551858B2 (zh) * 1977-04-30 1980-12-26

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5551858U (zh) * 1978-10-02 1980-04-05

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5551858B2 (zh) * 1977-04-30 1980-12-26
JPS5453336A (en) * 1977-10-06 1979-04-26 Jiyunichi Narita Surface heating element
JPS5464984A (en) * 1977-11-02 1979-05-25 Canon Inc Semiconductor laser device

Also Published As

Publication number Publication date
JPS5922381A (ja) 1984-02-04

Similar Documents

Publication Publication Date Title
US4338577A (en) Semiconductor laser apparatus
RU2121766C1 (ru) Инфракрасная камера и способ считывания изменений удельного сопротивления пассивных принимающих излучение элементов
US5446750A (en) Laser diode pumped solid laser
GB2131607A (en) Semiconductor laser device
JP2761333B2 (ja) 温度安定化型レーザ装置
US7091462B2 (en) Transmitter with laser monitoring and wavelength stabilization circuit
EP0762567B1 (en) Temperature-controlled semiconductor laser apparatus and temperature control method therefor
KR19990072839A (ko) 레이저출력측정장치
JP2006324524A (ja) 発光モジュール
JPH0532917B2 (zh)
US6590693B2 (en) Light modulation
US6829263B1 (en) Semiconductor laser
JPS59204292A (ja) 半導体装置
JP3049469B2 (ja) レーザ出力検出装置
JP4114260B2 (ja) 固体レーザ装置
JPS6171689A (ja) 半導体レ−ザ装置
JP3196300B2 (ja) 半導体レーザ装置
JPS5922382A (ja) 半導体レ−ザ装置
JPH07302949A (ja) 波長安定化装置
GB2218566A (en) Light emitting package
JPH06326384A (ja) 半導体レーザ素子駆動回路
SU980251A1 (ru) Прецизионный кварцевый резонатор
JPS60143683A (ja) 光源装置
JPS61166194A (ja) 半導体レ−ザ装置
JPS61131580A (ja) 半導体レ−ザ装置