JPH05326788A - Lead frame material and semiconductor device provided therewith - Google Patents
Lead frame material and semiconductor device provided therewithInfo
- Publication number
- JPH05326788A JPH05326788A JP4132717A JP13271792A JPH05326788A JP H05326788 A JPH05326788 A JP H05326788A JP 4132717 A JP4132717 A JP 4132717A JP 13271792 A JP13271792 A JP 13271792A JP H05326788 A JPH05326788 A JP H05326788A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- lead frame
- thin
- inner lead
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は特殊加工したインナーリ
ード用素材及びこの素材を利用した半導体装置に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a specially processed inner lead material and a semiconductor device using this material.
【０００２】[0002]
【従来の技術】半導体素子に形成される集積回路は、年
を追うごとに高集積、高機能化されており、これに伴っ
て接続回路も著しい多ピン構造となっている。この多ピ
ン構造にするために必然的に要求されるのが、リードフ
レームのファインピッチ化である。2. Description of the Related Art An integrated circuit formed on a semiconductor element has been highly integrated and highly functionalized year by year, and accordingly, a connection circuit has a remarkably multi-pin structure. What is inevitably required to achieve this multi-pin structure is the fine pitch of the lead frame.
【０００３】従来、リードフレームを加工する方法に
は、マスキングした素材を腐食液中でエッチングしてリ
ード等を成形するエッチング法、或いはプレス打抜きで
成形するプレス加工法がある。プレス加工法は比較的簡
易にリードフレームを成形できるが、多ピン化傾向に対
応して数百オーダーのリードを加工するのは困難とされ
ている。一方、エチィング法ではプレス加工法に較べて
加工工数が多くコストも高いが、比較的高精度のファイ
ンピッチ化が可能となる。Conventionally, as a method of processing a lead frame, there is an etching method in which a masked material is etched in a corrosive solution to form a lead or the like, or a press processing method in which a lead is formed by press punching. Although the press working method can relatively easily form a lead frame, it is difficult to process a lead of several hundred orders in response to the tendency of increasing the number of pins. On the other hand, the etching method requires a large number of processing steps and is high in cost as compared with the press processing method, but it is possible to achieve a fine pitch with relatively high accuracy.
【０００４】通常、リードフレームをファインピッチ化
する場合に、リード幅の限界は板厚の７〜８割程度とい
われている。従って、更にファインピッチ化するために
リード幅を狭くするには板厚を薄くする必要がある。し
かし、板厚を薄くすることは強度不足を招くことにな
り、ハンドリングや接合等においてリードが曲ったり、
折れたりする不都合が起りやすい。It is generally said that when the lead frame is made finer, the lead width is limited to about 70 to 80% of the plate thickness. Therefore, it is necessary to reduce the plate thickness in order to reduce the lead width in order to achieve a finer pitch. However, reducing the plate thickness leads to insufficient strength, bending of the lead during handling and joining,
Inconvenience such as breaking easily occurs.
【０００５】また、従来のリードフレーム素材は厚さが
均等であるが、エッチングでリードフレームを制作する
際に均一に腐食されない場合があり、特に幅が狭くなる
リードフレーム先端部分は、その断面を図８に示すよう
に腐食が局部的に進行し、均一な断面にならないことが
ある。従って、強度低下を生じることがあると共に特に
表面部にも腐食が及ぶと接合面積が不足し、ワイヤボン
ディングが不可能となることがある。Although the conventional lead frame material has a uniform thickness, it may not be uniformly corroded when the lead frame is produced by etching. As shown in FIG. 8, corrosion may locally progress and a uniform cross section may not be obtained. Therefore, the strength may be reduced, and particularly when the surface portion is also corroded, the bonding area becomes insufficient, and wire bonding may become impossible.
【０００６】[0006]
【発明が解決しようとする課題】このように、現状では
多ピン化に伴うリード先端幅とピッチの加工は限界に入
っているといえる。本発明は上記したような現状の問題
点を解消するものであって、リードフレームの先端部分
（インナーリード部分）を薄肉にし、リード成形後にお
ける断面形状が均一になると共に一層の多ピン構造に適
合し得るリードフレーム素材、及び該素材を加工して制
作したリードフレームを用いる半導体装置を提供するこ
とを目的とするものである。As described above, at present, it can be said that the processing of the lead tip width and the pitch due to the increase in the number of pins has reached the limit. SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the present situation by making the leading end portion (inner lead portion) of the lead frame thin so that the cross-sectional shape after lead molding becomes uniform and a more multi-pin structure is formed. An object of the present invention is to provide a compatible lead frame material and a semiconductor device using a lead frame manufactured by processing the material.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に本発明は以下の構成を要旨とする。すなわち、 (1)製品厚さにしたリードフレーム素材板に、あらかじ
め定めたリードフレーム採寸ピッチ内で、リードフレー
ムの少なくともインナーリード先端となる部分を薄肉化
したことを特徴とするとするリードフレーム素材。 (2)前記インナーリード先端となる部分を、プレス加工
で薄肉凹部に形成してなることを特徴とするリードフレ
ーム素材。 (3)前記リードフレームの少なくともインナーリード先
端となる部分を素材より除去し、この除去した部分に薄
肉板を接合したことを特徴とするとするリードフレーム
素材。 (4)前各項のリードフレーム素材をエッチング、プレス
等公知の手段で薄肉インナーリード部を有するリードフ
レームに成形し、ダイパッドに搭載した半導体素子と、
前記薄肉インナーリードを細線で連結した構成体を樹脂
封止したことを特徴とする半導体装置である。In order to achieve the above object, the present invention has the following structures. That is, (1) a lead frame material characterized in that a lead frame material plate having a product thickness has a thinned portion at least the inner lead tips of the lead frame within a predetermined lead frame measuring pitch. (2) A lead frame material characterized in that a portion which becomes the tip of the inner lead is formed into a thin recess by press working. (3) A lead frame material, characterized in that at least a portion of the lead frame, which will be the tip of the inner lead, is removed from the material, and a thin plate is joined to the removed portion. (4) A semiconductor element mounted on a die pad by molding the lead frame material of the preceding items into a lead frame having a thin inner lead portion by a known means such as etching and pressing,
A semiconductor device is characterized in that a structure in which the thin inner leads are connected by a thin wire is resin-sealed.
【０００８】以下に本発明を詳細に説明する。図１は本
発明のリードフレーム素材１の一例を示す。この素材は
従来使用されている４２Ｎｉ合金或いはＣｕ等からなる
合金や金属であり、圧延で製造された板（帯）から切り
出されたものである。素材の厚さは種々あるが、現状で
多ピン限界とされる厚さは１００〜１５０μｍであり、
本発明はこの様な素材をベースにしても、現状以上の一
層の多ピン化傾向に対応できる。The present invention will be described in detail below. FIG. 1 shows an example of a lead frame material 1 of the present invention. This material is a conventionally used 42Ni alloy or an alloy or metal composed of Cu or the like, which is cut out from a plate (band) manufactured by rolling. Although there are various thicknesses of materials, the thickness that is currently considered as a multi-pin limit is 100 to 150 μm,
The present invention is capable of coping with the tendency toward higher pin counts than the current situation, even if such materials are used as a base.
【０００９】本発明は上記した材質の素材１から、リー
ドフレームを従来より行われているエッチング法を用い
て採取するのであるが、それに先立って、エッチングパ
ターンに基づき、素材表面に予め定めたリードフレーム
採取位置決めをし、そのリード先端部分、即ちインナー
リード部分或いは最小限インナーリードの先端となる部
分に、薄肉化した凹部２（２ａ〜２ｎ）を形成する。採
取すべきリードフレームの一例をＢ部（点線）に示し
た。According to the present invention, the lead frame is sampled from the raw material 1 of the above-mentioned material by the conventional etching method. Prior to that, the lead frame previously determined on the raw material surface based on the etching pattern is taken. The frame is sampled and positioned, and thinned recesses 2 (2a to 2n) are formed in the lead tip portion, that is, the inner lead portion or at least the tip of the inner lead. An example of the lead frame to be sampled is shown in part B (dotted line).
【００１０】凹部２の形成は、凹部２成形用の凸部を有
する押型（図示せず）でプレスする方法を採用すること
が好ましい。これにより圧下成形される薄肉部３は元の
厚さより最低でも１／６は減厚される。減厚度合はピン
数や材質によっても異なるが、あまり薄くするとハンド
リング等に不便を来すので元の厚さの２／３を超えない
ようにすることが望ましい。しかもこの様な減厚部分は
プレスにより強度が上昇する。図２に図１のＡ−Ａ線断
面、即ち凹部２断面の一例を拡大して示しているよう
に、インナーリード及びパッド部分を凹部としている。
凹部２はこの様な断面形状に限らず、例えば図３に示す
ように半導体素子を載置するダイパッド４部分は圧下を
せず、インナーリードとなる部分のみに圧下を加えて凹
部２を形成してもよい。凹部２の裏側にはプレスにより
材料が突出することもあるが、この場合はグラインダー
等によって除去すればよい。The depression 2 is preferably formed by pressing with a pressing die (not shown) having a projection for molding the depression 2. As a result, the thickness of the thin-walled portion 3 formed by the reduction is reduced to at least 1/6 of the original thickness. Although the degree of reduction in thickness depends on the number of pins and the material, if it is too thin, it will be inconvenient for handling, so it is desirable not to exceed 2/3 of the original thickness. Moreover, the strength of such a reduced thickness portion is increased by pressing. As shown in FIG. 2 by enlarging an example of a cross section taken along the line AA of FIG. 1, that is, a cross section of the recess 2, the inner lead and the pad portion are recesses.
The recess 2 is not limited to such a cross-sectional shape. For example, as shown in FIG. 3, the die pad 4 portion on which the semiconductor element is mounted is not pressed down, and the recess 2 is formed only by applying the pressure to the portion to be the inner lead. May be. The material may be projected on the back side of the recess 2 by pressing, but in this case, it may be removed by a grinder or the like.
【００１１】また、凹部２の形成方法は上記に限らず、
例えば図４に示すように、先ずインナーリードとなる部
分を打抜き、この打抜いた部分に別の薄肉部材５をロウ
付け、溶接等の公知の接合手段で一体的に強固に接続６
する方法を採用できる。The method of forming the recess 2 is not limited to the above,
For example, as shown in FIG. 4, first, an inner lead portion is punched, another thin member 5 is brazed to the punched portion, and firmly connected integrally by a known joining means such as welding 6
Can be adopted.
【００１２】この様に凹部２を形成した素材は、その凹
部を含む表面にホトレジストでエッチングパターンを形
成し、公知の手段でエッチングを行うことにより、図５
に断面パターンを示すように、通常の肉厚を持つアウタ
ーリード部７とアウターリード部７のほぼ２／３以下の
厚さを有するインナーリード８及びダイパッド４からな
るリードフレーム９を得ることができる。また、この際
得られる薄肉インナーリード８は、図６に示すように表
面が浸蝕されることなく所定のボンディングエリヤを確
保する巾（min.９０μｍ）を有し、かつ表裏がほぼ等し
い均一な断面形状となっている。The material in which the recesses 2 are formed in this way is formed by forming an etching pattern with a photoresist on the surface including the recesses and performing etching by a known means.
As shown in the cross-sectional pattern, a lead frame 9 including an outer lead portion 7 having a normal wall thickness, an inner lead 8 having a thickness of approximately 2/3 or less of the outer lead portion 7 and a die pad 4 can be obtained. .. In addition, the thin inner lead 8 obtained at this time has a width (min. 90 μm) that secures a predetermined bonding area without eroding the surface as shown in FIG. It has a shape.
【００１３】図７は上記した素材より得られたリードフ
レーム９を使用した半導体装置である。即ち、薄肉化さ
れたパッド４には半導体素子１０をＡｇペーストで接合
し、同様に薄肉化されたインナーリード８にはＡｇメッ
キ１１を施して電極を設け、前記半導体素子１０と電極
１１とをＡｕ細線１２で接合した構成体を、樹脂封止１
３して半導体装置を構成している。図中１４はプリント
基盤である。FIG. 7 shows a semiconductor device using a lead frame 9 obtained from the above materials. That is, the semiconductor element 10 is bonded to the thinned pad 4 with an Ag paste, and the similarly thinned inner lead 8 is plated with Ag to provide an electrode, and the semiconductor element 10 and the electrode 11 are connected to each other. The structure bonded with the Au thin wire 12 is sealed with resin 1
3 to form a semiconductor device. Reference numeral 14 in the drawing is a print substrate.
【００１４】上記装置において、薄肉化されたインナー
リード８は従来製品に見られるような不均一さは無く、
強度も低下しておらず、むしろ組織的に強化されている
ため、ハンドリングやワイヤ接合時は勿論のこと、樹脂
封止等の実装時にもトラブルの発生はなかった。In the above apparatus, the thinned inner lead 8 does not have the unevenness as seen in the conventional products,
Since the strength was not reduced and the structure was rather strengthened, no trouble occurred not only during handling and wire joining but also during mounting such as resin sealing.
【００１５】[0015]
【発明の効果】以上のように本発明は、インナーリード
部分の板厚を薄くしたため現状の限界を打ち破るファイ
ンピッチの多ピンリードフレームの制作が容易にでき、
しかもリード先端に所定のボンディング幅を確保でき
る。また、パッド部分をも薄肉成形することにより薄型
パッケージとすることができると共にアウターリードは
従来通りに厚く成形できるのでリード変形に対しても十
分に耐えらる。このように本発明は、ますます多ピン化
する趨勢に合致する極めて有用な半導体装置を提供で来
る。As described above, according to the present invention, since the plate thickness of the inner lead portion is made thin, it is possible to easily manufacture a fine pitch multi-pin lead frame that breaks the current limit.
Moreover, a predetermined bonding width can be secured at the tip of the lead. In addition, since the pad portion can also be thinly molded to form a thin package and the outer lead can be thickly formed as in the conventional case, it is sufficiently resistant to lead deformation. As described above, the present invention provides a very useful semiconductor device that meets the trend of increasing the number of pins.
【図１】本発明リードフレーム素材の一態様を示す斜視
図。FIG. 1 is a perspective view showing one embodiment of a lead frame material of the present invention.
【図２】図１のＡ−Ａ線断面図。FIG. 2 is a sectional view taken along line AA of FIG.
【図３】本発明素材の他の凹部を示す断面図FIG. 3 is a sectional view showing another concave portion of the material of the present invention.
【図４】本発明素材凹部の別の実施態様を示す断面図。FIG. 4 is a cross-sectional view showing another embodiment of the material recessed portion of the present invention.
【図５】本発明におけるリードフレームの態様を示す断
面説明図。FIG. 5 is an explanatory cross-sectional view showing an aspect of a lead frame in the present invention.
【図６】本発明の薄肉リード部の断面図。FIG. 6 is a sectional view of the thin lead portion of the present invention.
【図７】本発明の半導体装置の一例を示す断面説明図。FIG. 7 is a cross-sectional explanatory view showing an example of a semiconductor device of the present invention.
【図８】従来のリード部の一例を示す断面説明図。FIG. 8 is a cross-sectional explanatory view showing an example of a conventional lead portion.
１：素材 ２：凹部 ３：薄肉部材 ４：ダイパッド ５：別の薄肉部材 ６：接合部 ７：アウターリード ８：インナーリード ９：リードフレーム １０：半導体素子 １１：Ａｇメッキ １２：Ａｕ細線 １３：樹脂封止 １４：プリント基盤 1: Material 2: Recessed part 3: Thin-walled member 4: Die pad 5: Another thin-walled member 6: Joined part 7: Outer lead 8: Inner lead 9: Lead frame 10: Semiconductor element 11: Ag plating 12: Au thin wire 13: Resin Sealing 14: Printed board
Claims (4)
に、あらかじめ定めたリードフレーム採寸ピッチ内で、
リードフレームの少なくともインナーリード先端となる
部分を薄肉化したことを特徴とするとするリードフレー
ム素材。1. A lead frame material plate having a product thickness, within a predetermined lead frame measuring pitch,
A lead frame material characterized in that at least a portion of the lead frame, which is the tip of the inner lead, is thinned.
とを特徴とするとする請求項１記載のリードフレーム素
材。2. The lead frame material according to claim 1, wherein the thin recess is formed by press working.
ード先端となる部分を素材より除去し、この除去した部
分に薄肉板を接合したことを特徴とするとする請求項１
記載のリードフレーム素材。3. A lead frame, at least a portion which becomes an inner lead tip is removed from a raw material, and a thin plate is joined to the removed portion.
Lead frame material described.
ング、プレス等公知の手段で薄肉インナーリード部を有
するリードフレームに成形し、ダイパッドに搭載した半
導体素子と、前記薄肉インナーリードを細線で連結した
構成体を樹脂封止したことを特徴とする半導体装置。4. The lead frame material according to claim 1 is molded into a lead frame having a thin inner lead portion by a known means such as etching or pressing, and a semiconductor element mounted on a die pad and the thin inner lead are connected by a thin wire. A semiconductor device in which a structure is resin-sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4132717A JPH05326788A (en) | 1992-05-25 | 1992-05-25 | Lead frame material and semiconductor device provided therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4132717A JPH05326788A (en) | 1992-05-25 | 1992-05-25 | Lead frame material and semiconductor device provided therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05326788A true JPH05326788A (en) | 1993-12-10 |
Family
ID=15087935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4132717A Withdrawn JPH05326788A (en) | 1992-05-25 | 1992-05-25 | Lead frame material and semiconductor device provided therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05326788A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000349219A (en) * | 1999-06-03 | 2000-12-15 | Mitsubishi Electric Corp | Lead-out terminal, case for the same and power semiconductor device |
| US6501156B1 (en) | 1999-09-10 | 2002-12-31 | Matsushita Electric Industrial Co., Ltd. | Lead frame which includes a die pad, a support lead, and inner leads |
| US7102216B1 (en) * | 2001-08-17 | 2006-09-05 | Amkor Technology, Inc. | Semiconductor package and leadframe with horizontal leads spaced in the vertical direction and method of making |
| JP2008034830A (en) * | 2006-06-27 | 2008-02-14 | Seiko Instruments Inc | Semiconductor device, and lead frame and its manufacturing method |
| JP2017028333A (en) * | 1999-06-30 | 2017-02-02 | ルネサスエレクトロニクス株式会社 | Semiconductor device manufacturing method |
-
1992
- 1992-05-25 JP JP4132717A patent/JPH05326788A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000349219A (en) * | 1999-06-03 | 2000-12-15 | Mitsubishi Electric Corp | Lead-out terminal, case for the same and power semiconductor device |
| JP2017028333A (en) * | 1999-06-30 | 2017-02-02 | ルネサスエレクトロニクス株式会社 | Semiconductor device manufacturing method |
| US6501156B1 (en) | 1999-09-10 | 2002-12-31 | Matsushita Electric Industrial Co., Ltd. | Lead frame which includes a die pad, a support lead, and inner leads |
| US7102216B1 (en) * | 2001-08-17 | 2006-09-05 | Amkor Technology, Inc. | Semiconductor package and leadframe with horizontal leads spaced in the vertical direction and method of making |
| JP2008034830A (en) * | 2006-06-27 | 2008-02-14 | Seiko Instruments Inc | Semiconductor device, and lead frame and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2951308B1 (en) | Lead frame manufacturing method | |
| KR960003853B1 (en) | Semiconductor device and its manufacturing process | |
| JP3339173B2 (en) | Lead frame, method of manufacturing the same, and semiconductor device using the same | |
| JPH05326788A (en) | Lead frame material and semiconductor device provided therewith | |
| US5989474A (en) | Method for fabricating resin-sealed semiconductor device using leadframe provided with resin dam bar | |
| JP2526846B2 (en) | Lead cutting method for resin-sealed semiconductor device | |
| JPH03296254A (en) | Lead frame | |
| US4592131A (en) | Method for manufacturing resin-sealed semiconductor device | |
| JPH08318328A (en) | Die for cutting lead | |
| JPH04134852A (en) | Lead frame | |
| JPH05114680A (en) | Manufacture of lead frame | |
| JP2524645B2 (en) | Lead frame and manufacturing method thereof | |
| JPH0766350A (en) | Lead frame for semiconductor device | |
| JP2818369B2 (en) | Lead frame for resin-sealed semiconductor device | |
| JPH06188350A (en) | Semiconductor device and lead frame | |
| JPH0689960A (en) | Lead frame for semiconductor element | |
| JPH04162466A (en) | Lead frame for semiconductor device | |
| JP2509882B2 (en) | Method for manufacturing semiconductor device | |
| JPH06151681A (en) | Manufacture of semiconductor device and lead frame used therein | |
| JPH0236557A (en) | Lead frame and semiconductor device using same | |
| KR200160429Y1 (en) | Metal mold for chamfering leadframe pad | |
| JPH05175400A (en) | Composite lead frame | |
| JPH04284651A (en) | Ceramic package | |
| JPH1012802A (en) | Lead frame and semiconductor device using the same | |
| JPH08264702A (en) | Lead frame of semiconductor device and semiconductor device using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990803 |