JPH05291126A - Semiconductor substrate coating equipment - Google Patents

Semiconductor substrate coating equipment

Info

Publication number
JPH05291126A
JPH05291126A JP8373592A JP8373592A JPH05291126A JP H05291126 A JPH05291126 A JP H05291126A JP 8373592 A JP8373592 A JP 8373592A JP 8373592 A JP8373592 A JP 8373592A JP H05291126 A JPH05291126 A JP H05291126A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
cup
wafer
diameter
skirt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8373592A
Other languages
Japanese (ja)
Inventor
Mitsuo Sato
満雄 佐藤
Nobuhito Nunotani
伸仁 布谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8373592A priority Critical patent/JPH05291126A/en
Publication of JPH05291126A publication Critical patent/JPH05291126A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a uniform photo resist coating film by using low exhaust pressure. CONSTITUTION:A hollow cylinder 103 whose diameter is smaller than a semiconductor substrate 102 is arranged just above the semiconductor substrate 102 and serves as a suction inlet. A skirt 105 is arranged below the semiconductor substrate 102, which skirt expands its diameter toward exhaust vents 107a, 107b, and has the diameter larger than the semiconductor substrate 102.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は回転塗布式により半導体
基板上にホトレジスト液を塗布する半導体基板塗布装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate coating apparatus for coating a photoresist liquid on a semiconductor substrate by a spin coating method.

【0002】[0002]

【従来の技術】従来の半導体基板塗布装置について図3
を参照して述べる。
2. Description of the Related Art A conventional semiconductor substrate coating apparatus is shown in FIG.
Will be described with reference to.

【0003】同図において、1は上部が開口され底部5
に排気口6a,6bが形成された円筒形のカップであ
る。2は半導体基板(以下、ウェーハと称す)であり、
このウェーハ2は、カップ1内において、底部5の中央
部を挿通し、回転駆動するスピンナ7上に吸着されてい
る。そして、ウェーハ2の直上には塗布液を滴下するノ
ズル3が配設され、ウェーハ2の周りにはノズル3に向
かって縮径する反射板4が装着されている。また、排気
口6a,6bはパイプ9a,9bを介して排気装置(図
示せず)に連結した廃液箱8に接続され、カップ1の底
部5にはスピンナ7を囲み、塗布廃液が外部へ流出する
のを防止する円筒形の液止めガイド10が突設されてい
る。
In the figure, reference numeral 1 denotes an opening at the top and a bottom 5
It is a cylindrical cup in which exhaust ports 6a and 6b are formed. 2 is a semiconductor substrate (hereinafter referred to as a wafer),
In the cup 1, the wafer 2 is inserted through the central portion of the bottom portion 5 and is adsorbed on the spinner 7 which is rotationally driven. A nozzle 3 for dropping the coating liquid is arranged directly above the wafer 2, and a reflection plate 4 having a diameter reduced toward the nozzle 3 is mounted around the wafer 2. Further, the exhaust ports 6a, 6b are connected to a waste liquid box 8 connected to an exhaust device (not shown) via pipes 9a, 9b, the spinner 7 is surrounded by the bottom portion 5 of the cup 1, and the coating waste liquid flows out to the outside. A cylindrical liquid stop guide 10 is provided so as to prevent the liquid from coming off.

【0004】かかる構成の半導体基板塗布装置では、ノ
ズル3から塗布液(ホトレジスト液)がウェーハ2上に
滴下され、排気装置が作動してカップ1の上部開口部か
ら気体が吸い込まれる。そして、スピンナ7の回転によ
りウェーハ2の表面から飛散したレジストは、反射板4
により下方に導かれ、気流Aに伴って排気口6a,6
b、パイプ9a,9bを順に通過して廃液箱8に導入さ
れていた。
In the semiconductor substrate coating apparatus having such a structure, the coating liquid (photoresist liquid) is dropped from the nozzle 3 onto the wafer 2, and the exhaust device is operated to suck the gas from the upper opening of the cup 1. The resist scattered from the surface of the wafer 2 by the rotation of the spinner 7 is reflected by the reflection plate 4
Is guided downward by the air flow A and the exhaust ports 6a, 6
b, and was introduced into the waste liquid box 8 through the pipes 9a and 9b in order.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上述し
た従来の半導体基板塗布装置においては、ウェーハ2の
下方に気流の渦が発生するため、ミストが生じ、ウェー
ハ表面に形成された塗膜にホトレジストの微粒が付着す
ると共に、ホトレジストのはね返りが生じ、加えてホト
レジスト塗膜の膜厚に10%以上のバラツキが生じる。
このため、微細なパターン形成が困難となり、歩留りが
低下するという問題点があった。
However, in the above-mentioned conventional semiconductor substrate coating apparatus, since the vortex of the air flow is generated below the wafer 2, a mist is generated, and the photoresist formed on the coating film formed on the wafer surface is covered with the photoresist. Along with the adhesion of fine particles, the photoresist is repelled, and in addition, the thickness of the photoresist coating film varies by 10% or more.
Therefore, there is a problem that it becomes difficult to form a fine pattern and the yield decreases.

【0006】また、カップ1の開口部が広いため、排気
圧を高くしなければならず、コスト高になるという問題
点があった。
Further, since the opening of the cup 1 is wide, it is necessary to increase the exhaust pressure, resulting in a high cost.

【0007】本発明の目的は、上述した問題点に鑑み、
一様なホトレジスト塗膜が低い排気圧により形成できる
半導体基板塗布装置を提供するものである。
The object of the present invention is to solve the above-mentioned problems.
A semiconductor substrate coating apparatus capable of forming a uniform photoresist coating film with a low exhaust pressure.

【0008】[0008]

【課題を解決するための手段】本発明は上述した目的を
達成するため、上部が開放され底部に排気口が形成され
たカップ内に回転駆動するスピンナが設けられ、前記ス
ピンナ上に塗布液が塗布される半導体基板が吸着され、
前記半導体基板の周りに前記カップの開放部に向かって
縮径し余剰塗布液を下方へ導く反射板が装着された半導
体基板塗布装置において、前記半導体基板の直上に吸気
口となる前記半導体基板より小さな径の中空円筒が設け
られ、前記半導体基板の下方に前記排気口に向かって拡
径する前記半導体基板より大きな径のスカートを設けた
ものである。
In order to achieve the above-mentioned object, the present invention is provided with a spinner which is rotatably driven in a cup having an open top and an exhaust port at the bottom, and a coating solution is applied onto the spinner. The semiconductor substrate to be coated is adsorbed,
In a semiconductor substrate coating apparatus in which a reflecting plate that is reduced in diameter toward the open portion of the cup and guides the excess coating liquid downward is mounted around the semiconductor substrate, the semiconductor substrate serving as an intake port is directly above the semiconductor substrate. A hollow cylinder having a small diameter is provided, and a skirt having a diameter larger than that of the semiconductor substrate and expanding toward the exhaust port is provided below the semiconductor substrate.

【0009】[0009]

【作用】本発明においては、半導体基板の下方に排気口
に向かって拡径する半導体基板より大きな径のスカート
を設けたので、気流はスカートによりスム−ズに案内さ
れ排気口に導入される。よって、カップ内に気流の渦が
発生するなどの乱れがなくなる。
According to the present invention, since the skirt having a diameter larger than that of the semiconductor substrate is provided below the semiconductor substrate toward the exhaust port, the air flow is smoothly guided by the skirt and introduced into the exhaust port. Therefore, turbulence such as generation of vortex of the air flow in the cup is eliminated.

【0010】また、半導体基板の直上に半導体基板より
小さな径の中空円筒を設けたので、吸気口が小さくな
り、排気圧の低下が可能となる。
Further, since the hollow cylinder having a diameter smaller than that of the semiconductor substrate is provided immediately above the semiconductor substrate, the intake port becomes smaller and the exhaust pressure can be reduced.

【0011】[0011]

【実施例】以下、本発明の半導体基板塗布装置に係わる
一実施例を図1及び図2に基づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the semiconductor substrate coating apparatus of the present invention will be described below with reference to FIGS.

【0012】即ち、半導体基板塗布装置は、上部が開放
され底部110に一対の排気口107a,107bが形
成された円筒形のカップ106内に、その底部110の
中央部を挿通し、且つ回転駆動するスピンナ101が内
設され、このスピンナ101上にウェーハ102が吸着
されている。スピンナ101の側面はカップ106の底
部110に突設された円筒形の液止めガイド112によ
り囲まれ、前記ウェーハ102の真上には若干の間隔、
例えば4mm前後を設けてウェーハ102より小さい径の
中空円筒103が同心円状に配設されている。さらに、
ウェーハ102の周りにあって中空円筒103に向かっ
て縮径し飛散した余剰の塗布液(ホトレジスト液)を下
へ落すための反射板104が中空円筒103の周面に固
着されている。また、ウェーハ102より下側には反射
板104との間に若干の隙間を設け排気口107a,1
07bに向かって拡径するウェーハ102より大きな径
のスカート105が液止めガイド112に周設されてい
る。また、前記排気口107a,107bにはパイプ1
11a,111b、廃液箱108が順に接続され、廃液
箱108には排気装置(図示せず)からのパイプ113
が接続されている。さらに、前記中空円筒103の直上
にはホトレジスト液をウェーハ102上に滴下するノズ
ル109が配設されている。
That is, in the semiconductor substrate coating apparatus, the central portion of the bottom portion 110 is inserted into a cylindrical cup 106 having an opening at the top and a pair of exhaust ports 107a and 107b formed at the bottom portion 110, and is driven to rotate. The spinner 101 is installed inside, and the wafer 102 is adsorbed onto the spinner 101. The side surface of the spinner 101 is surrounded by a cylindrical liquid stop guide 112 projecting from the bottom 110 of the cup 106, and there is a slight gap just above the wafer 102.
For example, a hollow cylinder 103 having a diameter smaller than that of the wafer 102 is provided in a concentric manner by providing about 4 mm. further,
A reflection plate 104 around the wafer 102 for dropping the excess coating liquid (photoresist liquid) that is reduced in diameter toward the hollow cylinder 103 and scattered is fixed to the peripheral surface of the hollow cylinder 103. In addition, a slight gap is provided below the wafer 102 with respect to the reflection plate 104, and the exhaust ports 107a, 1a
A skirt 105 having a diameter larger than that of the wafer 102, which diameter increases toward 07b, is provided around the liquid stop guide 112. Further, the pipe 1 is installed in the exhaust ports 107a and 107b.
11a, 111b and a waste liquid box 108 are connected in order, and a pipe 113 from an exhaust device (not shown) is connected to the waste liquid box 108.
Are connected. Further, directly above the hollow cylinder 103 is provided a nozzle 109 for dropping the photoresist solution onto the wafer 102.

【0013】かくして、かかる構成の半導体基板塗布装
置では、ノズル109よりホトレジスト液がウェーハ1
02上に滴下され、スピン塗布が開始すると、排気装置
が作動し、気体が中空円筒103よりウェーハ102上
を通過して反射板104とスカート105との間を一様
に流れ、排気口107a,107bに導入される。この
とき、気流Aに伴って余剰のホトレジスト液がミストや
はね返り液となって廃液箱108に集められる。
Thus, in the semiconductor substrate coating apparatus having such a structure, the photoresist liquid is supplied from the nozzle 109 to the wafer 1
When it is dropped on 02 and spin coating is started, the exhaust device is activated, and the gas passes from the hollow cylinder 103 onto the wafer 102 and flows evenly between the reflection plate 104 and the skirt 105, and the exhaust port 107a, It is introduced into 107b. At this time, the excess photoresist liquid becomes mist or splash liquid along with the air flow A and is collected in the waste liquid box 108.

【0014】従って、本実施例においては、気流がスカ
ート105によりスム−ズに案内され排気口107a,
107bに導入されるので、カップ106内の気流の乱
れがなくなる。また、吸気口が小さくなるので、排気圧
の低下が可能となる。
Therefore, in this embodiment, the air flow is smoothly guided by the skirt 105, and the exhaust ports 107a, 107a,
Since it is introduced into 107b, the turbulence of the air flow in the cup 106 is eliminated. Moreover, since the intake port becomes smaller, the exhaust pressure can be reduced.

【0015】[0015]

【発明の効果】以上説明したように本発明によれば、気
流はスカートによりスム−ズに案内され排気口に導入さ
れるので、カップ内の気流の乱れがなくなる。従って、
ミストの発生がなくなり、塗膜面へのホトレジスト微粒
の付着が防止できると共に、ホトレジストのはね返りが
防止できる。加えて、塗膜の膜厚のバラツキが5%以下
に低下するので、微細なパターン形成が容易にでき、歩
留りが向上できる。
As described above, according to the present invention, the air flow is guided by the skirt in a smooth manner and introduced into the exhaust port, so that the air flow in the cup is not disturbed. Therefore,
The generation of mist is eliminated, and it is possible to prevent the photoresist fine particles from adhering to the surface of the coating film, and also to prevent the photoresist from splashing. In addition, since the variation in the film thickness of the coating film is reduced to 5% or less, a fine pattern can be easily formed and the yield can be improved.

【0016】また、排気圧の低下が可能になるので、省
エネ及びコストダウンができる。
Further, since the exhaust pressure can be lowered, it is possible to save energy and reduce costs.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体基板塗布装置の断面図である。FIG. 1 is a sectional view of a semiconductor substrate coating apparatus of the present invention.

【図2】本発明の半導体基板塗布装置の平面図である。FIG. 2 is a plan view of a semiconductor substrate coating apparatus of the present invention.

【図3】従来の半導体基板塗布装置の断面図である。FIG. 3 is a sectional view of a conventional semiconductor substrate coating apparatus.

【符号の説明】[Explanation of symbols]

101 スピンナ 102 ウェーハ 103 中空円筒 104 反射板 105 スカート 106 カップ 107a,107b 排気口 108 廃液箱 109 ノズル 110 底部 111a,111b,113 パイプ 112 液止めガイド 101 Spinner 102 Wafer 103 Hollow Cylinder 104 Reflector 105 Skirt 106 Cup 107a, 107b Exhaust Port 108 Waste Liquid Box 109 Nozzle 110 Bottom 111a, 111b, 113 Pipe 112 Liquid Stop Guide

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 上部が開放され底部に排気口が形成され
たカップ内に回転駆動するスピンナが設けられ、前記ス
ピンナ上に塗布液が塗布される半導体基板が吸着され、
前記半導体基板の周りに前記カップの開放部に向かって
縮径し余剰塗布液を下方へ導く反射板が装着された半導
体基板塗布装置において、前記半導体基板の直上に吸気
口となる前記半導体基板より小さな径の中空円筒が設け
られ、前記半導体基板の下方に前記排気口に向かって拡
径する前記半導体基板より大きな径のスカートを設けた
ことを特徴とする半導体基板塗布装置。
1. A spinner which is rotationally driven is provided in a cup having an open top and an exhaust port formed at the bottom, and a semiconductor substrate to which a coating liquid is applied is adsorbed onto the spinner,
In a semiconductor substrate coating apparatus in which a reflecting plate that is reduced in diameter toward the open portion of the cup and guides the excess coating liquid downward is mounted around the semiconductor substrate, the semiconductor substrate serving as an intake port is directly above the semiconductor substrate. A semiconductor substrate coating apparatus, wherein a hollow cylinder having a small diameter is provided, and a skirt having a diameter larger than that of the semiconductor substrate, which is expanded toward the exhaust port, is provided below the semiconductor substrate.
JP8373592A 1992-04-06 1992-04-06 Semiconductor substrate coating equipment Pending JPH05291126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8373592A JPH05291126A (en) 1992-04-06 1992-04-06 Semiconductor substrate coating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8373592A JPH05291126A (en) 1992-04-06 1992-04-06 Semiconductor substrate coating equipment

Publications (1)

Publication Number Publication Date
JPH05291126A true JPH05291126A (en) 1993-11-05

Family

ID=13810790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8373592A Pending JPH05291126A (en) 1992-04-06 1992-04-06 Semiconductor substrate coating equipment

Country Status (1)

Country Link
JP (1) JPH05291126A (en)

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