JPH0528515B2 - - Google Patents
Info
- Publication number
- JPH0528515B2 JPH0528515B2 JP60164595A JP16459585A JPH0528515B2 JP H0528515 B2 JPH0528515 B2 JP H0528515B2 JP 60164595 A JP60164595 A JP 60164595A JP 16459585 A JP16459585 A JP 16459585A JP H0528515 B2 JPH0528515 B2 JP H0528515B2
- Authority
- JP
- Japan
- Prior art keywords
- cladding layer
- layer
- type
- semiconductor laser
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005253 cladding Methods 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16459585A JPS6223192A (ja) | 1985-07-23 | 1985-07-23 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16459585A JPS6223192A (ja) | 1985-07-23 | 1985-07-23 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6223192A JPS6223192A (ja) | 1987-01-31 |
| JPH0528515B2 true JPH0528515B2 (ko) | 1993-04-26 |
Family
ID=15796164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16459585A Granted JPS6223192A (ja) | 1985-07-23 | 1985-07-23 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6223192A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2447362A2 (en) | 2002-03-27 | 2012-05-02 | Kao Corporation | Alkaline cellulase variants |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189188A (ja) * | 1988-01-25 | 1989-07-28 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
| JP2561802Y2 (ja) * | 1990-05-29 | 1998-02-04 | 三洋電機株式会社 | 半導体レーザ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57103385A (en) * | 1980-12-18 | 1982-06-26 | Sharp Corp | Semiconductor laser element |
-
1985
- 1985-07-23 JP JP16459585A patent/JPS6223192A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57103385A (en) * | 1980-12-18 | 1982-06-26 | Sharp Corp | Semiconductor laser element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2447362A2 (en) | 2002-03-27 | 2012-05-02 | Kao Corporation | Alkaline cellulase variants |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223192A (ja) | 1987-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1093836A (zh) | 半导体激光器及其制作方法 | |
| EP0210616A2 (en) | Semiconductor laser | |
| US5163064A (en) | Laser diode array and manufacturing method thereof | |
| US5107514A (en) | Semiconductor optical element | |
| JP3024484B2 (ja) | 半導体発光素子 | |
| JPH0528515B2 (ko) | ||
| US6822989B1 (en) | Semiconductor laser and a manufacturing method for the same | |
| JPS61156788A (ja) | 半導体レ−ザ− | |
| US5572539A (en) | II-VI semiconductor laser with different guide layers | |
| US4581743A (en) | Semiconductor laser having an inverted layer in a stepped offset portion | |
| CN111937260B (zh) | 半导体激光器及其制造方法 | |
| US5022037A (en) | Semiconductor laser device | |
| US5345461A (en) | Semiconductor laser high optical gain quantum well | |
| JPS60225488A (ja) | 半導体レ−ザ− | |
| JPH0685390A (ja) | 半導体レーザの製造方法 | |
| JP2555984B2 (ja) | 半導体レーザおよびその製造方法 | |
| JP2536044B2 (ja) | 半導体レ−ザ装置 | |
| JPS60235484A (ja) | 半導体発光装置 | |
| KR100421335B1 (ko) | 레이저다이오드및그제조방법 | |
| JPS60213076A (ja) | 半導体レ−ザ | |
| JPH0159753B2 (ko) | ||
| JPH0239483A (ja) | 半導体レーザダイオードとその製造方法 | |
| JPH0582885A (ja) | 双安定半導体レーザ | |
| JPH03203282A (ja) | 半導体レーザダイオード | |
| JPS6035590A (ja) | プレ−ナ型半導体発光装置 |