JPH05283753A - Temperature controller - Google Patents
Temperature controllerInfo
- Publication number
- JPH05283753A JPH05283753A JP4082485A JP8248592A JPH05283753A JP H05283753 A JPH05283753 A JP H05283753A JP 4082485 A JP4082485 A JP 4082485A JP 8248592 A JP8248592 A JP 8248592A JP H05283753 A JPH05283753 A JP H05283753A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- temperature controller
- resistant porous
- type
- porous insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ペルチェ効果に基づい
て、電気エネルギを熱エネルギに変換する半導体素子チ
ップを有する熱電気変換モジュールに関し、特に、管内
を流れる流体の加熱冷却を行う温度調節器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric conversion module having a semiconductor element chip for converting electric energy into heat energy based on the Peltier effect, and more particularly to a temperature controller for heating and cooling a fluid flowing in a pipe. Regarding
【０００２】[0002]
【従来の技術】水道管内を流れる水道水、自動車用ラジ
エーター内を流れる冷却水、オイルクーラー内を流れる
エンジンオイル等、所定の管内を流れる流体の凍結は、
実生活上、大きな支障となり、特に、寒冷地においては
困った問題である。2. Description of the Related Art Freezing of a fluid flowing in a predetermined pipe, such as tap water flowing in a water pipe, cooling water flowing in an automobile radiator, engine oil flowing in an oil cooler, etc.
In actual life, it becomes a big obstacle, and it is a troublesome problem especially in cold regions.
【０００３】従来、冬期の水道水の凍結防止策として、
戸外の水道管にフレキシブルな、帯状ヒータ等を水道管
に螺旋状に巻き付け、電流を流し、ジュール熱を発生さ
せ、その発生熱を、管内の水に供給し、管内の水を凍結
させない様な方策が採られている。また、凍結後の解凍
策としては、熱湯を管の凍結部に直接かけたり、その他
の加熱体より熱を供給する事が一般的である。Conventionally, as a measure to prevent freezing of tap water in winter,
A flexible strip-shaped heater or the like is spirally wound around the water pipe outside the house, and an electric current is passed to generate Joule heat. Measures are taken. In addition, as a thawing measure after freezing, it is general to apply hot water directly to the freezing part of the tube or supply heat from another heating body.
【０００４】他方、ペルチェ効果に基づいてエネルギ変
換を行う半導体素子材チップを有する温度調節器が提案
されている。On the other hand, a temperature controller having a semiconductor element material chip that performs energy conversion based on the Peltier effect has been proposed.
【０００５】この半導体素子材チップに用いる半導体化
合物としては、Ｂi2Ｔe3系半導体化合物が最も優れた熱
電特性を示すものとして良く知られている。また、上記
半導体化合物単結晶材のＣ面内に結晶軸を持つ方位の熱
電特性が特に優れていることも知られている。As a semiconductor compound used for this semiconductor element material chip, a Bi2Te3 type semiconductor compound is well known as one showing the most excellent thermoelectric property. It is also known that the above-mentioned semiconductor compound single crystal material has particularly excellent thermoelectric properties in the orientation having a crystal axis in the C plane.
【０００６】しかしながら、この単結晶材は結晶構造
上、Ｃ面間の結合力が弱く、Ｃ面で剥離し易いという欠
陥を持っており、このために熱歪などによって破壊され
ることが多く、これが熱電特性の劣化を引き起こす原因
となっている。[0006] However, this single crystal material has a defect that the bonding force between C planes is weak due to its crystal structure and that it is easily peeled off at the C plane, so that it is often destroyed by thermal strain or the like, This causes deterioration of thermoelectric properties.
【０００７】また、その製造価格も溶製材および粉末プ
レス燒結材のそれよりも高く、それ故実用材として上記
単結晶材を熱電発電および冷却素子に使用することはこ
れまで非常に難しいと評価されており、現時点では多結
晶材、特に燒結材が最も優れた材料として使用されてい
る。Further, its manufacturing cost is also higher than that of the ingot material and the powder press-sintered material, and therefore, it has been evaluated that it is very difficult to use the above single crystal material as a practical material for thermoelectric power generation and cooling elements. Therefore, at present, a polycrystalline material, especially a sintered material is used as the most excellent material.
【０００８】次に、従来は適当に切り出された小さなＰ
型とＮ型の半導体素子材チップを多数個電気的に直列に
また熱的に並列に接合配列したものが熱電気変換モジュ
ールとして従来一般に用いられている。このような熱電
気変換モジュールを製造するに際しては、Ｐ型およびＮ
型の半導体素子材チップを交互に規則正しく配列固定す
る必要がある。また製造中には高熱側電極固定基板近傍
で空気の対流および輻射により多量の熱が発生する。Next, conventionally, a small P cut out appropriately
Conventionally used as a thermoelectric conversion module is one in which a large number of chips of N-type and N-type semiconductor element material are electrically connected in series and thermally connected in parallel. In manufacturing such a thermoelectric conversion module, a P type and an N type are used.
It is necessary to alternately and regularly fix the semiconductor element material chips of the mold. Further, during manufacturing, a large amount of heat is generated near the high temperature side electrode fixing substrate due to air convection and radiation.
【０００９】[0009]
【発明が解決しようとする課題】しかし、従来の帯状ヒ
ータは、比較的大型であり、また、熱歪等による機械的
強度に劣るという問題点がある。さらに、巻回の煩わし
さといった施設作業上の不具合がある。However, the conventional band-shaped heater has a problem that it is relatively large and has poor mechanical strength due to thermal strain or the like. Furthermore, there is a problem in facility work such as the troublesomeness of winding.
【００１０】他方、従来の温度調節器においては、使用
される半導体素子材チップは鋳塊または燒結塊を細かく
チップ状に切断したものであり、すなわち、具体的には
例えば燒結材チップの場合は溶解、凝固、粉砕、プレ
ス、燒結、熱処理、切断などの工程によって製造された
ものである。このため、製造工程が複雑であり、これが
製造コストの低減化を図る上での障害となっている。On the other hand, in the conventional temperature controller, the semiconductor element material chips used are finely cut ingots or sintered lumps, that is, specifically, in the case of sintered chips, for example. It is manufactured by processes such as melting, coagulation, crushing, pressing, sintering, heat treatment, and cutting. For this reason, the manufacturing process is complicated, which is an obstacle to reducing the manufacturing cost.
【００１１】また、従来の温度調節器の場合は、構造
上、高熱源側と低熱源側との温度差を有する。それ故、
半導体素子の両端に大きな熱歪みが掛かり、素子破壊の
原因となる熱電特性の劣化が生ずる。即ち、従来の温度
調節器は、高熱源側と低熱源側との先端間の距離が短く
て、熱供給方向について平板的な構造であり、半導体素
子対の両端での大きな温度差を確保するには本体の数十
倍の大きさの放熱板を低熱源側に取り付ける必要があ
り、温度調節器全体の構造が大型化することを免れな
い。またその製造工程において、Ｐ型およびＮ型の半導
体素子材チップを交互に規則正しく配列固定させる必要
があるため組立作業が複雑となり、自動組立化が困難で
あった。Further, in the case of the conventional temperature controller, the temperature difference between the high heat source side and the low heat source side is structurally present. Therefore,
Large thermal strain is applied to both ends of the semiconductor element, and the thermoelectric characteristics are degraded, which causes element destruction. That is, the conventional temperature controller has a short distance between the tips of the high heat source side and the low heat source side, has a flat plate structure in the heat supply direction, and secures a large temperature difference between both ends of the semiconductor element pair. It is necessary to attach a radiator plate that is several tens of times the size of the main body to the low heat source side, which inevitably increases the size of the entire temperature controller. Further, in the manufacturing process, it is necessary to alternately and regularly fix and fix the P-type and N-type semiconductor element material chips, so that the assembling work becomes complicated and the automatic assembling is difficult.
【００１２】本発明の課題は、従来の温度調節器の欠点
である機械的強度（熱歪みによる素子破壊や半田接合点
での剥離など）の弱さに対する補強を考慮した温度調節
器を提供することである。An object of the present invention is to provide a temperature controller in consideration of reinforcement against weakness of mechanical strength (element destruction due to thermal strain, peeling at a solder joint, etc.) which is a drawback of the conventional temperature controller. That is.
【００１３】本発明の他の課題は、単結晶材に類似した
一方向凝固チップ材であって、チップ切断工程などの省
略が可能で、それ故製造工程の合理化による製造価格の
低減化が可能な半導体素子材チップを用いた温度調節器
を提供することである。Another object of the present invention is a unidirectionally solidified chip material similar to a single crystal material, in which the chip cutting step and the like can be omitted, and therefore the manufacturing cost can be reduced by rationalizing the manufacturing process. Another object of the present invention is to provide a temperature controller using a semiconductor element material chip.
【００１４】本発明のさらに他の課題は、温度調節器の
製造工程において、製品の熱電特性を向上させるととも
に、組立作業性を改良して自動組立を可能とすることで
ある。Still another object of the present invention is to improve thermoelectric characteristics of a product in a manufacturing process of a temperature controller and improve assembly workability to enable automatic assembly.
【００１５】[0015]
【課題を解決するための手段】本発明によれば、複数の
孔部を備える第１の耐熱性多孔絶縁体と、該第１の耐熱
性多孔絶縁体の前記孔部に配設されるＮ型半導体素子材
チップと、前記第１の耐熱性多孔絶縁体に対向配設さ
れ、複数の孔部を備える第２の耐熱性多孔絶縁体と、該
第２の耐熱性多孔絶縁体の前記孔部に配設されるＰ型半
導体素子材チップとを有することを特徴とする温度調節
器が得られる。According to the present invention, there is provided a first heat-resistant porous insulator having a plurality of holes, and N provided in the holes of the first heat-resistant porous insulator. -Type semiconductor element material chip, a second heat-resistant porous insulator provided to face the first heat-resistant porous insulator and provided with a plurality of holes, and the holes of the second heat-resistant porous insulator A temperature controller having a P-type semiconductor element material chip disposed in the section is obtained.
【００１６】本発明によればまた、複数の孔部を備える
耐熱性多孔絶縁体と、前記孔部に交互に配設されるＮ型
およびＰ型半導体素子材チップとを有し、該Ｎ型および
該Ｐ型半導体素子材チップは互いに電気的に直列に接続
されていることを特徴とする温度調節器が得られる。According to the present invention, there is also provided a heat-resistant porous insulator having a plurality of holes and N-type and P-type semiconductor element material chips alternately arranged in the holes, the N-type A temperature controller is obtained in which the P-type semiconductor element material chips are electrically connected to each other in series.
【００１７】本発明によればさらに、前記Ｎ型および前
記Ｐ型半導体素子材チップは、一方向凝固されたもので
ある前記温度調節器が得られる。Further, according to the present invention, the temperature controller in which the N-type and P-type semiconductor element material chips are unidirectionally solidified can be obtained.
【００１８】[0018]
【作用】本発明によれば、従来のような複雑な工程を経
ることなく、優れた熱電特性を持った一方向凝固材チッ
プからなる半導体素子材チップを有する温度調節器を得
ることができる。According to the present invention, it is possible to obtain a temperature controller having a semiconductor element material chip made of a unidirectionally solidified material chip having excellent thermoelectric characteristics without going through a complicated process as in the prior art.
【００１９】また、前述のような耐熱性絶縁体の複数の
孔部にＮ、Ｐ、Ｎ、Ｐの順に半導体化合物を配設するな
どして作製した温度調節器によれば、各孔部の中に形成
される半導体化合物がこれらの孔部壁によって夫々保護
された状態となるため素子材の機械的強度に対する補強
が行える。Further, according to the temperature controller manufactured by, for example, disposing the semiconductor compound in the order of N, P, N, P in the plurality of holes of the heat resistant insulator as described above, Since the semiconductor compound formed therein is protected by the walls of these holes, the mechanical strength of the element material can be reinforced.
【００２０】[0020]
【実施例】以下、本発明の実施例による温度調節器を図
面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A temperature controller according to an embodiment of the present invention will be described below with reference to the drawings.
【００２１】実施例１ 図１は、実施例１による温度調節器を示す図である。図
１において、温度調節器１０は、非導電材から成る水道
管９に、結合管８および導電材から成る導電性筒３を介
して取付けられている。また、温度調節器１０は、導電
性筒３の径方向に対向するように取付けられたＮ型温度
調節モジュール１０ａおよびＰ型温度調節モジュール１
０ｂとを有する。First Embodiment FIG. 1 is a diagram showing a temperature controller according to the first embodiment. In FIG. 1, the temperature controller 10 is attached to a water pipe 9 made of a non-conductive material via a coupling pipe 8 and a conductive tube 3 made of a conductive material. Further, the temperature controller 10 includes an N-type temperature adjusting module 10 a and a P-type temperature adjusting module 1 which are attached so as to face each other in the radial direction of the conductive tube 3.
With 0b.
【００２２】図２（ａ）および（ｂ）は、Ｎ型温度調節
モジュール１０ａおよびＰ型温度調節モジュール１０ｂ
を示す。図２（ａ）において、Ｎ型温度調節モジュール
１０ａは、耐熱性多孔絶縁体２ａと、耐熱性多孔絶縁体
２ａの各孔部に固定されたＮ型半導体素子材チップ１ａ
と、耐熱性多孔絶縁体２ａに形成されたニッケルメッキ
膜５ａとを有する。また、図２（ｂ）において、Ｐ型温
度調節モジュール１０ｂは、耐熱性多孔絶縁体２ｂと、
耐熱性多孔絶縁体２ｂの各孔部に固定されたＰ型半導体
素子材チップ１ｂと、耐熱性多孔絶縁体２ｂに形成され
たニッケルメッキ膜５ｂとを有する。2A and 2B show an N-type temperature control module 10a and a P-type temperature control module 10b.
Indicates. In FIG. 2A, the N-type temperature control module 10a includes a heat-resistant porous insulator 2a and an N-type semiconductor element material chip 1a fixed in each hole of the heat-resistant porous insulator 2a.
And a nickel-plated film 5a formed on the heat-resistant porous insulator 2a. In addition, in FIG. 2B, the P-type temperature control module 10b includes a heat-resistant porous insulator 2b,
It has a P-type semiconductor element material chip 1b fixed to each hole of the heat resistant porous insulator 2b and a nickel plating film 5b formed on the heat resistant porous insulator 2b.
【００２３】Ｎ型温度調節モジュール１０ａおよびＰ型
温度調節モジュール１０ｂは、以下のようにして製造さ
れた。The N-type temperature control module 10a and the P-type temperature control module 10b were manufactured as follows.
【００２４】Ｂｉ2 Ｔｅ3 系化合物、即ち、Ｎ型温度
調節モジュール１０ａ用としてＮ型半導体化合物（Ｂｉ
2 Ｔｅ2.7 Ｓｅ0.3 ＋０．２wt％Ｓ）、また、Ｐ型温度
調節モジュール１０ｂとしてＰ型半導体化合物（Ｂｉ
0.5 Ｓｂ1.5 Ｔｅ3 ＋０．０５wt％Ｐｂ）を原料とし
て、それぞれ１kg秤量し、石英管中に真空封入し、高周
波炉で、溶解、凝固させてそれぞれ鋳塊を製造する。Bi 2 Te 3 based compound, that is, N type semiconductor compound (Bi 2 Te 3 compound for N type temperature control module 10a)
2 Te 2.7 Se 0.3 +0.2 wt% S), and a P-type semiconductor compound (Bi
0.5 Sb 1.5 Te 3 +0.05 wt% Pb) is used as a raw material, 1 kg of each is weighed, vacuum-sealed in a quartz tube, and melted and solidified in a high frequency furnace to produce ingots.
【００２５】得られた鋳塊をそれぞれ、耐熱性多孔絶
縁体２と共に石英坩堝の中に、挿入し、該鋳塊を溶解
し、孔部の深さの方向に温度勾配を持たせて、ゆっくり
凝固させる。Each of the obtained ingots was inserted into a quartz crucible together with the heat-resistant porous insulator 2, the ingots were melted, and a temperature gradient was given in the direction of the depth of the hole to slowly Solidify.
【００２６】真空中において、凝固点直下で、４８時
間処理する。The treatment is carried out in vacuum just below the freezing point for 48 hours.
【００２７】Ｎ型（Ｐ型）半導体素子材チップ１ａ（１
ｂ）の形状は、耐熱性多孔絶縁体２の孔部形によって決
定され、本実施例においては、１×１×８（mm）であ
る。又、これらのチップ材は、長手方向に、結晶Ｃ面
が、ほぼ平光に成長している単結晶又は、柱状晶である
事をＸ線解析により確めた。N-type (P-type) semiconductor element material chip 1a (1
The shape of b) is determined by the hole shape of the heat resistant porous insulator 2, and is 1 × 1 × 8 (mm) in this embodiment. In addition, it was confirmed by X-ray analysis that these chip materials were single crystals or columnar crystals in which the crystal C-plane was grown almost uniformly in the longitudinal direction.
【００２８】Ｎ型温度調節モジュール１０ａおよびＰ
型温度調節モジュール１０ｂの両面を滑らかに研磨し、
その表面にニッケルメッキ膜５を施す。N-type temperature control module 10a and P
Smoothly polish both sides of the mold temperature control module 10b,
A nickel plating film 5 is applied on the surface.
【００２９】以上のようにして、Ｎ型温度調節モジュー
ル１０ａおよびＰ型温度調節モジュール１０ｂが製造さ
れた。As described above, the N-type temperature control module 10a and the P-type temperature control module 10b were manufactured.
【００３０】次に、本温度調節器は、両モジュール間に
電圧を印加してＮ型温度調節モジュール１０ａからＰ型
温度調節モジュール１０ｂの方向へ直流電流を流すこと
により動作する。即ち、ペルチェ効果に基づいて導電性
筒３を加熱する。これにより、筒内および管内の氷は氷
解される。Next, the present temperature controller operates by applying a voltage between both modules and causing a direct current to flow from the N-type temperature adjustment module 10a to the P-type temperature adjustment module 10b. That is, the conductive tube 3 is heated based on the Peltier effect. As a result, the ice in the cylinder and the pipe is thawed.
【００３１】実施例２ 図３は、実施例２による温度調節器を示す図である。図
３において、温度調節器１１は、非導電材から成る水道
管９に結合管８および高熱伝導率材から成る熱伝達筒４
を介して取付けられている。Second Embodiment FIG. 3 is a diagram showing a temperature controller according to a second embodiment. In FIG. 3, the temperature controller 11 includes a water pipe 9 made of a non-conductive material, a coupling pipe 8 and a heat transfer tube 4 made of a material having high thermal conductivity.
Is installed through.
【００３２】図４は、実施例２による温度調節器１１の
詳細を示す図である。図４において、温度調節器１１
は、耐熱性多孔絶縁体２と、耐熱性多孔絶縁体２の各孔
部に交互に固定されたＮ型およびＰ型半導体素子材チッ
プ１ａ（１ｂ）と、半田接合され、隣り合う半導体素子
材チップを電気的に接続する金属セグメント７と、金属
セグメント７にメタライズ接合された絶縁板６とを有す
る。FIG. 4 is a diagram showing details of the temperature controller 11 according to the second embodiment. In FIG. 4, the temperature controller 11
Are solder-bonded to the heat-resistant porous insulator 2 and the N-type and P-type semiconductor element material chips 1a (1b) that are alternately fixed to the respective holes of the heat-resistant porous insulator 2 and are adjacent to each other. It has a metal segment 7 that electrically connects the chips, and an insulating plate 6 that is metalized and joined to the metal segment 7.
【００３３】次に、本温度調節器は、直列接続されたＮ
型およびＰ型半導体素子材チップ間に電圧を印加するこ
とにより、実施例１と同様に動作する。ただし、ペルチ
ェ効果に基づいて温度調節器自体が発熱し、この発生熱
により熱伝達筒４筒内および管内の氷を氷解するもので
ある。Next, the temperature controller has N connected in series.
By applying a voltage between the P-type and P-type semiconductor element material chips, the same operation as in Example 1 is performed. However, the temperature controller itself generates heat based on the Peltier effect, and the generated heat melts the ice inside the heat transfer cylinder 4 and inside the pipe.
【００３４】尚、実施例１および２において、印加する
電圧の極性を逆にすることにより、ペルチェ効果に基づ
いて管内の流体を冷却することができる。In the first and second embodiments, the fluid in the tube can be cooled based on the Peltier effect by reversing the polarity of the applied voltage.
【００３５】[0035]
【発明の効果】本発明による温度調節器は、Ｎ型および
Ｐ型半導体素子材チップがそれぞれ、耐熱性多孔絶縁体
に備えられた複数の孔部に配設されているため、比較的
機械強度が強く、熱歪みによる素子破壊や半田接合点で
の剥離などがない。In the temperature controller according to the present invention, since the N-type and P-type semiconductor element material chips are arranged in the plurality of holes provided in the heat-resistant porous insulator, the temperature controller has a relatively high mechanical strength. Is strong, and there is no element destruction due to thermal strain or peeling at the solder joint.
【００３６】また、従来のものに比べ、コンパクト、か
つ、施設作業が容易である。Further, as compared with the conventional one, it is compact and the facility work is easy.
【００３７】さらに、チップ切断工程などの省略が可能
で、それ故製造工程の合理化および自動組立を実現で
き、製造価格の低減化が可能である。Furthermore, it is possible to omit the chip cutting process and the like, and therefore, the manufacturing process can be rationalized and automatic assembly can be realized, and the manufacturing cost can be reduced.
【００３８】また、Ｎ型およびＰ型半導体素子材チップ
を、単結晶材に類似した一方向凝固されたものとすれ
ば、熱電特性を向上できる。If the N-type and P-type semiconductor element material chips are unidirectionally solidified like a single crystal material, thermoelectric characteristics can be improved.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の実施例１による温度調節器を示す図で
ある。FIG. 1 is a diagram showing a temperature controller according to a first embodiment of the present invention.
【図２】図１に示す温度調節器の詳細図である。FIG. 2 is a detailed view of the temperature controller shown in FIG.
【図３】本発明の実施例２による温度調節器を示す図で
ある。FIG. 3 is a diagram showing a temperature controller according to a second embodiment of the present invention.
【図４】図３に示す温度調節器の詳細図である。FIG. 4 is a detailed view of the temperature controller shown in FIG.
１ａ Ｎ型半導体素子材チップ １ｂ Ｐ型半導体素子材チップ ２ａ、２ｂ 耐熱性多孔絶縁体 ３ 導電性筒 ４ 熱伝達筒 ５ａ、５ｂ ニッケルメッキ膜 ６ 絶縁板 ７ 金属セグメント ８ 結合管 ９ 水道管 １０ 温度調節器 １０ａ Ｎ型温度調節モジュール １０ｂ Ｐ型温度調節モジュール １１ 温度調節器 1a N-type semiconductor element material chip 1b P-type semiconductor element material chip 2a, 2b Heat-resistant porous insulator 3 Conductive tube 4 Heat transfer tube 5a, 5b Nickel plating film 6 Insulation plate 7 Metal segment 8 Coupling pipe 9 Water pipe 10 Temperature Controller 10a N-type temperature control module 10b P-type temperature control module 11 Temperature controller
Claims (3)
縁体と、該第１の耐熱性多孔絶縁体の前記孔部に配設さ
れるＮ型半導体素子材チップと、前記第１の耐熱性多孔
絶縁体に対向配設され、複数の孔部を備える第２の耐熱
性多孔絶縁体と、該第２の耐熱性多孔絶縁体の前記孔部
に配設されるＰ型半導体素子材チップとを有することを
特徴とする温度調節器。1. A first heat-resistant porous insulator having a plurality of holes, an N-type semiconductor element material chip arranged in the holes of the first heat-resistant porous insulator, and the first heat-resistant porous insulator. Second heat-resistant porous insulator provided opposite to the heat-resistant porous insulator and having a plurality of holes, and a P-type semiconductor element provided in the hole of the second heat-resistant porous insulator A temperature controller having a material chip.
と、前記孔部に交互に配設されるＮ型およびＰ型半導体
素子材チップとを有し、該Ｎ型および該Ｐ型半導体素子
材チップは互いに電気的に直列に接続されていることを
特徴とする温度調節器。2. A heat-resistant porous insulator having a plurality of holes, and N-type and P-type semiconductor element material chips alternately arranged in the holes, wherein the N-type and P-type semiconductors are provided. A temperature controller, wherein the element material chips are electrically connected in series to each other.
ップは、一方向凝固されたものである請求請１または２
記載の温度調節器。3. The contract 1 or 2 wherein the N-type and P-type semiconductor element material chips are unidirectionally solidified.
The temperature controller described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4082485A JPH05283753A (en) | 1992-04-03 | 1992-04-03 | Temperature controller |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4082485A JPH05283753A (en) | 1992-04-03 | 1992-04-03 | Temperature controller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05283753A true JPH05283753A (en) | 1993-10-29 |
Family
ID=13775818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4082485A Withdrawn JPH05283753A (en) | 1992-04-03 | 1992-04-03 | Temperature controller |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05283753A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705434A (en) * | 1995-11-13 | 1998-01-06 | Ngk Insulators, Ltd. | Method of manufacturing thermoelectric conversion module |
| US5952728A (en) * | 1995-11-13 | 1999-09-14 | Ngk Insulators, Ltd. | Thermoelectric conversion module having channels filled with semiconducting material and insulating fillers |
| JP2014500618A (en) * | 2010-11-03 | 2014-01-09 | エミテック ゲゼルシヤフト フユア エミツシオンステクノロギー ミツト ベシユレンクテル ハフツング | Thermoelectric module for vehicle thermoelectric generator |
-
1992
- 1992-04-03 JP JP4082485A patent/JPH05283753A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705434A (en) * | 1995-11-13 | 1998-01-06 | Ngk Insulators, Ltd. | Method of manufacturing thermoelectric conversion module |
| US5952728A (en) * | 1995-11-13 | 1999-09-14 | Ngk Insulators, Ltd. | Thermoelectric conversion module having channels filled with semiconducting material and insulating fillers |
| DE19646905C2 (en) * | 1995-11-13 | 2003-01-30 | Ngk Insulators Ltd | Method of manufacturing a thermoelectric conversion module |
| DE19646915C2 (en) * | 1995-11-13 | 2003-05-28 | Nissan Motor | Thermoelectric conversion module and method of manufacturing the same |
| JP2014500618A (en) * | 2010-11-03 | 2014-01-09 | エミテック ゲゼルシヤフト フユア エミツシオンステクノロギー ミツト ベシユレンクテル ハフツング | Thermoelectric module for vehicle thermoelectric generator |
| US9318683B2 (en) | 2010-11-03 | 2016-04-19 | Emitec Gesellschaft Fuer Emissionstechnologie Mbh | Thermoelectric module for a thermoelectric generator of a vehicle and vehicle having thermoelectric modules |
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