JPH05152616A - Manufacture of chip of semiconductor element forming material and its thermoelectric conversion module - Google Patents

Abstract

PURPOSE:To rationalize the manufacturing process of chips of a semiconductor element forming material and to provide a thermoelectric conversion module which can reinforce the mechanical strength of the chips. CONSTITUTION:Chips of a semiconductor element forming material are manufactured by pouring a molten metal having the composition of an N- or P-type semiconductor compound in a plurality of holes 4a formed in a heat resistant insulating plate 4 by a high pressure or reduced pressure method and unidirectionally solidifying the molten metal. Then NP thermocouples are arranged electrically in series and thermally in parallel by forming the thermocouples in the holes 4a. After a semiconductor element fixing section is prepared by press-fitting semiconductor element chips in small holes of a semiconductor element fixing substrate 3 and a highand low-temperature heat source-side electrode fixing sections are prepared on an electrode insulating substrate by fixing electrodes to the substrate by a resist printing method, the high- and low- temperature heat source-side electrode fixing sections are put together with the semiconductor element fixing section in between so that P- and N-type semiconductor chips can be paired and, at the same time, the chips can be electrically connected in series.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device material chip, a thermoelectric conversion module and a method for manufacturing the same, and more particularly to the use of the Seepec and Peltier effect to convert thermal energy into electric energy or electric energy. Of semiconductor element material chips for converting heat into thermal energy, thermoelectric conversion of a generator, a temperature controller, a cooling device, etc. for converting energy between thermal energy and electric energy by using this type of semiconductor element material chip The present invention relates to improvement of module manufacturing technology.

[0002]

2. Description of the Related Art As a semiconductor compound used for the above-mentioned semiconductor element material chip, a Bi2Te3 based semiconductor compound is well known as one showing the most excellent thermoelectric characteristics. It is also known that the above-mentioned semiconductor compound single crystal material is also particularly excellent in thermoelectric characteristics in an orientation having a crystal axis in the C plane.

However, the single crystal material of
It has a defect that the bonding force between the C planes is weak and that it is easily peeled off at the C plane, and therefore it is often destroyed by thermal strain or the like, which causes deterioration of thermoelectric properties.

On the other hand, its manufacturing cost is also higher than that of the ingot material and the powder press-sintered material. Therefore, it is very difficult to use the single crystal material as a practical material for thermoelectric power generation and cooling elements. However, at present, a polycrystalline material, especially a sintered material is used as the most excellent material.

Next, conventionally, a small P cut out appropriately
Conventionally used as a thermoelectric conversion module is one in which a large number of chips of N-type and N-type semiconductor element material are electrically connected in series and thermally connected in parallel. In manufacturing such a heat transfer conversion module, it is necessary to alternately and regularly fix P-type and N-type semiconductor element material chips. Further, during manufacturing, a large amount of heat is generated near the high temperature side electrode fixing substrate due to air convection and radiation.

[0006]

However, the semiconductor element material chip used in the conventional thermoelectric conversion module is obtained by finely cutting an ingot or a sintered lump into chips, that is, for example, a sintered lump. In the case of the material chip, it is manufactured by a process such as melting, coagulation, crushing, pressing, sintering, heat treatment, and cutting. For this reason, the manufacturing process is complicated, which is an obstacle to reducing the manufacturing cost.

Further, in the case of the thermoelectric conversion module, even if a large amount of heat due to the convection and radiation of the air as described above moves from the high heat source side to the low heat source side during its manufacture, a sufficient measure for shutting it off is purchased. Since it was not twisted, a large thermal strain was applied to both ends of the semiconductor element, and the thermoelectric characteristics were generally insufficient as a product.

That is, as shown in FIG. 12, the conventional thermoelectric conversion module has a short distance between the tips of the high heat source side and the low heat source side and has a flat plate structure in the heat supply direction.
In order to obtain a large temperature difference between the two ends of the semiconductor element pair, it is necessary to attach a heat dissipation plate having a size of several tens of times the size of the main body to the low heat source side, which inevitably increases the size of the entire module structure. Further, since the manufacturing system requires that P-type and N-type semiconductor element material chips be alternately arranged and fixed in a regular manner, assembly workability is poor and automatic assembly is difficult.

The present invention is a unidirectionally solidified chip material similar to a single crystal material, in which the chip cutting process and the like can be omitted, and therefore the manufacturing cost can be reduced by rationalizing the manufacturing process. It aims at providing the manufacturing method of.

Further, a thermoelectric conversion module in consideration of reinforcement against weakness of mechanical strength (element destruction due to thermal strain, peeling at a solder joint, etc.) which is a defect of the semiconductor element material chip which is the unidirectionally solidified material. The purpose is to provide.

Further, it is an object of the present invention to improve thermoelectric characteristics of a product in manufacturing a thermoelectric conversion module and improve assembly workability of a manufacturing system to enable automatic assembly.

[0012]

A method for manufacturing a semiconductor element material chip according to the present invention is directed to a molten metal having an N-type or P-type semiconductor compound composition in different holes of a heat-resistant insulating plate having a plurality of holes. Is injected by a pressure or pressure reduction method, and is solidified by unidirectional solidification or the like.

Further, in the thermoelectric conversion module of the present invention, the semiconductor compound is N-containing in the holes of the heat-resistant insulating plate having a plurality of regularly arranged holes by the above method.
P, N, P are arranged in this order to form a thermocouple of NP, and they are electrically connected in series and thermally arranged in parallel.

Further, according to another heat conversion module of the present invention or its manufacturing method, each semiconductor element material chip is distributed and inserted into the small holes of the P-type and N-type semiconductor element fixing jigs each having a small hole at a predetermined position. , The semiconductor element fixing jigs are sequentially stacked on the semiconductor element fixing board having small holes in a predetermined matrix arrangement, and the semiconductor element material chips are press-fitted into the small holes of the semiconductor element fixing board from the small holes of each semiconductor element fixing jig. Prepare the element fixing part, and fix the electrode on the electrode insulating substrate by the resist printing method to prepare the high heat source side electrode fixing part and the low heat source side electrode fixing part, with the semiconductor element fixing part in the middle and the high heat source side electrode. The fixing portion and the low heat source side electrode fixing portion are superposed so that the P-type and N-semiconductor element material chips form a pair and are electrically connected in series.

[0015]

According to the above-described method for manufacturing a semiconductor device material chip, a semiconductor device material chip made of a unidirectionally solidified material chip having excellent thermoelectric properties can be obtained without going through a complicated process as in the past. it can.

Further, according to the thermoelectric conversion module manufactured by arranging semiconductor compounds in the order of N, P, N, P in a plurality of holes of the heat resistant insulating plate as described above, Since the semiconductor compound formed in the above state is protected by these holes, the mechanical strength of the element material can be reinforced.

Furthermore, by providing the thermoelectric conversion module with the semiconductor element fixing portion sandwiched between the high heat source side electrode fixing portion and the low heat source side electrode fixing portion as described above, the high heat source side electrode fixing portion is provided. Conduction of generated heat to the low heat source side electrode fixing part is blocked, and as a result, the thermoelectric characteristics of the product can be improved.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 schematically shows a manufacturing process of a semiconductor device material chip according to the present invention.
Examples of the manufacturing method will be described in detail below with reference to (e).

FIG. 2 (a) shows an apparatus and the like used in this manufacturing method, in which a weight pan 1, a crucible lid 2, a quartz crucible 3, and one or a plurality of holes 4a are formed. It is composed of a heat-resistant insulating plate 4, a semiconductor compound composition or a raw material 5 made of an ingot of this compound. And
As shown in FIG. 2 (b), the raw material 5, the heat-resistant insulating plate 4, the weight pan 1 and the like are inserted into the crucible 3 and sequentially placed,
The crucible lid 2 is placed on the crucible 3 for the purpose of both evaporation of the raw material 5 and a getter material.

The state in which these are set in a vacuum furnace and heated is shown in FIG. 2 (b). That is, in this case, the molten metal produced by completely heating and melting the raw material 5 is the holes 4 of the heat resistant insulating plate 4.
Enter into a. Then, in a state where the intrusion is completed, the temperature of the molten metal is gradually increased in the depth direction of the hole 4a, and slowly cooled over time. This makes the hole 4
In a, the crystal of the semiconductor compound grows along the depth direction, and a single crystal unidirectionally solidified material is produced.

Next, as shown in FIG. 2 (d), the heat-resistant insulating plate 4 in a state in which the solidified material is provided in the hole 4a from the crucible 3.
Then, the heat-resistant insulating plate 4 is subjected to a heat treatment for homogenizing the composition and producing a compound in a vacuum furnace or an atmosphere of an inert gas. If the product of this heat treatment is taken out from the hole 4a of the heat resistant insulating plate 4, the semiconductor element material chip 51 as shown in FIG. 2 (e) is obtained.

Then, the N-type thus manufactured,
P-type semiconductor element material chips 51 are sequentially arranged in the holes 41a of the heat-resistant insulating plate 41 having a plurality of holes 41a as shown in FIG. 3 (a), and as shown in FIG. 3 (b). A pair of N-type and P-type semiconductor element material chips 51 are solder-bonded via 6 to form a thermocouple, and a plurality of thermocouples thus produced are electrically connected in series and thermally in parallel. The thermoelectric conversion module is assembled by assembling. Further, both sides of the thermoelectric conversion module are sandwiched and fixed by heat-resistant insulating thin plates 7 as needed in order to prevent external obstacles due to electric leakage from the metal chip plate 6 made of a copper plate.

Next, a more specific example of the above manufacturing method will be described. That is, the well-known Bi2Te3 compound, P-type semiconductor compound Bi0.5Sb1.5Te3 + 0.05.
Weight% Pb, and N-type semiconductor compound Bi2 Te2.7 S
e 0.3 + 0.20% by weight of S as raw material, each of which is 1
Each Kg was weighed, vacuum-sealed in a quartz tube, and melted and solidified in a high-frequency furnace to obtain an ingot.

The ingots of the P-type and N-type semiconductor compounds obtained above were inserted into a crucible consisting of a quartz tube together with a heat-resistant insulating plate in the same manner as above, and the ingots were melted and heat-resistant. A temperature gradient was provided in the depth direction of the holes of the insulating plate to slowly solidify. Then, a semiconductor compound element material chip was produced by performing heat treatment in vacuum for 48 hours immediately below the freezing point. The shape of the obtained chip was determined by the hole shape of the heat resistant insulating plate, and in the case of this example, the cross section of 1 mm × 1 mm had a height of 5 mm. Further, by X-ray analysis, it was confirmed that this chip was a columnar crystal in which the crystal C planes were grown substantially parallel to the longitudinal direction.
The characteristics of these semiconductor compound chips are shown in Table 1.

[0025]

[Table 1]

The P-type and N-type semiconductor compound chips are alternately arranged in the holes of the heat-resistant insulating plate, and a pair of P-type and N-type semiconductor compound chips are solder-bonded to each other through a metal chip. The thermocouples thus formed were electrically connected in series and thermally in parallel, both sides were sandwiched by heat-resistant insulating thin plates, and fixed with silicone rubber to prepare a thermoelectric conversion module of the example.

Next, the method of the present invention for suppressing the influence of heat generation on the high heat source side on the low heat source side will be described. There are several methods for suppressing the influence of such heat generation. That is, in the first method of the present invention, the high heat source side and the low heat source side are shut off, and in the second method, the high heat source side and the low heat source side are additionally provided. It is intended to increase the distance between.

As described above, in the first example of the manufacturing method of the present invention for shutting off the high heat source side and the low heat source side, the first preparation step of preparing the semiconductor element fixing portion and the electrode It comprises a second preparation step of preparing the fixing portion and a third preparation step of assembling the semiconductor element fixing portion and the electrode fixing portion.

Among them, the first preparation step, that is, the preparation step of the semiconductor element fixing portion will be described with reference to FIGS. For this purpose, a P-type semiconductor element chip fixing jig 1 as shown in FIG. 4A and an N-type semiconductor element chip fixing jig 2 as shown in FIG. 4B are used. These fixing jigs 1,
2 each have a small hole at a predetermined position. Here, the "predetermined position" means that the small holes of the P-type semiconductor element chip fixing jig 1 and the small holes of the N-type semiconductor element chip fixing jig 2 alternate when both fixing jigs 1 and 2 are overlapped. Such a position. First, P-type and N-type semiconductor compound raw materials are melted and then unidirectionally solidified to obtain an ingot. Chips of a predetermined size are cut out from this ingot and distributed and inserted into the small holes of each fixing jig.

Further, a semiconductor element fixing substrate 3 as shown in FIG. 4 (C) is used. The semiconductor element fixing substrate 3 is formed with a matrix of small holes having dimensions and positions corresponding to the small holes of both fixing jigs 1 and 2. Such a semiconductor element fixing substrate 3 has, for example, a size of 40 mm × 40 mm × 1 mm, and a small hole of 2 mm × 2 mm 12 × 12.
Is used, that is, 144 pieces are formed.
The fixing jig 1 previously prepared on the semiconductor element fixing substrate 3,
The two are superposed, and the P-type module chip and the low heat source side type module chip are press-fitted from the small holes of the respective fixing jigs into the small holes of the semiconductor element fixing substrate 3 to complete the preparation of the semiconductor element fixing portion. Depending on the usage conditions,
The surface of the semiconductor element chip may be plated with an appropriate metal such as gold.

Here, the interval between the small holes formed in the semiconductor element fixing substrate 3 is 1 mm or less, which is difficult to process by the conventional mechanical processing technique. In order to solve this problem, in the present invention, it is preferable to prepare the semiconductor element fixing substrate 3 by the resist printing method used for manufacturing the C module. That is, as shown in FIG. 6, a suitable adhesive is applied on the insulating substrate and a thin metal plate such as a copper plate is bonded. Next, resist printing is applied to the entire area except the portion corresponding to the small hole into which the semiconductor element chip is press-fitted, and after drying, the small hole corresponding portion to which the resist ink is not applied is dug out by chemical corrosion. Next, an organic solvent such as acetone is used to peel off the thin metal plate having many small holes from the insulating substrate. Finally, the surface of the thin metal plate is subjected to insulation treatment, and this is used as a semiconductor element fixing substrate.

Next, the second preparatory step, that is, the preparatory step of the electrode fixing portion will be described with reference to FIGS. 7 and 8. This includes the high heat source side electrode fixing portion 4 as shown in FIG.
A process using resist printing as shown in FIG. 8 is used to obtain the low heat source side electrode fixing portion 5 as shown in FIG.

That is, as shown in FIG. 8, a suitable adhesive is applied on the electrode insulating substrate to bond a thin metal plate such as a copper plate. Next, resist printing is applied to the entire area except for the portion corresponding to the small hole to which the electrode is to be fixed, and after drying, the portion corresponding to the small hole to which the resist ink is not applied is dug out by chemical corrosion. Next, an organic solvent such as acetone is used to peel off a thin metal plate having a large number of small holes from the fixed substrate, and the electrode plate is joined and fixed to this by an oblique functional joining technique to form an electrode fixing portion. Such electrode fixing parts are prepared for the high heat power source side and the low heat power source side. For example, 40 mm x 40 mm
2mm on an alumina electrode insulating substrate with a dimension of 0.8mm
72 pieces of the same electrode of × 5 mm × 0.5 mm are joined.

Next, a third preparatory step for assembling the semiconductor element fixing portion and the electrode fixing portion thus prepared will be described with reference to FIG. At the time of this assembly, with the semiconductor element fixing portion in the middle, the high heat power source side electrode fixing portion and the low heat power source side electrode fixing portion form a pair of P-type and N-type semiconductor element chips and they are electrically connected in series. Stack as you would. In this state, a module is formed by soldering at once while heating under pressure.

When preparing the semiconductor element chip used in the first preparing step, it is desirable that the temperature gradient between the high heat source side and the low heat source side in the obtained product be large. .. For this purpose, the temperature gradient during the casting of the semiconductor element chip is adjusted. More specifically, the semiconductor compound raw material is heated and melted, the molten metal is injected into the small hole of the casting mold having the small hole of the same specifications as the small hole of the semiconductor element fixing jig, and the temperature gradient in the solidification direction between the casting mold and the molten metal. Hold and gradually solidify. This causes the crystals of the solidified body to grow almost in one direction. As the semiconductor compound raw material, it is preferable to use a Bi2Te3 system material containing elements of Group V and VI having a Tetraadymite type Rhombohedoral crystal structure. Table 2 shows the thermoelectric characteristics of the 80% Bi2 Te3 + 20% Sb2 Te3 (P-type semiconductor element material) obtained as described above.

[0036]

[Table 2]

FIG. 10 shows another example of the thermoelectric conversion module manufacturing method of the present invention, that is, a manufacturing method for increasing the distance between the high heat source side and the low heat source side in addition to the first method. In this manufacturing method, a thin metal plate or a thin rod is joined to one side of one heat-resistant insulating thin plate, and a P-type and N-type semiconductor element thick film is laminated on one side of each heat-resistant insulating thin plate. , These are stacked upside down, and the tips thereof are connected by a metal cormorant thin plate or thin rod conductor to form a semiconductor element pair, and these semiconductor elements are electrically stacked in series.

More specifically, in the step of preparing the semiconductor element material paste in this manufacturing method,
As shown in FIG. 11, an ingot obtained by weighing a rare amount of raw material and vacuum melting and growing it is heat-treated and then ground by a ball mill to prepare a hand raw material powder. A solvent is mixed with this raw material powder to form a paste. At this time, a sintering accelerator may be added if necessary.

As a concrete example, the thick film of the P-type semiconductor element is (Be0.5Sb1. + Te3 + 1.75W% tSe).
And the N-type semiconductor element thick film has a composition of (Bi1.8 Sb0.2
The composition is Te 2.85 + SbI 3). The heat treatment of the ingot is performed in an argon gas atmosphere at 548 to 408 ° C. for 48 hours for the P-type semiconductor element and at 488 to 473 ° C. for 48 hours for the N-type semiconductor element. The pulverization is performed until the particle size becomes about 1 to 2 μ. Obtained P
Coefficient of semiconductor type semiconductor element α is 195 μm / fixed portion, electric conductivity σ is 1.0 × 10 5 S / K, thermal conductivity κ
Is 2.45 × 10 -3 W ・ m fixed part, performance index Z is 2.9
It was 3 × 10 -3. Also, the N-type semiconductor element Zeepec coefficient α is −220 μm / fixed portion, and the electrical conductivity σ is 1.1 ×.
105 S / fixed part, thermal conductivity κ is 1.65 × 10 -3 W
The mK and the figure of merit Z were 2.93 × 10 -3.

Next, a pressure membrane module is manufactured using the semiconductor element raw material paste thus prepared.
A silver wax paste is applied to one side of the heat resistant insulating plate, and a thin metal plate is brought into pressure contact therewith. 85 in vacuum in this state
The thin metal plate is joined to the side surface of the insulating plate by heating at 0 ° C. for about 1 hour (oblique compound joining technique). After this joining, nickel plating is applied to the entire surface. Water glass thinly dissolved in a solvent is coated on the surface of the insulating thin plate thus treated to form a thin water glass film of about several μm on the surface and then dried.

On the insulating thin plate thus treated, the raw material paste prepared previously is laminated by the screen printing method to form the P-type and N-type semiconductor element thick films. After drying, both laminated substrates are stacked upside down, and heated in an inert gas atmosphere while applying pressure to bond the substrates and to sinter the laminated thick film at the same time. The P-type and N-type semiconductor element thick film pairs thus obtained are successively superposed and heated in an inert gas while being pressurized to bond the substrates and to sinter the laminated film at the same time. Obtain a thermoelectric conversion module.

[0042]

As described above, according to the present invention, it is possible to provide a thermoelectric conversion module capable of rationalizing the manufacturing process of semiconductor element material chips and reinforcing the mechanical strength of the semiconductor element material.

Further, since the final assembly step is carried out in the state where the semiconductor element chip is fixed in the small hole of the semiconductor element fixing substrate, the positional deviation of the semiconductor element chip does not occur during solder joining. That is, since the semiconductor element fixing portion can be handled as one part, the workability is very good, the work is simplified, and it is extremely suitable for automatic assembly.

Further, since the semiconductor element fixing portion is arranged between the high heat power source side electrode fixing portion and the low heat power source side electrode fixing portion, air convection and radiant heat generated from the high heat power source side electrode fixing portion are applied to the semiconductor element. It is blocked by the fixing part and does not reach the low heat power source side electrode fixing part. The blocking effect by the semiconductor element fixing portion acts to widen the temperature difference between the high heat power source side and the low heat power source side, and greatly improves the thermoelectric characteristics of the obtained thermoelectric conversion module.

[Brief description of drawings]

FIG. 1 is a schematic explanatory view of a method for manufacturing a semiconductor device material chip according to the present invention.

FIG. 2 is a specific explanatory view of a method for manufacturing a semiconductor element material chip according to the present invention.

FIG. 3 is an explanatory diagram of a thermoelectric conversion module configured using the semiconductor element material chip.

FIG. 4 is a plan view showing a jig or the like used in the first example of the manufacturing method of the present invention.

FIG. 5 is a process diagram showing a step of preparing a semiconductor element fixing portion in the manufacturing method.

FIG. 6 is a process drawing showing an example of a process for preparing a semiconductor element fixed substrate in the manufacturing method.

FIG. 7 is a plan view showing high heat source side and low heat source side electrode fixing portions.

FIG. 8 is a process chart showing a preparation process of an electrode fixing portion.

FIG. 9 is a process diagram showing an assembly process of the thermoelectric conversion module in the manufacturing method.

FIG. 10 is an explanatory view showing a second example of the manufacturing method of the present invention.

FIG. 11 is a process diagram showing a step of preparing a semiconductor element raw material paste in the manufacturing method.

FIG. 12 is a sectional side view showing the configuration of a conventional thermoelectric conversion module.

[Explanation of symbols]

 1 Weight Plate 2 Crucible Lid 3 Crucible 4,41 Heat Resistant Insulating Plate 4a, 41a Hole 5,51 Raw Material 6 Metal Chip Plate 7 Heat Resistant Insulating Thin Plate 11 P-type Semiconductor Device Fixing Jig 12 N-type Semiconductor Device Fixing Jig 13 Semiconductor element fixing substrate 14 High heat source side electrode fixing part 15 Low heat source side electrode fixing part

Claims (11)

[Claims] 1. A molten metal having an N-type or P-type semiconductor compound composition is injected into each of different holes of a heat-resistant insulating plate having a plurality of holes by a pressurizing or depressurizing method to solidify. A method for manufacturing a semiconductor device material chip. 2. The manufacturing method according to claim 1, wherein the molten metal injected into the holes of the heat-resistant insulating plate material is unidirectionally solidified. 3. A semiconductor according to claim 1 or 2 in the order of N, P, N, P ... In the holes of a heat-resistant insulating plate material having a plurality of regularly arranged holes. A thermoelectric conversion module, wherein a compound is disposed, a thermocouple of NP is formed, and the compounds are arranged electrically in series and thermally in parallel. 4. A high heat power source side electrode fixing portion (4) and a low heat power source side electrode fixing portion (5) sandwich a semiconductor element fixing portion therebetween, and P-type and N-type semiconductor element material chips form a pair, A thermoelectric conversion module, characterized in that they are superposed so that they are electrically coupled in series. 5. A metal thin plate or a thin rod is joined to one side of one heat-resistant insulating thin plate, and a P-type and N-type semiconductor element thick film is formed on one side of each of the heat-resistant insulating thin plates. They are stacked, and these are stacked upside down.The semiconductor elements of a pair of semiconductor elements formed by connecting the tips with metal cormorant thin plates or thin rod conductors are stacked in series in a vapor phase. The thermoelectric conversion module is characterized in that. 6. The semiconductor element material chips are distributed and inserted into the small holes of P-type and N-type semiconductor element fixing jigs (1, 2) having small holes at predetermined positions, and the small holes are provided in a predetermined matrix arrangement. The semiconductor element fixing jigs are sequentially stacked on the semiconductor element fixing board (3), and the semiconductor element material chips are pressed into the small holes of the semiconductor element fixing board from the small holes of each semiconductor element fixing jig to prepare the semiconductor element fixing portion. A high heat source side electrode fixing part (4) and a low heat source side electrode fixing part (5) are prepared by fixing the electrode on the electrode insulating substrate by a resist printing method, and the high heat power source side electrode with the semiconductor element fixing part in the middle. A thermoelectric conversion module, characterized in that the fixing portion and the low heat power source side electrode fixing portion are stacked so that the P-type and N-type semiconductor element material chips form a pair and are electrically coupled in series. Production method. 7. The method according to claim 6, wherein after the semiconductor element material chip is press-fitted into the small hole of the semiconductor element fixing substrate, the semiconductor element material chip is subjected to metal plating treatment. 8. The method according to claim 6, wherein the semiconductor element fixing substrate is formed by a resist printing method. 9. In the preparation of a semiconductor element material chip, a semiconductor compound raw material is heated and melted, and a molten metal is injected into a small hole of a casting mold having a small hole of the same specification as a small hole of a semiconductor element fixing jig to form a casting mold. The manufacturing method according to claim 6, wherein the molten metal is gradually solidified with a temperature gradient in the solidifying direction. 10. Tetraadymite as a semiconductor compound raw material
10. The method according to claim 9, wherein a Bi2Te3 system containing elements of groups V and VI having a type Rhombohedoral crystal structure is used. 11. A thin metal plate or a thin rod is bonded to one thick side surface of two heat resistant insulating thin plates, and a P type and a low heat source side type semiconductor element thick film is attached to one side of each of the heat resistant insulating thin plates. It is possible to stack them upside down, stack them upside down, connect the tips with a metal cormorant thin plate or thin rod conductor to form a semiconductor element pair, and stack these semiconductor elements electrically in series. A method for manufacturing a characteristic thermoelectric conversion module.