JPH05283450A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH05283450A JPH05283450A JP7501792A JP7501792A JPH05283450A JP H05283450 A JPH05283450 A JP H05283450A JP 7501792 A JP7501792 A JP 7501792A JP 7501792 A JP7501792 A JP 7501792A JP H05283450 A JPH05283450 A JP H05283450A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- wafer
- sheet
- die
- protective sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、特に、IC表面に保護シートを貼り付けダイシ
ンク,ダイボンディングするという製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a protective sheet is attached to the surface of an IC and die sinking and die bonding are performed.
【0002】[0002]
【従来の技術】従来のダイシング,ダイボンディング
は、IC表面は特にカバー等で表面を保護するような製
造方法ではなかった。すなわち、半導体素子が形成され
たウエハーの裏面にシートを貼り付け、これをステージ
上に固定し、ブレードにてダイシングし、個々のチップ
に分離する。この後、シートからチップを1つづつ取り
はずしてパッケージにダイボンディングして半導体装置
を製造する方法が採用されていた。2. Description of the Related Art Conventional dicing and die bonding have not been a manufacturing method in which the IC surface is protected by a cover or the like. That is, a sheet is attached to the back surface of a wafer on which semiconductor elements are formed, fixed on a stage, and diced with a blade to separate into individual chips. Thereafter, a method of manufacturing a semiconductor device by removing chips one by one from a sheet and die-bonding to a package has been adopted.
【0003】[0003]
【発明が解決しようとする課題】上述した従来の製造方
法は、ダイシング,ダイボンディング時にチップ表面が
露出しているため、シリコン微粒子,塵埃等がチップ表
面に付着しやすい。特にCCD(電荷結合素子)やEP
ROMは塵埃等が付着すると、特性試験で不良となり歩
留り低下となるという欠点がある。In the conventional manufacturing method described above, since the chip surface is exposed during dicing and die bonding, silicon fine particles, dust and the like are easily attached to the chip surface. Especially CCD (charge coupled device) and EP
If the dust or the like adheres to the ROM, it has a defect that it becomes defective in the characteristic test and the yield decreases.
【0004】[0004]
【課題を解決するための手段】本発明の製造方法は、ダ
イシング,ダイボンディングの際、半導体素子の表面に
熱収縮性(あるいは、UV収縮性など)の保護シートを
接着材により貼り付け、ダイボンディング後加熱して保
護シートを除去するという製造工程を備えている。According to the manufacturing method of the present invention, at the time of dicing and die bonding, a heat-shrinkable (or UV-shrinkable) protective sheet is attached to the surface of a semiconductor element with an adhesive, The manufacturing process includes heating after bonding to remove the protective sheet.
【0005】[0005]
【実施例】次に本発明について図面を参照して説明す
る。The present invention will be described below with reference to the drawings.
【0006】図1は、本発明の製造方法の各製造工程に
おけるウエハーまたはチップの断面図である。FIG. 1 is a sectional view of a wafer or a chip in each manufacturing step of the manufacturing method of the present invention.
【0007】まず、従来と同様にして拡散工程等を経て
半導体素子が形成されたウエハー1の裏面にシート(図
示省略)を貼り付ける(図1(A))。次いで、図1
(B)に示すように、接続剤4によりウエハー表面に熱
収縮性の保護シート3を貼り付ける。このウエハー表面
に貼り付ける保護シートは、透明で、熱収縮性があり、
かつ、接着剤が付着する材料であればどのようなもので
もよい。本実施例では、リンテック社からD705の商
品名で販売されているシートを用いた。First, a sheet (not shown) is attached to the back surface of the wafer 1 on which semiconductor elements are formed through a diffusion process and the like in the conventional manner (FIG. 1A). Then, FIG.
As shown in (B), the heat-shrinkable protective sheet 3 is attached to the surface of the wafer by the connecting agent 4. The protective sheet attached to the wafer surface is transparent and has heat shrinkability,
In addition, any material may be used as long as the adhesive is attached. In this example, a sheet sold by Lintec under the trade name of D705 was used.
【0008】この後、従来と同様にしてダイシングによ
りチップ化し、図1(C)に示すように、各チップ2を
パッケージ(図示省略)にダイボンディングする。この
後、ダイボンディングされたチップ2をパッケージごと
加熱(この実施例では乾燥空気中で80℃で30分間加
熱した)すると、図1(D)に示すように、保護シート
3は収縮してめくれ上り、チップ表面から剥れる。最後
に、従来と同様にボンディング,パッケージの封止を行
うことで半導体装置が出来上る。Thereafter, the chips are formed by dicing in the same manner as in the prior art, and each chip 2 is die-bonded to a package (not shown) as shown in FIG. 1 (C). After that, when the die-bonded chip 2 is heated together with the package (in this embodiment, heated in dry air at 80 ° C. for 30 minutes), the protective sheet 3 shrinks and turns over as shown in FIG. It rises and peels from the chip surface. Finally, the semiconductor device is completed by performing bonding and sealing the package as in the conventional case.
【0009】[0009]
【発明の効果】以上説明したように本発明は、チップの
表面に接着材を施した保護シートを貼り付けることによ
り、ダイシング,ダイボンディング時のシリコンの微粒
子,塵埃等が半導体素子面に付着することを防ぎ、品質
を向上させるという効果を有する。また、保護シートに
熱収縮性(あるいは、UV収縮性)の材質を用いている
ので保護シートの脱着が簡単にできる。As described above, according to the present invention, by sticking a protective sheet provided with an adhesive on the surface of a chip, silicon particles, dust and the like during dicing and die bonding adhere to the semiconductor element surface. This has the effect of preventing this and improving the quality. Further, since the heat-shrinkable (or UV-shrinkable) material is used for the protective sheet, the protective sheet can be easily attached and detached.
【図1】本発明の製造方法の各製造工程毎のウエハーま
たはチップの断面を示す図でる。FIG. 1 is a view showing a cross section of a wafer or a chip in each manufacturing step of the manufacturing method of the present invention.
1 ウエハー 2 チップ 3 保護シート 4 接着材 1 Wafer 2 Chip 3 Protective sheet 4 Adhesive
Claims (1)
シングによりチップ化し、前記チップをパッケージにダ
イボンディングして半導体装置を製造する方法におい
て、前記ウエハーの表面に熱収縮性保護シートを貼り付
ける工程と、前記保護シートが付着したウエハーを保護
シートごとダイシングする工程と、ダイシングにより得
られた保護シート付チップをパッケージにダイボンディ
ングする工程と、ダイボンディングされた前記チップを
加熱して前記保護シートを前記チップ表面から除去する
工程とを備えたことを特徴とする半導体装置の製造方
法。1. A method of manufacturing a semiconductor device by dicing a wafer on which semiconductor elements are formed by dicing, and die-bonding the chip to a package to attach a heat-shrinkable protective sheet to the surface of the wafer. , A step of dicing the protective sheet-attached wafer together with the protective sheet, a step of die-bonding a chip with a protective sheet obtained by dicing to a package, and heating the die-bonded chip to form the protective sheet. And a step of removing from the chip surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7501792A JPH05283450A (en) | 1992-03-31 | 1992-03-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7501792A JPH05283450A (en) | 1992-03-31 | 1992-03-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05283450A true JPH05283450A (en) | 1993-10-29 |
Family
ID=13563996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7501792A Withdrawn JPH05283450A (en) | 1992-03-31 | 1992-03-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05283450A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100373565C (en) * | 2005-04-29 | 2008-03-05 | 中国振华集团风光电工厂 | Movable particle adsorbing method for hybrid integrated circuit |
US7838331B2 (en) | 2005-11-16 | 2010-11-23 | Denso Corporation | Method for dicing semiconductor substrate |
-
1992
- 1992-03-31 JP JP7501792A patent/JPH05283450A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100373565C (en) * | 2005-04-29 | 2008-03-05 | 中国振华集团风光电工厂 | Movable particle adsorbing method for hybrid integrated circuit |
US7838331B2 (en) | 2005-11-16 | 2010-11-23 | Denso Corporation | Method for dicing semiconductor substrate |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990608 |