JPH0527490Y2 - - Google Patents
Info
- Publication number
- JPH0527490Y2 JPH0527490Y2 JP1987192485U JP19248587U JPH0527490Y2 JP H0527490 Y2 JPH0527490 Y2 JP H0527490Y2 JP 1987192485 U JP1987192485 U JP 1987192485U JP 19248587 U JP19248587 U JP 19248587U JP H0527490 Y2 JPH0527490 Y2 JP H0527490Y2
- Authority
- JP
- Japan
- Prior art keywords
- target
- gas
- substrate
- thin film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 40
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000005546 reactive sputtering Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 description 31
- 239000010409 thin film Substances 0.000 description 27
- 239000012495 reaction gas Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987192485U JPH0527490Y2 (it) | 1987-12-17 | 1987-12-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987192485U JPH0527490Y2 (it) | 1987-12-17 | 1987-12-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0198164U JPH0198164U (it) | 1989-06-30 |
| JPH0527490Y2 true JPH0527490Y2 (it) | 1993-07-13 |
Family
ID=31483342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987192485U Expired - Lifetime JPH0527490Y2 (it) | 1987-12-17 | 1987-12-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0527490Y2 (it) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114787A (en) * | 1977-03-18 | 1978-10-06 | Ulvac Corp | Target for high profitable sputtering apparatus |
| JPS58110673A (ja) * | 1981-12-23 | 1983-07-01 | Hitachi Ltd | 反応性スパツタリング装置 |
-
1987
- 1987-12-17 JP JP1987192485U patent/JPH0527490Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114787A (en) * | 1977-03-18 | 1978-10-06 | Ulvac Corp | Target for high profitable sputtering apparatus |
| JPS58110673A (ja) * | 1981-12-23 | 1983-07-01 | Hitachi Ltd | 反応性スパツタリング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0198164U (it) | 1989-06-30 |
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