JPH0527243B2 - - Google Patents

Info

Publication number
JPH0527243B2
JPH0527243B2 JP58209314A JP20931483A JPH0527243B2 JP H0527243 B2 JPH0527243 B2 JP H0527243B2 JP 58209314 A JP58209314 A JP 58209314A JP 20931483 A JP20931483 A JP 20931483A JP H0527243 B2 JPH0527243 B2 JP H0527243B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
diffusion
alloy layer
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58209314A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60101930A (ja
Inventor
Eiji Nagasawa
Hidekazu Okabayashi
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58209314A priority Critical patent/JPS60101930A/ja
Publication of JPS60101930A publication Critical patent/JPS60101930A/ja
Publication of JPH0527243B2 publication Critical patent/JPH0527243B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/1414
    • H10P32/171

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP58209314A 1983-11-08 1983-11-08 半導体への不純物拡散方法 Granted JPS60101930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58209314A JPS60101930A (ja) 1983-11-08 1983-11-08 半導体への不純物拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58209314A JPS60101930A (ja) 1983-11-08 1983-11-08 半導体への不純物拡散方法

Publications (2)

Publication Number Publication Date
JPS60101930A JPS60101930A (ja) 1985-06-06
JPH0527243B2 true JPH0527243B2 (en:Method) 1993-04-20

Family

ID=16570899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58209314A Granted JPS60101930A (ja) 1983-11-08 1983-11-08 半導体への不純物拡散方法

Country Status (1)

Country Link
JP (1) JPS60101930A (en:Method)

Also Published As

Publication number Publication date
JPS60101930A (ja) 1985-06-06

Similar Documents

Publication Publication Date Title
US4945070A (en) Method of making cmos with shallow source and drain junctions
CN100524654C (zh) 含有掺杂高-k侧壁隔片的场效应晶体管的漏极/源极延伸结构
JPH0523055B2 (en:Method)
US4279671A (en) Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition
EP0459398B1 (en) Manufacturing method of a channel in MOS semiconductor devices
JPH098135A (ja) 半導体装置の製造方法
JP2995059B2 (ja) 縦型バイポーラ・トランジスタの製造方法
US4653173A (en) Method of manufacturing an insulated gate field effect device
JPH0527243B2 (en:Method)
JPS6155250B2 (en:Method)
JPH0127589B2 (en:Method)
JP2809662B2 (ja) 二重拡散型mosfet装置の製造方法
JPH01220438A (ja) 半導体装置の製造方法
JPH06163576A (ja) 半導体装置の製造方法
JPS6156448A (ja) 相補型半導体装置の製造方法
JP2629162B2 (ja) 半導体装置及びその製造方法
JPS6180862A (ja) 半導体装置の製造方法
JPH0230145A (ja) 半導体装置の製造方法
JPH04360539A (ja) 半導体装置の製造方法
JPH0656835B2 (ja) 半導体への不純物拡散方法
JPS60198813A (ja) 半導体への不純物拡散法
JPH0226034A (ja) 半導体装置の製造方法
JPS60217667A (ja) 半導体装置の製造方法
JPH0555204A (ja) 半導体装置の製造方法
JPS61251164A (ja) Bi−MIS集積回路の製造方法