JPH05267452A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the scattering of the fragments by chipping, concerning the manufacture of a semiconductor device, which performs the dicing of a semiconductor wafer. CONSTITUTION:After dicing of a semiconductor wafer 11, a mask 16 for shielding a light between chips including the periphery of a chip 11a is positioned. And, chips 11a are picked up in the condition that the fragments generated at separation of the chips 11a are stuck to an UV tape 13 by applying an ultraviolet ray.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device for dicing a semiconductor wafer. 2. Description of the Related Art In recent years, a full-cut method has become mainstream in a semiconductor wafer tying process in a semiconductor device manufacturing process. In this case, it is necessary to prevent damages such as scratches caused by silicon pieces that occur when the chips are separated from the tape after dicing.

[0002]

2. Description of the Related Art FIG. 3 is a diagram showing a wafer in a conventional dicing process.

Conventionally, during the manufacturing process of a semiconductor device, there is a process in which a semiconductor wafer is subjected to predetermined processing and then diced into chips. In this case, as shown in FIG. 3, the semiconductor wafer 11 has the adhesive tape 13 attached to the frame 12.
Stuck on. The adhesive tape 13 is mainly a UV (ultraviolet) tape, and its adhesive strength is weakened by irradiating it with ultraviolet rays.

Therefore, FIG. 4 shows a conventional dicing process diagram. In FIG. 4, first, the semiconductor wafer 11 fixed on the adhesive tape 13 of the frame 12 is shown in FIG.
(A)), and each chip is diced by the rotating blade 14 (FIG. 4B). The full-cut method is mainly used for dicing, and is a method of cutting a part of the adhesive tape 13 to completely cut the semiconductor wafer 11 into chips (see FIG. 5A).

Therefore, ultraviolet rays are radiated from the back surface of the adhesive tape 13 and the adhesive tape 13 and the semiconductor wafer (chip 1).
The adhesive force with 1a) is weakened (FIG. 4 (C)). Then, although not shown, a pin or the like is inserted into the adhesive tape 13 to separate the chip.

[0006]

FIG. 5 is a diagram for explaining the conventional chip separation. As shown in FIG. 5 (A), after the chip 11a formed by full cutting to cut a part of the adhesive tape 13 is irradiated with ultraviolet rays,
As shown in FIG. 5B, when the adhesive tape 13 is separated, chipping or the like occurs on the back surface of the chip, and the silicon piece 1
5 occurs. There is a problem that the silicon pieces 15 scatter during the separation, causing scratches due to adhesion to the chip and causing an obstacle in assembly.

Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device which prevents scattering of fragments due to chipping.

[0008]

FIG. 1 shows the principle of the present invention. In FIG. 1, in a method of manufacturing a semiconductor device in which a semiconductor wafer is fixed on a pressure-sensitive adhesive tape of a frame and dicing is performed after a predetermined treatment, in a first step, the semiconductor on the pressure-sensitive adhesive tape of the frame is The wafer is diced in chip units. In the second step, a mask having a pattern for shielding light between the respective chips including the periphery of the chips is positioned on the opposite surface of the adhesive tape to which the chips are fixed.

In the third step, light is irradiated from the mask side to weaken the adhesive force between the adhesive tape and the chip at the light irradiation portion. Then, in the fourth step, the chips are separated from the adhesive tape in a state where the fragments generated from the chips are fixed to the portions of the adhesive tape that are shielded from light by the mask.

[0010]

As described above, after dicing the semiconductor wafer which has been subjected to the predetermined processing, the mask is positioned on the surface of the adhesive tape opposite to the chip fixing surface. The mask has a pattern in which light is shielded between the chips including the periphery of the chip, and light is emitted through the mask.

As a result, between the adhesive tape and the chip, the adhesive force is weakened in the portion irradiated with light through the mask, and the light shielded portion retains the adhesive force. That is,
The chip retains its adhesive force around its periphery, and the adhesive force is weakened inside the periphery. Therefore, when the chip is separated from the adhesive tape, if a crack or the like is generated in the peripheral portion of the chip, the fragments are separated while being fixed to the adhesive tape.

That is, it is possible to prevent scattering of fragments during separation, avoid assembly failure, and improve quality.

[0013]

FIG. 2 is a diagram for explaining the main manufacturing steps of one embodiment of the present invention. The same components as those in FIGS. 3 to 5 are designated by the same reference numerals.

After the predetermined processing of the semiconductor wafer, the process of fixing the semiconductor wafer 11 on the adhesive tape (UV tape) of the frame and performing full-cut dicing by the plate is the same as in FIG. In this case, dicing is performed in chip units along the scribe lines formed on the semiconductor wafer 11.

Therefore, as shown in FIGS. 2A and 2B, the mask 16 is positioned on the reflection surface of the UV tape 13 to which the chip 11a is fixed. The mask 16 is formed by forming a pattern (hatched portion) that shields light between the respective chips including the periphery of the respective chips 11a on the glass. For example, the light-shielding pattern is formed in a portion of about 50 to 500 μm inside the chip of the scribe line (dicing line).

Then, when ultraviolet rays are radiated from the mask 16 side, the UV tape 13 and the chip 11 are radiated in the radiated portion.
The adhesive force with a is weakened, and the film is easily peeled off.
Further, the adhesive force between the UV tape 13 and the chip 11a is maintained as it is in the portion of the mask 16 which is not irradiated with ultraviolet rays due to the light shielding pattern.

Therefore, as shown in FIG. 2C, when the chips 11a are separated from the UV tape 13, the chipped pieces 15 generated during dicing are separated from the chips 11a while being fixed to the UV tape 13. It

That is, the chip 11a chips (silicon fragments 15) and the like that occur during dicing are not
Since it occurs at the edge of the adhesive surface of a of the UV tape 13 to the UV tape 13, the chip 11a is separated at this portion while the fragment 15 is fixed to the UV tape 13, and scattering of the fragment 15 can be prevented. .

As a result, the chip 11a formed of the fragments 15 is formed.
It is possible to prevent scratches and the like from occurring, to eliminate a factor that causes an assembly failure, and to improve quality.

In the above embodiment, the mask 16 has a light-shielding pattern formed on glass. However, the mask 16 may have an opening for the ultraviolet light transmitting portion.

[0021]

As described above, according to the present invention, after the dicing of the semiconductor wafer, the mask is shielded from the light including the periphery of the chips to irradiate the light so that the debris generated at the time of the chip separation is applied to the adhesive tape. It becomes a fixed state, and it is possible to prevent the scattering of fragments and improve the quality.

[Brief description of drawings]

FIG. 1 is a diagram illustrating the principle of the present invention.

FIG. 2 is a diagram for explaining a main manufacturing process of one embodiment of the present invention.

FIG. 3 is a diagram showing a wafer in a conventional dicing process.

FIG. 4 is a diagram of a conventional dicing process.

FIG. 5 is a diagram for explaining conventional chip separation.

[Explanation of symbols]

 11 Semiconductor Wafer 11a Chip 12 Frame 13 Adhesive Tape (UV Tape) 15 Fragment 16 Mask

Claims (1)

[Claims] 1. After predetermined processing of a semiconductor wafer (11),
A method for manufacturing a semiconductor device in which the semiconductor wafer (11) is fixed on an adhesive tape (13) of a frame (12) and dicing is performed, wherein the semiconductor wafer (11) on the adhesive tape (13) of the frame (12) is ) Is diced on a chip (11a) unit basis, and between the chips including the periphery of the chip (11a) on the opposite surface of the adhesive tape (13) to which the chip (11a) is fixed. A step of arranging a mask (16) on which a light-shielding pattern is formed, and irradiating light from the mask (16) side so that the adhesive tape (13) and the chip (11a) in the light irradiation portion The step of weakening the adhesive strength, and the adhesive tape (13) with the debris (15) generated from the chip (11a) fixed to the portion shielded from light by the mask (16) A step of separating the chip (11a) from the tape (13);