JP2006332078A - Process for manufacturing semiconductor chip - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a process for manufacturing a semiconductor chip in which an adhesive film for die bonding can be stuck and split while preventing the occurrence of extrusion or burr on the rear surface of the semiconductor chip. <P>SOLUTION: The process for manufacturing a semiconductor chip comprises a step for forming a splitting groove 13 of predetermined depth from the surface of a semiconductor wafer 1 along a scribing lane, a step for sticking a protective tape 2 to the surface, a step for exposing the splitting groove 13 by grinding the rear surface of the semiconductor wafer 1 and splitting the semiconductor wafer 1 into individual semiconductor chips 8, a step for sticking a die bonding adhesive film 4 to the rear surface of the semiconductor chips 8 split individually, a step for sticking a dicing tape 6 to the surface side of the die bonding adhesive film 4 stuck to the rear surface of the semiconductor chips 8 and to a dicing frame 5, a step for stripping the protective tape 2 stuck to the surface of the semiconductor wafer 1, a step for irradiating the protective tape 2 stuck to the entire surface of the semiconductor wafer 1 with a UV light beam 7, and a step for removing a portion irradiated with the UV light beam 7 selectively along the splitting groove 13 of the adhesive film 4 with developer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention divides a semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes into individual semiconductor chips. The present invention relates to a method for manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface of the semiconductor chip.

  In a semiconductor device manufacturing process, a semiconductor integrated circuit such as an IC or LSI is formed in a plurality of regions partitioned by a scribe lane formed in a lattice shape on the surface of a semiconductor wafer, and each region where the circuit is formed is formed. Individual semiconductor chips are manufactured by dividing along the scribe lane. A dicing apparatus is generally used as a dividing apparatus for dividing a semiconductor wafer, and the dicing apparatus has a structure in which a semiconductor wafer is cut along a scribe lane with a cutting blade having a thickness of about 20 μm to 100 μm.

  The semiconductor chip thus divided is die bonded to, for example, a lead frame or an organic substrate, electrically bonded by wire bonding or the like, resin-sealed, and divided into individual semiconductor devices. Such semiconductor devices are widely used as electric devices such as cellular phones and home appliances, ID tags, IC cards, and the like.

  Each of the divided semiconductor chips has a die bonding adhesive film called a die attach film having a thickness of 20 μm to 40 μm formed of polyimide resin or the like on the back surface thereof, and leads the semiconductor chip through the adhesive film. Bonding is performed by heating to a frame or an organic substrate. As a method of attaching an adhesive film for die bonding to the back surface of a semiconductor chip, as represented by Patent Document 1, an adhesive film is attached to the back surface of a semiconductor wafer, and the semiconductor wafer is diced through the adhesive film. After being attached to the tape, a semiconductor chip having an adhesive film attached to the back surface is formed by cutting together with the adhesive film with a cutting blade along a scribe lane formed on the surface of the semiconductor wafer. When bonding the semiconductor chip to the lead frame or the organic substrate, the bonding operation is smoothly performed because the adhesive film is already mounted on the back surface of the semiconductor chip.

  In recent years, electric devices such as mobile phones have been required to be thinner and smaller, and since semiconductor chips are also used for IC cards and the like, thinner semiconductor chips are required. Furthermore, in the case of portable electric devices such as mobile phones, drop durability and pressing durability of semiconductor devices directly under the operation buttons are strongly required, and in the case of IC cards and the like, required quality for bending durability and the like. Is expensive.

In other words, a thinner / smaller and higher strength semiconductor chip is required.
As a semiconductor chip manufacturing technique that solves these requirements, a technique called a predicing method represented by Patent Document 2 has been put into practical use. This tip dicing method forms a split groove having a depth deeper than the finished thickness of the semiconductor chip along the scribe lane from the surface of the semiconductor wafer and shallower than the thickness of the semiconductor wafer before grinding. In this technique, the back surface of the formed semiconductor wafer is ground, and a dividing groove is exposed on the back surface to separate individual semiconductor chips. If this technique is used, it is possible to process the thickness of the semiconductor chip to 50 μm or less without causing problems such as cracking of the semiconductor wafer. Further, when a method of cutting and separating a thin wafer using a dicing process that is generally performed conventionally is used, chipping 9 is likely to occur on the back side of the semiconductor chip 8 as shown in FIG. The occurrence of 9 causes a significant deterioration in the bending strength and vibration drop strength of the semiconductor chip 8, but by using the above-mentioned dicing method, the chipping 9 on the back side of the semiconductor chip 8 can be eliminated. A thin semiconductor chip 8 having a high strength such as 50 μm or less can be easily manufactured.
Japanese Patent Laid-Open No. 11-219962 JP 2000-294522 A

  However, as in the example of Patent Document 1, an adhesive film is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is attached to the dicing tape via the adhesive film, and then the scribe lane formed on the surface of the semiconductor wafer is applied. In the method of forming a semiconductor chip with the adhesive film attached to the back surface by cutting along with the adhesive film along the cutting blade, as shown in FIG. 6, due to the heat generated during cutting and the rotational movement of the cutting blade, Then, the adhesive film 4 extends in the rotation direction of the cutting blade and protrudes from the semiconductor chip 8 or a flash 42 is generated on the adhesive film 4. The protrusions and flashes 42 of the adhesive film 4 adhere to the bonding pads in the subsequent packaging process, and cause problems such as non-bonding of wire bonding and fluidity deterioration of the sealing resin.

  In addition, when a semiconductor wafer is divided into individual semiconductor chips by a tip dicing method typified by Patent Document 2, a semiconductor wafer is formed after a dividing groove having a predetermined depth is formed along the scribe lane from the surface of the semiconductor wafer. Since the rear surface of the wafer is ground and the dividing grooves are exposed on the back surface, the adhesive film for die bonding cannot be mounted on the back surface of the semiconductor wafer in advance, and the semiconductor wafer and the adhesive film are simultaneously cut by the cutting blade. However, the adhesive film cannot be divided. Therefore, when bonding a semiconductor chip manufactured by the prior dicing method to a lead frame or an organic substrate, it must be performed while inserting a bonding agent between the semiconductor chip and the frame, and the bonding operation is performed smoothly. There is a problem that can not be.

  SUMMARY OF THE INVENTION The present invention solves the above problems, and a main object of the present invention is to generate an adhesive film for die bonding on the back surface of each semiconductor chip into which a semiconductor wafer is divided by pre-dicing, and to generate protrusions and flashes. It is an object of the present invention to provide a method for manufacturing a semiconductor chip that can be easily mounted.

  In order to solve the above problem, according to the present invention, there is provided a semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes. A method of manufacturing a semiconductor chip by dividing the semiconductor chip into individual semiconductor chips and mounting an adhesive film for die bonding on the back surface of the individual semiconductor chip, from the thickness of the portion along the scribe lane from the surface of the semiconductor wafer A dividing groove forming step for forming a shallow dividing groove having a predetermined depth, a protective member attaching step for attaching a protective member to the surface of the semiconductor wafer on which the dividing groove is formed, and a protective member attached to the surface An individual semiconductor chip is formed by grinding the back surface of the semiconductor wafer so that the dividing grooves are exposed on the back surface, and a protective member is attached to the front surface of the semiconductor wafer. Separating groove displaying step for separating, adhesive film attaching step for attaching an adhesive film for die bonding to the back surface of the semiconductor chip individually separated in a state where the protective member is attached, and a plurality of individually separated plural pieces Frame mounting step of aligning the semiconductor chip and the dicing frame, and attaching a dicing tape to the surface side of the die bonding adhesive film attached to the back surface of the semiconductor chip and the dicing frame, and frame mounting A protective member peeling step for peeling the protective member attached to the surface of the semiconductor wafer from the semiconductor wafer thus formed, an exposure step for irradiating the entire surface of the semiconductor wafer with UV light from the side where the protective member is peeled, and The portion irradiated with UV light along the dividing groove of the adhesive film for die bonding is selectively developed with a developer. The method of manufacturing a semiconductor chip, which comprises a development step of removed by, is provided.

  Further, according to the present invention, a semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes is divided into individual semiconductor chips. A method of manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface of each individual semiconductor chip, the predetermined depth being shallower than the thickness of the portion along the scribe lane from the surface of the semiconductor wafer A dividing groove forming step for forming the dividing groove, a protective member attaching step for attaching a protective member to the surface of the semiconductor wafer on which the dividing groove is formed, and a back surface of the semiconductor wafer having the protective member attached to the surface To divide the semiconductor wafer having a protective member attached to the front surface into individual semiconductor chips. Adhesive film attaching process for attaching an adhesive film for die bonding to the back surface of a semiconductor chip that is individually separated with the protective member being attached, and a plurality of individually separated semiconductor chips and dicing A frame mounting process for aligning the frame and adhering a dicing tape to the front surface side of the adhesive film for die bonding and the dicing frame adhered to the back surface of the semiconductor chip, and the surface of the semiconductor wafer. An exposure step of irradiating the entire surface of the protective member with UV light and simultaneously irradiating the protective member through the portion of the dividing groove of the adhesive film for die bonding and irradiating the UV light source; A protective member peeling step for peeling the formed protective member after the exposure step, and the division of the adhesive film for die bonding The method of manufacturing a semiconductor chip, which comprises a developing step of removing at selectively developing solution irradiated portion to UV light, the along is provided.

  Further, according to the present invention, a semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes is divided into individual semiconductor chips. A method of manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface of each individual semiconductor chip, the predetermined depth being shallower than the thickness of the portion along the scribe lane from the surface of the semiconductor wafer A dividing groove forming step for forming the dividing groove, a protective member attaching step for attaching a protective member to the surface of the semiconductor wafer on which the dividing groove is formed, and a back surface of the semiconductor wafer having the protective member attached to the surface To divide the semiconductor wafer having a protective member attached to the front surface into individual semiconductor chips. The adhesive film sticking step for sticking the adhesive film for die bonding to the back surface of the semiconductor chip individually separated in a state where the protective member is stuck, and the protective member stuck on the surface of the semiconductor wafer An exposure step of irradiating the entire surface with UV light and simultaneously irradiating a UV light source through the protective groove through the divided groove portion of the die bonding adhesive film; and the dividing groove of the die bonding adhesive film A portion of the wafer irradiated with UV light is selectively removed with a developing solution, and a plurality of individually separated semiconductor chips and a dicing frame are aligned after the developing step and pasted on the back surface of the semiconductor chip. A frame mounting step of attaching a dicing tape to the surface side of the attached die bonding adhesive film and the dicing frame; The method of manufacturing a semiconductor chip, characterized in that it comprises a protective member peeling step of peeling the protective member is adhered to the surface of the body wafer after said frame mounting step, is provided.

  In the above-mentioned divided groove exposing process, after grinding with a diamond grindstone, a polishing process is performed using a polishing pad, and after grinding with a diamond grindstone, dry etching is performed. It is also possible to perform mirroring processing as necessary.

  In addition, the adhesive film for die bonding used in the present invention has both the property that it is not easily dissolved in the developer unless it is irradiated with UV, and the property that it is dissolved in the developer when irradiated with UV. It has a feature that it can be selectively removed by applying UV irradiation.

  Furthermore, the semiconductor chip manufactured according to the present invention is a semiconductor chip in which a circuit is formed on the front surface and a die bonding adhesive film is mounted on the back surface, and the die bonding adhesive film has the same size as the semiconductor chip. It is characterized by not having a protruding part or a flash.

  According to the semiconductor chip manufacturing method of the present invention, the adhesive film for die bonding is mounted on the back surface of the semiconductor wafer while maintaining the form of the semiconductor wafer although it is separated into individual semiconductor chips by pre-dicing. The adhesive film can be easily attached to the back surface of the semiconductor chip.

  Further, in the present invention, UV light is applied from the circuit surface side of the semiconductor chip by using an adhesive film attached to the back surface of the individually separated semiconductor chip and having an adhesive property as the adhesive film. By irradiating, exposing only the dividing groove portion between each semiconductor chip of the adhesive film, and then developing, the adhesive film can be divided for each semiconductor chip, leaving the part of the back surface of each semiconductor chip . In addition, since the dividing groove of the semiconductor chip is used as a photomask during UV irradiation, this method can be easily realized without the need for alignment. For example, it is possible to use a conventional UV irradiator that exposes the entire surface of a semiconductor wafer that has been used for UV curing of a surface protection member and UV curing of a dicing tape.

  Furthermore, the obtained semiconductor chip has no backside chipping, and the adhesive film attached to the backside does not protrude from the semiconductor chip or generate flash, and is a semiconductor chip with few defects in the packaging process. Therefore, it is possible to reduce defects in the semiconductor device manufacturing process and improve product quality.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, a semiconductor chip manufacturing method according to an embodiment of the invention will be described with reference to the drawings.
FIG. 1 is a perspective view of a semiconductor wafer divided according to the present invention. A semiconductor wafer 1 shown in FIG. 1 has a plurality of scribe lanes 11 formed in a lattice shape on the surface, and a semiconductor circuit 12 formed in a plurality of regions partitioned by the plurality of scribe lanes 11. A method for manufacturing a semiconductor chip by dividing the semiconductor wafer 1 into individual semiconductor chips will be described with reference to cross-sectional views from the first to third embodiments.
(Embodiment 1)
2A to 2L are cross-sectional views showing respective steps of the semiconductor chip manufacturing method according to the first embodiment. 2 (a) to (l), 1 is a semiconductor wafer, 121 is a bonding pad, 122 is an active circuit, 123 is a passivation film, 2 is a surface protection tape, 4 is an adhesive film for die bonding, and 6 is a dicing tape. Respectively.

First, as shown in FIG. 2A, a bonding pad 121, an active circuit 122, a passivation film 123, and the like are formed on the surface of the semiconductor wafer 1. Next, as shown in FIG. 2 (b), a predetermined depth shallower than the thickness of the semiconductor wafer 1 is used at a position located on the scribe lane on the semiconductor wafer 1 using a cutting device generally used as a dicing device. The dividing groove 13 is formed. Next, as shown in FIG. 2 (c), the surface protection tape 2 is attached on the surface of the semiconductor wafer 1 on which the dividing grooves 13 are formed. Next, as shown in FIG. 2 (d), the semiconductor wafer 1 is inverted, and as shown in FIG. 2 (e), the back surface of the semiconductor wafer 1 is ground using a grinding apparatus 3 equipped with a grinding wheel. As shown in FIG. 2 (f), the dividing grooves 13 are exposed on the back surface and divided into individual semiconductor chips 8 with the surface protective tape 2 adhered to the front surface (dividing groove expression). Process). Next, as shown in FIG. 2G, an adhesive film 4 for die bonding is attached to the back surface of the semiconductor wafer 1 divided into individual semiconductor chips 8. Next, as shown in FIG. 2 (h), the semiconductor wafer 1 separated into individual semiconductor chips 8 is positioned near the center of the dicing frame 5 and is bonded to the back surface of the semiconductor chip 8. A dicing tape 6 is attached to the surface side of the adhesive film 4 and the dicing frame 5. Next, as shown in FIG. 2 (i), the dicing frame 5 is reversed and the surface protection tape 2 attached to the surface of the semiconductor chip 8 is peeled off from the semiconductor chip 8. Next, as shown in FIG. 2 (j), UV light 7 is irradiated from the surface side of the semiconductor wafer 1. As a result, as shown in FIG. 2 (k), the die bonding adhesive film 4 in the portion of the divided groove 13 of each divided semiconductor chip 8 is exposed. Finally, by exposing the surface of the semiconductor wafer 1 to a developing solution such as a TMAH (tetramethylammonium hydroxide) solution, the exposed portion 41 of the die bonding adhesive film 4 is dissolved, and FIG. As shown in FIG. 1, the adhesive film 4 for die bonding is divided so as to leave portions of the individual semiconductor chips 8. In this manner, the semiconductor chip 8 with the die bonding adhesive film 4 mounted on the back surface can be manufactured.
(Embodiment 2)
FIGS. 3A to 3K are cross-sectional views showing respective steps of the semiconductor chip manufacturing method according to the second embodiment. 3A to 3K, 1 is a semiconductor wafer, 121 is a bonding pad, 122 is an active circuit, 123 is a passivation film, 2 is a surface protection tape, 4 is an adhesive film for die bonding, and 6 is a dicing tape. Respectively.

First, as shown in FIG. 3A, a bonding pad 121, an active circuit 122, a passivation film 123, and the like are formed on the surface of the semiconductor wafer 1. Next, as shown in FIG. 3 (b), a predetermined depth shallower than the thickness of the semiconductor wafer 1 is used at a position located on the scribe lane on the semiconductor wafer 1 using a cutting apparatus generally used as a dicing apparatus. The dividing groove 13 is formed. Next, as shown in FIG. 3C, the surface protection tape 2 is attached on the surface of the semiconductor wafer 1 in which the division grooves 13 are formed. Next, as shown in FIG. 3 (d), the semiconductor wafer 1 is inverted, and as shown in FIG. 3 (e), the back surface of the semiconductor wafer 1 is ground using a grinding apparatus 3 equipped with a grinding wheel. As shown in FIG. 3 (f), the dividing grooves 13 are exposed on the back surface and divided into individual semiconductor chips 8 with the surface protective tape 2 adhered to the front surface (dividing groove expression). Process). Next, as shown in FIG. 3G, an adhesive film 4 for die bonding is attached to the back surface of the semiconductor wafer 1 divided into individual semiconductor chips 8. Next, as shown in FIG. 3 (h), the semiconductor wafer 1 separated into individual semiconductor chips 8 is positioned near the center of the dicing frame 5 and is bonded to the back surface of the semiconductor chip 8. A dicing tape 6 is attached to the surface side of the adhesive film 4 and the dicing frame 5. Next, as shown in FIG. 3 (i), the dicing frame 5 is inverted and irradiated with UV rays 7 from the surface side of the surface protection tape 2 attached to the semiconductor wafer 1. As a result, as shown in FIG. 3 (j), the adhesive film 4 for die bonding is exposed to the portions of the divided grooves 13 of the individual semiconductor chips 8 divided by the UV light 7 passing through the surface protection tape 2. Is done. Further, when a UV curable tape whose adhesive strength is reduced by the irradiation of the UV light 7 is used as the surface protective tape 2, the adhesive strength of the surface protective tape 2 is reduced during the irradiation of the UV light 7, and FIG. As shown in (j), the surface protection tape 2 can be easily peeled off. Finally, by exposing the surface of the semiconductor wafer 1 to a developer such as a TMAH (tetramethylammonium hydroxide) solution, the exposed portion 41 of the die bonding adhesive film 4 is dissolved, and FIG. As shown in FIG. 1, the adhesive film 4 for die bonding is divided so as to leave portions of the individual semiconductor chips 8. In this manner, the semiconductor chip 8 with the die bonding adhesive film 4 mounted on the back surface can be manufactured.
(Embodiment 3)
A semiconductor chip manufacturing method according to the third embodiment will be described with reference to process cross-sectional views shown in FIGS. 3 (a) to 3 (g) and FIGS. 4 (a) to 4 (e). In these figures, 1 is a semiconductor wafer, 121 is a bonding pad, 122 is an active circuit, 123 is a passivation film, 2 is a surface protection tape, 4 is an adhesive film for die bonding, and 6 is a dicing tape.

  First, as shown in FIG. 3A, a bonding pad 121, an active circuit 122, a passivation film 123, and the like are formed on the surface of the semiconductor wafer 1. Next, as shown in FIG. 3 (b), a predetermined depth shallower than the thickness of the semiconductor wafer 1 is used at a position located on the scribe lane on the semiconductor wafer 1 using a cutting apparatus generally used as a dicing apparatus. The dividing groove 13 is formed. Next, as shown in FIG. 3C, the surface protection tape 2 is attached on the surface of the semiconductor wafer 1 in which the division grooves 13 are formed. Next, as shown in FIG. 3 (d), the semiconductor wafer 1 is inverted, and as shown in FIG. 3 (e), the back surface of the semiconductor wafer 1 is ground using a grinding apparatus 3 equipped with a grinding wheel. As shown in FIG. 3 (f), the dividing grooves 13 are exposed on the back surface and divided into individual semiconductor chips 8 with the surface protective tape 2 adhered to the front surface (dividing groove expression). Process). Next, as shown in FIG. 3G, an adhesive film 4 for die bonding is attached to the back surface of the semiconductor wafer 1 divided into individual semiconductor chips 8. Next, as shown in FIG. 4A, UV light 7 is irradiated from the surface side of the surface protection tape 2 attached to the semiconductor wafer 1. At this time, the UV light 7 passes through the surface protection tape 2, so that the adhesive film 4 for die bonding in the divided groove 13 portion of each divided semiconductor chip 8 is formed as shown in FIG. Exposed. Further, when a UV curable tape whose adhesive strength is reduced by irradiating with UV light 7 is used as the surface protective tape 2, the adhesive strength of the surface protective tape 2 is reduced simultaneously with the irradiation of the UV light 7. The surface protective tape 2 can be easily peeled off. However, the surface protection tape 2 is not yet peeled here. Next, the surface of the die bonding adhesive film 4 attached to the back surface of the semiconductor wafer 1 is exposed to a developer such as a TMAH (tetramethylammonium hydroxide) solution, thereby exposing the die bonding adhesive film 4. The formed portion 41 is melted, and the die bonding adhesive film 4 is divided while leaving the portions of the individual semiconductor chips 8 as shown in FIG. Next, as shown in FIG. 4D, the semiconductor wafer 1 separated into individual semiconductor chips 8 is aligned near the center of the dicing frame 5 and is bonded to the back surface of the semiconductor chip 8. A dicing tape 6 is attached to the surface side of the adhesive film 4 and the dicing frame 5, and the surface protective tape 2 is peeled off. In this manner, the semiconductor chip 8 with the die bonding adhesive film 4 mounted on the back surface can be manufactured.

  In addition, in the dividing groove exposing step in each of the first to third embodiments, after grinding with a diamond grindstone, a polishing process is performed using a polishing pad, and grinding with a diamond grindstone is performed. It is also possible to apply a mirror etching process after performing dry etching as necessary.

  As described above, according to the semiconductor chip manufacturing method described in the first to third embodiments, the bonding pad 121, the active circuit 122, and the passivation film 123 are provided on the front surface as shown in FIG. Thus, it is possible to satisfactorily manufacture the semiconductor chip 8 on which the adhesive film 4 for die bonding is mounted. In particular, according to the method of manufacturing a semiconductor chip according to the present invention, as shown in FIGS. 2 to 4, the semiconductor wafer 1 is maintained in the form of being separated into individual semiconductor chips 8 by prior dicing. Since the adhesive film 4 for die bonding is attached to the back surface in the state, the adhesive film 4 can be easily attached to the back surface of the semiconductor chip 8.

  Further, according to the present invention, the adhesive film 4 adhered to the back surface of the individually separated semiconductor chip 8 is used as the adhesive film 4 having photosensitive properties, and irradiated with UV light 7. By performing the development, the adhesive film 4 can be divided for each semiconductor chip 8 while leaving the portion of the back surface of each semiconductor chip 8 in the adhesive film 4. Further, since the dividing groove 13 of the semiconductor chip 8 is used as a photomask at the time of UV irradiation, it is not necessary to perform alignment and the like and can be easily realized.

  Further, in the present invention, since the individual semiconductor chips 8 are separated by so-called tip dicing, the obtained semiconductor chip 8 does not have the back surface chipping 9 as shown in FIG. The adhesive film 4 is a semiconductor chip 8 that does not protrude from the semiconductor chip 8 and does not generate the flash 42 and has few defects in the packaging process. Therefore, it is possible to prevent significant deterioration of the bending strength and vibration drop strength of the semiconductor chip 8 due to the chipping 9 as has been conventionally generated, and it is possible to easily and satisfactorily manufacture a thin semiconductor chip 8 having a high strength of 50 μm or less. In addition, it is possible to prevent the occurrence of problems such as non-bonding of wire bonding and deterioration of fluidity of the sealing resin due to the protrusion of the adhesive film 4 and the flash 42 which have occurred in the past. Thus, in recent years, this is a very useful technique as a method of manufacturing the semiconductor chip 8 that can easily obtain performance that has been difficult so far, which is thinner / smaller and higher in strength than required for a semiconductor chip.

  The method for manufacturing a semiconductor chip according to the present invention is particularly suitable as a method for manufacturing a semiconductor chip that is reduced in thickness and size, but is not limited thereto, and can be used as a method for manufacturing various semiconductor chips.

The perspective view of the semiconductor wafer divided | segmented by the manufacturing method of the semiconductor chip by this invention Process sectional drawing which shows the manufacturing method of the semiconductor chip in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the semiconductor chip in Embodiment 2 and 3 of this invention Process sectional drawing which shows the manufacturing method of the semiconductor chip in Embodiment 3 of this invention Sectional drawing which shows the structure of the semiconductor chip in this invention Sectional view showing the structure of a conventional semiconductor chip

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 121 Bonding pad 122 Active circuit 123 Passivation film | membrane 13 Dividing groove | channel (scribe lane)
2 Surface protective tape (protective member)
DESCRIPTION OF SYMBOLS 3 Grinding machine 4 Adhesive film for die bonding 41 Exposed part of adhesive film for die bonding 5 Dicing frame 6 Dicing tape 7 UV light

Claims (7)

A semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes is divided into individual semiconductor chips, and the semiconductor chips A method of manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface, wherein a split groove having a predetermined depth shallower than the thickness of the portion is formed along the scribe lane from the surface of the semiconductor wafer A forming step, a protective member adhering step for adhering a protective member to the surface of the semiconductor wafer on which the dividing grooves are formed, and grinding the back surface of the semiconductor wafer having the protective member adhering to the surface to the back surface A dividing groove exposing process for separating the semiconductor wafer having a surface on which the protective member is attached and separating the semiconductor wafer into individual semiconductor chips, and the protective member is attached. The adhesive film attaching process for adhering the adhesive film for die bonding to the back surface of the individually separated semiconductor chip in a separated state, and aligning the plurality of individually separated semiconductor chips and the dicing frame A frame mounting step of attaching a dicing tape to the surface side of the die bonding adhesive film attached to the back surface of the chip and the dicing frame; and a frame mounted semiconductor wafer attached to the surface of the semiconductor wafer. A protective member peeling step for peeling the protective member, an exposure step for irradiating the entire surface of the semiconductor wafer with UV light from the side where the protective member is peeled, and UV light along the dividing grooves of the die bonding adhesive film. And a developing step for selectively removing a portion irradiated with a developer. Method for producing a conductor chips. A semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes is divided into individual semiconductor chips, and the semiconductor chips A method of manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface, wherein a split groove having a predetermined depth shallower than the thickness of the portion is formed along the scribe lane from the surface of the semiconductor wafer A forming step, a protective member adhering step for adhering a protective member to the surface of the semiconductor wafer on which the dividing grooves are formed, and grinding the back surface of the semiconductor wafer having the protective member adhering to the surface to the back surface A dividing groove exposing process for separating the semiconductor wafer having a surface on which the protective member is attached and separating the semiconductor wafer into individual semiconductor chips, and the protective member is attached. The adhesive film attaching process for adhering the adhesive film for die bonding to the back surface of the individually separated semiconductor chip in a separated state, and aligning the plurality of individually separated semiconductor chips and the dicing frame A frame mounting step of attaching a dicing tape to the surface side of the die bonding adhesive film attached to the back surface of the chip and the dicing frame, and UV over the entire surface of the protective member attached to the surface of the semiconductor wafer An exposure step of irradiating a light beam and simultaneously irradiating a UV light source through the protective groove part of the die bonding adhesive film and a protective member adhered to the surface of the semiconductor wafer A protective member peeling step that peels off later, and irradiation with UV light along the dividing grooves of the adhesive film for die bonding. The method of manufacturing a semiconductor chip, which comprises a developing step of removing at selectively developing solution portion, a. A semiconductor wafer in which a plurality of scribe lanes are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scribe lanes is divided into individual semiconductor chips, and the semiconductor chips A method of manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface, wherein a split groove having a predetermined depth shallower than the thickness of the portion is formed along the scribe lane from the surface of the semiconductor wafer A forming step, a protective member adhering step for adhering a protective member to the surface of the semiconductor wafer on which the dividing grooves are formed, and grinding the back surface of the semiconductor wafer having the protective member adhering to the surface to the back surface A dividing groove exposing process for separating the semiconductor wafer having a surface on which the protective member is attached and separating the semiconductor wafer into individual semiconductor chips, and the protective member is attached. The adhesive film sticking process for sticking the die bonding adhesive film to the back surface of the individually separated semiconductor chips in a state of being separated, and the entire surface of the protective member attached to the surface of the semiconductor wafer is irradiated with UV light At the same time, an exposure process of irradiating a UV light source through the protective member through the part of the dividing groove of the die-bonding adhesive film, and UV irradiation along the dividing groove of the die-bonding adhesive film A developing process for selectively removing a portion with a developing solution, and a plurality of individually separated semiconductor chips and a dicing frame are aligned after the developing process, and bonded to the back surface of the semiconductor chip. A frame mounting step of adhering a dicing tape to the surface side of the wafer and the dicing frame, and affixing to the surface of the semiconductor wafer The method of manufacturing a semiconductor chip, characterized in that it comprises a protective member peeling step of peeling the protective member which is after the frame mounting step, the. The semiconductor chip according to any one of claims 1 to 3, wherein, in the dividing groove exposing step, after polishing with a diamond grindstone, mirror polishing is performed by polishing using a polishing pad. Manufacturing method. 4. The method of manufacturing a semiconductor chip according to claim 1, wherein, in the dividing groove exposing step, after performing grinding with a diamond grindstone, dry etching is performed to perform a mirror surface treatment. 5. . The adhesive film for die bonding has both the property that it is not easily dissolved in the developer unless it is irradiated with UV, and the property that it is dissolved in the developer when irradiated with UV. The method for manufacturing a semiconductor chip according to any one of claims 1 to 3, wherein the semiconductor chip can be removed in an effective manner. A semiconductor chip in which a circuit is formed on the front surface and a die-bonding adhesive film is mounted on the back surface, and the die-bonding adhesive film has the same size as the semiconductor chip and does not have a protruding portion or flash. A semiconductor chip.

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