JPH05266435A - Thin film magnetic head - Google Patents

Thin film magnetic head

Info

Publication number
JPH05266435A
JPH05266435A JP9385792A JP9385792A JPH05266435A JP H05266435 A JPH05266435 A JP H05266435A JP 9385792 A JP9385792 A JP 9385792A JP 9385792 A JP9385792 A JP 9385792A JP H05266435 A JPH05266435 A JP H05266435A
Authority
JP
Japan
Prior art keywords
magnetic
film
shield film
magnetic shield
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9385792A
Other languages
Japanese (ja)
Inventor
Mikio Matsuzaki
幹男 松崎
Kiichirou Ezaki
城一朗 江▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP9385792A priority Critical patent/JPH05266435A/en
Publication of JPH05266435A publication Critical patent/JPH05266435A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Magnetic Heads (AREA)

Abstract

PURPOSE:To provide a thin film magnetic head with a simple structure which does not generate degradation of characteristics of an MR element due to metallic diffusion. CONSTITUTION:The head has a slider 1 and a read magnetic conversion element 2. The read magnetic conversion element 2 contains a first magnetic shield film 21, a second magnetic shield film 22 and a magnetoresistance effect element 23, and arranged by being placed opposite each other via a space and also constitute an electric circuit by being mutually connected electrically. The magnetoresistance effect element 23 is arranged between the first magnetic shield film 21 and the second magnetic shield film 22 and the magnetic field generated by an electric current flowing through an electric circuit which is made by both 21, 22 is impressed as a bias magnetic field Hb.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、薄膜磁気ヘッドに関
し、更に詳しくは、磁気抵抗効果素子(以下MR素子と
称する)を読み出し素子として用いた薄膜磁気ヘッドの
改良に係わる。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head, and more particularly to improvement of a thin film magnetic head using a magnetoresistive effect element (hereinafter referred to as MR element) as a read element.

【0002】[0002]

【従来の技術】従来、薄膜磁気ヘッドとしては、誘導型
薄膜磁気変換素子を読み書き素子として使用したものが
最もよく知られている。誘導型薄膜磁気変換素子を用い
た薄膜磁気ヘッドにおいて、高い読み出し出力を得るに
は、磁気ディスクと磁気ヘッドとの間の相対速度を上げ
るか、または、コイルのターン数を増大させる必要があ
る。しかし、磁気ディスクが小型化される傾向にあるた
め、相対速度の高速化による読み出し出力の増大は実情
に合わない。また、コイルのターン数増大による読み出
し出力は、コイルのインダクタンス及び直流抵抗値の増
大を招き、高周波特性を悪化させ、高速読み出しに適応
できなくなる。かかる問題点を解決する手段として、読
み出し素子をMR素子によって構成し、誘導型薄膜磁気
変換素子は書込み専用として用いるようにした技術が提
案されている。公知技術文献としては、例えば特公昭5
9−35088号公報、特公昭64ー1846号公報等
がある。
2. Description of the Related Art Conventionally, as a thin film magnetic head, a thin film magnetic head using an inductive thin film magnetic conversion element as a read / write element is best known. In a thin film magnetic head using an inductive thin film magnetic conversion element, it is necessary to increase the relative speed between the magnetic disk and the magnetic head or increase the number of coil turns in order to obtain a high read output. However, since the magnetic disk tends to be miniaturized, the increase in read output due to the increase in relative speed is not suitable for the actual situation. In addition, the read output due to the increase in the number of turns of the coil increases the inductance and the DC resistance of the coil, deteriorates the high frequency characteristics, and cannot be adapted to high speed reading. As a means for solving such a problem, a technique has been proposed in which the read element is composed of an MR element and the inductive type thin film magnetic conversion element is used only for writing. As a known technical document, for example, Japanese Patent Publication No. 5
9-35088 and Japanese Patent Publication No. 64-1846.

【0003】これらの公知文献で知られた読み出し用磁
気変換素子は、導体膜と、MR素子と、磁気シールド膜
とを含んでいる。導体膜は2つ備えられ、それぞれが互
いに間隔を隔てて横並びに配置され、一端側がスライダ
の媒体対向面側に位置し、他端側が後方に導かれてい
る。MR素子は、導体膜の一端側において導体膜間に接
続されている。磁気シールド膜は、第1の磁気シールド
膜及び第2の磁気シールド膜を含み、これらが非磁性の
電気絶縁膜を介して導体膜及びMR素子を上下方向の両
側から挟むように配置されている。
The read magnetic conversion element known in these publicly known documents includes a conductor film, an MR element, and a magnetic shield film. Two conductor films are provided, arranged side by side with an interval between each other, one end side being located on the medium facing surface side of the slider, and the other end side being guided rearward. The MR element is connected between the conductor films on one end side of the conductor films. The magnetic shield film includes a first magnetic shield film and a second magnetic shield film, which are arranged so as to sandwich the conductor film and the MR element from both sides in the vertical direction with a nonmagnetic electrically insulating film interposed therebetween. ..

【0004】MR素子には、導体膜を通してセンス電流
を流す他、入力磁界に対して直線性のよい検出信号を得
るため、バイアス磁界が加えられる。バイアス磁界を発
生する手段として、MR素子に直接にバイアス導体膜を
成膜し、バイアス導体膜に流す電流による発生磁界を利
用してバイアスを加えるシャントバイアス方式、MR素
子に近接して薄膜永久磁石を配置し、薄膜永久磁石の発
生磁界を利用するマグネットバイアス方式等が知られて
おり、シャントバイアス方式が主流になっている。
A bias magnetic field is applied to the MR element in order to pass a sense current through the conductor film and to obtain a detection signal having a good linearity with respect to the input magnetic field. As a means for generating a bias magnetic field, a bias conductor film is directly formed on the MR element, and a shunt bias method in which a bias is applied by using a magnetic field generated by a current flowing through the bias conductor film, a thin film permanent magnet close to the MR element. A magnet bias method and the like in which a magnetic field generated by a thin film permanent magnet is used are known, and the shunt bias method is predominant.

【0005】読み出し動作において、導体膜を通してM
R素子にセンス電流を流しておき、磁気ディスクの磁界
の変化を、MR素子の電気抵抗値の変化として検出す
る。磁気シールド膜はこの読み出し動作時にMR素子が
外部磁界の影響、特に、他の磁化反転遷移領域から生じ
る磁界の影響を遮断する。
In the read operation, M is passed through the conductor film.
A sense current is passed through the R element, and a change in the magnetic field of the magnetic disk is detected as a change in the electrical resistance value of the MR element. The magnetic shield film blocks the influence of the external magnetic field, particularly the influence of the magnetic field generated from the other magnetization reversal transition region, on the MR element during the read operation.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、シャン
トバイアス方式を採る場合、MR素子を構成するパーマ
ロイなどの磁気抵抗効果膜に、0.1〜0.2μm程度
の微小厚みであるバイアス導体膜を積層して設けなけれ
ばならない。このため、MR素子部分の構造が複雑化す
る。
However, when the shunt bias method is adopted, a bias conductor film having a minute thickness of about 0.1 to 0.2 μm is laminated on a magnetoresistive effect film such as permalloy constituting an MR element. Must be established. Therefore, the structure of the MR element portion becomes complicated.

【0007】また、バイアス導体膜とMR素子膜との間
に金属拡散が発生し、MR素子の特性を劣化させるなど
の問題を生じる。
Further, metal diffusion occurs between the bias conductor film and the MR element film, which causes problems such as deterioration of the characteristics of the MR element.

【0008】そこで、本発明の課題は上述する問題点を
解決し、構造が簡単で、金属拡散による特性劣化を生じ
ることのない薄膜磁気ヘッドを提供することである。
Therefore, an object of the present invention is to solve the above-mentioned problems, and to provide a thin film magnetic head having a simple structure and free from characteristic deterioration due to metal diffusion.

【0009】[0009]

【課題を解決するための手段】上述した課題解決のた
め、本発明は、スライダと、読み出し用磁気変換素子と
を有する薄膜磁気ヘッドであって、前記読み出し用磁気
変換素子は、第1の磁気シールド膜と、第2の磁気シー
ルド膜と、MR素子とを含み、前記スライダ上に設けら
れており、前記第1の磁気シールド膜及び前記第2の磁
気シールド膜は、間隔を隔てて対向して配置される共
に、電気的に結合されて電気回路を構成しており、前記
MR素子は、前記第1の磁気シールド膜と前記第2の磁
気シールド膜との間に配置され、前記電気回路に流れる
電流の生じる磁界がバイアス磁界として印加される。
To solve the above problems, the present invention is a thin film magnetic head having a slider and a read magnetic conversion element, wherein the read magnetic conversion element is a first magnetic element. A shield film, a second magnetic shield film, and an MR element are provided on the slider, and the first magnetic shield film and the second magnetic shield film are opposed to each other with a space therebetween. And the MR element is arranged between the first magnetic shield film and the second magnetic shield film to form an electric circuit. The magnetic field generated by the current flowing in the is applied as a bias magnetic field.

【0010】[0010]

【作用】第1の磁気シールド膜及び第2の磁気シールド
膜は、間隔を隔てて対向して配置されており、MR素子
は第1の磁気シールド膜と第2の磁気シールド膜との間
に配置されているから、MR素子が、その読み出し動作
時に、外部磁界の影響、特に、他の磁化反転遷移領域か
ら生じる磁界の影響を受けるのを遮断できる。
The first magnetic shield film and the second magnetic shield film are arranged so as to face each other with a space therebetween, and the MR element is provided between the first magnetic shield film and the second magnetic shield film. Since the MR element is arranged, it is possible to block the MR element from being influenced by an external magnetic field, particularly, a magnetic field generated from another magnetization reversal transition region during the read operation.

【0011】第1の磁気シールド膜及び第2の磁気シー
ルド膜は電気的に結合されて電気回路を構成しており、
MR素子は第1、第2の磁気シールド膜によって構成さ
れる電気回路に流れる電流の生じる磁界がバイアス磁界
として印加されるから、第1の磁気シールド膜及び第2
の磁気シールド膜をバイアス磁界発生手段として兼用で
きる。従来のシャットバイアス方式で必須であったバイ
アス導体膜が不要である。このため、構造が簡単になる
と共に、金属拡散によるMR素子の特性劣化を生じるこ
ともなくなる。
The first magnetic shield film and the second magnetic shield film are electrically coupled to form an electric circuit.
In the MR element, the magnetic field generated by the current flowing in the electric circuit formed by the first and second magnetic shield films is applied as the bias magnetic field, so that the first magnetic shield film and the second magnetic shield film are used.
The magnetic shield film can also be used as a bias magnetic field generating means. The bias conductor film, which is essential in the conventional shut bias method, is unnecessary. Therefore, the structure is simplified and the characteristics of the MR element are not deteriorated due to metal diffusion.

【0012】[0012]

【実施例】図1は本発明に係る薄膜磁気ヘッドを構成す
る読み出し用磁気変換素子部分をモデル化して示す斜視
図、図2は同じく断面図である。1はスライダ、2は読
み出し用磁気変換素子である。スライダ1は周知のセラ
ミック構造体でなり、媒体対向面側が高度の平面度を有
する空気ベアリング面11となっている。aは媒体の走
行方向を示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a perspective view showing a model of a read magnetic conversion element constituting a thin film magnetic head according to the present invention, and FIG. 2 is a sectional view of the same. Reference numeral 1 is a slider, and 2 is a read magnetic conversion element. The slider 1 is made of a known ceramic structure, and the medium facing surface side is an air bearing surface 11 having a high degree of flatness. a indicates the traveling direction of the medium.

【0013】読み出し用磁気変換素子2は、第1の磁気
シールド膜21と、第2の磁気シールド膜22と、MR
素子23とを含み、スライダ1の上に設けられている。
第1の磁気シールド膜21及び第2の磁気シールド膜2
2は、間隔dを隔てて対向して配置される共に、互いに
電気的に結合されて電気回路を構成している。24は第
1の磁気シールド膜21と第2の磁気シールド膜22の
一端を電気的に接続する導体膜である。導体膜24は例
えばAu等による非磁性金属膜によって形成する。第1
の磁気シールド膜21は、導体膜24のある方向とは反
対側に位置する他端が電流制限抵抗Rを介して、バイア
ス電源Vに接続されており、第2の磁気シールド膜22
は他端が接地されている。これによってバイアス回路が
構成される。
The read magnetic conversion element 2 includes a first magnetic shield film 21, a second magnetic shield film 22, and an MR.
The element 23 is included and is provided on the slider 1.
First magnetic shield film 21 and second magnetic shield film 2
2 are arranged to face each other with a space d therebetween and are electrically coupled to each other to form an electric circuit. Reference numeral 24 is a conductor film that electrically connects one ends of the first magnetic shield film 21 and the second magnetic shield film 22. The conductor film 24 is formed of, for example, a nonmagnetic metal film made of Au or the like. First
The other end of the magnetic shield film 21 is located on the side opposite to the direction in which the conductor film 24 is present, and is connected to the bias power source V via the current limiting resistor R.
Is grounded at the other end. This constitutes a bias circuit.

【0014】MR素子23は、第1の磁気シールド膜2
1と第2の磁気シールド膜22との間に配置され、第1
の磁気シールド膜21及び第2の磁気シールド膜22に
よって構成される電気回路に流れる電流Ibの生じる磁
界がバイアス磁界Hbとして印加される。MR素子23
はNi−Fe、Ni−Co等の強磁性薄膜材料を用いた
薄膜であり、導体膜25ー26間に配置されている。導
体膜25、26は間隔を隔ててほぼ平行に横並びに配置
され、空気ベアリング面11側に位置する間隔がトラッ
ク幅を規定している。
The MR element 23 includes the first magnetic shield film 2
The first magnetic shield film 22 and the first magnetic shield film 22.
The magnetic field generated by the current Ib flowing through the electric circuit formed by the magnetic shield film 21 and the second magnetic shield film 22 is applied as the bias magnetic field Hb. MR element 23
Is a thin film using a ferromagnetic thin film material such as Ni-Fe or Ni-Co, and is arranged between the conductor films 25-26. The conductor films 25 and 26 are arranged side by side substantially parallel to each other with a space therebetween, and the space located on the air bearing surface 11 side defines the track width.

【0015】読み出し動作において、導体膜21、22
を通してMR素子23にセンス電流Iを流すと共に、第
1の磁気シールド膜21、第2の磁気シールド膜22及
び導体膜24によって構成される電気回路にバイアス電
流Ibを流し、バイアス磁界Hbを発生させ、このバイ
アス磁界HbをMR素子23に印加する。そして、磁気
ディスク(図示しない)の磁界の変化を、MR素子23
の電気抵抗値の変化として検出する。
In the read operation, the conductor films 21 and 22
Through the MR element 23, and at the same time, the bias current Ib is caused to flow in the electric circuit constituted by the first magnetic shield film 21, the second magnetic shield film 22 and the conductor film 24 to generate the bias magnetic field Hb. , The bias magnetic field Hb is applied to the MR element 23. Then, the change in the magnetic field of the magnetic disk (not shown) is reflected by the MR element 23.
It is detected as a change in the electric resistance value of.

【0016】ここで、第1の磁気シールド膜21及び第
2の磁気シールド膜22は、間隔dを隔てて対向して配
置されており、MR素子23は第1の磁気シールド膜2
1と第2の磁気シールド膜22との間に配置されている
から、MR素子23が、その読み出し動作時に、外部磁
界の影響、特に、他の磁化反転遷移領域から生じる磁界
の影響を受けるのを遮断できる。
Here, the first magnetic shield film 21 and the second magnetic shield film 22 are arranged so as to face each other with a space d therebetween, and the MR element 23 has the first magnetic shield film 2
Since the MR element 23 is arranged between the first magnetic shield film 22 and the second magnetic shield film 22, the MR element 23 is affected by an external magnetic field, particularly, a magnetic field generated from another magnetization reversal transition region during the read operation. Can be shut off.

【0017】また、第1の磁気シールド膜21及び第2
の磁気シールド膜22は電気的に結合されて電気回路を
構成しており、MR素子23は第1の磁気シールド膜2
1及び第2の磁気シールド膜22によって構成される電
気回路に流れる電流Ibの生じる磁界がバイアス磁界H
bとして印加されるから、第1の磁気シールド膜21及
び第2の磁気シールド膜22をバイアス磁界発生手段と
して兼用できる。従来のシャットバイアス方式で必須で
あったバイアス導体膜が不要である。このため、構造が
簡単になると共に、金属拡散によるMR素子23の特性
劣化を生じることもなくなる。
Further, the first magnetic shield film 21 and the second magnetic shield film 21
Of the first magnetic shield film 2 and the MR element 23 are electrically coupled to each other to form an electric circuit.
The magnetic field generated by the current Ib flowing through the electric circuit formed by the first and second magnetic shield films 22 is the bias magnetic field H.
Since it is applied as b, the first magnetic shield film 21 and the second magnetic shield film 22 can also be used as the bias magnetic field generating means. The bias conductor film, which is essential in the conventional shut bias method, is unnecessary. Therefore, the structure is simplified and the characteristics of the MR element 23 are not deteriorated due to metal diffusion.

【0018】図3は本発明に係る薄膜磁気ヘッドの具体
的な構造例を示す断面図である。図において、図1及び
図2と同一の参照符号は同一性ある構成部分を示してい
る。3は書き込み用磁気変換素子である。
FIG. 3 is a sectional view showing a specific structural example of the thin film magnetic head according to the present invention. In the figure, the same reference numerals as those in FIGS. 1 and 2 denote the same components. Reference numeral 3 is a magnetic conversion element for writing.

【0019】スライダ1は、セラミック構造体である基
体部分10の上にアルミナ等でなる電気絶縁膜12を有
している。読み出し用磁気変換素子2は、MR素子23
を電気絶縁膜12の内部に層状に埋設して構成されてい
る。第2の磁気シールド膜22は、スライダ1の基体部
分10と絶縁膜12との間に設けられ、パーマロイなど
の磁性膜によって構成されている。第1の磁気シールド
膜21は、後で説明するように書き込み用磁気変換素子
3の下部磁性膜31を兼用して構成される。
The slider 1 has an electric insulating film 12 made of alumina or the like on a base portion 10 which is a ceramic structure. The read magnetic conversion element 2 is the MR element 23.
Are embedded inside the electric insulating film 12 in layers. The second magnetic shield film 22 is provided between the base portion 10 of the slider 1 and the insulating film 12, and is made of a magnetic film such as permalloy. The first magnetic shield film 21 also serves as the lower magnetic film 31 of the write magnetic conversion element 3 as described later.

【0020】書き込み素子33は、下部磁性膜31、上
部磁性膜32、コイル膜33、アルミナ等でなるギャッ
プ膜34、ノボラック樹脂等の有機樹脂で構成された絶
縁膜35及び保護膜36などを有して、絶縁膜12の上
に積層されている。下部磁性膜31及び上部磁性膜32
の先端部は微小厚みのギャップ膜34を隔てて対向する
ポール部P1、P2となっており、ポール部P1、P2
において書き込みを行なう。下部磁性膜31及び上部磁
性膜32のヨーク部であり、ポール部P1、P2とは反
対側にあるバックギャップ部において、磁気回路を完成
するように互いに結合されている。絶縁膜35の上に、
ヨーク部の結合部のまわりを渦巻状にまわるように、コ
イル膜33を形成してある。図示は、面内記録再生用磁
気ヘッドであるが、垂直磁気記録再生用磁気ヘッド等で
あってもよい。
The writing element 33 has a lower magnetic film 31, an upper magnetic film 32, a coil film 33, a gap film 34 made of alumina or the like, an insulating film 35 made of an organic resin such as novolac resin, and a protective film 36. Then, it is laminated on the insulating film 12. Lower magnetic film 31 and upper magnetic film 32
Of the pole portions P1 and P2 facing each other across the gap film 34 having a very small thickness.
Write in. The yoke portions of the lower magnetic film 31 and the upper magnetic film 32 are connected to each other so as to complete a magnetic circuit in the back gap portion on the side opposite to the pole portions P1 and P2. On the insulating film 35,
The coil film 33 is formed so as to spirally surround the coupling portion of the yoke portion. Although the drawing shows the in-plane recording / reproducing magnetic head, it may be a perpendicular magnetic recording / reproducing magnetic head or the like.

【0021】そして、下部磁性膜31が読み出し用磁気
変換素子2の第1の磁気シールド膜21として兼用され
ている。
The lower magnetic film 31 is also used as the first magnetic shield film 21 of the read magnetic conversion element 2.

【0022】[0022]

【発明の効果】以上述べたように、本発明は、スライダ
と、読み出し用磁気変換素子とを有する薄膜磁気ヘッド
であって、読み出し用磁気変換素子は、第1の磁気シー
ルド膜と、第2の磁気シールド膜と、MR素子とを含
み、スライダ上に設けられており、第1の磁気シールド
膜及び第2の磁気シールド膜は間隔を隔てて対向して配
置される共に電気的に結合されて電気回路を構成してお
り、MR素子は第1の磁気シールド膜と第2の磁気シー
ルド膜との間に配置され第1の磁気シールド膜及び第2
の磁気シールド膜によって構成される電気回路に流れる
電流の生じる磁界がバイアス磁界として印加されるか
ら、第1の磁気シールド膜及び第2の磁気シールド膜を
バイアス磁界発生手段として兼用し、従来のシャットバ
イアス方式で必須であったバイアス導体膜を省略でき、
構造が簡単で、金属拡散によるMR素子の特性劣化を生
じることのない薄膜磁気ヘッドを提供できる。
As described above, the present invention is a thin film magnetic head having a slider and a read magnetic conversion element, wherein the read magnetic conversion element includes a first magnetic shield film and a second magnetic shield film. Magnetic shield film and an MR element are provided on the slider, and the first magnetic shield film and the second magnetic shield film are arranged facing each other with a space therebetween and are electrically coupled together. The MR element is arranged between the first magnetic shield film and the second magnetic shield film, and the MR element is arranged between the first magnetic shield film and the second magnetic shield film.
Since the magnetic field generated by the current flowing in the electric circuit constituted by the magnetic shield film is applied as the bias magnetic field, the first magnetic shield film and the second magnetic shield film are also used as the bias magnetic field generating means, and the conventional shut-off device is used. The bias conductor film, which was essential in the bias method, can be omitted,
It is possible to provide a thin film magnetic head which has a simple structure and does not cause deterioration of the characteristics of the MR element due to metal diffusion.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る薄膜磁気ヘッドを構成する読み出
し用磁気変換素子部分をモデル化して示す斜視図であ
る。
FIG. 1 is a modeled perspective view showing a read magnetic conversion element portion constituting a thin-film magnetic head according to the present invention.

【図2】本発明に係る薄膜磁気ヘッドを構成する読み出
し用磁気変換素子部分をモデル化して示す断面図であ
る。
FIG. 2 is a cross-sectional view showing a model of a magnetic conversion element for reading which constitutes a thin film magnetic head according to the present invention.

【図3】本発明に係る薄膜磁気ヘッドの具体的な実施例
を示す断面図である。
FIG. 3 is a sectional view showing a specific example of a thin film magnetic head according to the present invention.

【符号の説明】[Explanation of symbols]

1 スライダ 2 読み出し用磁気変換素子 21 第1の磁気シールド膜 22 第2の磁気シールド膜 23 MR素子 24、25 磁気シールド膜 3 書き込み用磁気変換素子 DESCRIPTION OF SYMBOLS 1 slider 2 magnetic read element for reading 21 first magnetic shield film 22 second magnetic shield film 23 MR element 24, 25 magnetic shield film 3 magnetic read element for writing

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 スライダと、読み出し用磁気変換素子と
を有する薄膜磁気ヘッドであって、 前記読み出し用磁気変換素子は、第1の磁気シールド膜
と、第2の磁気シールド膜と、磁気抵抗効果素子とを含
み、前記スライダ上に設けられており、 前記第1の磁気シールド膜及び前記第2の磁気シールド
膜は、間隔を隔てて対向して配置される共に、互いに電
気的に結合されて電気回路を構成しており、 前記磁気抵抗効果素子は、前記第1の磁気シールド膜と
前記第2の磁気シールド膜との間に配置され、前記電気
回路に流れる電流の生じる磁界がバイアス磁界として印
加される薄膜磁気ヘッド。
1. A thin-film magnetic head having a slider and a read magnetic conversion element, wherein the read magnetic conversion element includes a first magnetic shield film, a second magnetic shield film, and a magnetoresistive effect. An element and is provided on the slider, and the first magnetic shield film and the second magnetic shield film are arranged to face each other with a space therebetween, and are electrically coupled to each other. An electric circuit is configured, and the magnetoresistive effect element is disposed between the first magnetic shield film and the second magnetic shield film, and a magnetic field generated by a current flowing in the electric circuit serves as a bias magnetic field. Applied thin film magnetic head.
JP9385792A 1992-03-19 1992-03-19 Thin film magnetic head Withdrawn JPH05266435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9385792A JPH05266435A (en) 1992-03-19 1992-03-19 Thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9385792A JPH05266435A (en) 1992-03-19 1992-03-19 Thin film magnetic head

Publications (1)

Publication Number Publication Date
JPH05266435A true JPH05266435A (en) 1993-10-15

Family

ID=14094103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9385792A Withdrawn JPH05266435A (en) 1992-03-19 1992-03-19 Thin film magnetic head

Country Status (1)

Country Link
JP (1) JPH05266435A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7379277B2 (en) * 2005-06-30 2008-05-27 Seagate Technology Llc Reader shield/electrode structure for improved stray field and electrical performance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7379277B2 (en) * 2005-06-30 2008-05-27 Seagate Technology Llc Reader shield/electrode structure for improved stray field and electrical performance
US8059370B2 (en) 2005-06-30 2011-11-15 Seagate Technology Llc Reader shield/electrode structure

Similar Documents

Publication Publication Date Title
US5218497A (en) Magnetic recording-reproducing apparatus and magnetoresistive head having two or more magnetoresistive films for use therewith
US4734644A (en) Flux cancelling yoke type magnetic transducer head
JPH0473201B2 (en)
KR0145034B1 (en) Peak enhanced magnetoresistive read transducer
JPH07176019A (en) Flat magnetoresistance head
JP2662334B2 (en) Thin film magnetic head
JP2000011331A (en) Magnetoresistive element and thin film magnetic head
JPH09274712A (en) Magnetic head
JPH05266435A (en) Thin film magnetic head
JP3209290B2 (en) Thin film magnetic head and magnetic disk drive
JPH1125425A (en) Magnetic head
JPH05266439A (en) Thin film magnetic head
JP3160947B2 (en) Magnetoresistive magnetic head
JPS6224848B2 (en)
JPS61134913A (en) Magnetoresistance type thin film head
JP3565925B2 (en) Magnetoresistive head
JPH0528436A (en) Magneto-resistance effect type head
JPS61196418A (en) Thin film magnetic head
JPH06203332A (en) Compoite type thin-film magnetic head
JPH05334628A (en) Thin film magnetic head
JPH0572642B2 (en)
JPH0426908A (en) Magneto-resistance effect type head
JPS6371914A (en) Reproducing head
JPH0744826A (en) Thin film mr head
JPH05217125A (en) Thin film magnetic head

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990608