JPH0528436A - Magneto-resistance effect type head - Google Patents

Magneto-resistance effect type head

Info

Publication number
JPH0528436A
JPH0528436A JP3179741A JP17974191A JPH0528436A JP H0528436 A JPH0528436 A JP H0528436A JP 3179741 A JP3179741 A JP 3179741A JP 17974191 A JP17974191 A JP 17974191A JP H0528436 A JPH0528436 A JP H0528436A
Authority
JP
Japan
Prior art keywords
effect element
magnetic
magnetoresistive
layer
bias layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3179741A
Other languages
Japanese (ja)
Inventor
Hitoshi Kanai
均 金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3179741A priority Critical patent/JPH0528436A/en
Publication of JPH0528436A publication Critical patent/JPH0528436A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Abstract

PURPOSE:To obtain stable reproduced output by forming a magneto-resistance effect element to a prescribed rectangular shape and exactly forming the width in the direction orthogonal with the current direction thereof to a design value. CONSTITUTION:The magneto-resistance effect element 1 and a bias layer 3 of a ferromagnetic material are laminated via a nonmagnetic metallic layer 2 held therebetween and a sensor current J is passed thereto through a conductor layer 4. A bias magnetic field is impressed to the effect element 1 by the magnetic field formed in the bias layer 3 by this current J. The effect element 1 is formed to the prescribed rectangular shape and the bias layer 3 is formed to project to the side of the surface facing a magnetic recording medium from the width h of the direction orthogonal with the current direction of the effect element 1. The bias layer 3 having the projecting part 3a exposed to the surface facing the magnetic recording medium is formed as the path for propagation of the signal magnetic fields from the magnetic recording medium.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、磁気ディスク装置や
磁気テープ装置などに用いる薄膜磁気ヘッド、特に磁気
抵抗効果型ヘッドに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head used in a magnetic disk device or a magnetic tape device, and more particularly to a magnetoresistive head.

【0002】[0002]

【従来の技術】近年、コンピュータシステムの外部記憶
装置である磁気ディスク装置の小型化・大容量化に伴
い、磁気ディスク装置で用いる薄膜磁気ヘッドの高性能
化が要求されている。この要求を満足させるものとし
て、磁気ディスクの回転速度に依存せずに高出力が得ら
れる磁気抵抗効果型ヘッドが注目されている。
2. Description of the Related Art In recent years, with the miniaturization and increase in capacity of magnetic disk devices, which are external storage devices of computer systems, there has been a demand for higher performance of thin-film magnetic heads used in magnetic disk devices. In order to satisfy this demand, attention has been paid to a magnetoresistive head which can obtain a high output without depending on the rotation speed of a magnetic disk.

【0003】図5は従来の磁気抵抗効果型ヘッドの要部
を拡大して示した斜視図、図6はその側断面図であり、
8はニッケル鉄(NiFe)などの強磁性体からなる矩形の
磁気抵抗効果素子、9はチタン(Ti)、タングステン
(W)、またはモリブデン(Mo)などからなる非磁性金属
層、10はコバルト(Co)系非晶質磁性膜あるいはニッケ
ル・鉄・ロジウム(NiFeRh)磁性膜または窒化鉄膜(FeN)
などの強磁性体膜からなるバイアス層であり、これらは
スパッタリングなどの真空蒸着技術により順次積層形成
され、磁気ディスクとの対向面14において端部が揃っ
て形成されている。
FIG. 5 is an enlarged perspective view of a main portion of a conventional magnetoresistive head, and FIG. 6 is a side sectional view thereof.
8 is a rectangular magnetoresistive element made of a ferromagnetic material such as nickel iron (NiFe), 9 is a non-magnetic metal layer made of titanium (Ti), tungsten (W), molybdenum (Mo) or the like, and 10 is cobalt ( Co) type amorphous magnetic film or nickel / iron / rhodium (NiFeRh) magnetic film or iron nitride film (FeN)
Is a bias layer made of a ferromagnetic film, and these are sequentially laminated by a vacuum evaporation technique such as sputtering, and end portions thereof are formed on the surface 14 facing the magnetic disk.

【0004】非磁性金属層9は、磁気抵抗効果素子8と
バイアス層10との間で磁気交換結合を避けるために設
けたスペーサの役目をなす。11は金(Au)膜からなる引
き出し導体層、12は非磁性絶縁層、13a,13bは
ニッケル鉄(NiFe)などの強磁性体からなる磁気シール
ド層である。
The nonmagnetic metal layer 9 serves as a spacer provided between the magnetoresistive effect element 8 and the bias layer 10 in order to avoid magnetic exchange coupling. Reference numeral 11 is a lead conductor layer made of a gold (Au) film, 12 is a non-magnetic insulating layer, and 13a and 13b are magnetic shield layers made of a ferromagnetic material such as nickel iron (NiFe).

【0005】磁気抵抗効果素子8およびバイアス層10
は、その長手方向(y軸方向)に磁化容易軸が一致する
ように矩形に形成されている。引き出し導体層11は、
磁気抵抗効果素子8の長手方向に対して所定幅(磁気デ
ィスクのトラック幅に相当)で切除されて、磁気抵抗効
果素子8の両端部に接合している。
Magnetoresistive element 8 and bias layer 10
Is formed in a rectangular shape so that the easy axis of magnetization coincides with its longitudinal direction (y-axis direction). The lead conductor layer 11 is
The magnetoresistive effect element 8 is cut with a predetermined width (corresponding to the track width of the magnetic disk) in the longitudinal direction and joined to both ends of the magnetoresistive effect element 8.

【0006】磁気抵抗効果素子8,非磁性金属層9,バ
イアス層10,および引き出し導体層11は、二つの磁
気シールド層13a,13bの間(再生ギャップに相
当)に配置されるが、非磁性絶縁層12を介して磁気シ
ールド層13a,13bと電気的に絶縁されている。こ
れらは、たとえば磁気シールド層13a側から順次積層
され、さらに、図6に示すように、磁気ディスクとの対
向面14が、点線で示す寸法からラッピング加工によっ
て、磁気抵抗効果素子8の電流方向と直交する方向の幅
(高さ)hが所定値になるように加工されて磁気抵抗効
果型ヘッドが形成される。
The magnetoresistive effect element 8, the non-magnetic metal layer 9, the bias layer 10, and the lead conductor layer 11 are arranged between the two magnetic shield layers 13a and 13b (corresponding to a reproducing gap), but are non-magnetic. It is electrically insulated from the magnetic shield layers 13 a and 13 b via the insulating layer 12. These are sequentially laminated, for example, from the magnetic shield layer 13a side, and further, as shown in FIG. 6, the surface 14 facing the magnetic disk is formed by lapping from the dimension shown by the dotted line so that the current direction of the magnetoresistive element 8 is The magnetoresistive head is formed by processing so that the width (height) h in the orthogonal direction becomes a predetermined value.

【0007】センス電流jは、図5に示すように、引き
出し導体層11を通して磁気抵抗効果素子8と非磁性金
属層9およびバイアス層10に流れ、引き出し導体層1
1で画定される長方形の磁気抵抗効果素子8の信号検知
領域8aに流れる。また、非磁性金属層9を流れる電流
が作る磁界、ならびに磁気抵抗効果素子8と非磁性金属
層9を流れる電流が作る磁界により磁化したバイアス層
10からの漏洩磁界、の二つの磁界によって磁気抵抗効
果素子8はバイアス磁界を受ける。これにより、磁気抵
抗効果型ヘッドは、ヘッド真下の磁気ディスクからの信
号磁界に対して線型動作し、この信号検知領域8aの抵
抗変化に変換して、磁気ディスクに残留磁化の形で記録
された情報を読取る。
As shown in FIG. 5, the sense current j flows to the magnetoresistive effect element 8, the nonmagnetic metal layer 9 and the bias layer 10 through the lead conductor layer 11, and the lead conductor layer 1
It flows into the signal detection region 8a of the rectangular magnetoresistive effect element 8 defined by 1. Further, the magnetic resistance is generated by two magnetic fields, that is, a magnetic field generated by a current flowing through the nonmagnetic metal layer 9 and a leakage magnetic field from the bias layer 10 magnetized by the magnetic field generated by the current flowing through the magnetoresistive element 8 and the nonmagnetic metal layer 9. The effect element 8 receives a bias magnetic field. As a result, the magnetoresistive head operates linearly with respect to the signal magnetic field from the magnetic disk directly under the head, converts it into a resistance change of the signal detection area 8a, and records it on the magnetic disk in the form of residual magnetization. Read the information.

【0008】[0008]

【発明が解決しようとする課題】このような従来の磁気
抵抗効果型ヘッドにおいては、前記磁気抵抗効果素子8
の電流方向と直交する方向の幅(高さ)hは、ラッピン
グ加工により規定されるものであるが、この幅hは3〜
5μmという小さな値であるのに対し、ラッピング加工
精度は±1μm程度の加工誤差があり、この誤差は前記
磁気抵抗効果素子8の幅hを規定するには影響が大き
く、この幅hを精度よく所望の値にすることは困難であ
った。このため磁気抵抗効果素子8の幅hの加工のばら
つきが磁気抵抗効果素子8の抵抗値のばらつきとなり、
これは磁気抵抗効果型ヘッド毎の再生出力に大きなばら
つきを生じるという問題があった。
In such a conventional magnetoresistive head, the magnetoresistive element 8 is used.
The width (height) h in the direction orthogonal to the current direction is defined by lapping.
Although the value is as small as 5 μm, the lapping accuracy has a processing error of about ± 1 μm, and this error has a great influence in defining the width h of the magnetoresistive effect element 8. It was difficult to obtain the desired value. Therefore, the variation in the processing of the width h of the magnetoresistive effect element 8 causes the variation in the resistance value of the magnetoresistive effect element 8,
This causes a problem that the reproduction output varies greatly among the magnetoresistive heads.

【0009】この発明は、磁気抵抗効果型ヘッドの磁気
ディスクとの対向面のラッピング加工誤差が、磁気抵抗
効果素子の電流方向と直交する方向の規定された幅(高
さ)hに影響を与えずに、正確な設定幅を形成すること
ができ、磁気抵抗効果素子の抵抗値のばらつきのない磁
気抵抗効果型ヘッドを提供することを目的とするもので
ある。
According to the present invention, the lapping processing error of the surface of the magnetoresistive head facing the magnetic disk affects the prescribed width (height) h of the magnetoresistive element in the direction orthogonal to the current direction. It is an object of the present invention to provide a magnetoresistive effect type head capable of forming an accurate set width without variation of the resistance value of the magnetoresistive effect element.

【0010】[0010]

【課題を解決するための手段】この発明は、前記課題を
解決するため、図1の(a)に示すように、非磁性金属
層2を挟んで磁気抵抗効果素子1と強磁性体からなるバ
イアス層3を積層し、これに導体層4を通してセンス電
流Jを流し、このセンス電流Jにより前記バイアス層3
が形成する磁界により前記磁気抵抗効果素子1にバイア
ス磁界を印加する磁気抵抗効果型ヘッドにおいて、磁気
抵抗効果素子1を所定の矩形状に形成し、バイアス層3
を、前記磁気抵抗効果素子1の電流方向と直交する方向
の幅hよりも磁気記録媒体との対向面側に突出させて形
成し、この磁気記録媒体との対向面に露出した突出部3
aを有するバイアス層3を、磁気記録媒体からの信号磁
界の伝播路として形成したことを特徴とする磁気抵抗効
果型ヘッドとしたものである。
In order to solve the above-mentioned problems, the present invention comprises a magnetoresistive element 1 and a ferromagnetic material with a non-magnetic metal layer 2 sandwiched therebetween, as shown in FIG. 1 (a). A bias layer 3 is laminated, and a sense current J is flown through the conductor layer 4, and the sense current J causes the bias layer 3 to pass through.
In the magnetoresistive head in which a bias magnetic field is applied to the magnetoresistive effect element 1 by the magnetic field formed by the magnetoresistive effect element 1, the magnetoresistive effect element 1 is formed in a predetermined rectangular shape, and the bias layer 3 is formed.
Of the magnetoresistive effect element 1 is formed so as to protrude toward the surface facing the magnetic recording medium more than the width h in the direction orthogonal to the current direction, and the protruding portion 3 exposed on the surface facing the magnetic recording medium.
A bias layer 3 having a is formed as a propagation path of a signal magnetic field from a magnetic recording medium to provide a magnetoresistive head.

【0011】また、図1の(b)に示すように、前記磁
気抵抗効果素子1の電流方向と直交する方向の幅hより
も磁気記録媒体との対向面側に突出させて形成したバイ
アス層3の突出部3aを、磁気抵抗効果素子1の信号検
知領域1aに近接した部分のみとしたことを特徴とする
磁気抵抗効果型ヘッドとしたものである。
Further, as shown in FIG. 1B, the bias layer formed so as to protrude toward the surface facing the magnetic recording medium beyond the width h of the magnetoresistive effect element 1 in the direction orthogonal to the current direction. 3 is a magnetoresistive head in which only the portion of the protruding portion 3a of the magnetoresistive effect element 3 is close to the signal detection region 1a of the magnetoresistive effect element 1.

【0012】[0012]

【作用】この発明によれば、磁気抵抗効果素子1をフォ
トリソグラフィ技術により所定の矩形に形成し、かつ、
その電流方向と直交する方向の幅hを設計値に正確に形
成し、バイアス層3を磁気記録媒体との対向面側に突出
して形成し、その突出した対向面側をラッピング加工し
て、バイアス層3を磁気記録媒体からの信号磁界の伝播
路としたものであるから、磁気抵抗効果素子1自体はラ
ッピング加工されることなく、フォトリソグラフィ技術
により正確に規定された電流方向と直交する方向の幅を
保持することができるので、磁気抵抗効果素子1の抵抗
値のばらつきがなくなり、磁気抵抗効果型ヘッド毎の再
生出力に大きなばらつきを生じるという問題がなくな
る。
According to the present invention, the magnetoresistive effect element 1 is formed into a predetermined rectangle by the photolithography technique, and
The width h in the direction orthogonal to the current direction is accurately formed to a design value, the bias layer 3 is formed so as to project toward the surface facing the magnetic recording medium, and the protruding facing surface is lapped to form the bias. Since the layer 3 is used as the propagation path of the signal magnetic field from the magnetic recording medium, the magnetoresistive effect element 1 itself is not lapped, and the magnetoresistive effect element 1 does not have a direction perpendicular to the current direction accurately defined by the photolithography technique. Since the width can be maintained, there is no variation in the resistance value of the magnetoresistive effect element 1, and there is no problem that the reproduction output varies greatly among the magnetoresistive effect heads.

【0013】[0013]

【実施例】図2はこの発明の一実施例の概略を示す斜視
図、図3はその要部の側断面図である。これらの図にお
いて、1はニッケル鉄(NiFe)などの強磁性体からなる
矩形の磁気抵抗効果素子であり、フォトリソグラフィ技
術により正確に矩形に形成され、その電流方向と直交す
る方向の幅hが設計値に正確に形成されている。2はチ
タン(Ti)、タングステン(W)、またはモリブデン(Mo)
などからなる非磁性金属層、3はコバルト(Co)系非晶質
磁性膜あるいはニッケル・鉄・ロジウム(NiFeRh)磁性膜
または窒化鉄膜(FeN) などの強磁性体膜からなるバイア
ス層であり、このバイアス層3は前記磁気抵抗効果素子
1の電流方向と直交する方向の幅hよりも大きく作成さ
れ、磁気ディスクとの対向面側に突出している。
FIG. 2 is a perspective view showing the outline of an embodiment of the present invention, and FIG. 3 is a side sectional view of the main part thereof. In these figures, reference numeral 1 denotes a rectangular magnetoresistive element made of a ferromagnetic material such as nickel iron (NiFe), which is accurately formed in a rectangular shape by photolithography and has a width h in a direction orthogonal to the current direction. Accurately formed to the design value. 2 is titanium (Ti), tungsten (W), or molybdenum (Mo)
A non-magnetic metal layer 3 made of, for example, a cobalt (Co) -based amorphous magnetic film, or a bias layer made of a nickel, iron, rhodium (NiFeRh) magnetic film, or a ferromagnetic film such as an iron nitride film (FeN). The bias layer 3 is made larger than the width h of the magnetoresistive effect element 1 in the direction orthogonal to the current direction, and protrudes toward the surface facing the magnetic disk.

【0014】これら磁気抵抗効果素子1と非磁性金属層
2とバイアス層3は積層構造となっており、非磁性金属
層2は磁気抵抗効果素子1とバイアス層3が磁気交換結
合を避けるために設けたスペーサの役目をなす。4は金
(Au)からなる引き出し導体層、5は非磁性絶縁層、6
a,6bはNiFeなどの強磁性体膜からなる磁気シー
ルド層である。
The magnetoresistive effect element 1, the non-magnetic metal layer 2 and the bias layer 3 have a laminated structure, and the non-magnetic metal layer 2 prevents the magnetoresistive effect element 1 and the bias layer 3 from magnetic exchange coupling. It acts as a spacer provided. 4 is gold
(Au) lead conductor layer, 5 is a non-magnetic insulating layer, 6
Reference numerals a and 6b are magnetic shield layers made of a ferromagnetic film such as NiFe.

【0015】磁気抵抗効果素子1およびバイアス層3
は、その長手方向(y軸方向)に磁化容易軸が一致する
ように矩形に形成されている。磁気抵抗効果素子1の電
流方向と直交する方向の幅hは設計された所望の値に設
定されるが、バイアス層3の幅は前記幅hよりも大きく
なっている。引き出し導体層4は、磁気抵抗効果素子1
の長手方向に対して所定幅で切除されて、磁気抵抗効果
素子1の両端部に接合されている。
Magnetoresistive element 1 and bias layer 3
Is formed in a rectangular shape so that the easy axis of magnetization coincides with its longitudinal direction (y-axis direction). The width h of the magnetoresistive effect element 1 in the direction orthogonal to the current direction is set to a desired designed value, but the width of the bias layer 3 is larger than the width h. The lead conductor layer 4 is the magnetoresistive effect element 1.
Is cut to a predetermined width in the longitudinal direction and is joined to both ends of the magnetoresistive effect element 1.

【0016】磁気抵抗効果素子1,非磁性金属層2,バ
イアス層3,および引き出し導体層4は、二つの磁気シ
ールド層6a,6bの間(再生ギャップに相当)に配置
されるが、非磁性絶縁層5を介して磁気シールド層6
a,6bと電気的に絶縁されている。これらは、たとえ
ば磁気シールド層6a側から順次積層され、さらに、図
3に示すように、磁気ディスクとの対向面7はバイアス
層3の突出部3aのみが露出するようにラッピング加工
され、磁気ディスクとの対向面に露出したバイアス層3
が磁気ディスクからの信号磁界の伝播路を形成するよう
にして、磁気抵抗効果型ヘッドが形成される。
The magnetoresistive effect element 1, the nonmagnetic metal layer 2, the bias layer 3, and the lead conductor layer 4 are arranged between the two magnetic shield layers 6a and 6b (corresponding to the reproducing gap), but are nonmagnetic. Magnetic shield layer 6 through insulating layer 5
It is electrically insulated from a and 6b. These are sequentially laminated, for example, from the magnetic shield layer 6a side, and further, as shown in FIG. 3, the surface 7 facing the magnetic disk is lapped so that only the protruding portion 3a of the bias layer 3 is exposed, and the magnetic disk is formed. Bias layer 3 exposed on the surface opposite to
Forms a propagation path for a signal magnetic field from the magnetic disk to form a magnetoresistive head.

【0017】センス電流jは、図2に示すように、引き
出し導体層4を通して磁気抵抗効果素子1と非磁性金属
層2およびバイアス層3に流れ、引き出し導体層4で画
定される長方形の磁気抵抗効果素子1の信号検知領域1
aに流れる。また、非磁性金属層2を流れる電流が作る
磁界、ならびに磁気抵抗効果素子1と非磁性金属層2を
流れる電流が作る磁界とにより磁化したバイアス層3か
らの漏洩磁界、の二つの磁界によって磁気抵抗効果素子
1はバイアス磁界を受ける。これにより、磁気抵抗効果
型ヘッドはヘッド真下の磁気ディスクからの信号磁界に
対して線型動作し、この信号検知領域1aの抵抗変化に
変換して磁気ディスクに残留磁化の形で記録された情報
を読取る。
As shown in FIG. 2, the sense current j flows to the magnetoresistive effect element 1, the nonmagnetic metal layer 2 and the bias layer 3 through the lead conductor layer 4, and has a rectangular magnetoresistance defined by the lead conductor layer 4. Signal detection area 1 of effect element 1
flow to a. In addition, the magnetic field generated by the current flowing through the non-magnetic metal layer 2 and the magnetic field generated by the current flowing through the magnetoresistive element 1 and the non-magnetic metal layer 2 leaks from the bias layer 3 magnetized by two magnetic fields. The resistance effect element 1 receives a bias magnetic field. As a result, the magnetoresistive head operates linearly with respect to the signal magnetic field from the magnetic disk directly below the head, converts the resistance change of the signal detection area 1a into the information recorded in the magnetic disk in the form of residual magnetization. Read.

【0018】図4はこの発明の他の実施例の概略を示す
斜視図であり、前記磁気抵抗効果素子1の電流方向と直
交する方向の幅hよりも磁気ディスクとの対向面側に突
出させて形成したバイアス層3の突出部3aを、磁気抵
抗効果素子1の信号検知領域1aに近接した部分のみと
し、その他の磁気ディスクとの対向部分を後退させて形
成したものである。このようにした場合は、磁気ディス
クの、磁気抵抗効果素子1の信号検知領域1aに隣接し
た、記録トラックからのサイドクロストークを低減する
利点がある。また、この発明の磁気抵抗効果型ヘッド
は、磁気テープにも適用可能である。
FIG. 4 is a perspective view showing the outline of another embodiment of the present invention, in which the magnetoresistive effect element 1 is projected toward the surface facing the magnetic disk more than the width h in the direction orthogonal to the current direction. The protruding portion 3a of the bias layer 3 formed as described above is formed only in the portion close to the signal detection region 1a of the magnetoresistive effect element 1, and the portion facing the other magnetic disk is retracted. In this case, there is an advantage of reducing side crosstalk from the recording track adjacent to the signal detection area 1a of the magnetoresistive effect element 1 of the magnetic disk. The magnetoresistive head of the present invention can also be applied to a magnetic tape.

【0019】[0019]

【発明の効果】この発明の磁気抵抗効果型ヘッドは、磁
気抵抗効果素子を例えばフォトリソグラフィ技術により
所定の矩形に形成し、かつ、その電流方向と直交する方
向の幅を設計値に正確に形成し、バイアス層を磁気記録
媒体との対向面側に突出して形成し、その突出した対向
面側をラッピング加工して、バイアス層を磁気記録媒体
からの信号磁界の伝播路としたものであるから、磁気抵
抗効果素子自体はラッピング加工されることなく、フォ
トリソグラフィ技術により正確に規定された電流方向と
直交する方向の幅を保持することができるので、磁気抵
抗効果素子の抵抗値のばらつきがなくなり、磁気抵抗効
果型ヘッド毎の再生出力に大きなばらつきを生じるとい
う問題がなくなり、安定した再生出力が得られるもので
ある。
According to the magnetoresistive head of the present invention, the magnetoresistive element is formed into a predetermined rectangle by, for example, the photolithography technique, and the width in the direction orthogonal to the current direction is accurately formed to the designed value. Then, the bias layer is formed so as to project toward the surface facing the magnetic recording medium, and the protruding facing surface side is lapped so that the bias layer serves as the propagation path of the signal magnetic field from the magnetic recording medium. Since the magnetoresistive effect element itself can maintain the width in the direction orthogonal to the current direction accurately defined by the photolithography technology without being subjected to lapping processing, there is no variation in the resistance value of the magnetoresistive effect element. The problem that a large variation occurs in the reproduction output for each magnetoresistive head is eliminated, and a stable reproduction output can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の磁気抵抗効果型ヘッドの概略を示す
斜視図である。
FIG. 1 is a perspective view showing an outline of a magnetoresistive head of the present invention.

【図2】この発明の磁気抵抗効果型ヘッドの一実施例の
概略を示す斜視図である。
FIG. 2 is a perspective view schematically showing an embodiment of a magnetoresistive head of the present invention.

【図3】この発明の磁気抵抗効果型ヘッドの要部の側断
面図である。
FIG. 3 is a side sectional view of a main part of the magnetoresistive head of the present invention.

【図4】この発明の磁気抵抗効果型ヘッドの他の実施例
の概略を示す斜視図である。
FIG. 4 is a perspective view showing the outline of another embodiment of the magnetoresistive head of the present invention.

【図5】従来の磁気抵抗効果型ヘッドの概略を示す斜視
図である。
FIG. 5 is a perspective view showing an outline of a conventional magnetoresistive head.

【図6】従来の磁気抵抗効果型ヘッドの要部の側断面図
である。
FIG. 6 is a side sectional view of a main part of a conventional magnetoresistive head.

【符号の説明】[Explanation of symbols]

1 磁気抵抗効果素子 1a 信号検知領域 2 非磁性金属層 3 バイアス層 3a 突出部 4 引き出し導体層 5 非磁性絶縁層 6a,6b 磁気シールド層 7 磁気ディスクとの対向面 8 磁気抵抗効果素子 8a 信号検知領域 9 非磁性金属層 10 バイアス層 11 引き出し導体層 12 非磁性絶縁層 13a,13b 磁気シールド層 14 磁気ディスクとの対向面 1 Magnetoresistive element 1a Signal detection area 2 Non-magnetic metal layer 3 Bias layer 3a protrusion 4 Lead conductor layer 5 Non-magnetic insulating layer 6a, 6b Magnetic shield layer 7 Face to face magnetic disk 8 Magnetoresistive effect element 8a Signal detection area 9 Non-magnetic metal layer 10 Bias layer 11 Lead conductor layer 12 Non-magnetic insulating layer 13a, 13b Magnetic shield layer 14 Magnetic disk facing surface

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】非磁性金属層(2)を挟んで磁気抵抗効果
素子(1)と強磁性体からなるバイアス層(3)を積層
し、これに導体層(4)を通してセンス電流Jを流し、
このセンス電流Jにより前記バイアス層(3)が形成す
る磁界により前記磁気抵抗効果素子(1)にバイアス磁
界を印加する磁気抵抗効果型ヘッドにおいて、磁気抵抗
効果素子(1)を所定の矩形状に形成し、バイアス層
(3)を、前記磁気抵抗効果素子(1)の電流方向と直
交する方向の幅hよりも磁気記録媒体との対向面側に突
出させて形成し、この磁気記録媒体との対向面に露出し
た突出部(3a)を有するバイアス層(3)を、磁気記
録媒体からの信号磁界の伝播路として形成したことを特
徴とする磁気抵抗効果型ヘッド。
1. A magnetoresistive element (1) and a bias layer (3) made of a ferromagnetic material are laminated with a non-magnetic metal layer (2) sandwiched therebetween, and a sense current J is passed through the conductor layer (4). ,
In the magnetoresistive head in which a bias magnetic field is applied to the magnetoresistive effect element (1) by the magnetic field formed by the bias layer (3) by the sense current J, the magnetoresistive effect element (1) is formed into a predetermined rectangular shape. The bias layer (3) is formed so as to protrude toward the surface facing the magnetic recording medium more than the width h of the magnetoresistive effect element (1) in the direction orthogonal to the current direction. 2. A magnetoresistive head having a bias layer (3) having a protrusion (3a) exposed on the opposite surface thereof is formed as a propagation path of a signal magnetic field from a magnetic recording medium.
【請求項2】前記磁気抵抗効果素子(1)の電流方向と
直交する方向の幅hよりも磁気記録媒体との対向面側に
突出させて形成した前記バイアス層(3)の突出部(3
a)を、磁気抵抗効果素子(1)の信号検知領域(1
a)に近接した部分のみとしたことを特徴とする請求項
1に記載の磁気抵抗効果型ヘッド。
2. A protruding portion (3) of the bias layer (3) which is formed so as to protrude toward a surface facing a magnetic recording medium more than a width h of the magnetoresistive effect element (1) in a direction orthogonal to a current direction.
a) is the signal detection area (1) of the magnetoresistive effect element (1)
The magnetoresistive head according to claim 1, wherein only a portion close to (a) is provided.
JP3179741A 1991-07-19 1991-07-19 Magneto-resistance effect type head Withdrawn JPH0528436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3179741A JPH0528436A (en) 1991-07-19 1991-07-19 Magneto-resistance effect type head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3179741A JPH0528436A (en) 1991-07-19 1991-07-19 Magneto-resistance effect type head

Publications (1)

Publication Number Publication Date
JPH0528436A true JPH0528436A (en) 1993-02-05

Family

ID=16071059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3179741A Withdrawn JPH0528436A (en) 1991-07-19 1991-07-19 Magneto-resistance effect type head

Country Status (1)

Country Link
JP (1) JPH0528436A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0694911A2 (en) * 1994-07-29 1996-01-31 Sony Corporation Magnetic resistance type magnetic head and composite type magnetic head for recording/reproducing, and production method for the same
US5661621A (en) * 1994-09-08 1997-08-26 Fujitsu Limited Magnetoresistive head
US6074535A (en) * 1994-09-09 2000-06-13 Fujitsu Limited Magnetoresistive head, method of fabricating the same and magnetic recording apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0694911A2 (en) * 1994-07-29 1996-01-31 Sony Corporation Magnetic resistance type magnetic head and composite type magnetic head for recording/reproducing, and production method for the same
EP0694911A3 (en) * 1994-07-29 1996-04-24 Sony Corp Magnetic resistance type magnetic head and composite type magnetic head for recording/reproducing, and production method for the same
US5661621A (en) * 1994-09-08 1997-08-26 Fujitsu Limited Magnetoresistive head
US6074535A (en) * 1994-09-09 2000-06-13 Fujitsu Limited Magnetoresistive head, method of fabricating the same and magnetic recording apparatus

Similar Documents

Publication Publication Date Title
US5218497A (en) Magnetic recording-reproducing apparatus and magnetoresistive head having two or more magnetoresistive films for use therewith
US5668686A (en) Magneto-resistive reading head with reduced side-lobe
US5406433A (en) Dual magnetoresistive head for reproducing very narrow track width short wavelength data
JPS6138525B2 (en)
JP3551099B2 (en) Thin-film magnetic head for magnetic tape device
JPH1186218A (en) Thin film magnetic head
JP2000163718A (en) Yoke type magnetoresistive head, yoke type magnetoresistive composite thin film head and magnetic storage device
KR0145034B1 (en) Peak enhanced magnetoresistive read transducer
EP0372420B1 (en) Magnetic recording-reproducing apparatus and magnetoresistive head for use therewith
JPH0528436A (en) Magneto-resistance effect type head
JP2662334B2 (en) Thin film magnetic head
Valstyn et al. Performance of single-turn film heads
JPH11175925A (en) Magnetic reluctance effect type element and magnetic recording and reproducing device
JP3209290B2 (en) Thin film magnetic head and magnetic disk drive
JPH0473210B2 (en)
JP3175176B2 (en) Magnetoresistive head
JPH08203032A (en) Magneto-resistance effect reproducing head
JP3082003B2 (en) Method of manufacturing magnetoresistive head
JPH04298809A (en) Magnetic head
JPH0546946A (en) Magnetoresistance effect type head
JPH0544090B2 (en)
JPH05266435A (en) Thin film magnetic head
JPS60115014A (en) Magnetic head for vertical magnetization
JPH0115927B2 (en)
JPH06187615A (en) Magneto-resistance effect reproduction head

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19981008