JPS6371914A - Reproducing head - Google Patents
Reproducing headInfo
- Publication number
- JPS6371914A JPS6371914A JP21575586A JP21575586A JPS6371914A JP S6371914 A JPS6371914 A JP S6371914A JP 21575586 A JP21575586 A JP 21575586A JP 21575586 A JP21575586 A JP 21575586A JP S6371914 A JPS6371914 A JP S6371914A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magneto
- resistance effect
- head
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 33
- 230000000694 effects Effects 0.000 claims abstract description 12
- 230000004907 flux Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 239000000696 magnetic material Substances 0.000 claims description 7
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 230000005415 magnetization Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 2
- 239000011162 core material Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 8
- 239000011529 conductive interlayer Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 229910003962 NiZn Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、薄膜金属磁性材料の磁気抵抗効果を利用した
ヨーク型再生磁気ヘッドの構造に係り、特に良好な再生
効率及び再生特性を有する該ヘッドの構造しこ関するも
のである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to the structure of a yoke-type reproducing magnetic head that utilizes the magnetoresistive effect of a thin film metal magnetic material, and particularly relates to a structure of a yoke-type reproducing magnetic head that utilizes the magnetoresistive effect of a thin film metal magnetic material, and particularly relates to a structure of a yoke-type reproducing magnetic head that utilizes the magnetoresistive effect of a thin film metal magnetic material, and particularly relates to a structure of a yoke-type reproducing magnetic head that utilizes the magnetoresistive effect of a thin film metal magnetic material. This concerns the structure of the head.
従来のヨーク型磁気抵抗効果再生ヘッドは特開昭59−
112422号公報に記載のように、磁気抵抗効果素子
が媒体摺接面に露出しない構造となっており、同ヘッド
の信頼性は非常に高いものとなっていた。The conventional yoke-type magnetoresistive reproducing head was developed in Japanese Patent Application Laid-Open No. 1986-
As described in Japanese Patent No. 112422, the head had a structure in which the magnetoresistive element was not exposed to the sliding contact surface of the medium, and the reliability of the head was extremely high.
しかし、再生効率の点については配慮されておらず、同
ヘッドを使用した場合の再生出力について間層があった
。However, no consideration was given to playback efficiency, and there were discrepancies in the playback output when using the same head.
上記従来技術においては、再生効率及びバルクハウゼン
ノイズの抑圧等について配慮がなされておらず、再生特
性の点について問題があった。以下、第3〜4図を用い
て再生効率について詳細に説明する。第3図は従来のヨ
ーク型磁気抵抗効果型ヘッドの概略側断面図で、1は下
部コア、2は金属磁性体から成る上部コア、3は磁気ギ
ャップ。In the above-mentioned conventional technology, no consideration was given to reproduction efficiency, suppression of Barkhausen noise, etc., and there were problems with respect to reproduction characteristics. Hereinafter, the regeneration efficiency will be explained in detail using FIGS. 3 and 4. FIG. 3 is a schematic side sectional view of a conventional yoke type magnetoresistive head, in which 1 is a lower core, 2 is an upper core made of a magnetic metal, and 3 is a magnetic gap.
4は非磁性層間材、5は非導電性層間材、6は磁気抵抗
効果素子、7は磁気抵抗効果素子を適当な動作点塾こバ
イアスするための手段、8は媒体摺接面である。4 is a non-magnetic interlayer material, 5 is a non-conductive interlayer material, 6 is a magnetoresistive element, 7 is means for biasing the magnetoresistive element to an appropriate operating point, and 8 is a medium sliding contact surface.
第4図は、第3図に示した再生磁気ヘッドの等価回路で
あり、Rgはギヤツブ部磁気抵抗、Reはコア部1,2
の磁気抵抗、R,、RA’は第1図中A、A’で示した
破線円内部における磁気抵抗、RMRは磁気抵抗効果素
子7の磁気抵抗である。なお、一般的に上下コアの磁気
抵抗はR,、RA’及びRcに比べて非常に小さい。同
等価回路において、再生効率ηは(1)式で示される。FIG. 4 is an equivalent circuit of the reproducing magnetic head shown in FIG. 3, where Rg is the gear part magnetic resistance and Re is the core part 1, 2.
The magnetic resistance R, RA' is the magnetic resistance inside the broken circle indicated by A and A' in FIG. 1, and RMR is the magnetic resistance of the magnetoresistive element 7. Note that the magnetic resistance of the upper and lower cores is generally much smaller than R, RA', and Rc. In the equivalent circuit, the regeneration efficiency η is expressed by equation (1).
更にRC<< (RA+RA’)+RMRより従来構造
においては[(RA+RA’)+RMR]/Rgは4〜
5程度であり、η20.2であった。通常の巻線型ヘッ
ドにおいてはη?0.6程度であり。Furthermore, since RC<<(RA+RA')+RMR, in the conventional structure, [(RA+RA')+RMR]/Rg is 4~
5, and η20.2. In a normal wire-wound head, η? It is about 0.6.
従来のヨーク型磁気抵抗効果型ヘッドの再生効率は非常
に低かった。The reproduction efficiency of conventional yoke-type magnetoresistive heads has been extremely low.
、ヨーク型磁気抵抗効果型ヘッドの再生効率の向上は、
第・1図に示したRA+ RA’y RMRを小さくす
ることにより達成される。その具体的手段としては、第
1図に示した構成のヨーク型磁気抵抗効果型ヘッドがあ
る。第1図は本発明により成るヨーク型磁気抵抗効果型
ヘッドの概略側断面図、第2図は同ヘッドの等価回路で
ある。図中10は基板、11は下部コア、12は上部コ
ア、13はギャップ、14は媒体摺動面、15は磁気抵
抗効果素子、16.17は上下コア11.12と電気的
絶縁をとるための非導電性層間材、18は非磁性層間材
である。第2図は同ヘッドの等価回路でRMR’は磁気
抵抗効果素子の磁気抵抗、Ro、REは第1図中、破線
円内で示したり、E部の磁気抵抗、RCはコアの磁気抵
抗、Rgはギヤツブ部磁気抵抗である。, the improvement of the reproduction efficiency of the yoke-type magnetoresistive head is
This is achieved by reducing RA+RA'y RMR shown in FIG. A specific means for this purpose is a yoke type magnetoresistive head having the configuration shown in FIG. FIG. 1 is a schematic side sectional view of a yoke type magnetoresistive head according to the present invention, and FIG. 2 is an equivalent circuit of the same head. In the figure, 10 is the substrate, 11 is the lower core, 12 is the upper core, 13 is the gap, 14 is the medium sliding surface, 15 is the magnetoresistive element, and 16.17 is for electrically insulating the upper and lower cores 11.12. 18 is a non-conductive interlayer material, and 18 is a nonmagnetic interlayer material. Figure 2 shows an equivalent circuit of the same head, where RMR' is the magnetoresistance of the magnetoresistive element, Ro and RE are shown in the broken circle in Figure 1, the magnetoresistance of the E part, RC is the magnetoresistance of the core, Rg is gear part magnetic resistance.
第1図に示した本発明により成る磁気抵抗効果型ヘッド
の再生効率η′は、第2図に示した等価回路を用いるこ
とにより、(1)式と同様(2)式で与えられる。The reproducing efficiency η' of the magnetoresistive head according to the present invention shown in FIG. 1 is given by equation (2) similar to equation (1) by using the equivalent circuit shown in FIG.
以下RMRとR’MR,R,とRo、 RA’とR+=
の大小関係について説明する。Below, RMR and R'MR, R, and Ro, RA' and R+=
We will explain the size relationship of .
” ) RMRとR’MRの大小関係について、磁気抵
抗効果素子6及び15の暎厚をχ、トラック巾方向の巾
をw、 トラック巾方向と垂直方向の巾をhとすると
L
RMR:μiw ・・ (3)
となる。”) Regarding the size relationship between RMR and R'MR, if the thickness of the magnetoresistive elements 6 and 15 is χ, the width in the track width direction is w, and the width in the direction perpendicular to the track width direction is h, then L RMR: μiw ・・(3) becomes.
(3)、(4)においてμは磁気抵抗効果素子6゜15
の透磁率である。In (3) and (4), μ is the magnetoresistive element 6°15
is the magnetic permeability of
1i)RAとRDの大小関係について、第3図における
北部コア5と磁気抵抗効果素子6との重なりrlJをp
、また第3図及び第1図における上部コア2,12と磁
気抵抗効果素子6゜15との距雛をQとすると
R,=μoPW ・・・(5)
Rc)=μ。hw ・・・ (6)となる。た
だし、(5)(6)式において、μ。は真RA’<1で
あることが示される。1i) Regarding the magnitude relationship between RA and RD, the overlap rlJ between the northern core 5 and the magnetoresistive element 6 in FIG.
, and if the distance between the upper cores 2, 12 and the magnetoresistive element 6°15 in FIGS. 3 and 1 is Q, then R,=μoPW (5) Rc)=μ. hw... (6). However, in equations (5) and (6), μ. It is shown that true RA'<1.
以上より となり、η〈η′となることがわかる。From the above It can be seen that η〈η′.
更に、第1図に示した上下コア11.12として非導電
性磁性材料を用いれば、非導伝性層間材16.17が不
要となり、更に再生効率は上昇する。Furthermore, if a non-conductive magnetic material is used for the upper and lower cores 11.12 shown in FIG. 1, the non-conductive interlayer material 16.17 will be unnecessary, and the regeneration efficiency will further increase.
以下本発明について実施例を用いて更に詳細に説明する
。The present invention will be described in more detail below using examples.
(実施例1)
第5図は本発明により成る第1の磁気抵抗効果型ヘッド
の概略側断面図である。図中20は基板兼下部コアであ
るNi−Znフェライト焼結体、21゜21′はCoN
bZrから成る上部コア(膜Q20μm)、22はパー
マロイ膜から成る磁気抵抗効果素子(膜厚0.05μf
f)、23.23’はSiO□膜から成る非導電性層間
材(膜厚;0.1μl11)、24は5in2膜から成
る磁気ギャップ(ギャップ長(0,3μm))、 25
は媒体摺動面、26は5i02膜から成る非磁性層間材
(膜厚;10μm)、27は磁気抵抗効果素子をバイア
スするためのAQ薄膜から成るコイル(膜厚;2μm)
である。(Embodiment 1) FIG. 5 is a schematic side sectional view of a first magnetoresistive head according to the present invention. In the figure, 20 is a Ni-Zn ferrite sintered body that serves as the substrate and lower core, and 21° and 21' are CoN.
The upper core (film Q: 20 μm) is made of bZr, and the magnetoresistive element 22 is made of a permalloy film (thickness: 0.05 μf).
f), 23.23' is a non-conductive interlayer material made of SiO□ film (film thickness: 0.1 μl11), 24 is a magnetic gap made of 5in2 film (gap length (0.3 μm)), 25
26 is a non-magnetic interlayer material made of a 5i02 film (thickness: 10 μm), and 27 is a coil made of an AQ thin film (thickness: 2 μm) for biasing the magnetoresistive element.
It is.
上部コア21.21’材であるCoNbZr膜はDC対
向スパッタリング法で、磁気抵抗効果素子材であるパー
マロイ膜は磁場中蒸着法で、層間材23゜23’、26
及びギャップ材であるSiO2膜はRFマグネトロンス
パッタリング法で、コイル27材であるAρ膜は真空蒸
着法で形成した。各部位のパターニングは通常のフォト
リソグラフィック技術を用いて行なった。また、上部コ
ア2 L、21’及び磁気抵抗効果素子22にはトラッ
ク巾方向(紙面垂直方向)を磁化容易軸とする一軸異方
性が付与されている。The CoNbZr film, which is the upper core material 21 and 21', is formed by DC facing sputtering, and the permalloy film, which is the magnetoresistive element material, is formed by evaporation in a magnetic field.
The SiO2 film, which is the gap material, was formed by RF magnetron sputtering, and the Aρ film, which is the coil 27 material, was formed by vacuum evaporation. Patterning of each part was performed using normal photolithographic technology. Furthermore, the upper cores 2L, 21' and the magnetoresistive element 22 are given uniaxial anisotropy with the track width direction (direction perpendicular to the plane of the paper) as the axis of easy magnetization.
本ヘッドのバイアス方法について以下に説明する。バイ
アスコイル27に通電(直流)することにより上部コア
、下部コアに磁束の流れが発生する。磁気抵抗効果素子
部22において、この磁束は同素子部の膜厚方向に流れ
る。その結果、磁気抵抗効果素子の磁化は膜厚方向に傾
き、最適動作点にバイアスされる。The biasing method for this head will be explained below. By applying current (direct current) to the bias coil 27, a flow of magnetic flux is generated between the upper core and the lower core. In the magnetoresistive element section 22, this magnetic flux flows in the film thickness direction of the element section. As a result, the magnetization of the magnetoresistive element is tilted in the film thickness direction and biased toward the optimum operating point.
以上説明した本ヘッドについて電磁変換特性を検討した
結果、従来ヘッドに比べ再生効率が約6dB向上してい
ることが認められた。As a result of examining the electromagnetic conversion characteristics of the head described above, it was found that the reproduction efficiency was improved by about 6 dB compared to the conventional head.
(実施例2)
第6図に本発明により成る第2の磁気抵抗効果型ヘッド
の概略側断面図を示す。図中28はNiZnフェライト
焼結体に形成された溝に充填されたガラスである。本実
施例においては、第1の実施例に比べ、非導電性層間材
23′が排除されている。(Embodiment 2) FIG. 6 shows a schematic side sectional view of a second magnetoresistive head according to the present invention. In the figure, 28 is glass filled in a groove formed in the NiZn ferrite sintered body. In this embodiment, compared to the first embodiment, the non-conductive interlayer material 23' is eliminated.
同ヘッドについても、実施例1の結果とほぼ同様の再生
効率の向上が認められた。Regarding the head, almost the same improvement in reproduction efficiency as the result of Example 1 was observed.
以上本発明について実施例を用いて詳細に説明したが、
バイアス手段として、永久磁石を用いた場合でも同様の
結果が得られる。The present invention has been explained in detail using examples above, but
Similar results can be obtained even when a permanent magnet is used as the biasing means.
以上本発明により、再生効率の良好なヨーク型磁気抵抗
効果型ヘッドの提供が可能となり、その適用分野を大巾
に広げることが可能となった。As described above, according to the present invention, it has become possible to provide a yoke type magnetoresistive head with good reproduction efficiency, and it has become possible to widen the field of application thereof.
第1図及び第2図は本発明の一実施例のヨーク型磁気抵
抗効果型ヘッドの概略側断面図とその等何回路、第3図
及び第4図は従来のヨーク型磁気抵抗効果型ヘッドの概
略側断面図とその等何回路、第5図及び第6図は本発明
の詳細な説明するための概略側断面図である。
1・・・下部コア、2・・・上部コア、3・・ギャップ
。
4・・・層間材、5.5’・・・絶縁材、6・・・磁気
抵抗効果素子、7・・・バイアス手段、8・・・媒体摺
動面。
10・・基板、11・・下部コア、12・・・上部コア
。
13・・・ギャップ、14・・・媒体摺動面、15・・
磁気抵抗効果素子、16.17・・・層間材、18・・
層間材、 20 ・−NiZnフェライト焼結体、21
.21’・・・上部コア、22・・・磁気抵抗効果素子
、23゜23′・・・層間材、24・・・ギャップ、2
5・・・媒体摺動面、26・・・層間材、27・・コイ
ル、28・・・ガラス。
霞へ1 and 2 are schematic side sectional views and circuits of a yoke type magnetoresistive head according to an embodiment of the present invention, and FIGS. 3 and 4 are diagrams of a conventional yoke type magnetoresistive head. FIGS. 5 and 6 are schematic side sectional views for explaining the present invention in detail. 1...Lower core, 2...Upper core, 3...Gap. 4... Interlayer material, 5.5'... Insulating material, 6... Magnetoresistive element, 7... Bias means, 8... Medium sliding surface. 10... Board, 11... Lower core, 12... Upper core. 13... Gap, 14... Medium sliding surface, 15...
Magnetoresistive element, 16.17... Interlayer material, 18...
Interlayer material, 20 -NiZn ferrite sintered body, 21
.. 21'... Upper core, 22... Magnetoresistive element, 23° 23'... Interlayer material, 24... Gap, 2
5... Medium sliding surface, 26... Interlayer material, 27... Coil, 28... Glass. To the haze
Claims (1)
録媒体に記録された情報信号を電気信号に変換する再生
ヘッドにおいて、該磁気抵抗効果を有する薄膜金属磁性
体が、磁気ギャップを有して閉磁路を形成している磁気
コアの一部に設置され、かつ再生信号磁束が薄膜金属磁
性体の大略膜厚方向と平行に流入、かつ流出するように
設置されたことを特徴とする 再生ヘッド。[Scope of Claims] 1. In a reproducing head that converts an information signal recorded on a magnetic recording medium into an electrical signal by utilizing the magnetoresistive effect of a thin film metal ferromagnetic material, a thin film metal magnetic material having the magnetoresistive effect. is installed in a part of the magnetic core that has a magnetic gap and forms a closed magnetic path, and is installed so that the reproduced signal magnetic flux flows in and out approximately parallel to the film thickness direction of the thin film metal magnetic material. A playback head featuring:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21575586A JPS6371914A (en) | 1986-09-16 | 1986-09-16 | Reproducing head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21575586A JPS6371914A (en) | 1986-09-16 | 1986-09-16 | Reproducing head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6371914A true JPS6371914A (en) | 1988-04-01 |
Family
ID=16677685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21575586A Pending JPS6371914A (en) | 1986-09-16 | 1986-09-16 | Reproducing head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6371914A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04195909A (en) * | 1990-11-28 | 1992-07-15 | Nec Corp | Perpendicular magnetization type magnetic resistance element and its applied magnetic resistance effect type magnetic head |
US6552882B1 (en) | 1998-09-01 | 2003-04-22 | Nec Corporation | Information reproduction head apparatus and information recording/reproduction system |
-
1986
- 1986-09-16 JP JP21575586A patent/JPS6371914A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04195909A (en) * | 1990-11-28 | 1992-07-15 | Nec Corp | Perpendicular magnetization type magnetic resistance element and its applied magnetic resistance effect type magnetic head |
US6552882B1 (en) | 1998-09-01 | 2003-04-22 | Nec Corporation | Information reproduction head apparatus and information recording/reproduction system |
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