JPH052637B2 - - Google Patents
Info
- Publication number
- JPH052637B2 JPH052637B2 JP58225194A JP22519483A JPH052637B2 JP H052637 B2 JPH052637 B2 JP H052637B2 JP 58225194 A JP58225194 A JP 58225194A JP 22519483 A JP22519483 A JP 22519483A JP H052637 B2 JPH052637 B2 JP H052637B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- atmosphere
- selected area
- compound
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 10
- 238000002109 crystal growth method Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22519483A JPS60118689A (ja) | 1983-11-29 | 1983-11-29 | 結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22519483A JPS60118689A (ja) | 1983-11-29 | 1983-11-29 | 結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60118689A JPS60118689A (ja) | 1985-06-26 |
| JPH052637B2 true JPH052637B2 (fr) | 1993-01-12 |
Family
ID=16825440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22519483A Granted JPS60118689A (ja) | 1983-11-29 | 1983-11-29 | 結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60118689A (fr) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5244562A (en) * | 1975-10-07 | 1977-04-07 | Fujitsu Ltd | Epitaxial growth method |
-
1983
- 1983-11-29 JP JP22519483A patent/JPS60118689A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5244562A (en) * | 1975-10-07 | 1977-04-07 | Fujitsu Ltd | Epitaxial growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60118689A (ja) | 1985-06-26 |
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