JPH0526340B2 - - Google Patents
Info
- Publication number
- JPH0526340B2 JPH0526340B2 JP62266436A JP26643687A JPH0526340B2 JP H0526340 B2 JPH0526340 B2 JP H0526340B2 JP 62266436 A JP62266436 A JP 62266436A JP 26643687 A JP26643687 A JP 26643687A JP H0526340 B2 JPH0526340 B2 JP H0526340B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- tab
- semiconductor device
- back surface
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011347 resin Substances 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000008188 pellet Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004859 Copal Substances 0.000 description 1
- 241000782205 Guibourtia conjugata Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明はパツケージの耐クラツク性の向上を図
つて信頼性、商品性の向上を図つた半導体装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device whose reliability and marketability are improved by improving the crack resistance of the package.
近年、半導体装置のパツケージの小型化が進
み、薄型パツケージが増えてきている。しかしな
がら、このパツケージは従来のデユアルインライ
ン型のパツケージよりもレジンモールドの厚さが
小さいため、レジンクラツクが生じ易く、製品の
信頼性、商品性が低くなるという問題が生じてい
る。 In recent years, packages for semiconductor devices have become smaller and thinner packages are on the rise. However, since the thickness of the resin mold in this package is smaller than that of the conventional dual-in-line type package, resin cracks are more likely to occur, resulting in problems such as lower product reliability and marketability.
例えば、第１図に示す一般的な薄型パツケージ
の半導体装置１では、半導体ペレツト２を固着し
たタブ３やリード４にはコバールや４２アロイ等
の熱膨張率が略0.5×10-5／℃近くの金属を用い
ているのに対し、これらをパツケージするレジン
５は膨張率が略２×10-5／℃であり、両者は熱膨
張率が大きく相違している。このため、レジンモ
ールド後に冷却されるなどのパツケージが熱履歴
を受けると、特にタブ８裏面においてタブとレジ
ン５との間に熱膨張率の差に基づく滑りが生じ、
両者の接着剥離を生ずる。したがつて、タブ裏側
のレジンは図示矢印のように中央側へ収縮してタ
ブ周辺の近傍に応力集中を起し、この結果そこに
レジンクラツクＸを生じさせるのである。 For example, in the general thin package semiconductor device 1 shown in FIG. 1, the tab 3 and leads 4 to which the semiconductor pellet 2 is fixed are made of Kovar, 42 alloy, etc., and have a thermal expansion coefficient of approximately 0.5×10 -5 /°C. In contrast, the resin 5 used to package these has an expansion coefficient of approximately 2×10 −5 /° C., and the thermal expansion coefficients of the two are significantly different. For this reason, when the package is subjected to thermal history such as being cooled after resin molding, slippage occurs between the tab and the resin 5 due to the difference in thermal expansion coefficients, especially on the back surface of the tab 8.
This will cause adhesive separation between the two. Therefore, the resin on the back side of the tab contracts toward the center as shown by the arrow in the figure, causing stress concentration near the periphery of the tab, and as a result, resin cracks X occur there.
このようなレジンクラツクは、パツケージ本来
の機能である耐湿封止性を損なつて半導体装置の
信頼性を低下すると共に、商品としての外観を低
下させることになる。 Such resin cracks impair the moisture-proof sealing property, which is the original function of the package, lowering the reliability of the semiconductor device and deteriorating the appearance of the product.
このレジンクラツクを防止するためには、レジ
ンの応力集中を防止すること、つまりタブとレジ
ンの接着剥離を防止することが一つの対策であ
り、一例としてカツプリング処理による方法がこ
れまでに試みられている。この方法はタブ裏面を
界面剤等を用いて処理し、タブ裏面とレジンとの
間をカツプリングさせて両者の接着を強化するも
のである。これによれば、タブとレジンとの間の
接着剥離が防止されてレジンクラツクの防止には
効果があるが、化学的な処理を行なうために作業
管理（温度、時間等）が複雑になると共に、効果
のばらつきが生じ易い等の新たな問題が生じてい
る。 In order to prevent this resin crack, one measure is to prevent stress concentration in the resin, that is, to prevent the adhesive from peeling off between the tab and the resin.One example of this is a method using coupling treatment that has been attempted. . In this method, the back surface of the tab is treated with an interfacial agent or the like to couple the back surface of the tab with the resin, thereby strengthening the adhesion between the two. According to this method, adhesive peeling between the tab and the resin is prevented, which is effective in preventing resin cracks, but work management (temperature, time, etc.) is complicated due to chemical treatment, and New problems have arisen, such as the tendency for variations in effectiveness to occur.
したがつて、本発明の目的にタブとレジンとの
接着強度を機械的に大きくすることにより、接着
剥離を防いでレジンクラツクを確実に防止し、こ
れにより耐湿性等の信頼性の向上を図ると共に外
観の悪化を防いで商品性の向上を図ることができ
る半導体装置を提供することにある。 Therefore, the purpose of the present invention is to mechanically increase the adhesive strength between the tab and the resin, thereby preventing adhesive peeling and reliably preventing resin cracks, thereby improving reliability such as moisture resistance. An object of the present invention is to provide a semiconductor device that can prevent deterioration in appearance and improve marketability.
このような目的を達成するために本発明は、半
導体ペレツトを固着したタブを複数個のリードと
共にレジンにてモールド封止してなる半導体装置
において、前記タブ裏面に互いに連続する桝目状
の溝を形成したことを特徴とするものである。 In order to achieve such an object, the present invention provides a semiconductor device in which a tab to which a semiconductor pellet is fixed is molded and sealed together with a plurality of leads using a resin, in which continuous square-shaped grooves are formed on the back surface of the tab. It is characterized by the fact that it has been formed.
以下本発明の実施例を説明する。 Examples of the present invention will be described below.
第２図は本発明の半導体装置１０の断面図、第
３図はそれに使用するリードフレームのタブの斜
視図である。 FIG. 2 is a sectional view of the semiconductor device 10 of the present invention, and FIG. 3 is a perspective view of a tab of a lead frame used therein.
図において、タブ１３および複数個のリード１
４はリードフレームとして一体に形成しており、
タブ１３上に半導体ペレツト１２を固着してこの
ペレツト１２とリード１４との間をワイヤ１６に
て接続した後にこれらをレジン１５にてモールド
封止し、その後外枠を切断して半導体装置を完成
するようになつている。前記タブ１３やリード１
４は半導体ペレツト１２を構成するシリコンの熱
膨張率との関係からコパールや42アロイ等の熱膨
張率が略0.5×10-5／℃の材料が使用される。一
方、レジン１５の熱膨張率は略２×10-5／℃であ
る。 In the figure, a tab 13 and a plurality of leads 1
4 is integrally formed as a lead frame,
After fixing the semiconductor pellet 12 on the tab 13 and connecting the pellet 12 and the lead 14 with a wire 16, they are molded and sealed with resin 15, and then the outer frame is cut to complete the semiconductor device. I'm starting to do that. The tab 13 and lead 1
4 is a material having a coefficient of thermal expansion of approximately 0.5×10 -5 /° C., such as copal or 42 alloy, in view of the relationship with the coefficient of thermal expansion of silicon constituting the semiconductor pellet 12. On the other hand, the coefficient of thermal expansion of the resin 15 is approximately 2×10 −5 /°C.
そして、本実施例では前記タブ１３の裏面に互
いに接続する溝としての桝目状の溝１７を形成
し、モールドしたレジンの一部１５ａが溝１７内
に侵入した状態で固化するように構成しているの
である。 In this embodiment, a square-shaped groove 17 is formed on the back surface of the tab 13 to connect to each other, and a portion 15a of the molded resin is solidified while entering the groove 17. There is.
このように構成すると、タブ１３とレンジ１５
とは互に一体的な状態とされるため、タブ１３に
対するレジン１５の横方向の移動は、溝１７とこ
の溝内に侵入したレジンの一部１５ａとの係合に
よつて機械的に拘束されることになる。したがつ
て、熱履歴を受けてタブ１３とレジ１５との間に
熱膨張率の差が生じても、タブ裏面とレジンとの
接着が剥離してレジンが第１図のように滑動収縮
することはなく、タブ周辺近傍に応力集中が生ず
ることもない。この結果、タブ裏側のレジンはタ
ブ裏面全体にわたつて応力が分散されることにな
り、応力集中に伴なうレジンクラツクが防止され
るのである。また、単にタブ裏面に盲穴を設ける
場合に較べて溝と溝内に侵入したレジンの係合が
一層強固なものとなる。すなわち、タブ裏面に複
数の盲孔を設ける構成の場合は、比較的大きい温
度変化を伴う熱履歴によつて盲孔内に入つたレジ
ンが比較的容易に剪断されてしまい、これにより
タブとレジンとの接着剥離、レジンの滑動剥離を
充分に防止できない危険性が残ることと成る。こ
れに対して、実施例のようにタブ裏面に互いに連
続する桝目状の溝を形成しておく場合は、モール
ド時においてかかる溝内に侵入したレジンが交差
構成の連続体となるので、かかる溝内のレジン
が、タブ溝内の面方向の応力に対して大きい機械
的強度を持つようになる。その結果、レジンクラ
ツクの発生を充分に防ぐことが出来るようにな
る。 With this configuration, tab 13 and range 15
Since the resin 15 is in an integral state with each other, the lateral movement of the resin 15 with respect to the tab 13 is mechanically restrained by the engagement between the groove 17 and the portion 15a of the resin that has entered the groove. will be done. Therefore, even if a difference in coefficient of thermal expansion occurs between the tab 13 and the register 15 due to thermal history, the adhesive between the tab back surface and the resin peels off and the resin slides and contracts as shown in Figure 1. There is no stress concentration near the tab. As a result, the stress on the resin on the back side of the tab is dispersed over the entire back side of the tab, and resin cracks due to stress concentration are prevented. Furthermore, the engagement between the groove and the resin that has entered the groove becomes stronger than when a blind hole is simply provided on the back surface of the tab. In other words, in the case of a configuration in which multiple blind holes are provided on the back of the tab, the resin that has entered the blind holes is relatively easily sheared due to the thermal history accompanied by relatively large temperature changes, which causes the tab and resin to There remains a risk that adhesive peeling and sliding peeling of the resin cannot be sufficiently prevented. On the other hand, if continuous grid-like grooves are formed on the back surface of the tab as in the example, the resin that has entered the grooves during molding will form a continuous body with an intersecting structure. The resin inside has a large mechanical strength against stress in the surface direction within the tab groove. As a result, the occurrence of resin cracks can be sufficiently prevented.
本発明者が従来装置と本発明装置との比較実験
を行なつたところ、第４図のような結果が得られ
た。この実験は完成された半導体装置を約−55〜
150℃で温度変化させ、これを複数サイクル繰返
して装置の不良率を検査したものである。これに
よれば、本発明装置は従来装置に比較して耐クラ
ツク性が格段に向上することが判る。 When the present inventor conducted a comparative experiment between a conventional device and a device of the present invention, the results shown in FIG. 4 were obtained. This experiment tested the completed semiconductor device at approximately -55~
The temperature was varied at 150°C, and this was repeated multiple times to examine the failure rate of the device. According to this, it can be seen that the crack resistance of the device of the present invention is significantly improved compared to the conventional device.
以上のように本発明の半導体装置は、タブ裏面
に互い連続する桝目状の溝を形成し、モールドす
るレジンをこの裏面の溝内に侵入した状態で固化
させるように構成したことにより、タブとレジン
とのタブ横方向の接着強度を高め、これによつて
熱履歴に伴なう熱膨張の差が生じてもタブとレジ
ンとの接着剥離を防止し、レジンの収縮およびこ
れに伴なう応力集中を防止してレジンクラツクを
防止するのである。したがつて従来と全く同様の
レジンモールド作業で耐クラツク性の良好な半導
体装置を得ることができる一方、高熱伝導レジン
を用いてもクラツクを確実に防止でき耐湿性の向
上等装置の信頼性を高め、更に外観の低下を防い
で商品性を高める等の効果を奏するのである。 As described above, the semiconductor device of the present invention is configured such that continuous square-shaped grooves are formed on the back surface of the tab, and the resin to be molded is solidified while entering the grooves on the back surface. Increases the adhesive strength of the tab to the resin in the lateral direction, thereby preventing the adhesive from peeling off between the tab and the resin even if there is a difference in thermal expansion due to thermal history, and reducing the shrinkage of the resin and the resulting This prevents stress concentration and resin cracks. Therefore, while it is possible to obtain a semiconductor device with good crack resistance using the same resin molding process as in the past, it is also possible to reliably prevent cracks even when using high thermal conductivity resin, and to improve the reliability of the device by improving moisture resistance. This has the effect of increasing marketability by preventing deterioration of appearance and improving marketability.
第１図は従来の半導体装置の不具合を説明する
ための断面図、第２図は本発明の半導体装置の断
面図、第３図は本発明に用いるリードフレームの
タブの斜視図、第４図は、実験結果を示すグラフ
である。
１，１０……半導体装置、２，１２……半導体
ペレツト、３，１３……タブ、４，１４……リー
ド、５，１５……レジン、１７……溝、Ｘ……ク
ラツク。
FIG. 1 is a sectional view for explaining the defects of a conventional semiconductor device, FIG. 2 is a sectional view of a semiconductor device of the present invention, FIG. 3 is a perspective view of a tab of a lead frame used in the present invention, and FIG. 4 is a graph showing experimental results. 1, 10... Semiconductor device, 2, 12... Semiconductor pellet, 3, 13... Tab, 4, 14... Lead, 5, 15... Resin, 17... Groove, X... Crack.
Claims (1)
ードと共にレジンにてモールド封止してなる半導
体装置において、前記タブ裏面に互いに連続する
桝目状の溝を形成して成ることを特徴とする半導
体装置。1. A semiconductor device comprising a tab to which a semiconductor pellet is fixed and sealed together with a plurality of leads by molding with resin, characterized in that a continuous square-shaped groove is formed on the back surface of the tab.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62266436A JPS63119248A (en) | 1987-10-23 | 1987-10-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62266436A JPS63119248A (en) | 1987-10-23 | 1987-10-23 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP685080A Division JPS56104459A (en) | 1980-01-25 | 1980-01-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63119248A JPS63119248A (en) | 1988-05-23 |
| JPH0526340B2 true JPH0526340B2 (en) | 1993-04-15 |
Family
ID=17430909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62266436A Granted JPS63119248A (en) | 1987-10-23 | 1987-10-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63119248A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49115653A (en) * | 1973-03-07 | 1974-11-05 | ||
| JPS5029415U (en) * | 1973-07-10 | 1975-04-03 | ||
| JPS5330991A (en) * | 1976-09-03 | 1978-03-23 | Ulvac Corp | Filament exchanging method for vacuum evaporation apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS497861U (en) * | 1972-04-19 | 1974-01-23 |
-
1987
- 1987-10-23 JP JP62266436A patent/JPS63119248A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49115653A (en) * | 1973-03-07 | 1974-11-05 | ||
| JPS5029415U (en) * | 1973-07-10 | 1975-04-03 | ||
| JPS5330991A (en) * | 1976-09-03 | 1978-03-23 | Ulvac Corp | Filament exchanging method for vacuum evaporation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63119248A (en) | 1988-05-23 |
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