JPH05254892A - 集積光回路の作成方法 - Google Patents
集積光回路の作成方法Info
- Publication number
- JPH05254892A JPH05254892A JP4281103A JP28110392A JPH05254892A JP H05254892 A JPH05254892 A JP H05254892A JP 4281103 A JP4281103 A JP 4281103A JP 28110392 A JP28110392 A JP 28110392A JP H05254892 A JPH05254892 A JP H05254892A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- mask
- ion exchange
- layer
- glass body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 238000005342 ion exchange Methods 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000011282 treatment Methods 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 239000003599 detergent Substances 0.000 claims description 7
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 150000003475 thallium Chemical class 0.000 claims description 3
- 229910003438 thallium oxide Inorganic materials 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 description 9
- 229910052716 thallium Inorganic materials 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- -1 thallium ions Chemical class 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L magnesium sulphate Substances [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 150000003476 thallium compounds Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
- C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9111923 | 1991-09-27 | ||
| FR9111923A FR2681855B1 (fr) | 1991-09-27 | 1991-09-27 | Procede de production de composants en optique integree par echange d'ions utilisant un masque en silicium, et procedes pour la realisation et l'elimination finale dudit masque. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05254892A true JPH05254892A (ja) | 1993-10-05 |
Family
ID=9417366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4281103A Pending JPH05254892A (ja) | 1991-09-27 | 1992-09-28 | 集積光回路の作成方法 |
Country Status (14)
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE178265T1 (de) * | 1992-10-12 | 1999-04-15 | Toray Industries | Wasserdichtes gewebe mit hohem wasserdruckwiderstand und hoher dampfdurchlässigkeit, sowie dessen herstellung |
| FR2764309B1 (fr) * | 1997-06-06 | 1999-08-27 | Corning Inc | Procede de creation d'une couche de silicium sur une surface |
| US8673163B2 (en) | 2008-06-27 | 2014-03-18 | Apple Inc. | Method for fabricating thin sheets of glass |
| US7810355B2 (en) | 2008-06-30 | 2010-10-12 | Apple Inc. | Full perimeter chemical strengthening of substrates |
| WO2010101961A2 (en) | 2009-03-02 | 2010-09-10 | Apple Inc. | Techniques for strengthening glass covers for portable electronic devices |
| US20110019354A1 (en) * | 2009-03-02 | 2011-01-27 | Christopher Prest | Techniques for Strengthening Glass Covers for Portable Electronic Devices |
| US9778685B2 (en) | 2011-05-04 | 2017-10-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9213451B2 (en) | 2010-06-04 | 2015-12-15 | Apple Inc. | Thin glass for touch panel sensors and methods therefor |
| US10189743B2 (en) | 2010-08-18 | 2019-01-29 | Apple Inc. | Enhanced strengthening of glass |
| US8873028B2 (en) | 2010-08-26 | 2014-10-28 | Apple Inc. | Non-destructive stress profile determination in chemically tempered glass |
| US8824140B2 (en) | 2010-09-17 | 2014-09-02 | Apple Inc. | Glass enclosure |
| US9725359B2 (en) | 2011-03-16 | 2017-08-08 | Apple Inc. | Electronic device having selectively strengthened glass |
| US10781135B2 (en) * | 2011-03-16 | 2020-09-22 | Apple Inc. | Strengthening variable thickness glass |
| US9128666B2 (en) | 2011-05-04 | 2015-09-08 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9944554B2 (en) | 2011-09-15 | 2018-04-17 | Apple Inc. | Perforated mother sheet for partial edge chemical strengthening and method therefor |
| US9516149B2 (en) | 2011-09-29 | 2016-12-06 | Apple Inc. | Multi-layer transparent structures for electronic device housings |
| US10144669B2 (en) | 2011-11-21 | 2018-12-04 | Apple Inc. | Self-optimizing chemical strengthening bath for glass |
| US8684613B2 (en) | 2012-01-10 | 2014-04-01 | Apple Inc. | Integrated camera window |
| US10133156B2 (en) | 2012-01-10 | 2018-11-20 | Apple Inc. | Fused opaque and clear glass for camera or display window |
| US8773848B2 (en) | 2012-01-25 | 2014-07-08 | Apple Inc. | Fused glass device housings |
| US9946302B2 (en) | 2012-09-19 | 2018-04-17 | Apple Inc. | Exposed glass article with inner recessed area for portable electronic device housing |
| US9459661B2 (en) | 2013-06-19 | 2016-10-04 | Apple Inc. | Camouflaged openings in electronic device housings |
| US9886062B2 (en) | 2014-02-28 | 2018-02-06 | Apple Inc. | Exposed glass article with enhanced stiffness for portable electronic device housing |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3575746A (en) * | 1967-12-12 | 1971-04-20 | Air Reduction | Method for forming resistive and photoetched resistive and conductive glaze patterns |
| GB1279464A (en) * | 1968-10-03 | 1972-06-28 | Nippon Selfoc Co Ltd | Production of light conducting glass fibres |
| US3857689A (en) * | 1971-12-28 | 1974-12-31 | Nippon Selfoc Co Ltd | Ion exchange process for manufacturing integrated optical circuits |
| JPS5742547A (en) * | 1980-08-25 | 1982-03-10 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of optical glass part |
| CA1255382A (en) * | 1984-08-10 | 1989-06-06 | Masao Kawachi | Hybrid optical integrated circuit with alignment guides |
| JPS6235524A (ja) * | 1985-08-08 | 1987-02-16 | Nec Corp | 半導体装置の製造方法 |
| JPH0727888B2 (ja) * | 1985-10-22 | 1995-03-29 | 日本電信電話株式会社 | ドライエツチング方法 |
| US4842629A (en) * | 1986-12-01 | 1989-06-27 | Siemens Aktiengesellschaft | Method for producing buried regions of raised refractive index in a glass member by ion exchange |
| JP2725319B2 (ja) * | 1988-11-07 | 1998-03-11 | 富士通株式会社 | 荷電粒子線マスクの製造方法 |
-
1991
- 1991-09-27 FR FR9111923A patent/FR2681855B1/fr not_active Expired - Fee Related
-
1992
- 1992-09-10 CA CA002077984A patent/CA2077984A1/en not_active Abandoned
- 1992-09-10 US US07/943,187 patent/US5281303A/en not_active Expired - Fee Related
- 1992-09-17 EP EP92115885A patent/EP0539711B1/en not_active Expired - Lifetime
- 1992-09-17 DE DE69203324T patent/DE69203324T2/de not_active Expired - Fee Related
- 1992-09-17 AU AU24541/92A patent/AU661029B2/en not_active Ceased
- 1992-09-22 BR BR929203676A patent/BR9203676A/pt not_active Application Discontinuation
- 1992-09-25 SK SK2948-92A patent/SK294892A3/sk unknown
- 1992-09-25 MX MX9205500A patent/MX9205500A/es not_active IP Right Cessation
- 1992-09-25 HU HU9203073A patent/HUT64287A/hu unknown
- 1992-09-25 CZ CS922948A patent/CZ294892A3/cs unknown
- 1992-09-26 KR KR1019920017609A patent/KR930005929A/ko not_active Abandoned
- 1992-09-28 JP JP4281103A patent/JPH05254892A/ja active Pending
- 1992-10-05 TW TW081107959A patent/TW238414B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| AU661029B2 (en) | 1995-07-13 |
| AU2454192A (en) | 1993-04-01 |
| TW238414B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1995-01-11 |
| US5281303A (en) | 1994-01-25 |
| CZ294892A3 (en) | 1993-04-14 |
| FR2681855B1 (fr) | 1993-12-31 |
| FR2681855A1 (fr) | 1993-04-02 |
| EP0539711B1 (en) | 1995-07-05 |
| BR9203676A (pt) | 1993-04-20 |
| HU9203073D0 (en) | 1992-12-28 |
| SK294892A3 (en) | 1995-03-08 |
| KR930005929A (ko) | 1993-04-20 |
| MX9205500A (es) | 1993-04-01 |
| HUT64287A (en) | 1993-12-28 |
| EP0539711A1 (en) | 1993-05-05 |
| DE69203324T2 (de) | 1996-01-04 |
| CA2077984A1 (en) | 1993-03-28 |
| DE69203324D1 (de) | 1995-08-10 |
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