JPH0525384B2 - - Google Patents

Info

Publication number
JPH0525384B2
JPH0525384B2 JP61227185A JP22718586A JPH0525384B2 JP H0525384 B2 JPH0525384 B2 JP H0525384B2 JP 61227185 A JP61227185 A JP 61227185A JP 22718586 A JP22718586 A JP 22718586A JP H0525384 B2 JPH0525384 B2 JP H0525384B2
Authority
JP
Japan
Prior art keywords
layer
polycrystalline
silicon
soi
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61227185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6384013A (ja
Inventor
Tomoyasu Inoe
Toshihiko Hamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP22718586A priority Critical patent/JPS6384013A/ja
Publication of JPS6384013A publication Critical patent/JPS6384013A/ja
Publication of JPH0525384B2 publication Critical patent/JPH0525384B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP22718586A 1986-09-27 1986-09-27 半導体結晶層の製造方法 Granted JPS6384013A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22718586A JPS6384013A (ja) 1986-09-27 1986-09-27 半導体結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22718586A JPS6384013A (ja) 1986-09-27 1986-09-27 半導体結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS6384013A JPS6384013A (ja) 1988-04-14
JPH0525384B2 true JPH0525384B2 (enrdf_load_stackoverflow) 1993-04-12

Family

ID=16856820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22718586A Granted JPS6384013A (ja) 1986-09-27 1986-09-27 半導体結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS6384013A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG162675A1 (en) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5659694A (en) * 1979-10-18 1981-05-23 Agency Of Ind Science & Technol Manufacture of thin film

Also Published As

Publication number Publication date
JPS6384013A (ja) 1988-04-14

Similar Documents

Publication Publication Date Title
US5371381A (en) Process for producing single crystal semiconductor layer and semiconductor device produced by said process
JPS6115319A (ja) 半導体装置の製造方法
JPH027415A (ja) Ｓｏｉ薄膜形成方法
JPH0525384B2 (enrdf_load_stackoverflow)
JPH0517693B2 (enrdf_load_stackoverflow)
JPS5939791A (ja) 単結晶の製造方法
JP2779033B2 (ja) 多結晶Ｓｉ薄膜の成長方法
JPS5983993A (ja) 単結晶半導体層の成長方法
JPH0334847B2 (enrdf_load_stackoverflow)
JP2706770B2 (ja) 半導体基板の製造方法
JPH0236050B2 (enrdf_load_stackoverflow)
JPH0834176B2 (ja) 半導体単結晶層の製造方法
JPH0779082B2 (ja) 半導体単結晶層の製造方法
JP2569402B2 (ja) 半導体薄膜結晶層の製造方法
JP2500315B2 (ja) 半導体単結晶層の製造方法
JPH0732121B2 (ja) 半導体装置の製造方法
JPS6320011B2 (enrdf_load_stackoverflow)
JPS58180019A (ja) 半導体基体およびその製造方法
JP2566663B2 (ja) 半導体単結晶膜の製造方法
JP2526380B2 (ja) 多層半導体基板の製造方法
JPH04314325A (ja) 半導体装置の製造方法
JPS6038809A (ja) 半導体装置の製造方法
JPS62208620A (ja) 半導体装置の製造方法
JPS5939022A (ja) 半導体単結晶薄膜の製造方法
JPS6233415A (ja) 単結晶半導体膜の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term