JPH0525255Y2 - - Google Patents
Info
- Publication number
- JPH0525255Y2 JPH0525255Y2 JP1989001016U JP101689U JPH0525255Y2 JP H0525255 Y2 JPH0525255 Y2 JP H0525255Y2 JP 1989001016 U JP1989001016 U JP 1989001016U JP 101689 U JP101689 U JP 101689U JP H0525255 Y2 JPH0525255 Y2 JP H0525255Y2
- Authority
- JP
- Japan
- Prior art keywords
- reflector
- lead frame
- resin
- led
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011347 resin Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
【考案の詳細な説明】
＜産業上の利用分野＞
本考案は、反射器の底部にLEDチツプが配置
され、LEDチツプと反射面とが光透過性樹脂に
よりモールドされた構造のLED表示素子に関す
る。[Detailed description of the invention] <Industrial application field> The present invention relates to an LED display element having a structure in which an LED chip is placed at the bottom of a reflector, and the LED chip and the reflective surface are molded with a light-transmitting resin. .
＜従来の技術＞
第６図はこの種のLED表示素子の構造を示し
ている。図において、１０１は反射器、１０２は
LEDチツプ、１０３，１０４，１０５はリード
フレーム、１０６は透明樹脂、１０７は金線であ
る。<Prior Art> FIG. 6 shows the structure of this type of LED display element. In the figure, 101 is a reflector, 102 is a reflector, and 102 is a reflector.
LED chips, 103, 104, 105 are lead frames, 106 is transparent resin, and 107 is gold wire.
２個のLEDチツプ１０２がカツプ状の反射器
１０１の底面部に搭載されている。反射器１０１
は、LEDチツプ１０２の横方向の発光を図中上
方向へ反射し、上方向の輝度を高める役目をも
つ。反射器１０１は、リードフレーム１０４と一
体的に形成されている。LEDチツプ１０２、反
射器１０１を含むリードフレーム１０４、両側の
リードフレーム１０３，１０５、金線１０７は、
透明樹脂１０６によりモールドされている。透明
樹脂１０６は、その頭部が球面状であり、レンズ
としての機能を果たす。 Two LED chips 102 are mounted on the bottom of a cup-shaped reflector 101. Reflector 101
has the role of reflecting the lateral light emitted from the LED chip 102 upward in the figure and increasing the brightness in the upward direction. The reflector 101 is integrally formed with the lead frame 104. The LED chip 102, the lead frame 104 including the reflector 101, the lead frames 103 and 105 on both sides, and the gold wire 107 are as follows:
It is molded with transparent resin 106. The transparent resin 106 has a spherical head and functions as a lens.
反射器１０１はリードフレーム１０４の端部に
連続して形成されているが、このような反射器が
連続したリードフレームを作成する方法として、
従来、金属板をプレス加工により所望の形状に打
抜き、その先端部分を第７図に示すようにヘツダ
ー１０８で押圧することにより、第８図に示すよ
うなカツプ状に成形し、その後、カツプの内面に
銀メツキなどにより反射面を形成する。 The reflector 101 is formed continuously at the end of the lead frame 104, but as a method for creating a lead frame with continuous reflectors,
Conventionally, a metal plate is punched into a desired shape by press working, and the tip thereof is pressed with a header 108 as shown in FIG. 7 to form a cup shape as shown in FIG. A reflective surface is formed on the inner surface by silver plating.
＜考案が解決しようとする課題＞
しかしながら、上記方法においては下記のよう
な問題があつた。<Problems to be solved by the invention> However, the above method has the following problems.
一般にLED表示素子は小さく、しかもリード
フレームの形状が複雑であることから、金属板か
らプレス打抜き加工によつて所望の形状を得る場
合、板厚が厚くなると加工ができない。従来、加
工が可能な板厚は、0.5mm程度が限度であつた。 In general, LED display elements are small and the shape of the lead frame is complicated, so if a desired shape is obtained by press punching from a metal plate, the thicker the plate, the more difficult the process will be. Conventionally, the maximum thickness that could be processed was approximately 0.5 mm.
このようにリードフレームの板厚が薄いため、
その先端をヘツダー加工によつてカツプ状に成形
するのは容易ではなく、大きなカツプを成形する
ことができない。したがつて、カツプの底面部に
多くのLEDチツプを搭載することができず、
LED表示素子の輝度が低いという問題があつた。 Because the lead frame is thin like this,
It is not easy to form the tip into a cup shape by header processing, and it is not possible to form a large cup. Therefore, it is not possible to mount many LED chips on the bottom of the cup.
There was a problem that the brightness of the LED display element was low.
また、カツプの内面はLED発光の反射面とし
て作用するが、この反射面の広さ、深さあるいは
曲面率を適切に定めることにより、正面への光の
取り出し効率を高めることができる。しかし、大
きなカツプが得られないため、これらを任意に選
択することができないという問題があつた。 Furthermore, the inner surface of the cup acts as a reflective surface for LED light emission, and by appropriately determining the width, depth, or curvature of this reflective surface, the efficiency of light extraction to the front can be increased. However, since large cups cannot be obtained, there is a problem in that these cannot be arbitrarily selected.
さらに、透明樹脂の硬化時の発熱により、リー
ドフレームの金属と樹脂との膨張率の差による応
力歪みが透明樹脂の内部に発生し、レンズ効果に
悪影響を及ぼすという問題もあつた。さらに、
LEDの点灯及び消灯時の発熱と冷却の繰り返し
による応力歪みにより、電気接合部の接続不良が
発生するという問題もあつた。 Furthermore, due to the heat generated during curing of the transparent resin, stress strain due to the difference in expansion coefficient between the metal of the lead frame and the resin is generated inside the transparent resin, which has a negative effect on the lens effect. moreover,
There was also the problem that the stress and strain caused by repeated heat generation and cooling when the LED was turned on and off caused connection failures in the electrical joints.
本考案は上記事情に鑑みてなされたものであ
り、その目的は、任意の大きさ及び形状のカツプ
をリードフレームと一体的に形成できるようにし
たLED表示素子を提供することである。 The present invention has been made in view of the above circumstances, and its purpose is to provide an LED display element in which a cup of any size and shape can be integrally formed with a lead frame.
＜課題を解決するための手段＞
上記目的を達成するために、本考案は、リード
フレームの端部に連続した反射器の底面部に
LEDチツプが搭載され、上記反射器とLEDチツ
プとが透明樹脂によりモールドされた構造の
LED表示素子において、上記リードフレームが
樹脂であり、その表面に下地となる金属メツキ層
と良導電性である金属メツキ層とを有する構造で
あることを特徴としている。<Means for Solving the Problems> In order to achieve the above object, the present invention provides a structure in which the bottom part of the reflector is connected to the end of the lead frame.
Equipped with an LED chip, the reflector and LED chip are molded with transparent resin.
The LED display element is characterized in that the lead frame is made of resin and has a metal plating layer serving as a base and a metal plating layer having good conductivity on its surface.
＜作用＞
本考案においては、リードフレームの材質を樹
脂としたことにより、任意の形状の成形が可能で
あり、したがつて端部に任意の大きさ及び形状の
カツプを成形することができる。さらに、表面に
良導電性の金属メツキ層を形成したことにより、
良好な電気伝導性が得られる。<Function> In the present invention, by using resin as the material of the lead frame, it is possible to mold the lead frame into any shape, and therefore a cup of any size and shape can be molded at the end. Furthermore, by forming a highly conductive metal plating layer on the surface,
Good electrical conductivity can be obtained.
＜実施例＞
第２図は本実施例のLED表示素子の正面から
見た構造、第３図は側面から見た構造を示してお
り、第４図は第３図におけるＡ−A′矢視断面の
構造、第５図は上面から見た構造をそれぞれ示し
ている。図において、１，２，３はリードフレー
ム、４は反射器、５は透明樹脂モールド、６は
LEDチツプ、７は金線である。<Example> Figure 2 shows the structure of the LED display element of this example seen from the front, Figure 3 shows the structure seen from the side, and Figure 4 shows the structure viewed from the A-A' arrow in Figure 3. The cross-sectional structure and FIG. 5 show the structure viewed from the top, respectively. In the figure, 1, 2, and 3 are lead frames, 4 is a reflector, 5 is a transparent resin mold, and 6 is a
LED chip, 7 is gold wire.
カツプ状の反射器４は、リードフレーム２の端
部と連続し、リードフレーム２と一体的である。
この反射器４は、その内面が反射面を構成してい
る。リードフレーム２の両側にはポストリードと
しての役割をもつリードフレーム１，３が配置さ
れている。反射器４の底面部４ａには、４個の
LEDチツプ６が搭載されている。金線７は、反
射器４の切欠部４ｂを通り、LEDチツプ６とリ
ードフレーム１，３とを電気的に接続している。
以上の反射器４を含むリードフレーム２の端部、
リードフレーム１，３の端部、LEDチツプ６並
びに金線７は、透明樹脂５によりモールドされて
いる。透明樹脂５の上面は球面であり、この透明
樹脂５はレンズの役割を果たす。 The cup-shaped reflector 4 is continuous with the end of the lead frame 2 and is integral with the lead frame 2.
The inner surface of this reflector 4 constitutes a reflective surface. Lead frames 1 and 3, which serve as post leads, are arranged on both sides of the lead frame 2. On the bottom surface 4a of the reflector 4, there are four
Equipped with 6 LED chips. The gold wire 7 passes through the notch 4b of the reflector 4 and electrically connects the LED chip 6 and the lead frames 1 and 3.
An end of the lead frame 2 including the above reflector 4,
The ends of the lead frames 1 and 3, the LED chip 6 and the gold wire 7 are molded with a transparent resin 5. The upper surface of the transparent resin 5 is a spherical surface, and this transparent resin 5 plays the role of a lens.
このLED表示素子は、反射器４の内面にて
LEDチツプ６からの横方向の光束を全反射し、
反射光を透明樹脂５の頭部へ集光させ、さらに、
透明樹脂５のレンズ作用によつてLED表示素子
主軸面での発光輝度を増加させている。 This LED display element is on the inner surface of reflector 4.
Totally reflects the lateral luminous flux from the LED chip 6,
The reflected light is focused on the head of the transparent resin 5, and further,
The lens action of the transparent resin 5 increases the luminance of light emitted from the main axis plane of the LED display element.
第１図は反射器４が一体化されたリードフレー
ム２及び両側のリードフレーム１，３の詳細な構
造を示している。リードフレーム１，２，３は、
樹脂を素材とし、金型を用いた樹脂成形によつて
作成されている。この金型を用いた樹脂成形によ
れば、任意の寸法で複雑な形状を容易に作成する
ことができる。すなわち、リードフレーム２と一
体化された反射器４の寸法を任意の大きさにする
ことができる。したがつて、反射器４の底面部４
ａの面積を大きくすることにより、この底面部４
ａへ多くのLEDチツプ６を搭載し、LED表示素
子の輝度を高めることができる。 FIG. 1 shows the detailed structure of a lead frame 2 with an integrated reflector 4 and lead frames 1 and 3 on both sides. Lead frames 1, 2, 3 are
It is made of resin and is created by resin molding using a mold. According to resin molding using this mold, a complex shape with arbitrary dimensions can be easily created. That is, the dimensions of the reflector 4 integrated with the lead frame 2 can be made arbitrary. Therefore, the bottom part 4 of the reflector 4
By increasing the area of a, this bottom portion 4
By mounting many LED chips 6 on a, the brightness of the LED display element can be increased.
リードフレーム１，２，３の素材を樹脂とした
場合、そのままでは導電性がないため、表面に金
属メツキ層８を形成する。この金属メツキ層８
は、下地となるニツケルメツキ層とその上の銀メ
ツキ層からなる。銀は良導電性金属であるため、
この金属メツキ層８によつて従来の銅合金からな
るリードフレームと同様の電気伝導性が得られ
る。この金属メツキ層８の厚さは、金線７をワイ
ヤボンデイングする際に障害とならない程度とす
る必要がある。 When the material of the lead frames 1, 2, and 3 is resin, since it is not conductive as it is, a metal plating layer 8 is formed on the surface. This metal plating layer 8
consists of an underlying nickel plating layer and a silver plating layer above it. Since silver is a highly conductive metal,
This metal plating layer 8 provides electrical conductivity similar to that of a conventional lead frame made of a copper alloy. The thickness of this metal plating layer 8 needs to be such that it does not interfere with wire bonding of the gold wire 7.
リードフレーム１，２，３の素材としての樹脂
は、例えばポリアミドイミド、ポリイミド、ポリ
エーテルイミド、ポリエーテルケトンなどを用い
ることができる。また、電気伝導性をさらに良好
にするため、及び、熱伝導性を良好にするため
に、金属粉や金属繊維などを樹脂中に分散させた
複合材料を用いてもよい。さらに、樹脂の成形方
法としては、射出成形法、直圧法、移送成形法な
ど種々の方法を用いることができる。 As the resin material for the lead frames 1, 2, and 3, for example, polyamideimide, polyimide, polyetherimide, polyetherketone, etc. can be used. Furthermore, in order to further improve electrical conductivity and thermal conductivity, a composite material in which metal powder, metal fibers, etc. are dispersed in a resin may be used. Furthermore, various methods such as an injection molding method, a direct pressure method, and a transfer molding method can be used as a method for molding the resin.
＜考案の効果＞
以上説明したように本考案においては、リード
フレームの材質を樹脂とし、その表面に金属メツ
キを施すことにより導電性をもたせる構造とした
ので、樹脂成形によつて任意の大きさの反射器を
リードフレームと一体的に作成することができ
る。したがつて、反射器を大きくし、多くの
LEDを搭載することにより、LED表示素子の輝
度を高め、表示効果を向上させることができる。
また、反射器の反射面の広さ、深さ及び曲面率を
任意に設定することができるので、正面光の取り
出し効率を高めることにより、表示輝度を高める
ことができる。<Effects of the invention> As explained above, in this invention, the material of the lead frame is resin, and the surface is plated with metal to make it conductive, so it can be molded into any size by resin molding. Reflectors can be made integrally with the lead frame. Therefore, the reflector should be made large and many
By installing LEDs, it is possible to increase the brightness of the LED display element and improve the display effect.
Furthermore, since the width, depth, and curvature of the reflective surface of the reflector can be set arbitrarily, display brightness can be increased by increasing the efficiency of extracting frontal light.
さらに、リードフレームが樹脂であるため、透
明樹脂モールド体と線膨張係数がほぼ等しく、モ
ールド時の応力歪みやLEDの点灯と消灯時の発
熱と冷却による繰り返し応力歪みの発生を防止
し、透明樹脂のレンズ効果を良好にし、電気接合
部の接続不良を防止することができる。 Furthermore, since the lead frame is made of resin, its coefficient of linear expansion is almost the same as that of the transparent resin molded body, which prevents stress distortion during molding and repeated stress distortion due to heat generation and cooling when the LED is turned on and off. It is possible to improve the lens effect of the lens and prevent connection failures at electrical junctions.
第１図は本考案実施例の部分断面構造を示す
図、第２図は本考案実施例の正面構造を示す図、
第３図は本考案実施例の側面構造を示す図、第４
図は本考案実施例の断面構造を示す図、第５図は
本考案実施例の上面構造を示す図、第６図は従来
例の斜視構造を示す図、第７図と第８図は従来例
の製造方法を説明する図である。
１，２，３……リードフレーム、４……反射
器、５……透明樹脂、６……LEDチツプ、７…
…金線、８……金属メツキ層。
FIG. 1 is a diagram showing a partial cross-sectional structure of an embodiment of the present invention, FIG. 2 is a diagram showing a front structure of an embodiment of the present invention,
Figure 3 is a diagram showing the side structure of the embodiment of the present invention;
The figure shows the cross-sectional structure of the embodiment of the present invention, Fig. 5 shows the top structure of the embodiment of the invention, Fig. 6 shows the perspective structure of the conventional example, and Figs. 7 and 8 show the conventional structure. It is a figure explaining the manufacturing method of an example. 1, 2, 3...Lead frame, 4...Reflector, 5...Transparent resin, 6...LED chip, 7...
...Gold wire, 8...Metal plating layer.
Claims (1)
部にLEDチツプが搭載され、上記反射器とLED
チツプとが透明樹脂によりモールドされた構造の
LED表示素子において、上記リードフレームが
樹脂であり、その表面に下地となる金属メツキ層
と良導電性である金属メツキ層とを有する構造で
あるLED表示素子。 An LED chip is mounted on the bottom of the reflector that is continuous to the end of the lead frame, and the above reflector and LED
The chip is molded with transparent resin.
The LED display element has a structure in which the lead frame is made of resin and has a metal plating layer serving as a base and a metal plating layer having good conductivity on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989001016U JPH0525255Y2 (en) | 1989-01-09 | 1989-01-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989001016U JPH0525255Y2 (en) | 1989-01-09 | 1989-01-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0292953U JPH0292953U (en) | 1990-07-24 |
| JPH0525255Y2 true JPH0525255Y2 (en) | 1993-06-25 |
Family
ID=31200535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989001016U Expired - Lifetime JPH0525255Y2 (en) | 1989-01-09 | 1989-01-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0525255Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005020336A1 (en) * | 2003-08-25 | 2005-03-03 | Tabuchi Electric Co., Ltd. | Process for producing light emitting diode |
-
1989
- 1989-01-09 JP JP1989001016U patent/JPH0525255Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0292953U (en) | 1990-07-24 |
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