JP4341951B2 - Light emitting diode and its package structure - Google Patents

Light emitting diode and its package structure Download PDF

Info

Publication number
JP4341951B2
JP4341951B2 JP2003129635A JP2003129635A JP4341951B2 JP 4341951 B2 JP4341951 B2 JP 4341951B2 JP 2003129635 A JP2003129635 A JP 2003129635A JP 2003129635 A JP2003129635 A JP 2003129635A JP 4341951 B2 JP4341951 B2 JP 4341951B2
Authority
JP
Japan
Prior art keywords
exposed
emitting diode
package
light emitting
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003129635A
Other languages
Japanese (ja)
Other versions
JP2004335740A (en
Inventor
靖樹 桑原
忍 中村
正明 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2003129635A priority Critical patent/JP4341951B2/en
Publication of JP2004335740A publication Critical patent/JP2004335740A/en
Application granted granted Critical
Publication of JP4341951B2 publication Critical patent/JP4341951B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Landscapes

  • Led Device Packages (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、発光ダイオード（以下ＬＥＤと略記する）及びそのパッケージ構造に関する。
【０００２】
【従来の技術】
ＬＥＤはＡｌＩｎＧａＰやＧａＮ等の化合物半導体ウエハ上にＰＮ接合を形成し、これに順方向電流を通じて可視光又は近赤外光の発光を得るものであり、近年、表示をはじめ、通信、計測、制御等に広く応用されている。一方、近年の電子機器は、高性能化・多機能化と共に、小型化・軽量化を追求している。更に、特に放熱性・信頼性が重視される分野にも適用範囲が拡大している。そのために電子機器に使用される電子部品は、プリント配線基板上に表面実装できる部品（ＳＭＤ）としたものが多い。そしてこのような電子部品は、一般的に略立方体形状をしており、プリント配線基板上の配線パターンにリフロー半田付け等の固着手段で実装される。ＬＥＤにもこうした要求に応えるものが開発されている（例えば特許文献１を参照）。
【０００３】
このような従来のＬＥＤについて、図面に基づいてその概要を説明する。図１２は従来のＳＭＤ型ＬＥＤの縦断面図である。図１２において、７０は略立方体形状のＳＭＤ型ＬＥＤである。７１は、予めプレス成形されたリン青銅から成るリードフレームにＡｇ等のメッキを施し、白色成形樹脂によって光反射面７１ａを含むように立体形状にインサート成形して成るパッケージである。
【０００４】
７２は、上面電極７２ａから側面電極７２ｂを経由して下面の端子電極７２ｃに至るリードフレームである一方の電極パターンであり、７３は同じく上面電極７３ａから側面電極７３ｂを経由して下面の端子電極７３ｃに至る他方の電極パターンである。７４は、上面電極７２ａに一方の電極を導電性樹脂によりダイボンディングしたＬＥＤ素子である。７５はＡｕ線等より成るワイヤであり、ワイヤ７５を用いてＬＥＤ素子７４の他方の電極と上面電極７３ａとがワイヤボンディング接続されている。７６は、ＬＥＤ素子７４、ＬＥＤ素子７４の接続部及びワイヤ７５等の保護と、ＬＥＤ素子７４の発光を効果的にすることのために封止している、透光性のエポキシ樹脂等から成る封止樹脂である。
【０００５】
【特許文献１】
特開平１０−２４２５２６号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、従来のＳＭＤ型ＬＥＤ７０ではＬＥＤ素子７４から放出される熱をワイヤを介してリードフレームでしか受け取ってないので放熱性が不十分である。また、樹脂封止による影響で屈折率が変化し、ＬＥＤ素子７４から放たれる光の反射効率がうまく活用されていないという問題があった。
【０００７】
上記発明は、このような従来の問題を解決するためになされたものであり、その目的は、放熱性に優れたリードフレームから成るＬＥＤ及びそのパッケージ構造を提供することである。
【０００８】
【課題を解決するための手段】
前述した目的を達成するための本発明の手段は、一面に発光ダイオード素子を収納する凹部を設けた略立方体形状の樹脂に一対のリードフレームを埋設して形成したパッケージの、前記凹部底面に前記リードフレームにより形成された接続電極を露出させ、他の一面に該接続電極と導通する端子電極を露出させたパッケージの前記接続電極に発光ダイオード素子を搭載し封止して成る発光ダイオードにおいて、前記リードフレームは前記凹部表面に隙間を隔てて対向するように両反射面を露出させ、この反射面上端から前記パッケージの対向する両側面に向かって延伸し、更に前記両側面から前記パッケージの他の一面である下面にかけて表面に露出して屈曲し、下面に露出したところが前記端子電極となり、この端子電極は引き続き屈曲延伸して前記反射面下端に接触して前記凹部の底面に露出し、前記接続電極となるように一体形成されていることを特徴とする。
【０００９】
また、前記凹部上面にシリコーン板を被せてカシメにより固定したことを特徴とする。
【００１０】
また、前記シリコーン板に蛍光体または着色剤を含有させて色度補正することを特徴とする。
【００１１】
また、前記発光ダイオード素子はサブマウント基板を介して搭載されていることを特徴とする。
【００１２】
また、前記リードフレームは光沢銀メッキにより表面処理されていることを特徴とする。
【００１３】
前述した目的を達成するための本発明の他の手段は、一面に発光ダイオード素子を収納する凹部を設けた略立方体形状の樹脂にリードフレームを埋設して形成したパッケージであって、前記凹部底面に前記リードフレームにより形成された発光ダイオード素子を接続する接続電極を露出させ、他の一面に該接続電極と導通する端子電極を露出させた発光ダイオードのパッケージ構造において、前記リードフレームは前記凹部表面に隙間を隔てて対向するように両反射面を露出させ、この反射面上端から前記パッケージの対向する両側面に向かって延伸し、更に前記両側面から前記パッケージの他の一面である下面にかけて表面に露出して屈曲し、下面に露出したところが前記端子電極となり、この端子電極は引き続き屈曲延伸して前記反射面下端に接触して前記凹部の底面に露出し、前記接続電極となるように一体形成されていることを特徴とする。
【００１４】
【発明の実施の形態】
以下、本発明の実施の形態を図面に基づいて詳細に説明する。図１は本発明の第一の実施の形態であるＳＭＤ型ＬＥＤの縦断面図である。図２はこのＬＥＤ用のパッケージを斜め上方から見た斜視図、図３は同じく斜め下方から見た斜視図である。
【００１５】
図１〜図３において、１は外形が略立方体形状のＳＭＤ型ＬＥＤであり、２はＬＥＤ１のパッケージである。３、３は銅板またはアルミ板から対称な立体形状に一体形成され、光沢銀メッキにより表面処理された一対のリードフレームである。４は樹脂成形部であり、リードフレーム３、３を隙間２ａを隔てて対向するようにインサート成形により埋設してある。パッケージ２の一面である上面２ｃには、斜面２ｂと平坦な底面２ｄを有する上方に開口した略すり鉢状の凹部２ｅが形成されている。
【００１６】
リードフレーム３、３は、凹部２ｅ表面に露出する反射面３ａ上端からパッケージ２の対向する両側面に向かって延伸し、更に両側面からパッケージ２の他の一面である下面２ｆにかけて表面に露出して屈曲し、下面２ｆに露出したところが端子電極３ｃ、３ｃとなっている。端子電極３ｃ、３ｃは引き続き屈曲延伸して、反射面３ａ下端に接触して凹部２ｅの底面２ｄに露出し、ＬＥＤ素子の搭載面である一対の接続電極３ｂ、３ｂとなっている。従って、端子電極３ｃは接続電極３ｂと導通している。また、側面のリードフレーム３、３からは隣接する両側面にも延伸しており、各々一対の側面電極３ｄ、３ｄを露出させてある。
【００１７】
５はＬＥＤ素子であり、６はＬＥＤ素子５を封止している透明な封止樹脂である。７はＬＥＤ素子５をフリップチップボンディングしたサブマウント基板であり、８はサブマウント基板７を接続電極３ｂに接合しているクリーム半田である。ＬＥＤ素子５はサブマウント基板８を介して、接続電極３ｂに搭載されている。９はシリコーン円板より成る蓋部材であり、パッケージ２の凹部２ｅ上面の段部２ｇに被せてカシメによって固定されている。蓋部材９には必要に応じて色度補正のための蛍光体や着色剤を含有させて、ＬＥＤ１に所望の発光色を得ることができる。
【００１８】
次に、このＬＥＤ１の製造方法について説明する。図４は第一の実施の形態であるＬＥＤ１の製造方法を示す工程図である。図４（ａ）の工程において、１０は帯材であり、帯材１０に１個取り順送型で抜き曲げを行う。まず反射面３ａを絞り、次に隙間２ａ及び外形を抜き落とし、平面的なリードフレーム３を形成する。次に、曲げ加工で立体形状のリードフレーム３を形成する。なお、この工程は例えば５個などの多数個取り順送型を用いて行うこともできる。最後に、リードフレーム３にメッキを施す。
【００１９】
次に、図４（ｂ）のインサート成形工程に移行する。ここでは帯材１０ごと成形型に挿入して、反射面３ａ、接続電極３ｂ、端子電極３ｃを表面に露出するように凹部２ｅを有する樹脂成形部４を成形する。次に、図４（ｃ）のＬＥＤ素子搭載工程へ移行する。ＬＥＤ素子５の電極を帯材１０上の接続電極３ｂへ搭載しクリーム半田８により接合する。次に、図４（ｄ）の封止工程に移行する。ここでは、凹部２ｅの上面に蓋部材９をカシメにて固定する。
【００２０】
最後に、図４（ｅ）の単体化工程に移行する。帯材１０からリードフレーム３のタブを切断することによって単体の完成ＬＥＤ１を取り出す。
【００２１】
次に、本発明の第一の実施の形態であるＬＥＤ１の作用効果について説明する。まず、ＬＥＤ素子５の搭載面である接続電極３ｂと端子電極３ｃが連続しており、その距離が近いので、ＬＥＤ素子５から放出される熱がマザーボードへ伝導し易く、放熱性に優れている。また、ＬＥＤ１の製造は帯材１０を用いて多数個取りで連続的に行えるので、生産性が向上し製造コストを削減できる。反射面３ａを光沢メッキを施したリードフレーム３で形成することにより、光の反射効率を向上させることができる。また、パッケージ２の側面にも側面電極３ｄを設けてあるので、ＬＥＤ５をマザーボードに実装する場合に上向きにも横向きにも実装することができる。
【００２２】
次に、本発明の第二の実施の形態の構成について説明する。図５は本発明の第二の実施の形態であるＬＥＤの縦断面図であり、図６はこのＬＥＤ用パッケージを斜め上方から見た斜視図であり、図７は同じく斜め下方から見た斜視図である。図８はこのパッケージのリードフレームを斜め下方から見た斜視図である。
【００２３】
図５において、２１はＬＥＤであり、２２はＬＥＤ２１用のパッケージであり、２３は第一の実施の形態と同様に形成されたリードフレームである。但し、このリードフレーム２３が第一の実施の形態のリードフレーム３に対して異なるところは、二つの端子電極２３ｃに新たに四つの端子電極２３ｅが加わっているところである。四つの端子電極２３ｅは図８に示すように、片側の二つは片側の接続電極２３ｂの両端に接続している。従って、片側の電極に三つの端子電極２３ｃ、２３ｅ、２３ｅの何れか一つ、または同時に二つか、三つを用いることができる。
【００２４】
その他の構成は第一の実施の形態のパッケージと同様であるから、同じ構成要素には同じ符号と名称とを用いて詳細な説明を省略する。また、ＬＥＤ２１の製造方法は第一の実施の形態で説明したものと同様であり、説明を省略する。次に、本発明の第二の実施の形態の作用効果について説明する。四つの端子電極を増設したので、接続電極２３ｂに連続するリードフレーム２３の面積が増加して、ＬＥＤ素子５の放熱性が向上する。また、ＬＥＤ２１をマザーボードに実装する際に、配線パターンの配設の自由度が大きくなる。その他、第一の実施の形態の場合と同様の効果がある。
【００２５】
次に、本発明の第三の実施の形態の構成について説明する。図９は本発明の第三の実施の形態であるＬＥＤの縦断面図である。図１０はこのＬＥＤのパッケージを斜め上方から見た斜視図であり、図１１は同じく斜め下方から見た斜視図である。図９において、３１はＬＥＤであり、３２はＬＥＤ３１用のパッケージであり、３３は第一の実施の形態と同様に形成されたリードフレームである。
【００２６】
このリードフレーム３３が第一の実施の形態のリードフレーム３に対して異なるところは、接続電極３３ｂが反射面３３ａ下端と一体に形成されており、しかも接続電極３３ｂの下面がパッケージ３２下面３２ｆに露出しているところである。二つの端子電極３３ｃは、反射面３３ａの上端を介して接続電極３３ｂと接続している。その他の構成は第一の実施の形態のパッケージと同様であるから、同じ構成要素には同じ符号と名称とを用いて詳細な説明を省略する。また、ＬＥＤ３１の製造方法は第一の実施の形態で説明したものと同様であり、説明を省略する。
【００２７】
次に、本発明の第三の実施の形態の作用効果について説明する。接続電極３３ｂ下面が直接マザーボードに接触する構造なので、より一層ＬＥＤ素子５の放熱性に優れている。その他、第一の実施の形態の場合と同様の効果がある。
【００２８】
なお、本発明は、以上説明した実施の形態に限定されるものではなく、例えば、光反射面３ａ、２３ａ、３３ａとなる凹部２ｅ、２２ｅ、３２ｅの内面を略円錐形状、略球面形状、若しくは略放物面形状等に形成してもよい。これらの形状を採用することで、ＬＥＤの出射光の直行性がより向上する。ＬＥＤ素子５はサブマウント基板７を介すことなく直接接続電極３ｂ、２３ｂ、３３ｂに接合される場合もある。また、ＬＥＤ素子５の実装はワイヤボンディングであってもよい。
【００２９】
【発明の効果】
以上説明したように、本発明によれば、一面に発光ダイオード素子を収納する凹部を設けた略立方体形状の樹脂に一対のリードフレームを埋設して形成したパッケージの、前記凹部底面に前記リードフレームにより形成された接続電極を露出させ、他の一面に該接続電極と導通する端子電極を露出させたパッケージの前記接続電極に発光ダイオード素子を搭載し封止して成る発光ダイオードにおいて、前記凹部表面に隙間を隔てて対向するように露出させた両反射面は前記一対のリードフレームと一体形成したので、光の利用効率、放熱性に優れ、生産効率の高いＬＥＤ及びそのパッケージ構造を得ることができた。
【図面の簡単な説明】
【図１】本発明の第一の実施の形態であるＬＥＤの縦断面図である。
【図２】本発明の第一の実施の形態であるＬＥＤ用パッケージを斜め上方から見た斜視図である。
【図３】本発明の第一の実施の形態であるＬＥＤ用パッケージを斜め下方から見た斜視図である。
【図４】本発明の第一の実施の形態であるＬＥＤの製造方法を示す工程図である。
【図５】本発明の第二の実施の形態であるＬＥＤの縦断面図である。
【図６】本発明の第二の実施の形態であるＬＥＤ用パッケージを斜め上方から見た斜視図である。
【図７】本発明の第二の実施の形態であるＬＥＤ用パッケージを斜め下方から見た斜視図である。
【図８】本発明の第二の実施の形態であるＬＥＤ用パッケージのリードフレームを斜め下方から見た斜視図である。
【図９】本発明の第三の実施の形態であるＬＥＤの縦断面図である。
【図１０】本発明の第三の実施の形態であるＬＥＤ用パッケージを斜め上方から見た斜視図である。
【図１１】本発明の第三の実施の形態であるＬＥＤ用パッケージを斜め下方から見た斜視である。
【図１２】従来のＬＥＤの縦断面図である。
【符号の説明】
１、２１、３１ 発光ダイオード
２、２２、３２ パッケージ
２ａ、２２ａ、３２ａ 隙間
２ｃ、２２ｃ、３２ｃ 上面
２ｄ、２２ｄ、３２ｄ 底面
２ｅ、２２ｅ、３２ｅ 凹部
３、２３、３３ リードフレーム
３ａ、２３ａ、３３ａ 反射面
３ｂ、２３ｂ、３３ｂ 接続電極
３ｃ、２３ｃ、３３ｃ 端子電極
４ 樹脂成形部
５ 発光ダイオード素子
７ サブマウント基板
９ 蓋部材[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting diode (hereinafter abbreviated as LED) and a package structure thereof.
[0002]
[Prior art]
An LED is a PN junction formed on a compound semiconductor wafer such as AlInGaP or GaN, and emits visible light or near-infrared light through a forward current. In recent years, display, communication, measurement, and control are performed. Widely applied to On the other hand, recent electronic devices are pursuing smaller size and lighter weight as well as higher performance and more functions. Furthermore, the range of application is expanding especially in fields where heat dissipation and reliability are important. For this reason, electronic components used in electronic devices are often components (SMD) that can be surface-mounted on a printed wiring board. Such electronic parts generally have a substantially cubic shape, and are mounted on a wiring pattern on a printed wiring board by a fixing means such as reflow soldering. LEDs that meet these requirements have also been developed (see, for example, Patent Document 1).
[0003]
An outline of such a conventional LED will be described with reference to the drawings. FIG. 12 is a longitudinal sectional view of a conventional SMD type LED. In FIG. 12, reference numeral 70 denotes a substantially cubic SMD type LED. Reference numeral 71 denotes a package formed by applying Ag or the like to a lead frame made of phosphor bronze that has been press-molded in advance, and insert-molding it into a three-dimensional shape using a white molding resin so as to include the light reflecting surface 71a.
[0004]
Reference numeral 72 denotes one electrode pattern which is a lead frame extending from the upper electrode 72a via the side electrode 72b to the lower terminal electrode 72c, and 73 is a lower terminal electrode similarly from the upper electrode 73a via the side electrode 73b. The other electrode pattern reaches 73c. 74 is an LED element in which one electrode is die-bonded to the upper surface electrode 72a with a conductive resin. Reference numeral 75 denotes a wire made of Au wire or the like, and the other electrode of the LED element 74 and the upper surface electrode 73a are connected by wire bonding using the wire 75. 76 is made of a translucent epoxy resin or the like that is sealed in order to protect the LED element 74, the connection portion of the LED element 74, the wire 75, and the like, and to make the LED element 74 emit light effectively. It is a sealing resin.
[0005]
[Patent Document 1]
JP-A-10-242526 [0006]
[Problems to be solved by the invention]
However, in the conventional SMD type LED 70, the heat released from the LED element 74 is received only by the lead frame through the wire, so that the heat dissipation is insufficient. In addition, the refractive index changes due to the effect of resin sealing, and there is a problem that the reflection efficiency of light emitted from the LED element 74 is not utilized well.
[0007]
The present invention has been made to solve such a conventional problem, and an object thereof is to provide an LED comprising a lead frame having excellent heat dissipation and a package structure thereof.
[0008]
[Means for Solving the Problems]
The means of the present invention for achieving the above-described object is characterized in that a package formed by embedding a pair of lead frames in a substantially cubic resin provided with a recess for accommodating a light emitting diode element on one side is formed on the bottom surface of the recess. In the light emitting diode formed by mounting and sealing a light emitting diode element on the connection electrode of the package in which the connection electrode formed by the lead frame is exposed and the terminal electrode electrically connected to the connection electrode is exposed on the other surface. The lead frame exposes both reflective surfaces so as to face the concave surface with a gap, extends from the upper end of the reflective surface toward opposite side surfaces of the package, and further from the both side surfaces to the other side of the package. The terminal electrode is exposed and bent over the lower surface, which is one surface, and the portion exposed on the lower surface becomes the terminal electrode. And in contact with the reflective surface lower end exposed on the bottom surface of the recess, characterized in that it is integrally formed so that the connection electrode.
[0009]
Further, the upper surface of the recess is covered with a silicone plate and fixed by caulking.
[0010]
In addition, the silicone plate may contain a phosphor or a colorant to correct chromaticity.
[0011]
The light emitting diode element is mounted via a submount substrate.
[0012]
Further, the lead frame is surface-treated by glossy silver plating.
[0013]
Another means of the present invention for achieving the above-mentioned object is a package formed by embedding a lead frame in a substantially cubic resin provided with a recess for accommodating a light emitting diode element on one side, the bottom surface of the recess In the package structure of a light emitting diode in which a connection electrode for connecting a light emitting diode element formed by the lead frame is exposed and a terminal electrode connected to the connection electrode is exposed on the other surface, the lead frame has a surface of the recess. Both reflective surfaces are exposed so as to be opposed to each other with a gap therebetween, extending from the upper end of the reflective surface toward opposite side surfaces of the package, and further from the both side surfaces to the lower surface which is the other surface of the package. The terminal electrode is exposed and bent and exposed to the lower surface, and this terminal electrode is subsequently bent and stretched to form the reflection surface. In contact with an end exposed on the bottom surface of the recess, characterized in that it is integrally formed so that the connection electrode.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a longitudinal sectional view of an SMD type LED which is a first embodiment of the present invention. FIG. 2 is a perspective view of the LED package as viewed obliquely from above, and FIG. 3 is a perspective view of the LED package as viewed obliquely from below.
[0015]
1 to 3, reference numeral 1 denotes an SMD type LED whose outer shape is a substantially cubic shape, and reference numeral 2 denotes a package of the LED 1. Reference numerals 3 and 3 denote a pair of lead frames which are integrally formed in a symmetrical three-dimensional shape from a copper plate or an aluminum plate and surface-treated by glossy silver plating. Reference numeral 4 denotes a resin molding portion, in which the lead frames 3 and 3 are embedded by insert molding so as to face each other with a gap 2a therebetween. On the upper surface 2c, which is one surface of the package 2, a substantially mortar-shaped recess 2e having an inclined surface 2b and a flat bottom surface 2d and opened upward is formed.
[0016]
The lead frames 3 and 3 extend from the upper end of the reflective surface 3a exposed on the surface of the recess 2e toward the opposite side surfaces of the package 2, and are further exposed on the surface from the both side surfaces to the lower surface 2f which is the other surface of the package 2. The portions that are bent and exposed to the lower surface 2f are the terminal electrodes 3c and 3c. The terminal electrodes 3c and 3c continue to bend and extend, come into contact with the lower end of the reflective surface 3a and are exposed on the bottom surface 2d of the recess 2e, and form a pair of connection electrodes 3b and 3b which are LED element mounting surfaces. Therefore, the terminal electrode 3c is electrically connected to the connection electrode 3b. Further, the side lead frames 3 and 3 also extend to both adjacent side surfaces, and a pair of side electrodes 3d and 3d are exposed.
[0017]
Reference numeral 5 denotes an LED element, and reference numeral 6 denotes a transparent sealing resin that seals the LED element 5. Reference numeral 7 denotes a submount substrate on which the LED element 5 is flip-chip bonded, and reference numeral 8 denotes cream solder that joins the submount substrate 7 to the connection electrode 3b. The LED element 5 is mounted on the connection electrode 3 b via the submount substrate 8. Reference numeral 9 denotes a lid member made of a silicone disk, which is fixed by caulking over a step 2g on the upper surface of the recess 2e of the package 2. The lid member 9 can contain a phosphor or a colorant for chromaticity correction as needed, and the LED 1 can obtain a desired emission color.
[0018]
Next, the manufacturing method of this LED1 is demonstrated. FIG. 4 is a process diagram showing a manufacturing method of the LED 1 according to the first embodiment. In the process of FIG. 4A, reference numeral 10 denotes a band material, and a single piece of the band material 10 is punched and bent using a progressive die. First, the reflecting surface 3a is squeezed, and then the gap 2a and the outer shape are removed to form a flat lead frame 3. Next, a three-dimensional lead frame 3 is formed by bending. In addition, this process can also be performed using a multi-piece progressive type, such as five. Finally, the lead frame 3 is plated.
[0019]
Next, the process proceeds to the insert molding step of FIG. Here, the entire band material 10 is inserted into a molding die, and the resin molding portion 4 having the recess 2e is molded so that the reflecting surface 3a, the connection electrode 3b, and the terminal electrode 3c are exposed on the surface. Next, the process proceeds to the LED element mounting step of FIG. The electrode of the LED element 5 is mounted on the connection electrode 3 b on the strip 10 and bonded by cream solder 8. Next, the process proceeds to the sealing step of FIG. Here, the lid member 9 is fixed to the upper surface of the recess 2e by caulking.
[0020]
Finally, the process proceeds to the unitization process of FIG. A single completed LED 1 is taken out by cutting the tab of the lead frame 3 from the strip 10.
[0021]
Next, the effect of LED1 which is 1st embodiment of this invention is demonstrated. First, the connection electrode 3b, which is the mounting surface of the LED element 5, and the terminal electrode 3c are continuous, and since the distance is short, the heat released from the LED element 5 is easy to conduct to the mother board and is excellent in heat dissipation. . Moreover, since manufacture of LED1 can be continuously performed by picking many pieces using the strip | belt material 10, productivity improves and manufacturing cost can be reduced. The reflection efficiency of light can be improved by forming the reflection surface 3a with the lead frame 3 having gloss plating. Further, since the side electrode 3d is also provided on the side surface of the package 2, when the LED 5 is mounted on the mother board, it can be mounted upward or sideways.
[0022]
Next, the configuration of the second embodiment of the present invention will be described. FIG. 5 is a longitudinal sectional view of an LED according to a second embodiment of the present invention. FIG. 6 is a perspective view of the LED package as viewed from obliquely above. FIG. 7 is a perspective view of the LED package as viewed obliquely from below. FIG. FIG. 8 is a perspective view of the lead frame of this package as viewed obliquely from below.
[0023]
In FIG. 5, 21 is an LED, 22 is a package for the LED 21, and 23 is a lead frame formed in the same manner as in the first embodiment. However, the lead frame 23 differs from the lead frame 3 of the first embodiment in that four terminal electrodes 23e are newly added to the two terminal electrodes 23c. As shown in FIG. 8, the four terminal electrodes 23e are connected to both ends of the connection electrode 23b on one side. Therefore, any one of the three terminal electrodes 23c, 23e, and 23e, or two or three at the same time can be used for the electrode on one side.
[0024]
Since the other configuration is the same as that of the package of the first embodiment, the same components are denoted by the same reference numerals and names, and detailed description thereof is omitted. Moreover, the manufacturing method of LED21 is the same as that of what was demonstrated in 1st embodiment, and abbreviate | omits description. Next, the function and effect of the second embodiment of the present invention will be described. Since the four terminal electrodes are added, the area of the lead frame 23 continuous to the connection electrode 23b is increased, and the heat dissipation of the LED element 5 is improved. Further, when the LED 21 is mounted on the mother board, the degree of freedom in arranging the wiring pattern is increased. In addition, there are the same effects as in the case of the first embodiment.
[0025]
Next, the configuration of the third embodiment of the present invention will be described. FIG. 9 is a longitudinal sectional view of an LED according to the third embodiment of the present invention. FIG. 10 is a perspective view of the LED package as viewed obliquely from above, and FIG. 11 is a perspective view of the LED package as viewed obliquely from below. In FIG. 9, 31 is an LED, 32 is a package for the LED 31, and 33 is a lead frame formed in the same manner as in the first embodiment.
[0026]
The lead frame 33 differs from the lead frame 3 of the first embodiment in that the connection electrode 33b is formed integrally with the lower end of the reflection surface 33a, and the lower surface of the connection electrode 33b is formed on the lower surface 32f of the package 32. It is exposed. The two terminal electrodes 33c are connected to the connection electrode 33b via the upper end of the reflection surface 33a. Since the other configuration is the same as that of the package of the first embodiment, the same components are denoted by the same reference numerals and names, and detailed description thereof is omitted. Moreover, the manufacturing method of LED31 is the same as that of what was demonstrated in 1st embodiment, and description is abbreviate | omitted.
[0027]
Next, the function and effect of the third embodiment of the present invention will be described. Since the lower surface of the connection electrode 33b is in direct contact with the motherboard, the heat dissipation of the LED element 5 is further improved. In addition, there are the same effects as in the case of the first embodiment.
[0028]
The present invention is not limited to the embodiment described above. For example, the inner surfaces of the recesses 2e, 22e, and 32e that become the light reflecting surfaces 3a, 23a, and 33a are substantially conical, spherical, or You may form in substantially paraboloid shape etc. By adopting these shapes, the directness of the emitted light of the LED is further improved. The LED element 5 may be directly bonded to the connection electrodes 3b, 23b, and 33b without passing through the submount substrate 7. Further, the LED element 5 may be mounted by wire bonding.
[0029]
【The invention's effect】
As described above, according to the present invention, the lead frame is formed on the bottom surface of the concave portion of the package formed by embedding a pair of lead frames in a substantially cubic resin having a concave portion for housing the light emitting diode element on one surface. A light emitting diode in which a light emitting diode element is mounted and sealed on the connection electrode of the package in which the connection electrode formed by the step is exposed and a terminal electrode electrically connected to the connection electrode is exposed on the other surface; Since the two reflecting surfaces exposed so as to face each other with a gap are formed integrally with the pair of lead frames, it is possible to obtain an LED having excellent light utilization efficiency and heat dissipation and high production efficiency and its package structure. did it.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of an LED according to a first embodiment of the present invention.
FIG. 2 is a perspective view of the LED package according to the first embodiment of the present invention as viewed obliquely from above.
FIG. 3 is a perspective view of the LED package according to the first embodiment of the present invention when viewed obliquely from below.
FIG. 4 is a process chart showing the LED manufacturing method according to the first embodiment of the present invention.
FIG. 5 is a vertical cross-sectional view of an LED according to a second embodiment of the present invention.
FIG. 6 is a perspective view of an LED package according to a second embodiment of the present invention as viewed obliquely from above.
FIG. 7 is a perspective view of an LED package according to a second embodiment of the present invention viewed obliquely from below.
FIG. 8 is a perspective view of the lead frame of the LED package according to the second embodiment of the present invention as viewed obliquely from below.
FIG. 9 is a longitudinal sectional view of an LED according to a third embodiment of the present invention.
FIG. 10 is a perspective view of an LED package according to a third embodiment of the present invention viewed obliquely from above.
FIG. 11 is a perspective view of an LED package according to a third embodiment of the present invention viewed obliquely from below.
FIG. 12 is a longitudinal sectional view of a conventional LED.
[Explanation of symbols]
1, 21, 31 Light emitting diode 2, 22, 32 Package 2a, 22a, 32a Gap 2c, 22c, 32c Top surface 2d, 22d, 32d Bottom surface 2e, 22e, 32e Recess 3, 23, 33 Lead frame 3a, 23a, 33a Reflection Surface 3b, 23b, 33b Connection electrode 3c, 23c, 33c Terminal electrode 4 Resin molding part 5 Light emitting diode element 7 Submount substrate 9 Lid member

Claims (6)

一面に発光ダイオード素子を収納する凹部を設けた略立方体形状の樹脂に一対のリードフレームを埋設して形成したパッケージの、前記凹部底面に前記リードフレームにより形成された接続電極を露出させ、他の一面に該接続電極と導通する端子電極を露出させたパッケージの前記接続電極に発光ダイオード素子を搭載し封止して成る発光ダイオードにおいて、前記リードフレームは前記凹部表面に隙間を隔てて対向するように両反射面を露出させ、この反射面上端から前記パッケージの対向する両側面に向かって延伸し、更に前記両側面から前記パッケージの他の一面である下面にかけて表面に露出して屈曲し、下面に露出したところが前記端子電極となり、この端子電極は引き続き屈曲延伸して前記反射面下端に接触して前記凹部の底面に露出し、前記接続電極となるように一体形成されていることを特徴とする発光ダイオード。A connection electrode formed by the lead frame is exposed on the bottom surface of the recess of a package formed by embedding a pair of lead frames in a substantially cubic resin provided with a recess for housing the light emitting diode element on one side, In a light-emitting diode in which a light-emitting diode element is mounted and sealed on the connection electrode of the package with a terminal electrode that is electrically connected to the connection electrode exposed on one surface, the lead frame is opposed to the surface of the recess with a gap. The two reflecting surfaces are exposed, and extend from the upper end of the reflecting surface toward the opposite side surfaces of the package, and further, exposed and bent on the surface from the both side surfaces to the lower surface which is the other surface of the package. The terminal electrode is exposed to the terminal electrode, and the terminal electrode continues to bend and extend to come into contact with the lower end of the reflecting surface to contact the bottom surface of the recess. Exposed, light-emitting diodes, characterized in that it is integrally formed so that the connection electrode. 前記凹部上面にシリコーン板を被せてカシメにより固定したことを特徴とする請求項１記載の発光ダイオード。  The light-emitting diode according to claim 1, wherein a silicone plate is placed on the upper surface of the recess and fixed by caulking. 前記シリコーン板に蛍光体または着色剤を含有させて色度補正したことを特徴とする請求項２記載の発光ダイオード。  3. The light emitting diode according to claim 2, wherein the silicone plate contains a phosphor or a colorant to correct chromaticity. 前記発光ダイオード素子はサブマウント基板を介して搭載されていることを特徴とする請求項１乃至請求項３記載の発光ダイオード。The light emitting diode device according to claim 1 to claim 3, wherein the light-emitting diodes, characterized in that it is mounted through a sub-mount substrate. 前記リードフレームは光沢銀メッキにより表面処理されていることを特徴とする請求項１乃至請求項４のいずれかに記載の発光ダイオード。The lead frame is a light emitting diode according to any one of claims 1 to 4, characterized in that it is surface-treated by bright silver plating. 一面に発光ダイオード素子を収納する凹部を設けた略立方体形状の樹脂にリードフレームを埋設して形成したパッケージであって、前記凹部底面に前記リードフレームにより形成された発光ダイオード素子を接続する接続電極を露出させ、他の一面に該接続電極と導通する端子電極を露出させた発光ダイオードのパッケージ構造において、前記リードフレームは前記凹部表面に隙間を隔てて対向するように両反射面を露出させ、この反射面上端から前記パッケージの対向する両側面に向かって延伸し、更に前記両側面から前記パッケージの他の一面である下面にかけて表面に露出して屈曲し、下面に露出したところが前記端子電極となり、この端子電極は引き続き屈曲延伸して前記反射面下端に接触して前記凹部の底面に露出し、前記接続電極となるように一体形成されていることを特徴とする発光ダイオードのパッケージ構造。  A connection electrode formed by embedding a lead frame in a substantially cubic resin having a recess for housing a light emitting diode element on one surface, and connecting the light emitting diode element formed by the lead frame to the bottom surface of the recess In the light emitting diode package structure in which the terminal electrode that is electrically connected to the connection electrode is exposed on the other surface, the lead frame exposes both reflective surfaces so as to face the concave surface with a gap, Extending from the upper end of the reflecting surface toward the opposite side surfaces of the package, and further exposed and bent on the surface from the both side surfaces to the lower surface which is the other surface of the package, the portion exposed on the lower surface becomes the terminal electrode. The terminal electrode continues to bend and extend, comes into contact with the lower end of the reflecting surface, and is exposed at the bottom surface of the concave portion. Package structure of light emitting diodes, characterized in that it is integrally formed so as to.
JP2003129635A 2003-05-07 2003-05-07 Light emitting diode and its package structure Expired - Fee Related JP4341951B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003129635A JP4341951B2 (en) 2003-05-07 2003-05-07 Light emitting diode and its package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003129635A JP4341951B2 (en) 2003-05-07 2003-05-07 Light emitting diode and its package structure

Publications (2)

Publication Number Publication Date
JP2004335740A JP2004335740A (en) 2004-11-25
JP4341951B2 true JP4341951B2 (en) 2009-10-14

Family

ID=33505371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003129635A Expired - Fee Related JP4341951B2 (en) 2003-05-07 2003-05-07 Light emitting diode and its package structure

Country Status (1)

Country Link
JP (1) JP4341951B2 (en)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6346724B2 (en) * 2004-11-30 2018-06-20 日亜化学工業株式会社 Surface mount type light emitting device and manufacturing method thereof
KR100867515B1 (en) * 2004-12-06 2008-11-07 삼성전기주식회사 Light emitting device package
KR100624449B1 (en) 2004-12-08 2006-09-18 삼성전기주식회사 Semiconductor emitting device with approved and manufacturing method for the same
US20070145386A1 (en) 2004-12-08 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
EP2280430B1 (en) 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR100646155B1 (en) 2005-04-14 2006-11-14 주식회사 코스텍시스 a LED module
KR100665182B1 (en) 2005-06-03 2007-01-09 삼성전기주식회사 High power led package and fabrication method thereof
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
TW200711190A (en) * 2005-08-17 2007-03-16 Matsushita Electric Ind Co Ltd Surface mounted semiconductor device and method for manufacturing same
KR100634189B1 (en) 2005-08-31 2006-10-16 루미마이크로 주식회사 Thin light emitting diode package and method for manufacturing the same
DE102006032416A1 (en) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Radiation-emitting component
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7365407B2 (en) * 2006-05-01 2008-04-29 Avago Technologies General Ip Pte Ltd Light emitting diode package with direct leadframe heat dissipation
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
KR100854328B1 (en) * 2006-07-07 2008-08-28 엘지전자 주식회사 LED package and method for making the same
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
KR101220038B1 (en) * 2006-09-11 2013-01-18 엘지이노텍 주식회사 Lighting device
JP4846498B2 (en) * 2006-09-22 2011-12-28 株式会社東芝 Optical semiconductor device and method for manufacturing optical semiconductor device
KR101456266B1 (en) * 2006-12-08 2014-11-04 서울반도체 주식회사 Light emitting device
WO2008069605A1 (en) * 2006-12-08 2008-06-12 Seoul Semiconductor Co., Ltd. Light emitting device
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP4976167B2 (en) * 2007-03-06 2012-07-18 豊田合成株式会社 Light emitting device
JP4976168B2 (en) * 2007-03-06 2012-07-18 豊田合成株式会社 Light emitting device
JP2008218764A (en) * 2007-03-06 2008-09-18 Toyoda Gosei Co Ltd Light-emitting device
JP5060172B2 (en) * 2007-05-29 2012-10-31 岩谷産業株式会社 Semiconductor light emitting device
KR100855065B1 (en) * 2007-04-24 2008-08-29 삼성전기주식회사 Light emitting diode package
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
JP5230192B2 (en) * 2007-12-27 2013-07-10 豊田合成株式会社 Light emitting device
JP2010003743A (en) * 2008-06-18 2010-01-07 Toshiba Corp Light-emitting device
KR100986202B1 (en) 2008-07-01 2010-10-07 알티전자 주식회사 Side view light-emitting diode package
JP5217800B2 (en) 2008-09-03 2013-06-19 日亜化学工業株式会社 Light emitting device, resin package, resin molded body, and manufacturing method thereof
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US9685592B2 (en) 2009-01-14 2017-06-20 Cree Huizhou Solid State Lighting Company Limited Miniature surface mount device with large pin pads
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
JP4730450B2 (en) 2009-03-12 2011-07-20 株式会社デンソー Light source device
JP2010238833A (en) * 2009-03-31 2010-10-21 Panasonic Corp Package for optical semiconductor device, and optical semiconductor device
US9385285B2 (en) 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
KR101129585B1 (en) 2010-04-08 2012-03-28 우리엘이디 주식회사 Light emitting device
CN102934228B (en) * 2011-03-02 2017-09-01 惠州科锐半导体照明有限公司 Light emission diode package member and light emitting diode
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
JP6042701B2 (en) * 2012-11-14 2016-12-14 株式会社三井ハイテック Lead frame manufacturing method
KR102127440B1 (en) * 2013-06-27 2020-06-26 엘지이노텍 주식회사 Light Emitting Device Package
KR102201199B1 (en) * 2014-07-08 2021-01-11 엘지이노텍 주식회사 Light emitting device package
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
JP6354809B2 (en) * 2016-08-16 2018-07-11 日亜化学工業株式会社 Method for manufacturing light emitting device and composite substrate
CN109873072B (en) * 2017-12-01 2021-09-21 光宝科技新加坡私人有限公司 Light emitting device, light emitting diode packaging structure and manufacturing method thereof
CN108682731A (en) * 2018-07-18 2018-10-19 易美芯光（北京）科技有限公司 A kind of LED encapsulation structure with upside-down mounting SMD

Also Published As

Publication number Publication date
JP2004335740A (en) 2004-11-25

Similar Documents

Publication Publication Date Title
JP4341951B2 (en) Light emitting diode and its package structure
JP4711715B2 (en) Semiconductor light emitting device and semiconductor light emitting unit
US10593846B2 (en) Semiconductor light-emitting device, method for producing same, and display device
JP4359195B2 (en) Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting unit
CN101916809B (en) Semiconductor light-emitting device
US7615799B2 (en) Light-emitting diode package structure
JP4870233B1 (en) Chip LED
JP2005294736A (en) Manufacturing method for semiconductor light emitting device
JP2010003743A (en) Light-emitting device
EP1898473A1 (en) Package structure of semiconductor light-emitting device
JP2003218398A (en) Surface mount type light emitting diode and its manufacturing method
JPH1187780A (en) Light emitting device
JP3991624B2 (en) Surface mount type light emitting device and manufacturing method thereof
JP2004207367A (en) Light emitting diode and light emitting diode arrangement plate
WO2007108667A1 (en) Package structure of light emitting diode and method of manufacturing the same
JP4976168B2 (en) Light emitting device
JP4242194B2 (en) Semiconductor light emitting device and manufacturing method thereof
JP2008103401A (en) Package for upper/lower electrode type light emitting diode, and its manufacturing method
WO2008038997A1 (en) Light emitting diode package employing leadframe with plated layer of high brightness
JP2007335734A (en) Semiconductor device
JP2015015327A (en) Led module and luminaire equipped with the same
JP4144676B2 (en) Manufacturing method of chip type light emitting diode
WO2020116452A1 (en) Optical semiconductor device
KR20060053468A (en) Led package having multitude led
KR100638881B1 (en) Led assembly having led package inserted into metal board

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20051114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060425

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090416

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090608

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090706

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090706

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150717

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees