JP6042701B2 - Lead frame manufacturing method - Google Patents

Lead frame manufacturing method Download PDF

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JP6042701B2
JP6042701B2 JP2012250328A JP2012250328A JP6042701B2 JP 6042701 B2 JP6042701 B2 JP 6042701B2 JP 2012250328 A JP2012250328 A JP 2012250328A JP 2012250328 A JP2012250328 A JP 2012250328A JP 6042701 B2 JP6042701 B2 JP 6042701B2
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lead frame
plating
silver plating
strip
lead
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JP2014099496A (en
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石橋　貴弘
貴弘 石橋
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Mitsui High Tech Inc
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Description

本発明は、リードフレームの製造方法に関し、詳しくはＬＥＤパッケージ用のリードフレームを製造するための方法に関わるものである。 The present invention relates to a method for manufacturing a lead frame, and more particularly to a method for manufacturing a lead frame for an LED package.

昨今、図５に示す如き構成のＬＥＤパッケージ、詳しくは、ＱＦＮタイプ（Quad Flat Non-leaded Package）と称されるＬＥＤパッケージが広く提供されている（例えば、特許文献１参照）。 Recently, an LED package having a configuration as shown in FIG. 5, specifically, an LED package called a QFN type (Quad Flat Non-leaded Package) has been widely provided (for example, see Patent Document 1).

このＬＥＤパッケージＡは、リードフレームＬＦの上面にＬＥＤチップＣが搭載され、該ＬＥＤチップＣと上記リードフレームＬＦ（リード部ＬＦａ、チップ搭載部ＬＦｂ）とは、ボンディングワイヤＷ，Ｗを介して互いに接続され、上記ＬＥＤチップＣの周囲には白色樹脂によってリフレクタ部Ｒが形成されているとともに、上記ＬＥＤチップＣは透明樹脂から成る透光部Ｈによってモールドされている。 In this LED package A, an LED chip C is mounted on the upper surface of a lead frame LF, and the LED chip C and the lead frame LF (lead portion LFa, chip mounting portion LFb) are mutually connected via bonding wires W and W. A reflector portion R is formed of white resin around the LED chip C, and the LED chip C is molded by a translucent portion H made of a transparent resin.

ここで、上記リードフレームＬＦ（リード部ＬＦａ、チップ搭載部ＬＦｂ）の表面には、導体部分の酸化を防止するという主たる機能と併せ、ＬＥＤチップＣからの発光を殆ど反射させることにより、ＬＥＤパッケージＡにおける発光出力の低下を防止するべく、特に高光沢銀メッキＳを用いた被覆が為されている。 Here, the light emitting from the LED chip C is almost reflected on the surface of the lead frame LF (lead part LFa, chip mounting part LFb) together with the main function of preventing the oxidation of the conductor part, thereby the LED package. In order to prevent a decrease in light emission output at A, coating using high gloss silver plating S is performed.

上述したＬＥＤパッケージＡを構成しているリードフレームＬＦを製造するには、先ず、図６（ａ）に示す如く、例えば銅材等の薄板から成る金属条材Ｍを用意する。 To manufacture the lead frame LF constituting the LED package A described above, first, as shown in FIG. 6A, a metal strip M made of a thin plate such as a copper material is prepared.

次いで、図６（ｂ）に示す如く、上記金属条材Ｍに対してプレス加工またはエッチング加工により、個々のリードフレームＬＦにおけるパターンを形成、詳しくは、複数のリードフレームＬＦをマトリクス状に配置したリードフレーム群ＬＵを形成して、リードフレ
ーム条材ＬＭを作成する。 Next, as shown in FIG. 6B, a pattern in each lead frame LF is formed by pressing or etching the metal strip M. Specifically, a plurality of lead frames LF are arranged in a matrix. A lead frame group LU is formed to create a lead frame strip LM.

こののち、図６（ｃ）に示す如く、上記リードフレーム条材ＬＭの全面に亘って高光沢銀メッキＳを施して完成となる。 After that, as shown in FIG. 6C, high gloss silver plating S is applied over the entire surface of the lead frame strip LM to complete.

因みに、図７に示す如く、上記リードフレーム条材ＬＭは、リード部ＬＦａとチップ搭載部ＬＦｂとから成るリードフレームＬＦが縦横に配列形成され、隣り合うリードフレームＬＦ同士や、リードフレームＬＦと外枠Ｌｆとは、複数のタイバーＬｔ、Ｌｔ…を介して互いに接続されている。 Incidentally, as shown in FIG. 7, the lead frame strip LM has a lead frame LF composed of a lead portion LFa and a chip mounting portion LFb arranged vertically and horizontally so that the adjacent lead frames LF and the lead frame LF are separated from each other. The frame Lf is connected to each other via a plurality of tie bars Lt, Lt.

特開２０１１−１４６５２４号公報JP 2011-146524 A

ところで、上記ＬＥＤパッケージＡを構成するリードフレームＬＦの表面に施されている高光沢銀メッキＳは、所望する十分な光沢度を確保しながら、リードフレーム条材ＬＭにおける銅の拡散を防止するために、通常のメッキよりも厚い膜厚ｔｓ（図５参照）を必要とせざるを得ない。 By the way, the high-gloss silver plating S applied to the surface of the lead frame LF constituting the LED package A is for preventing the diffusion of copper in the lead frame strip LM while ensuring the desired sufficient glossiness. In addition, a film thickness ts (see FIG. 5) thicker than that of normal plating must be required.

また、上記高光沢銀メッキは、部分メッキした場合、光沢にムラが生じたり、光沢度が低下する虞れがあるので、リードフレームＬＦの全面に亘って、同じ膜厚でメッキ加工せざるを得ない。 Further, the high-gloss silver plating may cause unevenness in gloss or decrease in gloss when partially plated, so the entire surface of the lead frame LF must be plated with the same film thickness. I don't get it.

このため、図８において明示する如く、光沢度の確保やリードフレーム条材ＬＭの銅の拡散防止等、機能上において高光沢銀メッキＳに膜厚を必要とする、リードフレームＬＦの上面（ＬＥＤチップの搭載面）は必然としても、例えば実装時にハンダ濡れ性を満足するメッキ膜厚が有れば十分なリードフレームＬＦの裏面や、外枠Ｌｆ等のように抑もメッキの必要のない部位にも、リードフレームＬＦの上面と同等の膜厚ｔｓでメッキ加工が為されることで、リードフレームＬＦの製造に際して貴金属を含む銀メッキを多く使用せざるを得ず、もってリードフレームＬＦの製造コスト、延いてはＬＥＤパッケージの製造コストの徒らな高騰を招来する虞れがあった。 For this reason, as clearly shown in FIG. 8, the upper surface of the lead frame LF that requires a film thickness for the high-gloss silver plating S in terms of function, such as ensuring glossiness and preventing copper diffusion of the lead frame strip LM (LED The chip mounting surface is inevitable, but if there is a plating film thickness that satisfies solder wettability at the time of mounting, for example, the back surface of the lead frame LF or a portion that does not need to be plated, such as the outer frame Lf In addition, since the plating process is performed with the film thickness ts equivalent to the upper surface of the lead frame LF, a lot of silver plating containing a noble metal must be used in the production of the lead frame LF, and thus the production of the lead frame LF. There is a risk that the cost and, in turn, the manufacturing cost of the LED package will increase.

本発明の目的は上記実状に鑑みて、製造時における銀メッキの使用量を可及的に抑制す
ることによって、貴金属を含む銀メッキの使用に起因する製造コストの高騰を未然に防止
し得るリードフレームの製造方法を提供することにある。 An object of the present invention is to provide a lead that can prevent an increase in manufacturing cost due to the use of silver plating containing a noble metal by suppressing the amount of silver plating used in manufacturing as much as possible in view of the above situation. It is to provide a method for manufacturing a frame.

上記目的を達成するべく、本願発明に関わるリードフレームの製造方法は、金属条材に外枠とその内側にあるリードフレームのパターンを形成してリードフレーム条材を作成する工程と、前記リードフレーム条材における前記リードフレームの上面のみに部分メッキを施す工程と、前記部分メッキの上面とともに前記リードフレーム条材の全面に高光沢銀メッキを施す工程と、を含んで成ることを特徴としている。 In order to achieve the above object, a lead frame manufacturing method according to the present invention comprises a step of forming a lead frame strip by forming a pattern of an outer frame and a lead frame on the inside of a metal strip, and the lead frame. The method includes a step of performing partial plating only on the upper surface of the lead frame in the strip material, and a step of performing high gloss silver plating on the entire surface of the lead frame strip together with the upper surface of the partial plating.

上述の如き本願発明に関わるリードフレームの製造方法によれば、リードフレームの上面には部分メッキと高光沢銀メッキとが積層されることで、所望する光沢度を確保しながら、リードフレーム条材の銅の拡散防止等の機能上における十分な膜厚が得られる一方、上記リードフレームの上面以外の部位には高光沢銀メッキのみが施されるので、リードフレームの製造時における銀メッキの使用量が抑えられ、もって製造コストの高騰を未然に防止することができる。 According to the lead frame manufacturing method according to the present invention as described above, the lead frame strip material is obtained while the desired glossiness is secured by laminating the partial plating and the high gloss silver plating on the upper surface of the lead frame. A sufficient film thickness in terms of preventing copper diffusion can be obtained. On the other hand, only the high-gloss silver plating is applied to the portions other than the upper surface of the lead frame. The amount can be suppressed, thereby preventing an increase in manufacturing cost.

（ａ）は本発明に係る方法により製造したリードフレームを用いて成るＬＥＤパッケージの外観上面図、（ｂ）は（ａ）中のｂ−ｂ線断面図。(A) is an external appearance top view of the LED package which uses the lead frame manufactured by the method based on this invention, (b) is the bb sectional view taken on the line in (a). （ａ）〜（ｄ）は本発明に係るリードフレームの製造方法を工程順に示したリードフレーム条材(金属条材)の上面図および下面図。(A)-(d) is the top view and bottom view of the lead frame strip (metal strip) which showed the manufacturing method of the lead frame which concerns on this invention in process order. 図２（ｂ）の工程において形成される複数のリードフレームを示すリードフレーム条材の要部上面図。FIG. 3 is a top view of a main part of a lead frame strip showing a plurality of lead frames formed in the step of FIG. （ａ）は図２（ｂ）の工程におけるリードフレームを示す図３中のｘ−ｘ線断面図、（ｂ）は図２（ｃ）の工程におけるリードフレームを示す図３中のｘ−ｘ線断面図、（ｃ）は図２（ｄ）の工程におけるリードフレームを示す図３中のｘ−ｘ線断面図。3A is a cross-sectional view taken along line xx in FIG. 3 showing the lead frame in the step of FIG. 2B, and FIG. 3B is a cross-sectional view in FIG. 3 showing the lead frame in the step of FIG. FIG. 4C is a sectional view taken along line XX of FIG. 3 showing the lead frame in the process of FIG. （ａ）は従来のＬＥＤパッケージを示す外観上面図、（ｂ）は（ａ）中のｂ−ｂ線断面図。(A) is an external appearance top view which shows the conventional LED package, (b) is the bb sectional view taken on the line in (a). （ａ）〜（ｃ）は従来のリードフレームの製造方法を工程順に示したリードフレーム条材(金属条材)の上面図および下面図。(A)-(c) is the top view and bottom view of the lead frame strip (metal strip) which showed the manufacturing method of the conventional lead frame in order of the process. 図６（ｂ）の工程において形成される複数のリードフレームを示すリードフレーム条材の要部上面図。FIG. 7 is a top view of a main part of a lead frame strip showing a plurality of lead frames formed in the step of FIG. （ａ）は図６（ｂ）の工程におけるリードフレームを示す図７中のｘ−ｘ線断面図、（ｂ）は図６（ｃ）の工程におけるリードフレームを示す図７中のｘ−ｘ線断面図。7A is a cross-sectional view taken along line xx in FIG. 7 showing the lead frame in the step of FIG. 6B, and FIG. 7B is a cross-sectional view in FIG. 7 showing the lead frame in the step of FIG. FIG.

以下、本発明に係るリードフレームの製造方法について、実施例を示す図面を参照しつつ詳細に説明する。 Hereinafter, a lead frame manufacturing method according to the present invention will be described in detail with reference to the drawings showing embodiments.

図１は、本発明により製造したリードフレームを用いて成るＬＥＤパッケージ１０を示しており、このＬＥＤパッケージ１０は、リードフレーム２の上面にＬＥＤチップ１１が搭載され、該ＬＥＤチップ１１と上記リードフレーム２（リード部２Ａ、チップ搭載部２Ｂ）とは、ボンディングワイヤ１２，１２を介して互いに接続され、上記ＬＥＤチップ１１の周囲には白色樹脂によってリフレクタ部１３が形成されているとともに、上記ＬＥＤチップ１１は透明樹脂から成る透光部１４によってモールドされている。 FIG. 1 shows an LED package 10 using a lead frame manufactured according to the present invention. The LED package 10 has an LED chip 11 mounted on the upper surface of a lead frame 2, and the LED chip 11 and the lead frame are shown in FIG. 2 (lead part 2A, chip mounting part 2B) are connected to each other via bonding wires 12, 12, and a reflector part 13 is formed around the LED chip 11 with a white resin. 11 is molded by a translucent portion 14 made of a transparent resin.

上述したＬＥＤパッケージ１０を構成するリードフレーム２は、図２（ａ）〜（ｄ）に
示す如き工程によって製造される。 The lead frame 2 constituting the LED package 10 described above is manufactured by processes as shown in FIGS.

先ず、図２（ａ）に示す如く、例えば銅材等の薄板から成る金属条材１Ｍを用意し、次いで、図２（ｂ）に示す如く、上記金属条材１Ｍに対してプレス加工またはエッチング加工により、個々のリードフレーム２におけるパターンを形成、詳しくは、複数のリードフレーム２をマトリクス状に配置したリードフレーム群１Ｕを形成し、リードフレーム条材１Ｌを作成する。 First, as shown in FIG. 2A, a metal strip 1M made of a thin plate such as a copper material is prepared. Next, as shown in FIG. 2B, the metal strip 1M is pressed or etched. By processing, a pattern in each lead frame 2 is formed. Specifically, a lead frame group 1U in which a plurality of lead frames 2 are arranged in a matrix is formed to produce a lead frame strip 1L.

ここで、図３に示す如く、上記リードフレーム条材１Ｌは、リード部２Ａとチップ搭載部２Ｂとから成るリードフレーム２が縦横に配列形成され、隣り合うリードフレーム２同士や、リードフレーム２と外枠１Ｆとは、複数のタイバー１Ｔ、１Ｔ…を介して互いに接
続されている。 Here, as shown in FIG. 3, the lead frame strip 1L has a lead frame 2 composed of a lead portion 2A and a chip mounting portion 2B arranged vertically and horizontally. The outer frame 1F is connected to each other via a plurality of tie bars 1T, 1T.

次いで、図２（ｃ）に示す如く、リードフレーム条材１Ｌのリードフレーム群１Ｕにおける各リードフレーム２の上面、詳しくはリードフレーム２におけるリード部２Ａとチップ搭載部２Ｂとの上面２Ａｔ、２Ｂｔ（図４参照）のみに、例えば１．０μｍの膜厚で部分メッキ３を施す。 Next, as shown in FIG. 2C, the upper surface of each lead frame 2 in the lead frame group 1U of the lead frame strip 1L, more specifically, the upper surfaces 2At and 2Bt of the lead portion 2A and the chip mounting portion 2B of the lead frame 2 ( For example, only the partial plating 3 is applied with a film thickness of 1.0 μm.

ここで、上記部分メッキ３の具体例としては、無光沢銀メッキ、半光沢銀メッキ、あるいは高光沢銀メッキの何れか１つのメッキ加工が実施される。
また、上記部分メッキ３の膜厚は、例示した１．０μｍに限定されるものではなく、仕様等の条件によって適宜に設定し得ることは言うまでもない。 Here, as a specific example of the partial plating 3, any one plating process of matte silver plating, semi-gloss silver plating, or high-gloss silver plating is performed.
Moreover, it cannot be overemphasized that the film thickness of the said partial plating 3 is not limited to illustrated 1.0 micrometer, and can set suitably according to conditions, such as a specification.

上述した如く、リードフレーム２におけるリード部２Ａとチップ搭載部２Ｂとの上面のみに部分メッキ３を施したのち、図２（ｄ）に示す如く、上記部分メッキ３の上面とともに、上記リードフレーム条材１Ｌの全面に亘って、例えば１．０μｍの膜厚で高光沢銀メッキ４を施すことによって完成となる。 As described above, after the partial plating 3 is applied only to the upper surfaces of the lead portion 2A and the chip mounting portion 2B in the lead frame 2, as shown in FIG. The entire surface of the material 1L is completed by applying the high gloss silver plating 4 with a film thickness of, for example, 1.0 μm.

ここで、上記高光沢銀メッキ４は、ＧＡＭ値で１．０〜２．０の光沢度を有しているが、光沢度が１．０以下では反射率が低下してＬＥＤチップ１１の発光を有効利用できず、また光沢度は２．０が限界であることから、１．２〜１．８の光沢度を有していることが更に好ましい。なお、上記無光沢メッキは０〜０．６の光沢度を有し、上記半光沢メッキは０．６〜１．０の光沢度を有している。 Here, the high-gloss silver plating 4 has a GAM value of 1.0 to 2.0, but when the gloss is 1.0 or less, the reflectance decreases and the LED chip 11 emits light. Can not be used effectively, and the glossiness is limited to 2.0, so that it preferably has a glossiness of 1.2 to 1.8. The matte plating has a glossiness of 0 to 0.6, and the semi-glossy plating has a glossiness of 0.6 to 1.0.

因みに、“ＧＡＭ値”とは、GRAPHIC ARTS MANUFACURING 社製の光沢度計を用いた光沢度の指標であり、当業者においては周知であるので詳細な説明は省略する。
また、上記高光沢銀メッキ４の膜厚は、例示した１．０μｍに限定されるものではなく、仕様等の条件によって適宜に設定し得ることは言うまでもない。 Incidentally, the “GAM value” is an index of glossiness using a gloss meter manufactured by GRAPHIC ARTS MANUFACURING, and is well known to those skilled in the art, so detailed description thereof is omitted.
The film thickness of the high-gloss silver plating 4 is not limited to the exemplified 1.0 μm, and it is needless to say that the film thickness can be appropriately set according to conditions such as specifications.

図１に示したＬＥＤパッケージ１０は、図２（ｄ）に示す完成したリードフレーム条材１Ｌを用い、個々のリードフレーム２におけるリフレクタ１３をリードフレーム群１Ｕ毎に一体のブロックとして形成するプリモールド工程と、個々のリードフレーム２にＬＥＤチップ１１を搭載するチップ搭載工程と、ボンディングワイヤ１２を介してＬＥＤチップ１１とリードフレーム２とを接続するワイヤボンディング工程と、ＬＥＤチップ１１を透光部１４でモールドする透光部モールド工程とを経たのち、ダイシング工程において各々のＬＥＤパッケージ１０に個片化することで製品として完成する。 The LED package 10 shown in FIG. 1 uses a completed lead frame strip 1L shown in FIG. 2D, and a pre-mold in which the reflector 13 in each lead frame 2 is formed as an integral block for each lead frame group 1U. A process, a chip mounting process for mounting the LED chip 11 on each lead frame 2, a wire bonding process for connecting the LED chip 11 and the lead frame 2 via the bonding wires 12, and the LED chip 11 through the translucent portion 14. After the light-transmitting part molding step for molding, the LED packages 10 are separated into individual pieces in the dicing step, thereby completing the product.

ここで、図４において明示する如く、リードフレーム条材１Ｌにおけるリードフレーム２（リード部２Ａ、チップ搭載部２Ｂ）の上面２Ａｔ、２Ｂｔには、部分メッキ３と高光沢銀メッキ４とが積層されることによって、所望する光沢度を確保しながら、リードフレーム条材１Ｌにおける銅の拡散を防止するために十分な膜厚ｔ１、すなわち従来のリードフレームＬＦに形成された高光沢銀メッキＳの膜厚ｔｓ（図４参照）と同等の膜厚を有するメッキ層が形成されることとなる。 Here, as clearly shown in FIG. 4, partial plating 3 and high-gloss silver plating 4 are laminated on the upper surfaces 2At and 2Bt of the lead frame 2 (lead portion 2A, chip mounting portion 2B) in the lead frame strip 1L. Thus, a film thickness t1 sufficient to prevent diffusion of copper in the lead frame strip 1L, that is, a film of the high gloss silver plating S formed on the conventional lead frame LF while ensuring a desired gloss level. A plating layer having a film thickness equivalent to the thickness ts (see FIG. 4) is formed.

一方、上記リードフレーム２の上面２Ａｔ、２Ｂｔ以外の部位、詳しくは、実装時にハンダ濡れ性を満足するメッキ膜厚が有れば十分なリードフレーム２の裏面や、外枠１Ｆ等のように抑もメッキの必要のない部位には、高光沢銀メッキ４のみが施されることとなり、その膜厚ｔ２は上述したリードフレーム２の上面２Ａｔ、２Ｂｔにおけるメッキ層の膜
厚ｔ１よりも薄いものとなることは勿論である。 On the other hand, the portions other than the top surfaces 2At and 2Bt of the lead frame 2, more specifically, if the plating film thickness satisfying the solder wettability at the time of mounting is sufficient, the back surface of the lead frame 2 or the outer frame 1F is suppressed. In addition, only the high-gloss silver plating 4 is applied to a portion that does not require plating, and the film thickness t2 is thinner than the film thickness t1 of the plating layer on the top surfaces 2At and 2Bt of the lead frame 2 described above. Of course.

このように、図１〜図４に示した実施例によれば、リードフレーム２（リード部２Ａ、チップ搭載部２Ｂ）の上面２Ａｔ、２Ｂｔには、部分メッキ３と高光沢銀メッキ４とが積層されることによって、所望する光沢度を確保しながら、リードフレーム条材１Ｌの銅の拡散防止等の機能上における十分な膜厚ｔ１のメッキ層が得られる一方、上記リードフレーム２の上面２Ａｔ、２Ｂｔ以外の部位には、高光沢銀メッキ４のみが施されることによって、上記膜厚ｔ１よりも薄い膜厚ｔ２のメッキ層が形成されることとなる。 As described above, according to the embodiment shown in FIGS. 1 to 4, the upper surface 2At and 2Bt of the lead frame 2 (lead portion 2A, chip mounting portion 2B) are provided with the partial plating 3 and the high gloss silver plating 4. By laminating, a plating layer having a sufficient film thickness t1 in terms of functions such as prevention of copper diffusion of the lead frame strip 1L can be obtained while ensuring a desired glossiness, while the upper surface 2At of the lead frame 2 is obtained. By applying only the high-gloss silver plating 4 to portions other than 2Bt, a plating layer having a film thickness t2 smaller than the film thickness t1 is formed.

かくして、図５〜図８に示した如く、リードフレーム条材ＬＭの全面に対して、高光沢銀メッキＳを厚い膜厚ｔｓで形成していた従来の製造方法に比べて、本願発明に係る製造方法によれば、リードフレームの製造時における銀メッキの使用量が抑えられ、もって製造コストの高騰を未然に防止することが可能となる。 Thus, as shown in FIGS. 5 to 8, the present invention relates to the present invention as compared with the conventional manufacturing method in which the high-gloss silver plating S is formed on the entire surface of the lead frame strip LM with the thick film thickness ts. According to the manufacturing method, the amount of silver plating used at the time of manufacturing the lead frame can be suppressed, so that it is possible to prevent an increase in manufacturing cost.

なお、本実施例においては、ＱＦＮタイプのＬＥＤパッケージに供されるリードフレームの製造方法を対象としたが、上記ＱＦＮタイプ以外のＬＥＤパッケージに供されるリードフレームの製造方法においても、本願発明が有効に適用し得る技術であることは言うまでもない。 In this embodiment, the lead frame manufacturing method used for the QFN type LED package is targeted. However, the present invention also applies to the manufacturing method of the lead frame used for the LED package other than the QFN type. Needless to say, this technique can be applied effectively.

１Ｍ…金属条材、１Ｌ…リードフレーム条材、１Ｕ…リードフレーム群、１Ｆ…外枠、１Ｔ…タイバー、２…リードフレーム、２Ａ…リード部、２Ａｔ…上面、２Ｂ…チップ搭載部、２Ｂｔ…上面、３…部分メッキ層、４…高光沢銀メッキ層、１０…ＬＥＤパッケージ、１１…ＬＥＤチップ、１２…ボンディングワイヤ、１３…リフレクタ部、１４…透光部 1M ... Metal strip, 1L ... Lead frame strip, 1U ... Lead frame group, 1F ... Outer frame, 1T ... Tie bar, 2 ... Lead frame, 2A ... Lead part, 2At ... Upper surface, 2B ... Chip mounting part, 2Bt ... Upper surface, 3 ... Partially plated layer, 4 ... High gloss silver plated layer, 10 ... LED package, 11 ... LED chip, 12 ... Bonding wire, 13 ... Reflector part, 14 ... Translucent part

Claims (3)

金属条材に外枠とその内側にあるリードフレームのパターンを形成してリードフレーム条材を作成する工程と、
前記リードフレーム条材における前記リードフレームの上面のみに部分メッキを施す工程と、
前記部分メッキの上面とともに前記リードフレーム条材の全面に高光沢銀メッキを施す工程と、
を含んで成ることを特徴とするリードフレームの製造方法。 Forming a lead frame strip by forming a pattern of an outer frame and a lead frame inside thereof on a metal strip; and
Applying partial plating only to the top surface of the lead frame in the lead frame strip;
Applying high gloss silver plating to the entire surface of the lead frame strip together with the upper surface of the partial plating;
A method for manufacturing a lead frame, comprising: 前記リードフレームの上面に施される部分メッキが、無光沢銀メッキ、半光沢銀メッキ、高光沢銀メッキのうち、何れか１つであることを特徴とする請求項１記載のリードフレームの製造方法。 2. The lead frame manufacturing method according to claim 1, wherein the partial plating applied to the upper surface of the lead frame is any one of matte silver plating, semi-gloss silver plating, and high-gloss silver plating. Method. 前記高光沢銀メッキが、１．０〜２．０の光沢度（ＧＡＭ値）であることを特徴とする請求項１記載のリードフレームの製造方法。 The lead frame manufacturing method according to claim 1, wherein the high gloss silver plating has a glossiness (GAM value) of 1.0 to 2.0.
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