JPH05251392A - Reactive ion etching device - Google Patents

Abstract

PURPOSE:To prevent the reaction between residual aluminum and oxygen on the way in a reactant type ion etching process for a semiconductor substrate. CONSTITUTION:A semiconductor substrate 4 which is already etched is not exposed to air and introduced to a test device 5 by way of a carrier 6. When the presence of residual aluminum is not recognized, the semiconductor substrate 4 is taken out into the atmospheric air by means of an unload-lock chamber 3. However, the presence of residual aluminum is recognized, the semiconductor substrate 4 is introduced to an etching chamber 1 by way of a load-lock chamber 2 where etching is carried out once again.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus,
In particular, the present invention relates to a semiconductor substrate etching apparatus using reactive ions.

[0002]

2. Description of the Related Art Conventionally, in a reactive ion etching apparatus of this type, as shown in FIG. 2, a semiconductor substrate 4 which has been etched by a reaction gas excited by a high frequency.
Is set in an inspection device to inspect the progress of etching. Here, the system was configured so that the semiconductor substrate 4 was exposed to the atmosphere before being set in the inspection device 5. In this case, if there is aluminum left on the surface of the semiconductor substrate without being etched, the aluminum reacts with oxygen in the atmosphere to cause aluminum oxide (A
l ₂ O ₃₎ is generated again, even if the etching can not remove the aluminum oxide (Al ₂ O _3).

[0003]

The problem to be solved is that residual aluminum reacts with oxygen in the atmosphere to form aluminum oxide (Al ₂ O ₃ ).

[0004]

The present invention is characterized in that a semiconductor substrate after etching is set in an inspection device without exposing it to the atmosphere.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a schematic view showing an embodiment of the reactive ion etching apparatus according to the present invention. In FIG. 1, 1 is an etching chamber, 2 is a load lock chamber, 3 is an unload lock chamber, 4 is a semiconductor substrate, 5 is an inspection device, and 6 is a transfer mechanism. The inside of the etching chamber 1 is maintained in a high vacuum, and by applying a high frequency voltage, the introduced reaction gas is excited to generate plasma and aluminum on the surface of the semiconductor substrate 4 is etched.

[0006] The semiconductor substrate 4 before etching is placed in the load lock chamber 2, and after the load lock chamber 2 becomes a high vacuum, the semiconductor substrate 4 is transferred into the etching chamber 1. Semiconductor substrate 4 after etching
Enters the inspection device 5 kept in a high vacuum and inspects for the presence of aluminum remaining without being etched. Semiconductor substrate 4 having no remaining aluminum etched
Enters the unload lock chamber 3. On the other hand, the semiconductor substrate 4 in which the aluminum remaining without being etched exists through the transfer mechanism 6 kept in high vacuum, enters the load lock chamber 2 kept in high vacuum, and is transferred to the etching chamber 1 again. And is etched.

[0007]

As described above, according to the present invention, since the semiconductor substrate after etching can be inspected in a vacuum before being exposed to the atmosphere, even if there is aluminum left unetched on the surface of the semiconductor substrate. However, there is an advantage that residual aluminum can be etched again without reacting with oxygen in the atmosphere to generate aluminum oxide (Al ₂ O ₃ ).

[Brief description of drawings]

FIG. 1 is a schematic view showing an embodiment of a reactive ion etching apparatus according to the present invention.

FIG. 2 is a schematic view showing an example of a reactive ion etching apparatus according to the prior art.

[Explanation of symbols]

 1 Etching Chamber 2 Load Lock Chamber 3 Unload Lock Chamber 4 Semiconductor Substrate 5 Inspection Device 6 Transfer Mechanism

Claims (3)

[Claims] 1. An etching chamber for performing reactive ion etching on a semiconductor substrate, a transport mechanism for transporting the semiconductor substrate in a vacuum after and after the embodiment of the etching, and a transport mechanism connected to the transport mechanism. A reactive ion etching apparatus which is provided with an inspection device for inspecting the progress of etching of the semiconductor substrate. 2. The inspection apparatus is configured to inspect the semiconductor substrate transported in a vacuum by the transport mechanism after completion of etching of the semiconductor substrate in the etching chamber. Reactive ion etching equipment. 3. The transport mechanism is configured to guide the semiconductor substrate to the etching chamber through a vacuum again when the inspection shows that residual aluminum is present in the etching.
The reactive ion etching apparatus described.