JPH0524662B2 - - Google Patents
Info
- Publication number
- JPH0524662B2 JPH0524662B2 JP57030003A JP3000382A JPH0524662B2 JP H0524662 B2 JPH0524662 B2 JP H0524662B2 JP 57030003 A JP57030003 A JP 57030003A JP 3000382 A JP3000382 A JP 3000382A JP H0524662 B2 JPH0524662 B2 JP H0524662B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- layer
- semiconductor device
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 51
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 20
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 239000003574 free electron Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007704 transition Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3000382A JPS58147166A (ja) | 1982-02-26 | 1982-02-26 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3000382A JPS58147166A (ja) | 1982-02-26 | 1982-02-26 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147166A JPS58147166A (ja) | 1983-09-01 |
| JPH0524662B2 true JPH0524662B2 (de) | 1993-04-08 |
Family
ID=12291719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3000382A Granted JPS58147166A (ja) | 1982-02-26 | 1982-02-26 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147166A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4745447A (en) * | 1985-06-14 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Gallium arsenide on gallium indium arsenide Schottky barrier device |
| DE69117866T2 (de) * | 1990-10-26 | 1996-10-10 | Nippon Telegraph & Telephone | Heteroübergangsfeldeffekttransistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132074A (en) * | 1979-04-02 | 1980-10-14 | Max Planck Gesellschaft | Hetero semiconductor and method of using same |
| JPS5713773A (en) * | 1980-06-27 | 1982-01-23 | Fujitsu Ltd | Semiconductor device |
-
1982
- 1982-02-26 JP JP3000382A patent/JPS58147166A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132074A (en) * | 1979-04-02 | 1980-10-14 | Max Planck Gesellschaft | Hetero semiconductor and method of using same |
| JPS5713773A (en) * | 1980-06-27 | 1982-01-23 | Fujitsu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58147166A (ja) | 1983-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH05110086A (ja) | トンネルトランジスタ | |
| JPH0554270B2 (de) | ||
| JPS6331173A (ja) | 半導体装置 | |
| JPH0258773B2 (de) | ||
| JPH01186683A (ja) | 半導体装置 | |
| JPH0312769B2 (de) | ||
| JPH0524662B2 (de) | ||
| JPS6312392B2 (de) | ||
| JPH0354466B2 (de) | ||
| JPS61156773A (ja) | ヘテロ接合半導体デバイス | |
| JPS61161015A (ja) | 複合半導体スイツチング装置 | |
| JP2553673B2 (ja) | 電界効果トランジスタ | |
| JPS6196770A (ja) | 半導体装置 | |
| KR960015325B1 (ko) | 쌍극자 전위 장벽을 갖는 전계효과 트랜지스터 | |
| JP3057678B2 (ja) | 電界効果トランジスタ | |
| JPS62209866A (ja) | 半導体装置 | |
| JPH02135742A (ja) | ヘテロ接合型電界効果トランジスタ | |
| JP2867420B2 (ja) | 化合物半導体装置 | |
| JP3280558B2 (ja) | 半導体装置 | |
| JP2876749B2 (ja) | 半導体装置 | |
| JPS6159676B2 (de) | ||
| JPH01304785A (ja) | 半導体集積回路 | |
| JPS6159877A (ja) | 半導体集積回路 | |
| JPS6245183A (ja) | 電界効果トランジスタ | |
| JPH0219623B2 (de) |