JPH0524662B2 - - Google Patents

Info

Publication number
JPH0524662B2
JPH0524662B2 JP57030003A JP3000382A JPH0524662B2 JP H0524662 B2 JPH0524662 B2 JP H0524662B2 JP 57030003 A JP57030003 A JP 57030003A JP 3000382 A JP3000382 A JP 3000382A JP H0524662 B2 JPH0524662 B2 JP H0524662B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
layer
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57030003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147166A (ja
Inventor
Kazukyo Tsunenobu
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3000382A priority Critical patent/JPS58147166A/ja
Publication of JPS58147166A publication Critical patent/JPS58147166A/ja
Publication of JPH0524662B2 publication Critical patent/JPH0524662B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3000382A 1982-02-26 1982-02-26 半導体装置 Granted JPS58147166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3000382A JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3000382A JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS58147166A JPS58147166A (ja) 1983-09-01
JPH0524662B2 true JPH0524662B2 (de) 1993-04-08

Family

ID=12291719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3000382A Granted JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS58147166A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745447A (en) * 1985-06-14 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Gallium arsenide on gallium indium arsenide Schottky barrier device
DE69117866T2 (de) * 1990-10-26 1996-10-10 Nippon Telegraph & Telephone Heteroübergangsfeldeffekttransistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5713773A (en) * 1980-06-27 1982-01-23 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5713773A (en) * 1980-06-27 1982-01-23 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS58147166A (ja) 1983-09-01

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