JPH05243234A - Tab type semiconductor device and manufacturing apparatus thereof - Google Patents
Tab type semiconductor device and manufacturing apparatus thereofInfo
- Publication number
- JPH05243234A JPH05243234A JP4043247A JP4324792A JPH05243234A JP H05243234 A JPH05243234 A JP H05243234A JP 4043247 A JP4043247 A JP 4043247A JP 4324792 A JP4324792 A JP 4324792A JP H05243234 A JPH05243234 A JP H05243234A
- Authority
- JP
- Japan
- Prior art keywords
- bump electrode
- capillary
- semiconductor device
- tab
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＴＡＢ式半導体装置及び
その製造装置に関し、詳しくは半導体ペレット上にボー
ルボンディングにより形成したバンプ電極の形状及びボ
ールボンディング用キャピラリに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TAB type semiconductor device and an apparatus for manufacturing the same, and more particularly to a shape of a bump electrode formed by ball bonding on a semiconductor pellet and a ball bonding capillary.
【０００２】[0002]
【従来の技術】ＴＡＢ式半導体装置は、例えばフレキシ
ブルなフィルム状プリント基板等に組み付けられるカメ
ラ用ＩＣ等に用いられ、その一例を図５及び図６を参照
して次に示すと、（１）は半導体ペレット（以下、ペレ
ットと称す。）、（２）は枠状フィルム、（３）は金属
箔リードである。そして、金属箔リード（３）を枠状フ
ィルム（２）の内側から外側に向って放射状に配置する
と共に、その中間部分を枠状フィルム（２）に接着し、
且つ、ペレット（１）の表面外周縁に形成したバンプ電
極（４）…とインナーリード（３ａ）とを熱圧着してボ
ンディングすることによりペレット（１）を枠状フィル
ム（２）の内側に支持する。2. Description of the Related Art A TAB type semiconductor device is used, for example, in a camera IC or the like mounted on a flexible film-like printed circuit board or the like. One example is shown in FIG. 5 and FIG. Is a semiconductor pellet (hereinafter referred to as a pellet), (2) is a frame film, and (3) is a metal foil lead. Then, the metal foil leads (3) are radially arranged from the inner side to the outer side of the frame-shaped film (2), and an intermediate portion thereof is adhered to the frame-shaped film (2),
Further, the pellet electrodes (4) formed on the outer peripheral edge of the surface of the pellet (1) and the inner leads (3a) are bonded by thermocompression bonding to support the pellet (1) inside the frame-shaped film (2). To do.
【０００３】上記バンプ電極（４）は、従来、金メッキ
により形成していたが、ＴＡＢ式半導体装置（５）の近
年における多機能化及び小型化の要望に応じてリード
（３）の幅、ピッチは益々小さく、且つ、バンプ電極
（４）は益々小面積化する傾向にある。そうすると、バ
ンプ電極（４）をメッキにて形成した場合、面積が小さ
くなると共に、自ずと高さも低くなる。そのため、低い
バンプ電極（４）上にリード（３）を熱圧着すると、リ
ード（３）の若干の変形でリード（３）とペレット
（１）の間で短絡が生じたり、耐圧劣化を招くことがあ
る。Conventionally, the bump electrodes (4) have been formed by gold plating, but the width and pitch of the leads (3) have been increased according to the recent demand for multifunctionalization and miniaturization of the TAB semiconductor device (5). Is smaller and the bump electrode (4) tends to be smaller in area. Then, when the bump electrode (4) is formed by plating, the area becomes smaller and the height naturally becomes smaller. Therefore, when the lead (3) is thermocompression-bonded onto the low bump electrode (4), a slight deformation of the lead (3) may cause a short circuit between the lead (3) and the pellet (1) or may cause a breakdown voltage deterioration. There is.
【０００４】そこで、最近は、バンプ電極（４）を小面
積でも十分に高さを確保出来るボールボンディングによ
り形成してきており、その一例を図２及び図３を参照し
て次に示す。まず図２はワイヤボンディング用キャピラ
リ（６）の正断面図を示し、その挿通孔（６ａ）に直径
が２０〜２５μｍ程度の金線等の金属細線（７）を挿通
すると共に、挿通孔（６ａ）の下端面から突出した金属
細線（７）の先端部に放電トーチ等で溶融金属塊である
ボール（７ａ）を形成している。そして、図３（ａ）に
示すように、キャピラリ（６）の先端でボール（７ａ）
をペレット（１）の電極引出し領域（８）に押し付け、
且つ、超音波振動を加えることで電気的接続してボンデ
ィングする。次に、ボンディング終了後、キャピラリ
（６）を少し上昇させて左右に振動させ、ボール（７
ａ）と金属細線（７）の境界部分を切断し易くしておい
てから、図３（ｂ）に示すように、キャピラリ（６）を
横に移動させる。そうすると、ボール（７ａ）と金属細
線（７）の境界部分が切断され、少し押し潰された形で
ボンディングされたボール（７ａ）により直径が９５μ
ｍ程度のバンプ電極（４）が形成される。上記ボール
（７ａ）によるバンプ電極（４）は電極引出し領域
（８）が小面積であっても、十分な高さで形成されるの
で半導体装置（５）の多機能化や小型化に対応出来る。Therefore, recently, the bump electrode (4) has been formed by ball bonding capable of ensuring a sufficient height even in a small area. An example thereof is shown below with reference to FIGS. 2 and 3. First, FIG. 2 shows a front cross-sectional view of the wire bonding capillary (6). A metal thin wire (7) such as a gold wire having a diameter of about 20 to 25 μm is inserted into the insertion hole (6a) and the insertion hole (6a). ), A ball (7a) which is a molten metal block is formed by a discharge torch or the like at the tip of the thin metal wire (7) protruding from the lower end surface. Then, as shown in FIG. 3A, the ball (7a) is attached to the tip of the capillary (6).
To the electrode extraction area (8) of the pellet (1),
In addition, ultrasonic vibration is applied for electrical connection and bonding. Next, after the bonding is completed, the capillary (6) is slightly raised to vibrate left and right, and the ball (7
After making it easy to cut the boundary portion between a) and the thin metal wire (7), the capillary (6) is moved laterally as shown in FIG. 3 (b). Then, the boundary portion between the ball (7a) and the thin metal wire (7) is cut, and the ball (7a) bonded in a slightly crushed form has a diameter of 95 μm.
A bump electrode (4) of about m is formed. The bump electrode (4) formed by the ball (7a) is formed with a sufficient height even if the electrode lead-out region (8) has a small area, so that the semiconductor device (5) can be made multifunctional and miniaturized. ..
【０００５】[0005]
【発明が解決しようとする課題】解決しようとする課題
は、図３（ｂ）に示すように、ボンディング終了後の金
属細線切断時、バンプ電極（４）の頂部に切断バリ状の
立ち上がり部（７ｂ）が残留し、その結果、図４に示す
ように、バンプ電極（４）にインナーリード（３ａ）を
熱圧着する際に、若干、突出している立ち上がり部（７
ｂ）を横に倒し、又は押し潰すようにして主にその上面
にボンディングされるため、ボンディング面積が小さく
なってボンディング強度が低下し、製品の信頼性が低下
する点である。As shown in FIG. 3 (b), the problem to be solved is to form a cutting burr-like rising portion () on the top of the bump electrode (4) at the time of cutting the thin metal wire after the bonding is completed. 7b) remains, and as a result, as shown in FIG. 4, when the inner lead (3a) is thermocompression-bonded to the bump electrode (4), it slightly protrudes from the rising portion (7).
Since b) is mainly laid down or crushed to be bonded on the upper surface thereof, the bonding area is reduced, the bonding strength is reduced, and the reliability of the product is reduced.
【０００６】[0006]
【課題を解決するための手段】本発明は、ＴＡＢ式半導
体装置の製造装置として、金属細線を挿通してその下端
から突出した金属細線の先端部に金属ボールを形成し、
上記金属ボールをＴＡＢテープの半導体ペレット上に熱
圧着して金属細線を切断分離してバンプ電極を形成する
キャピラリを具備し、その下端面に開口した金属細線挿
通孔の全周囲に亘って、バンプ電極に環状凹部を形成す
る突起を設けたことを特徴とし、又、The present invention is an apparatus for manufacturing a TAB type semiconductor device, in which a metal ball is formed by inserting a metal wire into the tip of the metal wire protruding from the lower end thereof.
The metal ball is thermocompression-bonded onto the semiconductor pellet of the TAB tape, and the capillary is provided by cutting and separating the metal fine wire to form a bump electrode, and the bump is formed over the entire circumference of the metal fine wire insertion hole opened at the lower end surface thereof. Characterized in that the electrode is provided with a protrusion forming an annular recess,
【０００７】ＴＡＢ式半導体装置として、金属ボールの
熱圧着によって半導体ペレット上に形成されたバンプ電
極の上部中央の立ち上がり部全周辺部に環状凹部を形成
し、そのバンプ電極にＴＡＢテープのインナーリード
を、上記バンプ電極の立ち上がり部を圧潰してその圧潰
部分を上記凹部に収容した状態で電気的に接続したこと
を特徴とする。As a TAB type semiconductor device, an annular recess is formed in the entire peripheral portion of the rising center of the bump electrode formed on the semiconductor pellet by thermocompression bonding of metal balls, and the inner lead of the TAB tape is formed on the bump electrode. It is characterized in that the rising portion of the bump electrode is crushed and the crushed portion is electrically connected in a state of being housed in the recess.
【０００８】[0008]
【作用】上記技術的手段によれば、金属細線のボールボ
ンディングによってペレット上にバンプ電極を形成する
と共に、金属細線の切断によって残留した立ち上がり部
の全周辺部にキャピラリ下端の突起にて環状凹部を設
け、その状態でバンプ電極と枠状絶縁性フィルムの枠内
に延在させたインナーリードとを熱圧着して電気的接続
すると、圧着時に金属細線立ち上がり部が圧潰されてそ
の周辺部の凹部に収容され、インナーリードが略バンプ
電極上面の全面に亘って接触してボンディングされる。According to the above technical means, the bump electrode is formed on the pellet by ball bonding of the fine metal wire, and the annular recess is formed by the projection at the lower end of the capillary at the entire peripheral portion of the rising portion left by the cutting of the fine metal wire. When the bump electrodes and the inner leads extended in the frame of the frame-shaped insulating film are provided and electrically connected by thermocompression bonding, the rising part of the metal thin wire is crushed during the pressure bonding to form a recess in the peripheral part. It is accommodated and the inner leads are contacted and bonded over substantially the entire upper surface of the bump electrode.
【０００９】[0009]
【実施例】本発明に係るＴＡＢ式半導体装置及びその製
造装置の実施例を図１（ａ）（ｂ）を参照して以下に説
明する。まず図１（ａ）において（９）は本発明に係る
ＴＡＢ式半導体装置のバンプ電極、（１０）は本発明に
係るＴＡＢ式半導体装置の製造装置としてのキャピラリ
である。上記バンプ電極（９）はペレットの電極引出し
領域（８）上にボールボンディングによって形成され、
従来と同様、中央部に金属細線（７）の立ち上がり部
（７ｂ）が残留すると共に、その全周辺部にインナーリ
ードボンディング時に立ち上がり部（７ｂ）を収容する
環状凹部（９ａ）が形成されている。キャピラリ（１
０）は金属細線（７）の挿通孔（１０ａ）を有すると共
に、挿通孔（１０ａ）の下端開口の全周囲に亘ってバン
プ電極（９）の凹部形成用突起（１０ｂ）を有する。Embodiments of the TAB type semiconductor device and its manufacturing apparatus according to the present invention will be described below with reference to FIGS. 1 (a) and 1 (b). First, in FIG. 1A, (9) is a bump electrode of a TAB type semiconductor device according to the present invention, and (10) is a capillary as an apparatus for manufacturing a TAB type semiconductor device according to the present invention. The bump electrode (9) is formed on the electrode lead-out region (8) of the pellet by ball bonding,
As in the conventional case, the rising portion (7b) of the thin metal wire (7) remains in the central portion, and an annular recess (9a) for accommodating the rising portion (7b) at the time of inner lead bonding is formed in the entire peripheral portion thereof. .. Capillary (1
Reference numeral 0) has an insertion hole (10a) for the thin metal wire (7) and also has a projection (10b) for forming a recess of the bump electrode (9) over the entire periphery of the lower end opening of the insertion hole (10a).
【００１０】上記構成に基づき本発明の動作を次に説明
する。まず従来と同様、キャピラリ（１０）の挿通孔
（１０ａ）に金線等の金属細線（７）を挿通してその下
端面から突出した金属細線（７）の先端部にボール（７
ａ）を形成した後、図３（ａ）に示すと同様に、キャピ
ラリ（１０）の先端でボール（７ａ）をペレット（１）
の電極引出し領域（８）に押し付け、且つ、超音波振動
を加えることでボンディングする。この時、キャピラリ
（１０）の先端でボール（７ａ）を電極引出し領域
（８）に押し付ける際、ボール（７ａ）を押し潰してバ
ンプ電極（９）が形成されると共に、突起（１０ｂ）が
バンプ電極（９）上の金属細線立ち上がり部（７ｂ）の
全周囲を押圧・成形して凹部（９ａ）が形成される。次
に、ボンディング終了後、キャピラリ（１０）を少し上
昇させて左右に振動させ、ボール（７ａ）と金属細線
（７）の境界部分を切断し易くしておいてから、キャピ
ラリ（１０）を横に移動させる。そうすると、ボール
（７ａ）と金属細線（７）の境界部分が切断され、少し
押し潰された形でボンディングされたボール（７ａ）に
より独立のバンプ電極（９）が形成される。The operation of the present invention based on the above configuration will be described below. First, as in the conventional case, the metal thin wire (7) such as a gold wire is inserted into the insertion hole (10a) of the capillary (10), and the ball (7) is attached to the tip of the metal thin wire (7) protruding from the lower end surface thereof.
After forming a), the ball (7a) is pelletized (1) at the tip of the capillary (10) in the same manner as shown in FIG. 3 (a).
Bonding is performed by pressing it against the electrode extraction region (8) and applying ultrasonic vibration. At this time, when the ball (7a) is pressed against the electrode lead-out region (8) by the tip of the capillary (10), the ball (7a) is crushed to form the bump electrode (9) and the protrusion (10b) is bumped. The recessed portion (9a) is formed by pressing and molding the entire periphery of the metal thin wire rising portion (7b) on the electrode (9). Next, after the bonding is completed, the capillary (10) is slightly lifted and vibrated to the left and right to make it easier to cut the boundary portion between the ball (7a) and the thin metal wire (7), and then the capillary (10) is laterally moved. Move to. Then, the boundary portion between the ball (7a) and the thin metal wire (7) is cut, and the independent bump electrode (9) is formed by the ball (7a) bonded in a slightly crushed form.
【００１１】次に、図１（ｂ）に示すように、バンプ電
極（９）上にインナーリード（３ａ）を熱圧着すると、
若干、突出している立ち上がり部（７ｂ）が圧潰されて
左右に押し広がると共に、押し広がった容積分が周囲の
凹部（９ａ）内に入り込んでそこに収容される。そのた
め、立ち上がり部（７ｂ）の上面だけでなく凹部外周囲
のバンプ電極（９）の上面にもインナーリード（３ａ）
が接触してバンプ電極（９）の略全面に亘って平坦にボ
ンディングされ、ボンディング面積が大きくなる。Next, as shown in FIG. 1 (b), the inner leads (3a) are thermocompression bonded onto the bump electrodes (9),
The protruding rising portion (7b) is slightly crushed and spreads to the left and right, and the expanded spread portion enters the surrounding recessed portion (9a) and is accommodated therein. Therefore, the inner leads (3a) are formed not only on the upper surface of the rising portion (7b) but also on the upper surface of the bump electrode (9) around the outside of the recess.
Contact each other and are flatly bonded over substantially the entire surface of the bump electrode (9), and the bonding area is increased.
【００１２】[0012]
【発明の効果】本発明によれば、金属細線のボールボン
ディングによってバンプ電極を形成する際、バンプ電極
上における金属細線立ち上がり部の全周辺部に凹部を形
成してインナーリードボンディングしたから、ボンディ
ング時に上記立ち上がり部が凹部内に収容されてインナ
ーリードがバンプ電極上面の略全面に亘って接触してボ
ンディングされ、ボンディング面積が大きくなってボン
ディング強度が向上し、製品の信頼性が向上する。According to the present invention, when a bump electrode is formed by ball bonding of a fine metal wire, a recess is formed in the entire peripheral portion of the rising portion of the fine metal wire on the bump electrode, and inner lead bonding is performed. The rising portion is housed in the recess, and the inner leads are contacted and bonded over substantially the entire upper surface of the bump electrode, the bonding area is increased, the bonding strength is improved, and the reliability of the product is improved.
【図１】（ａ）は本発明に係るＴＡＢ式半導体装置及び
その製造装置を示すバンプ電極とキャピラリの正断面図
である。（ｂ）は本発明の動作説明図である。FIG. 1A is a front sectional view of a bump electrode and a capillary showing a TAB type semiconductor device and a manufacturing apparatus thereof according to the present invention. (B) is an operation explanatory view of the present invention.
【図２】従来のＴＡＢ式半導体装置の製造装置を示すキ
ャピラリの正断面図である。FIG. 2 is a front sectional view of a capillary showing a conventional TAB type semiconductor device manufacturing apparatus.
【図３】（ａ）は従来のＴＡＢ式半導体装置の製造装置
によるバンプ電極形成動作を示すキャピラリと金属ボー
ルの正断面図である。（ｂ）は従来のキャピラリによっ
て形成したバンプ電極の正面図である。FIG. 3A is a front sectional view of a capillary and a metal ball showing a bump electrode forming operation by a conventional TAB type semiconductor device manufacturing apparatus. (B) is a front view of a bump electrode formed by a conventional capillary.
【図４】本発明の課題の説明図である。FIG. 4 is an explanatory diagram of a problem of the present invention.
【図５】ＴＡＢ式半導体装置の一例を示す側断面図であ
る。FIG. 5 is a side sectional view showing an example of a TAB semiconductor device.
【図６】ＴＡＢ式半導体装置の一例を示す平面図であ
る。FIG. 6 is a plan view showing an example of a TAB semiconductor device.
７ 金属細線 ７ｂ 立ち上がり部 ９ バンプ電極 ９ａ 凹部 １０ キャピラリ １０ａ 突起 7 Metal Fine Wire 7b Rising Part 9 Bump Electrode 9a Recess 10 Capillary 10a Protrusion
Claims (2)
して形成したバンプ電極の上部中央の立ち上がり部全周
辺部に環状凹部を形成し、そのバンプ電極にＴＡＢテー
プのインナーリードを、上記バンプ電極の立ち上がり部
を圧潰してその圧潰部分を上記凹部に収容した状態で電
気的に接続したことを特徴とするＴＡＢ式半導体装置。1. A bump is formed by thermocompression bonding a metal ball on a semiconductor pellet, and an annular recess is formed at the entire periphery of the rising portion at the center of the upper part. The bump electrode is provided with an inner lead of a TAB tape. The TAB semiconductor device is characterized in that the rising portion of the TAB is crushed and the crushed portion is electrically connected in a state of being housed in the recess.
端から突出した金属細線の先端部に金属ボールを形成
し、上記金属ボールを半導体ペレット上に熱圧着して金
属細線を切断分離してＴＡＢテープのインナーリードが
接続されるバンプ電極を形成するキャピラリを具備し、
その下端面に開口した金属細線挿通孔の全周囲に亘っ
て、バンプ電極に環状凹部を形成する突起を設けたこと
を特徴とするＴＡＢ式半導体装置の製造装置。2. A thin metal wire is inserted into a capillary, a metal ball is formed at the tip of the thin metal wire protruding from the lower end thereof, and the metal ball is thermocompression-bonded onto a semiconductor pellet to cut and separate the thin metal wire. It is equipped with a capillary that forms bump electrodes to which the inner leads of the tape are connected,
An apparatus for manufacturing a TAB type semiconductor device, characterized in that a bump electrode is provided with a projection that forms an annular recess over the entire circumference of a metal wire insertion hole that is open at the lower end surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4043247A JPH05243234A (en) | 1992-02-28 | 1992-02-28 | Tab type semiconductor device and manufacturing apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4043247A JPH05243234A (en) | 1992-02-28 | 1992-02-28 | Tab type semiconductor device and manufacturing apparatus thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243234A true JPH05243234A (en) | 1993-09-21 |
Family
ID=12658559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4043247A Pending JPH05243234A (en) | 1992-02-28 | 1992-02-28 | Tab type semiconductor device and manufacturing apparatus thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05243234A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6079610A (en) * | 1996-10-07 | 2000-06-27 | Denso Corporation | Wire bonding method |
| US6601752B2 (en) | 2000-03-13 | 2003-08-05 | Denso Corporation | Electronic part mounting method |
-
1992
- 1992-02-28 JP JP4043247A patent/JPH05243234A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6079610A (en) * | 1996-10-07 | 2000-06-27 | Denso Corporation | Wire bonding method |
| US6601752B2 (en) | 2000-03-13 | 2003-08-05 | Denso Corporation | Electronic part mounting method |
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