JPH05226546A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPH05226546A JPH05226546A JP4023730A JP2373092A JPH05226546A JP H05226546 A JPH05226546 A JP H05226546A JP 4023730 A JP4023730 A JP 4023730A JP 2373092 A JP2373092 A JP 2373092A JP H05226546 A JPH05226546 A JP H05226546A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- reference hole
- lead
- die
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置およびその製
法に関する。さらに詳しくはリードフレームのタイバー
など各リードを連結している連結バーの切断を精度よく
行う半導体装置およびその製法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and its manufacturing method. More specifically, the present invention relates to a semiconductor device that accurately cuts a connecting bar such as a tie bar of a lead frame that connects each lead, and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】半導体装置は半導体チップをダイボンデ
ィングするダイパッドおよびその周囲に配設されたリー
ドを、タイバーや連結リードなどの連結バーで一体に形
成したリードフレームを使用し、半導体チップをプリフ
ォーム材でダイパッドに接着し、各リードの先端とワイ
ヤボンディングなどの電気的接続をし、樹脂で半導体チ
ップおよび各リードの先端部分を封入成形（以下、モー
ルドという）したのち、ポンチなどで連結バーなどを切
断除去し、リードフレームから切り離して製造されてい
る。2. Description of the Related Art A semiconductor device uses a lead frame in which a die pad for die-bonding a semiconductor chip and leads arranged around the die pad are integrally formed by a connecting bar such as a tie bar or a connecting lead, and a semiconductor chip is preformed. Adhesion to the die pad with a material, electrical connection such as wire bonding to the tip of each lead, encapsulation molding of the semiconductor chip and the tip of each lead (hereinafter referred to as mold) with resin, then using a punch or the like to connect bars Manufactured by cutting and removing and separating from the lead frame.
【０００３】この樹脂でモールドしたり、連結バーを切
断する方法は、図３に樹脂でモールドしたリードフレー
ムの状態の概略斜視図を示すように、リードフレーム１
のサイドレール11に形成したインデックス孔12を基準に
してモールド用金型にセッティングし、樹脂２でモール
ドすると共に、そののちのタイバー13などの連結部分の
切断も前記インデックス孔12に切断機の下金型３の位置
決めピン32をセッティングして各リード14を電気的に分
離し半導体装置を形成している。The method of molding with this resin or cutting the connecting bar is as shown in FIG. 3 which is a schematic perspective view of the lead frame molded with resin.
The index holes 12 formed in the side rails 11 are set in the mold for molding, and the resin 2 is used for molding, and then the connecting portions such as the tie bars 13 are also cut into the index holes 12 under the cutting machine. The positioning pins 32 of the mold 3 are set to electrically separate the leads 14 to form a semiconductor device.
【０００４】[0004]
【発明が解決しようとする課題】しかし、従来のリード
フレーム１のインデックス孔12を基準にして連結バーを
切断すると微妙な位置ずれが生じ、タイバー13の切断が
リード14側にずれ込んでリード14が部分的に細くなり、
機械的強度が低下して曲り易くなったり、電気抵抗の増
大などの特性劣化が生じたり、片当りするためタイバー
カットのポンチを部分的に傷め寿命を短くするという問
題がある。However, when the connecting bar is cut with reference to the index hole 12 of the conventional lead frame 1, a slight positional deviation occurs, and the cutting of the tie bar 13 shifts to the lead 14 side, so that the lead 14 is formed. Partly thinner,
There is a problem that the mechanical strength is lowered to make it easier to bend, characteristic deterioration such as increase in electric resistance occurs, and the tie bar cut punch is partially damaged due to one-sided contact to shorten the life.
【０００５】この位置ずれの生じる原因は、本来タイバ
ー13はリードフレーム１の一部であるため、リードフレ
ーム１のインデックス孔12を基準にして正確に定まるは
ずであるが、リードフレームの公差は小さくできず、±
50μｍの公差があること、および樹脂２でモールドする
と冷却時に収縮し、樹脂２による収縮力などのためリー
ドフレーム１のリード14部分も引張られて変形すること
のためと考えられる。この傾向はとくに、半導体装置の
高集積化、小型化の要請が強まり、細いリードで狭ピッ
チ化の進んだ多ピンの半導体装置に顕著に現われてい
る。このような狭ピッチ化の半導体装置ではたとえば、
リード間のピッチが0.3mm 、リード幅が0.1 〜0.12mmで
あり、リードとリードの間隔は0.18mmしかなく、非常に
正確な精度が必要とされる。Since the tie bar 13 is originally a part of the lead frame 1, the cause of this positional deviation should be accurately determined with reference to the index hole 12 of the lead frame 1, but the tolerance of the lead frame is small. I can't, ±
It is considered that there is a tolerance of 50 μm, and that when the resin 2 is molded, the resin shrinks during cooling, and the lead 14 portion of the lead frame 1 is also pulled and deformed due to the shrinking force of the resin 2. This tendency is particularly noticeable in a multi-pin semiconductor device in which the pitch is narrowed by a thin lead due to an increasing demand for high integration and miniaturization of the semiconductor device. In such a narrow pitch semiconductor device, for example,
The lead pitch is 0.3mm, the lead width is 0.1 to 0.12mm, and the lead-to-lead spacing is only 0.18mm, which requires very precise accuracy.
【０００６】本発明はこのような状況に鑑み、細いリー
ドで狭ピッチ化された半導体装置のタイバーなど連結バ
ーの切断除去を正確に行える半導体装置の製法を提供す
ることを目的とする。In view of such circumstances, an object of the present invention is to provide a method of manufacturing a semiconductor device capable of accurately cutting and removing a connecting bar such as a tie bar of a semiconductor device having a narrow pitch with thin leads.
【０００７】[0007]
【課題を解決するための手段】本発明による半導体装置
の製法は、ダイパッドとその周囲に配置されたリード
が、連結バーで相互に連結されたリードフレームの前記
ダイパッドに半導体チップをダイボンディングし、該半
導体チップと前記リードの先端とを電気的接続し、前記
半導体チップおよび前記リードの先端部分を樹脂で封入
成形したのち前記連結バーを切断除去して前記各リード
を電気的に分離する半導体装置の製法であって、前記樹
脂で封入成形する工程で前記樹脂の中心部に基準孔を形
成し、該基準孔により位置決めをして前記連結バーを切
断除去することを特徴とするものである。According to the method of manufacturing a semiconductor device of the present invention, a semiconductor chip is die-bonded to the die pad of a lead frame in which a die pad and leads arranged around the die pad are mutually connected by a connecting bar, A semiconductor device in which the semiconductor chip and the ends of the leads are electrically connected, the ends of the semiconductor chip and the leads are encapsulated and molded, and then the connecting bar is cut and removed to electrically separate the leads. The method is characterized in that a reference hole is formed in the central portion of the resin in the step of molding with the resin, the positioning is performed by the reference hole, and the connecting bar is cut and removed.
【０００８】また、本発明による半導体装置は、ダイパ
ッドに半導体チップがダイボンディングされ、該半導体
チップおよびその周囲の各リードとの電気的接続部が樹
脂で封入成形されてなる半導体装置であって、前記樹脂
の中央部に基準孔が形成され、該基準孔を位置決めとし
て前記各リードがリードフレームから切断分離されてな
ることを特徴とするものである。Further, the semiconductor device according to the present invention is a semiconductor device in which a semiconductor chip is die-bonded to a die pad, and the semiconductor chip and electrical connection portions with respective leads around the semiconductor chip are encapsulated and molded with resin. A reference hole is formed in the central portion of the resin, and each lead is cut and separated from the lead frame by using the reference hole as a positioning.
【０００９】[0009]
【作用】樹脂でモールドするとき、樹脂は中心部に収縮
して固化し、各リード部分も中心部の方に引張られ、リ
ードフレームの状態と比べて各リードの位置にずれが生
じる。しかし本発明によれば樹脂でモールドするときに
樹脂の中心部に基準孔を形成し、その基準孔により連結
バーの切断機の金型を位置合わせしているため、中心部
の基準孔からは左右へのリードの位置ずれはほぼ同程度
で位置合わせがし易く、ずれによるリード部の切断など
がなくなり、正確に連結バーの切断をできる。When the resin is molded, the resin shrinks and solidifies in the central portion, and each lead portion is also pulled toward the central portion, resulting in a shift in the position of each lead compared with the state of the lead frame. However, according to the present invention, the reference hole is formed in the center of the resin when the resin is molded, and the die of the cutting machine of the connecting bar is aligned with the reference hole. The positional deviation of the leads to the left and right is almost the same, and the positioning is easy, and the cutting of the lead portion due to the deviation is eliminated, and the connecting bar can be cut accurately.
【００１０】[0010]
【実施例】つぎに、図面を参照しながら本発明について
説明する。図１は本発明によりタイバーなどの連結バー
を切断する状態を説明する分解斜視図で、図２はその断
面を示す説明図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is an exploded perspective view illustrating a state in which a connecting bar such as a tie bar is cut according to the present invention, and FIG. 2 is an explanatory view showing a cross section thereof.
【００１１】図１〜２において、リードフレーム１のダ
イパッド15に半導体チップ５がダイボンディングされ、
リード14とワイヤボンディングなどの電気的接続がされ
樹脂２でモールドされた状態を示しており、リードフレ
ーム１のサイドレール11にはインデックス孔12が形成さ
れ、樹脂でモールドするときの樹脂流れを防止するため
のタイバー13および周囲の連結リードにより各リード14
は連結されている。本実施例では前工程の樹脂でモール
ドするときに、樹脂２の中心部に基準孔21を形成してい
る。この基準孔21はモールド用金型の下型にピンを形成
しておくことにより、容易に形成できる。この基準孔21
とタイバー13など連結バーを切断する下金型３に形成さ
れた位置決めピン31とを嵌合させることにより、しっか
りと位置決めをすることができる。（図には半導体装置
１個分しか図示されていないが、リードフレームには横
方向に同じ半導体装置が何個も連結されており、各々の
樹脂部分に基準孔が形成されているため回転方向のずれ
は発生しない。）この状態でタイバーポンチ４を上側か
らプレスすることにより、タイバー13など連結バーを正
確に切断でき、リード14をほとんど傷つけないで分離で
きる。1 and 2, the semiconductor chip 5 is die-bonded to the die pad 15 of the lead frame 1,
It shows a state in which the lead 14 is electrically connected by wire bonding or the like and is molded with the resin 2. An index hole 12 is formed in the side rail 11 of the lead frame 1 to prevent resin flow when molding with the resin. Each tie bar 13 with a tie bar 13 for
Are connected. In this embodiment, the reference hole 21 is formed in the center of the resin 2 when the resin is molded in the previous step. The reference hole 21 can be easily formed by forming a pin on the lower die of the molding die. This reference hole 21
It is possible to firmly perform positioning by fitting the positioning pin 31 formed on the lower mold 3 that cuts the connecting bar such as the tie bar 13 to each other. (Only one semiconductor device is shown in the figure, but the same semiconductor device is laterally connected to the lead frame, and the reference hole is formed in each resin portion, so that the rotation direction By pressing the tie bar punch 4 from the upper side in this state, the connecting bar such as the tie bar 13 can be accurately cut, and the leads 14 can be separated with almost no damage.
【００１２】樹脂でモールドするときは、リードフレー
ム１のインデックス孔12を基準にしてリードフレーム１
とモールド用金型との位置合わせをすることになるが、
樹脂が固化するときに収縮力が働き、樹脂の中心方向に
各リード14も引張られる方向にずれを生じる。しかしモ
ールド用金型に形成した基準孔用のピンはモールドされ
る樹脂のほぼ中心部になるように形成されており、しか
もモールド用金型の精度は10μｍ以下で形成できるた
め、成形樹脂の中心部に形成された基準孔21は非常に精
度よく形成できる。そのため、そののちの連結バー切断
用の金型をこの樹脂２に形成された基準孔21により位置
合わせすることにより、リード間隔の狭くなった半導体
装置でも正確に切断できる。When molding with resin, the lead frame 1 is referenced with reference to the index holes 12 of the lead frame 1.
Will be aligned with the mold for molding,
When the resin solidifies, a contracting force acts, and each lead 14 is displaced in the direction of pulling the lead 14 toward the center of the resin. However, the pin for the reference hole formed in the molding die is formed so as to be almost in the center of the resin to be molded, and the accuracy of the molding die can be formed with a precision of 10 μm or less. The reference hole 21 formed in the portion can be formed very accurately. Therefore, by aligning the die for cutting the connecting bar thereafter with the reference hole 21 formed in the resin 2, it is possible to accurately cut even a semiconductor device having a narrow lead interval.
【００１３】前述の樹脂２に形成される基準孔21はリー
ドフレームの下側に形成した例で説明したが、リードフ
レームより上側、すなわち金型の上型に突起を設けて形
成してもよい。このばあい、ポンチ４はリードフレーム
の裏側からプレスすることになる。しかし、前述の理由
によりできるだけ成形された樹脂の中心部に形成するこ
とが望ましい。また基準孔21をダイパッド15の裏側で、
ダイパッド15の裏面が外部と連通するように形成する
と、樹脂の吸湿性による水分がハンダ付けなどの高温状
態で蒸気化したときでも、この基準孔21を経て外部に放
出され、樹脂の剥離ひいてはクラックに発展するのを防
止する効果を兼ねることができる。Although the reference hole 21 formed in the resin 2 is described as being formed on the lower side of the lead frame, it may be formed by providing a protrusion on the upper side of the lead frame, that is, on the upper die of the die. . In this case, the punch 4 is pressed from the back side of the lead frame. However, for the above-mentioned reason, it is desirable to form the resin at the center of the molded resin as much as possible. In addition, the reference hole 21 on the back side of the die pad 15,
When the back surface of the die pad 15 is formed so as to communicate with the outside, even when the moisture due to the hygroscopicity of the resin is vaporized in a high temperature state such as soldering, the moisture is released to the outside through the reference hole 21, and the resin peels and cracks. It can also have the effect of preventing the development.
【００１４】また前述のモールド時に基準孔を形成する
のに、モールド用金型のピンをテーパ形に形成して円錐
台状の基準孔を形成すればモールド後に成形品を金型か
ら取り外すとき容易に分離でき、基準孔に傷をつけたり
変形させることがない。このばあい、連結バー切断の金
型の位置決めピンもテーパに形成すればよい。Further, in forming the reference hole at the time of the above-mentioned molding, if the pin of the mold for molding is formed into a tapered shape and the reference hole of a truncated cone shape is formed, it is easy to remove the molded product from the mold after molding. The reference hole is not damaged or deformed. In this case, the positioning pin of the mold for cutting the connecting bar may be tapered.
【００１５】[0015]
【発明の効果】以上説明したように本発明によれば、連
結バーの切断を樹脂でモールドするときに樹脂の中央部
付近に形成された基準孔を位置決めにして切断機の抜き
型を合わせているため、樹脂の固化のときに収縮などに
より生じるリードの変形に対しても対応でき、正確に連
結バーの切断をできる。その結果、リードを部分的に細
くして機械的強度を弱めたり、電気的特性を悪化させる
ことがなく、歩留が向上する。また連結バーを切断する
ポンチも片当りしないため、部分的損耗がなく設備の長
寿命化につながる。As described above, according to the present invention, when the cutting of the connecting bar is molded with resin, the reference hole formed in the vicinity of the central portion of the resin is positioned and the cutting die of the cutting machine is aligned. Therefore, it is possible to cope with the deformation of the leads caused by shrinkage when the resin is solidified, and the connecting bar can be cut accurately. As a result, the lead is partially thinned to reduce the mechanical strength and the electrical characteristics are not deteriorated, and the yield is improved. In addition, since the punch for cutting the connecting bar does not hit one side, there is no partial wear and the life of the equipment is extended.
【００１６】さらに、樹脂でモールドするときに基準孔
を形成するため、この基準孔をダイパッドの裏側に連通
するように形成すれば、樹脂で吸湿した水分の蒸気を外
部に逃がすことができ、樹脂の剥離やクラックを防止す
ることもできる。Further, since the reference hole is formed when the resin is molded, if the reference hole is formed so as to communicate with the back side of the die pad, the moisture vapor absorbed by the resin can escape to the outside. It is also possible to prevent peeling and cracks.
【図１】本発明の一実施例である連結バーを切断する状
態を説明する分解斜視図である。FIG. 1 is an exploded perspective view illustrating a state in which a connecting bar according to an embodiment of the present invention is cut.
【図２】図１の断面を示す図である。FIG. 2 is a diagram showing a cross section of FIG.
【図３】従来の連結バーを切断する状態を説明する斜視
図である。FIG. 3 is a perspective view illustrating a state in which a conventional connecting bar is cut.
１ リードフレーム ２ 樹脂 ５ 半導体チップ 13 タイバー 14 リード 21 基準孔 31 位置決めピン 1 Lead frame 2 Resin 5 Semiconductor chip 13 Tie bar 14 Lead 21 Reference hole 31 Positioning pin
Claims (2)
ドが、連結バーで相互に連結されたリードフレームの前
記ダイパッドに半導体チップをダイボンディングし、該
半導体チップと前記リードの先端とを電気的接続し、前
記半導体チップおよび前記リードの先端部分を樹脂で封
入成形したのち前記連結バーを切断除去して前記各リー
ドを電気的に分離する半導体装置の製法であって、前記
樹脂で封入成形する工程で前記樹脂の中心部に基準孔を
形成し、該基準孔により位置決めをして前記連結バーを
切断除去することを特徴とする半導体装置の製法。1. A semiconductor chip is die-bonded to the die pad of a lead frame in which a die pad and leads arranged around the die pad are mutually connected by a connecting bar, and the semiconductor chip and the tip of the lead are electrically connected. A method of manufacturing a semiconductor device in which the tip ends of the semiconductor chip and the leads are encapsulated with resin, and then the connecting bar is cut and removed to electrically separate the leads from each other. 2. A method of manufacturing a semiconductor device, wherein a reference hole is formed in the central part of the resin, the positioning is performed by the reference hole, and the connecting bar is cut and removed.
ィングされ、該半導体チップおよびその周囲の各リード
との電気的接続部が樹脂で封入成形されてなる半導体装
置であって、前記樹脂の中央部に基準孔が形成され、該
基準孔を位置決めとして前記各リードがリードフレーム
から切断分離されてなる半導体装置。2. A semiconductor device in which a semiconductor chip is die-bonded to a die pad, and an electrical connection portion between the semiconductor chip and each of the leads around the semiconductor chip is encapsulated and molded by a resin, wherein a central portion of the resin is used as a reference. A semiconductor device in which a hole is formed and each of the leads is cut and separated from a lead frame by using the reference hole as a positioning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4023730A JP2983105B2 (en) | 1992-02-10 | 1992-02-10 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4023730A JP2983105B2 (en) | 1992-02-10 | 1992-02-10 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05226546A true JPH05226546A (en) | 1993-09-03 |
| JP2983105B2 JP2983105B2 (en) | 1999-11-29 |
Family
ID=12118436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4023730A Expired - Fee Related JP2983105B2 (en) | 1992-02-10 | 1992-02-10 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2983105B2 (en) |
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| WO2013099415A1 (en) * | 2011-12-26 | 2013-07-04 | 株式会社フジクラ | Optical module |
| JP2013134347A (en) * | 2011-12-26 | 2013-07-08 | Fujikura Ltd | Optical module |
| JP2013134348A (en) * | 2011-12-26 | 2013-07-08 | Fujikura Ltd | Positioning method and optical module |
| JP2013164639A (en) * | 2013-05-31 | 2013-08-22 | Fujikura Ltd | Optical module |
| JP2013190821A (en) * | 2013-05-31 | 2013-09-26 | Fujikura Ltd | Optical module |
| JP2014071150A (en) * | 2012-09-27 | 2014-04-21 | Fujikura Ltd | Module manufacturing method, and module |
| CN116373209A (en) * | 2023-06-05 | 2023-07-04 | 宁波中车时代传感技术有限公司 | Manufacturing method of plastic package current detection device and plastic package current detection device |
-
1992
- 1992-02-10 JP JP4023730A patent/JP2983105B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013099415A1 (en) * | 2011-12-26 | 2013-07-04 | 株式会社フジクラ | Optical module |
| JP2013134347A (en) * | 2011-12-26 | 2013-07-08 | Fujikura Ltd | Optical module |
| JP2013134348A (en) * | 2011-12-26 | 2013-07-08 | Fujikura Ltd | Positioning method and optical module |
| CN103282814A (en) * | 2011-12-26 | 2013-09-04 | 株式会社藤仓 | Optical module |
| US8842952B2 (en) | 2011-12-26 | 2014-09-23 | Fujikura Ltd. | Optical module |
| CN103282814B (en) * | 2011-12-26 | 2015-02-25 | 株式会社藤仓 | Optical module |
| US9453978B2 (en) | 2011-12-26 | 2016-09-27 | Fujikura Ltd. | Optical module |
| JP2014071150A (en) * | 2012-09-27 | 2014-04-21 | Fujikura Ltd | Module manufacturing method, and module |
| JP2013164639A (en) * | 2013-05-31 | 2013-08-22 | Fujikura Ltd | Optical module |
| JP2013190821A (en) * | 2013-05-31 | 2013-09-26 | Fujikura Ltd | Optical module |
| CN116373209A (en) * | 2023-06-05 | 2023-07-04 | 宁波中车时代传感技术有限公司 | Manufacturing method of plastic package current detection device and plastic package current detection device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2983105B2 (en) | 1999-11-29 |
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