JPH05218279A - Lead fixing structure of high frequency package - Google Patents
Lead fixing structure of high frequency packageInfo
- Publication number
- JPH05218279A JPH05218279A JP4019599A JP1959992A JPH05218279A JP H05218279 A JPH05218279 A JP H05218279A JP 4019599 A JP4019599 A JP 4019599A JP 1959992 A JP1959992 A JP 1959992A JP H05218279 A JPH05218279 A JP H05218279A
- Authority
- JP
- Japan
- Prior art keywords
- package
- lead
- small diameter
- diameter part
- diameter portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、高周波デバイス用パッ
ケージのリード取付構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead mounting structure for a high frequency device package.
【0002】[0002]
【従来の技術】一般に、高周波デバイス用パッケージ
は、金属性のパッケージ内部に不活性ガスを封入して組
み立てられる。パッケージによってシールド効果を持た
せるとともに、水分等の侵入を阻止して耐久性を高め
る。ところで、かかる高周波デバイスへの信号伝達は、
パッケージの貫通穴に挿入したリードを通して行われ、
このリードと貫通穴の封止にはガラスが用いられる。す
なわち、図4において、パッケージ1の両面(パッケー
ジの内面と外面)を貫通する貫通穴2の軸線に沿ってリ
ード3を挿入するとともに、その貫通穴2をガラス4に
よって封止する。2. Description of the Related Art Generally, a package for a high frequency device is assembled by enclosing an inert gas in a metallic package. The package has a shielding effect and prevents ingress of moisture etc. to improve durability. By the way, the signal transmission to such a high frequency device is
Through the lead inserted in the through hole of the package,
Glass is used to seal the leads and the through holes. That is, in FIG. 4, the lead 3 is inserted along the axis of the through hole 2 penetrating both surfaces (the inner surface and the outer surface of the package) of the package 1, and the through hole 2 is sealed with the glass 4.
【0003】リード3と貫通穴2は特性インピーダンス
(例えば50オーム)の分布定数線路を構成し、そのイ
ンピーダンスの大きさは、信号の周波数やガラス4の誘
電率、並びに貫通穴2の内径φLに依存する。ここで、
貫通穴2の内径φLはできるだけ小さいことが求められ
る。これは、図4に示すように、リード3の先端と電子
回路5の間を接続するワイヤ6がφLに比例して長くな
るために、このワイヤ部分における高周波特性の劣化、
すなわちミスマッチングが増大するからである。The lead 3 and the through hole 2 form a distributed constant line having a characteristic impedance (for example, 50 ohms). The magnitude of the impedance depends on the frequency of the signal, the dielectric constant of the glass 4, and the inner diameter φ L of the through hole 2. Depends on. here,
The inner diameter φ L of the through hole 2 is required to be as small as possible. This is because, as shown in FIG. 4, since the wire 6 connecting the tip of the lead 3 and the electronic circuit 5 becomes long in proportion to φ L , the deterioration of the high frequency characteristics in this wire portion,
That is, mismatching increases.
【0004】そこで、本出願人は先に、「高周波素子用
パッケージの同軸線路」を提案している(特願平3−3
39856号 平成3年11月27日出願)。この先願
の技術は、図5に示すように、パッケージ7の貫通穴8
に小径部8aと大径部8bを形成し、大径部8bをガラ
ス9で封止するとともに、小径部8aを空間部としてい
る。Therefore, the present applicant has previously proposed "a coaxial line of a package for a high frequency element" (Japanese Patent Application No. 3-3).
No. 39856, filed on November 27, 1991). As shown in FIG. 5, the technology of this prior application is based on the through hole 8 of the package 7.
The small-diameter portion 8a and the large-diameter portion 8b are formed on the glass, the large-diameter portion 8b is sealed with the glass 9, and the small-diameter portion 8a serves as a space portion.
【0005】これによれば、半導体素子を気密封止する
際に、小径部8aにチッ素、アルゴンなどの不活性ガス
を導入でき、この不活性ガスを絶縁体とした分布定数線
路を形成できる。一般に、空気等の気体の誘電率はガラ
スの誘電率よりも小さい(例えば空気の誘電率は1.
0)から、貫通穴8の小径部8aの内径φSをガラスの
場合の内径φLよりも小径にでき、それだけ、ワイヤ1
1の長さを短縮化してミスマッチングの影響を抑えるこ
とができる。According to this, when the semiconductor element is hermetically sealed, an inert gas such as nitrogen or argon can be introduced into the small diameter portion 8a, and a distributed constant line can be formed using this inert gas as an insulator. .. Generally, the dielectric constant of gas such as air is smaller than that of glass (for example, the dielectric constant of air is 1.
From 0), the inner diameter φ S of the small diameter portion 8a of the through hole 8 can be made smaller than the inner diameter φ L in the case of glass.
The length of 1 can be shortened to suppress the influence of mismatching.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、かかる
先願の技術にあっては、小径部に導入した不活性ガスの
誘電率によって貫通穴の小径部の内径をガラスの場合の
内径φLより小径にでき、ワイヤーを短縮化できる点で
有効であるが、小径部におけるリードの保持が確実でな
いために、ワイヤボンディング時などの振動等によって
リードが傾いたりして偏心する(リードが貫通穴の中心
軸線から外れる)ことがあり、特性インピーダンスが変
化するといった改善すべき余地がある。However, in the technique of the prior application, the inner diameter of the small diameter portion of the through hole is smaller than the inner diameter φ L in the case of glass due to the dielectric constant of the inert gas introduced into the small diameter portion. It is effective in that it can shorten the wire, but since the lead is not held securely in the small diameter part, the lead may be tilted due to vibration during wire bonding, etc. There is room for improvement, such as deviation from the axis), and changes in the characteristic impedance.
【0007】そこで、本発明は、ワイヤーを短縮化でき
るとともに、リードの保持を確実にして特性インピーダ
ンスの安定化を図ることを目的とする。Therefore, it is an object of the present invention to shorten the wire and ensure the retention of the lead to stabilize the characteristic impedance.
【0008】[0008]
【課題を解決するための手段】本発明は、上記目的を達
成するために、導電性材料からなるパッケージの内部を
臨んで開口する小径部と、該パッケージの外部を臨んで
開口する大径部とを有する貫通穴に、該小径部よりも小
径のリードを通し、且つ、前記大径部とリード間にガラ
スを介在させて構成する高周波パッケージのリード取付
構造において、前記小径部の一部または全部とリードの
間に、空気の誘電率に近い所定材料を介在させたことを
特徴とする。In order to achieve the above-mentioned object, the present invention has a small-diameter portion facing the inside of a package made of a conductive material and a large-diameter portion facing the outside of the package. In a lead mounting structure of a high-frequency package, in which a lead having a diameter smaller than that of the small diameter portion is passed through a through hole having and a glass is interposed between the large diameter portion and the lead, a part of the small diameter portion or It is characterized in that a predetermined material having a dielectric constant close to that of air is interposed between the whole and the lead.
【0009】[0009]
【作用】本発明では、小径部内のリードが空気等の気体
の誘電率に近い所定材料によって保持される。したがっ
て、所定材料の誘電率に依存して小径部の内径が小さく
なり、ワイヤ長が短縮化される。In the present invention, the lead in the small diameter portion is held by a predetermined material having a dielectric constant close to that of gas such as air. Therefore, the inner diameter of the small diameter portion is reduced depending on the dielectric constant of the predetermined material, and the wire length is shortened.
【0010】また、所定材料による保持効果により、組
み立ての際や、半導体装置としての使用中に外部からの
振動によって生ずるリードの位置ずれが確実に回避され
る。さらに、所定材料にガラスの融点よりも高いものを
用いれば、ガラス封止と同時に所定材料を圧入すること
ができる。Further, due to the holding effect of the predetermined material, positional deviation of the leads caused by external vibration during assembly or during use as a semiconductor device is reliably avoided. Furthermore, if a predetermined material having a melting point higher than that of glass is used, the predetermined material can be press-fitted at the same time as the glass sealing.
【0011】[0011]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1は本発明に係る高周波パッケージのリード取
付構造の第1実施例を示す図である。図1において、2
0はレーザ発光素子等の光デバイスや超高周波増幅器等
を収容するパッケージの部分断面である。導電性材料
(例えば、鉄−ニッケル−コバルト合金)からなるパッ
ケージ20はボックス構造を有しており、図面の上側が
パッケージ内部に面し、図面の下側がパッケージ外部に
面している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a first embodiment of a lead mounting structure for a high frequency package according to the present invention. In FIG. 1, 2
Reference numeral 0 is a partial cross section of a package that houses an optical device such as a laser light emitting element, an ultra high frequency amplifier, and the like. The package 20 made of a conductive material (for example, iron-nickel-cobalt alloy) has a box structure, and the upper side of the drawing faces the inside of the package and the lower side of the drawing faces the outside of the package.
【0012】パッケージ20にはその内外面を貫通する
貫通穴21が穿設され、貫通穴21は、パッケージの内
側を臨んで開口する小径部21aとパッケージの外側を
臨んで開口する大径部21bとを有している。22は、
これら小径部21a及び大径部21bの中心軸線に一致
するように挿入されたリードであり、リード22の外径
は小径部21aの内径よりも小さい。また、23は大径
部21bに封入されたガラス、24は小径部21aに圧
入された所定材料であり、この所定材料24にはガラス
23の誘電率よりも低い誘電率を持つものを使用する。
例えばゴアテックス等の発砲樹脂は、気泡を多く含むた
めに、ガラス23の誘電率(成分にもよるが4〜9)よ
りも低く、空気気等の気体の誘電率に近い誘電率(およ
そ2)を持つので好ましい。The package 20 is provided with a through hole 21 penetrating the inner and outer surfaces thereof, and the through hole 21 has a small diameter portion 21a opening to the inside of the package and a large diameter portion 21b opening to the outside of the package. And have. 22 is
The leads 22 are inserted so as to match the central axes of the small diameter portion 21a and the large diameter portion 21b, and the outer diameter of the lead 22 is smaller than the inner diameter of the small diameter portion 21a. Further, 23 is a glass sealed in the large diameter portion 21b, 24 is a predetermined material press-fitted into the small diameter portion 21a, and the predetermined material 24 having a dielectric constant lower than that of the glass 23 is used. ..
For example, a foam resin such as GORE-TEX has a lower dielectric constant (4-9 depending on the component) of the glass 23 because it contains many bubbles, and is close to the dielectric constant of a gas such as air (about 2). ) Is preferred.
【0013】このような構成において、貫通穴21のパ
ッケージ内側の開口径(すなわち小径部21aの内径)
φSは、リード22によって伝達される信号の周波数や
特性インピーダンス及び所定材料24の誘電率によって
決まり、ガラス封止の場合(図4のφL参照)よりも小
さくなる。したがって、φLとφSの差だけ、パッケージ
内部の電子回路25とリード22を接近させることがで
き、ワイヤ26を短くしてミスマッチングの影響を抑え
ることができる。In such a structure, the opening diameter of the through hole 21 inside the package (that is, the inner diameter of the small diameter portion 21a).
φ S is determined by the frequency and the characteristic impedance of the signal transmitted by the lead 22 and the dielectric constant of the predetermined material 24, and is smaller than that in the case of glass sealing (see φ L in FIG. 4). Therefore, the electronic circuit 25 inside the package and the lead 22 can be brought close to each other by the difference between φ L and φ S , and the wire 26 can be shortened to suppress the influence of mismatching.
【0014】しかも、所定材料24によってリード22
を確実に保持できるため、組み立ての際や、半導体装置
として使用中に外部からの振動等によって生ずるリード
22の偏心を回避でき、リード22を常に正しい位置に
保持して特性インピーダンスの安定化を図ることができ
る。なお、本発明は、上記実施例に限られるものではな
く、その意図する範囲において、様々な変形態様が考え
られる。Moreover, the lead 22 is made of the predetermined material 24.
Since the lead 22 can be reliably held, eccentricity of the lead 22 caused by external vibration during assembly or during use as a semiconductor device can be avoided, and the lead 22 is always held in the correct position to stabilize the characteristic impedance. be able to. It should be noted that the present invention is not limited to the above-mentioned embodiments, and various modifications can be considered within the intended scope.
【0015】例えば、図2にその第2実施例を示すよう
に、小径部21aの開口付近だけを薄板30で封止した
り、あるいは図3にその第3実施例を示すように、小径
部21aの開口端を鍔付キャップ31で封止したりして
もよい。これらの薄板30や鍔付キャップ31は、第1
実施例の所定材料24と同じ材料、すなわち誘電率が空
気等の気体の誘電率に近い材料を使用する。For example, as shown in FIG. 2 of the second embodiment, only the vicinity of the opening of the small diameter portion 21a is sealed with the thin plate 30, or as shown in FIG. 3 of the third embodiment, the small diameter portion. The open end of 21a may be sealed with the flanged cap 31. These thin plate 30 and collar cap 31 are
The same material as the predetermined material 24 of the embodiment, that is, a material having a dielectric constant close to that of a gas such as air is used.
【0016】[0016]
【発明の効果】本発明によれば、ワイヤーを短縮化でき
るとともに、リードの保持を確実にして偏心を回避で
き、特性インピーダンスの安定化を図ることができる。According to the present invention, the wire can be shortened, the lead can be securely held, eccentricity can be avoided, and the characteristic impedance can be stabilized.
【図1】第1実施例の断面図である。FIG. 1 is a sectional view of a first embodiment.
【図2】第2実施例の断面図である。FIG. 2 is a sectional view of a second embodiment.
【図3】第3実施例の断面図である。FIG. 3 is a sectional view of a third embodiment.
【図4】従来例の断面図である。FIG. 4 is a sectional view of a conventional example.
【図5】先願に係る従来例の断面図である。FIG. 5 is a cross-sectional view of a conventional example according to the prior application.
20:パッケージ 21:貫通穴 21a:小径部 21b:大径部 22:リード 23:ガラス 24:所定材料 20: Package 21: Through hole 21a: Small diameter part 21b: Large diameter part 22: Lead 23: Glass 24: Predetermined material
Claims (1)
んで開口する小径部と、該パッケージの外部を臨んで開
口する大径部とを有する貫通穴に、該小径部よりも小径
のリードを通し、且つ、前記大径部とリード間にガラス
を介在させて構成する高周波パッケージのリード取付構
造において、 前記小径部の一部または全部とリードの間に、空気の誘
電率に近い所定材料を介在させたことを特徴とする高周
波パッケージのリード取付構造。1. A lead having a diameter smaller than the small diameter portion is inserted into a through hole having a small diameter portion facing the inside of the package made of a conductive material and opening, and a large diameter portion facing the outside of the package. In a lead mounting structure of a high-frequency package which is configured to pass through and through which glass is interposed between the large diameter portion and the lead, a predetermined material having a dielectric constant of air close to a part or all of the small diameter portion and the lead is provided. High frequency package lead mounting structure characterized by being interposed.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4019599A JPH05218279A (en) | 1992-02-05 | 1992-02-05 | Lead fixing structure of high frequency package |
EP92310862A EP0544538B1 (en) | 1991-11-27 | 1992-11-27 | Coaxial line assembly |
DE69218122T DE69218122T2 (en) | 1991-11-27 | 1992-11-27 | Arrangement for a coaxial line |
US08/352,157 US5557074A (en) | 1991-11-27 | 1994-12-08 | Coaxial line assembly of a package for a high frequency element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4019599A JPH05218279A (en) | 1992-02-05 | 1992-02-05 | Lead fixing structure of high frequency package |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05218279A true JPH05218279A (en) | 1993-08-27 |
Family
ID=12003691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4019599A Pending JPH05218279A (en) | 1991-11-27 | 1992-02-05 | Lead fixing structure of high frequency package |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05218279A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261188A (en) * | 2001-03-05 | 2002-09-13 | Omron Corp | Package structure for electronic component |
JP2009239113A (en) * | 2008-03-27 | 2009-10-15 | Shinko Electric Ind Co Ltd | Package for optical semiconductor element |
JP2020036008A (en) * | 2018-08-27 | 2020-03-05 | ショット アクチエンゲゼルシャフトSchott AG | TO package with ground connection |
-
1992
- 1992-02-05 JP JP4019599A patent/JPH05218279A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261188A (en) * | 2001-03-05 | 2002-09-13 | Omron Corp | Package structure for electronic component |
JP2009239113A (en) * | 2008-03-27 | 2009-10-15 | Shinko Electric Ind Co Ltd | Package for optical semiconductor element |
JP2020036008A (en) * | 2018-08-27 | 2020-03-05 | ショット アクチエンゲゼルシャフトSchott AG | TO package with ground connection |
US11128101B2 (en) | 2018-08-27 | 2021-09-21 | Schott Ag | Transistor outline package with ground connection |
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