JP2002164453A - Semiconductor element storing package - Google Patents

Semiconductor element storing package

Info

Publication number
JP2002164453A
JP2002164453A JP2000362228A JP2000362228A JP2002164453A JP 2002164453 A JP2002164453 A JP 2002164453A JP 2000362228 A JP2000362228 A JP 2000362228A JP 2000362228 A JP2000362228 A JP 2000362228A JP 2002164453 A JP2002164453 A JP 2002164453A
Authority
JP
Japan
Prior art keywords
frame
holding member
circuit board
coaxial connector
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000362228A
Other languages
Japanese (ja)
Inventor
Nobuyuki Tanaka
信幸 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000362228A priority Critical patent/JP2002164453A/en
Publication of JP2002164453A publication Critical patent/JP2002164453A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

PROBLEM TO BE SOLVED: To make the transmission efficiency of a high frequency signal excellent in a semiconductor element storing package using a coaxial connector on the input and output of the signal. SOLUTION: In the constitution fitting the holding member 11 of the coaxial connector 3 to the fitting part 2a of a frame body 2, the holding member 11 penetrates the inside and outside of a frame body 2, a through hole 11b inserting the coaxial connector 3 from the outside is formed, a shelf part 11a installing a circuit board 6 on the upper face at a part downward of the through hole 11b of the face of the inside of the frame body 2 is provided, further a line conductor 6a electrically connecting the end of a central conductor 3b projected from the face of the inside of the frame body 2 and a semiconductor element 5 is formed on the surface of a circuit board 6, and the fitting part 2a is fitted on the frame body through a metal cushion material 12 whose Young's modulus is smaller than the frame body 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は信号入出力部として
同軸コネクタを具備した半導体素子収納用パッケージに
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device package having a coaxial connector as a signal input / output unit.

【0002】[0002]

【従来の技術】従来、光通信やマイクロ波帯、ミリ波帯
等の高周波信号を用いる各種半導体素子を収納する半導
体素子収納用パッケージ(以下、半導体パッケージとい
う)には、半導体素子と外部電気回路基板とを電気的に
接続するための入出力端子として同軸コネクタが設けら
れている。この同軸コネクタを具備した半導体パッケー
ジを図4に断面図で示す。
2. Description of the Related Art Conventionally, a semiconductor element housing package (hereinafter referred to as a semiconductor package) for housing various semiconductor elements using high-frequency signals in optical communication, microwave band, millimeter wave band, etc. has a semiconductor element and an external electric circuit. A coaxial connector is provided as an input / output terminal for electrically connecting to a substrate. FIG. 4 is a cross-sectional view of a semiconductor package provided with the coaxial connector.

【0003】同図において、21は基体、22は枠体、
23は同軸コネクタ、24は蓋体である。
[0003] In the figure, 21 is a base, 22 is a frame,
23 is a coaxial connector and 24 is a lid.

【0004】基体21は鉄−ニッケル−コバルト合金や
銅−タングステンの焼結材等の金属から成る略四角形状
の板状体であり、その上側主面略中央部には、IC、L
SI、半導体レーザ(LD)、フォトダイオード(P
D)等の半導体素子25を搭載して成る回路基板26を
載置する載置部21aが形成されており、載置部21a
には半導体素子25が、例えばアルミナ質セラミックス
から成る回路基板26に搭載された状態で載置固定され
る。
The base 21 is a substantially square plate made of a metal such as an iron-nickel-cobalt alloy or a sintered material of copper-tungsten.
SI, semiconductor laser (LD), photodiode (P
A mounting portion 21a for mounting a circuit board 26 on which a semiconductor element 25 such as D) is mounted is formed.
The semiconductor element 25 is mounted and fixed on a circuit board 26 made of, for example, alumina ceramics.

【0005】なお、回路基板26に搭載された半導体素
子25は、その電極が回路基板26に被着形成されてい
る線路導体26aにボンディングワイヤ27等を介して
電気的に接続されている。
The electrodes of the semiconductor element 25 mounted on the circuit board 26 are electrically connected to line conductors 26a formed on the circuit board 26 via bonding wires 27 and the like.

【0006】基体21の上側主面外周部には載置部21
aを囲繞するようにして枠体22が立設されており、枠
体22は基体21とともにその内側に半導体素子25を
収容する空所を形成する。
The mounting portion 21 is provided on the outer peripheral portion of the upper main surface of the base 21.
The frame 22 is erected so as to surround a. The frame 22 forms a space for accommodating the semiconductor element 25 inside the base together with the base 21.

【0007】枠体22は基体21と同様に鉄−ニッケル
−コバルト合金や銅−タングステンの焼結材等から成
り、基体21と一体成形されることによって、あるいは
基体21に銀ろう等のろう材を介してろう付けされた
り、シーム溶接法等の溶接法により接合されることによ
って基体21の上側主面外周部に立設される。
The frame 22 is made of a sintered material of iron-nickel-cobalt alloy or copper-tungsten similarly to the base 21, and is formed integrally with the base 21 or the base 21 is made of a brazing material such as silver solder. The base 21 is erected on the outer peripheral portion of the upper main surface of the base 21 by brazing through a joint or by a welding method such as a seam welding method.

【0008】同軸コネクタ23は、鉄−ニッケル−コバ
ルト合金等の金属から成る円筒状の外周導体23aの中
心部に鉄−ニッケル−コバルト合金等の金属から成る棒
状の中心導体23bが絶縁体23cを介して固定されて
成る。
In the coaxial connector 23, a rod-shaped central conductor 23b made of a metal such as an iron-nickel-cobalt alloy is provided with an insulator 23c at the center of a cylindrical outer conductor 23a made of a metal such as an iron-nickel-cobalt alloy. It is fixed through.

【0009】枠体22の側面には同軸コネクタ23が外
側より挿着される貫通孔22aが形成されている。貫通
孔22a内に外周導体23aを挿入するとともに半田等
の封着材28を挿入し、しかる後、加熱して封着材28
を溶融させ、溶融した封着材28を毛細管現象により外
周導体23aと貫通孔22aの内壁との隙間に充填させ
ることによって、同軸コネクタ23が枠体22の貫通孔
22a内に半田等の封着材28を介して挿着される。グ
ランドとしての外周導体23aが封着材28を介して枠
体22に電気的に接続され、また中心導体23bが半田
等から成る導電性接着材26bを介して回路基板26の
線路導体26aに電気的に接続されることとなる。
A through hole 22a into which a coaxial connector 23 is inserted from the outside is formed on a side surface of the frame 22. The outer conductor 23a is inserted into the through-hole 22a, and at the same time, a sealing material 28 such as solder is inserted.
Is melted, and the molten sealing material 28 is filled into the gap between the outer conductor 23a and the inner wall of the through hole 22a by capillary action, so that the coaxial connector 23 seals the inside of the through hole 22a of the frame 22 with solder or the like. It is inserted through the material 28. The outer conductor 23a as a ground is electrically connected to the frame 22 via a sealing material 28, and the center conductor 23b is electrically connected to the line conductor 26a of the circuit board 26 via a conductive adhesive 26b made of solder or the like. Will be connected.

【0010】この同軸コネクタ23を備えた半導体パッ
ケージは、内周面にネジ切りを有する貫通孔22bに同
軸コネクタプラグ29のネジ状の外周面がネジ止めさ
れ、外部電気回路に接続された同軸ケーブル30が同軸
コネクタプラグ29に装着されることによって、内部に
収納された半導体素子25が同軸コネクタ23の中心導
体23bを介して外部電気回路に電気的に接続されるこ
ととなる。
In the semiconductor package provided with the coaxial connector 23, the coaxial connector plug 29 has a threaded outer peripheral surface screwed into the through hole 22b having a threaded inner peripheral surface, and is connected to an external electric circuit. By attaching 30 to the coaxial connector plug 29, the semiconductor element 25 housed inside is electrically connected to an external electric circuit via the central conductor 23 b of the coaxial connector 23.

【0011】枠体22の上面に蓋体24をろう付け法や
シームウエルド法等の溶接法を採用して接合し、基体2
1、枠体22および蓋体24から成る容器内部に半導体
素子25を収容し気密に封止することによって製品とし
ての半導体装置となる。
The lid 24 is joined to the upper surface of the frame 22 by using a welding method such as brazing or seam welding.
1. A semiconductor device as a product is obtained by accommodating the semiconductor element 25 in a container formed by the frame body 22 and the lid body 24 and hermetically sealing it.

【0012】この半導体パッケージは、基体21に貫通
孔21bが設けられており、貫通孔21bにネジを止め
ることにより、外部回路基板等に実装されることとな
る。
This semiconductor package is provided with a through hole 21b in the base 21, and is mounted on an external circuit board or the like by fixing a screw in the through hole 21b.

【0013】[0013]

【発明が解決しようとする課題】しかしながら、従来の
半導体パッケージでは、貫通孔21bにネジを止め、外
部回路基板等に実装する際、半導体パッケージの製造時
に反ってしまっていた基体21の反りが矯正されること
となり、基体21に載置固定されていた回路基板26に
クラックが入り、線路導体26aが寸断され、高周波信
号を伝送できなくなる原因となっていた。
However, in the conventional semiconductor package, when the screw is fixed to the through hole 21b and mounted on an external circuit board or the like, the warpage of the base 21 which has been warped at the time of manufacturing the semiconductor package is corrected. As a result, the circuit board 26 mounted and fixed on the base 21 is cracked, the line conductor 26a is cut off, and high-frequency signals cannot be transmitted.

【0014】基体21の反りが矯正されると、枠体22
が歪み、貫通孔22aに挿着された外周導体23aに応
力が加わることとなり、外周導体23aの内周面に介在
させた絶縁体23cにクラックが入ってしまい、半導体
パッケージの気密性を損なうとともに、同軸コネクタ2
3の中心導体23bを伝送する高周波信号の伝送効率を
劣化させるという問題点があった。さらに、枠体22の
歪みにより貫通孔22aの位置が本来あるべき位置から
ずれることとなり、貫通孔22aに挿着された外周導体
23aがずれてしまい、同軸コネクタ23の全体の位置
もずれてしまう。そのため、中心導体23bが導電性接
着材26bから外れ、高周波信号の伝送ができなくなる
原因となっていた。
When the warpage of the base 21 is corrected, the frame 22
Is distorted, and stress is applied to the outer conductor 23a inserted in the through hole 22a, and a crack is formed in the insulator 23c interposed on the inner peripheral surface of the outer conductor 23a, thereby impairing the airtightness of the semiconductor package. , Coaxial connector 2
There is a problem that the transmission efficiency of the high-frequency signal transmitted through the third center conductor 23b is deteriorated. Further, the position of the through-hole 22a is shifted from the original position due to the distortion of the frame 22, the outer conductor 23a inserted in the through-hole 22a is shifted, and the entire position of the coaxial connector 23 is also shifted. . For this reason, the center conductor 23b comes off the conductive adhesive 26b, which causes a high-frequency signal to be unable to be transmitted.

【0015】中心導体23bのずれ量が少なく、中心導
体23bと導電性接着材26bの接続が保たれたとして
も、回路基板26は基体21上に載置され、同軸コネク
タ23は枠体22の側面に設けられた貫通孔22aに挿
着されていることから、半導体パッケージ製造時におい
て、基体21の上側主面に枠体22を接合する位置がず
れて、中心導体23bと線路導体26aとの接続部の位
置がずれることがあった。そのため、接続部におけるイ
ンピーダンスが安定せず、接続部において高周波信号の
伝送効率が劣化することがあった。
Even if the displacement of the center conductor 23b is small and the connection between the center conductor 23b and the conductive adhesive 26b is maintained, the circuit board 26 is mounted on the base 21 and the coaxial connector 23 is mounted on the frame 22. Since it is inserted into the through hole 22a provided on the side surface, the position at which the frame body 22 is joined to the upper main surface of the base 21 is shifted during the manufacture of the semiconductor package, and the center conductor 23b and the line conductor 26a are displaced. The position of the connection part sometimes shifted. For this reason, the impedance at the connecting portion was not stabilized, and the transmission efficiency of the high-frequency signal was sometimes deteriorated at the connecting portion.

【0016】従って、本発明は上記問題点に鑑み完成さ
れたものであり、高周波信号の伝送効率にすぐれた半導
体パッケージを提供することを目的としている。
Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to provide a semiconductor package having excellent high-frequency signal transmission efficiency.

【0017】[0017]

【課題を解決するための手段】本発明の半導体素子収納
用パッケージは、上側主面に半導体素子を載置するため
の載置部を有する基体と、前記上側主面の外周部に前記
載置部を囲繞するように接合され、かつ側部に同軸コネ
クタの保持部材を嵌着させる貫通孔または切り欠き部か
ら成る嵌着部が設けられた枠体と、筒状の外周導体およ
びその中心軸に設置させた中心導体ならびにそれらの間
に介在させた絶縁体から成るとともに前記嵌着部に嵌着
された同軸コネクタとを具備した半導体素子収納用パッ
ケージにおいて、前記保持部材は、前記枠体内外を貫通
するとともに外側より前記同軸コネクタを挿着する貫通
孔が形成され、かつ前記枠体内側の面の前記貫通孔の下
方の部位に回路基板を上面に設置した棚部が設けられ、
さらに前記回路基板の表面に前記枠体内側の面より突出
した前記中心導体の端部と前記半導体素子とを電気的に
接続する線路導体が形成されており、前記嵌着部に前記
枠体よりもヤング率が小さい金属緩衝材を介して前記枠
体に嵌着されていることを特徴とする。
According to a first aspect of the present invention, there is provided a package for housing a semiconductor element, the base having a mounting portion for mounting a semiconductor element on an upper main surface, and a base mounted on an outer peripheral portion of the upper main surface. And a cylindrical outer conductor and a central axis thereof, which are joined so as to surround the portion, and provided with a fitting portion formed of a through-hole or a cutout portion for fitting the holding member of the coaxial connector to the side portion. And a coaxial connector fitted to the fitting portion and comprising a central conductor disposed in the frame and an insulator interposed therebetween, wherein the holding member is provided inside and outside the frame. A through-hole through which the coaxial connector is inserted from the outside is formed, and a shelf portion provided with a circuit board on an upper surface is provided in a portion of the inner surface of the frame below the through-hole,
Further, a line conductor for electrically connecting an end of the central conductor protruding from a surface inside the frame body and the semiconductor element is formed on a surface of the circuit board, and the fitting portion is provided with a line conductor from the frame body. Also, it is characterized in that it is fitted to the frame via a metal buffer having a small Young's modulus.

【0018】本発明は、上記の構成により、枠体よりも
ヤング率が小さい金属緩衝材を介して保持部材が枠体に
嵌着されることから、半導体パッケージをネジ止め等に
より外部回路基板等に装着する際の枠体に加わる歪み
が、金属緩衝材が枠体よりも大きく歪むことにより吸収
され、保持部材に設けられた同軸コネクタと回路基板に
不要な応力および歪みが伝わることを防止できる。
According to the present invention, since the holding member is fitted to the frame via a metal buffer having a Young's modulus smaller than that of the frame, the semiconductor package can be screwed to the external circuit board or the like. Distortion applied to the frame when it is mounted on the frame is absorbed by the metal buffer being more distorted than the frame, and unnecessary stress and distortion can be prevented from being transmitted to the coaxial connector and the circuit board provided on the holding member. .

【0019】従来基体上に載置固定されていて、基体の
貫通孔をネジ止めし外部電気回路に装着する際にクラッ
クが入り高周波信号の伝送線路を寸断させていた回路基
板は、保持部材の棚部上に設置固定されることとなり、
回路基板にはほとんど歪みが加わらない状態になり、回
路基板のクラック発生を防止できる。また、従来枠体の
側面に直接挿着されていた同軸コネクタも保持部材に挿
着されることとなり、半導体パッケージ製造時の中心導
体と線路導体の位置ずれの低減と、半導体パッケージを
外部回路基板に実装する際の同軸コネクタに伝わる応力
の低減が可能となる。中心導体と線路導体の位置ずれを
低減させることで、中心導体と線路導体の接続部におけ
る高周波信号の伝送特性を向上させ得、同軸コネクタに
伝わる応力を低減させることで、同軸コネクタの絶縁体
のクラックを防止することができる。同時に同軸コネク
タに伝わる歪みを防止し、同軸コネクタの位置ずれが無
くなり、中心導体が線路導体から外れるのを防止でき
る。
Conventionally, a circuit board which is mounted and fixed on a base and cracks into a transmission line of a high-frequency signal when a through-hole of the base is screwed and mounted on an external electric circuit is cut off. It will be fixed on the shelf,
As a result, almost no distortion is applied to the circuit board, and the occurrence of cracks in the circuit board can be prevented. In addition, the coaxial connector, which was conventionally directly inserted into the side surface of the frame, is also inserted into the holding member, thereby reducing the displacement between the center conductor and the line conductor during the manufacture of the semiconductor package, and connecting the semiconductor package to the external circuit board. It is possible to reduce the stress transmitted to the coaxial connector when mounting on a coaxial connector. By reducing the displacement between the center conductor and the line conductor, the transmission characteristics of the high-frequency signal at the connection between the center conductor and the line conductor can be improved, and by reducing the stress transmitted to the coaxial connector, the insulation of the coaxial connector can be reduced. Cracks can be prevented. At the same time, the distortion transmitted to the coaxial connector is prevented, the positional displacement of the coaxial connector is eliminated, and the center conductor can be prevented from coming off the line conductor.

【0020】本発明において、好ましくは、前記保持部
材の前記枠体内側の面が前記金属緩衝材の前記枠体内側
の面より前記枠体内側に突出していることを特徴とす
る。
In the present invention, preferably, the inner surface of the holding member protrudes inward of the frame from the inner surface of the metal cushioning material.

【0021】この構成により、枠体に金属緩衝材および
保持部材をろう付けにより接合する際、枠体と金属緩衝
材間および金属緩衝材と保持部材間をろう付けするため
のろう材が保持部材の枠体内側の面に流れ出て保持部材
の棚部に不要なろう材が溜まることを防止できる。棚部
に不要なろう材が溜まるのを防ぐことにより、棚部に回
路基板が傾いて設置固定されることを防止し得る。
With this configuration, when the metal cushioning material and the holding member are joined to the frame by brazing, the brazing material for brazing between the frame and the metal cushioning material and between the metal cushioning material and the holding member is formed. Unnecessary brazing material can be prevented from flowing out to the inner surface of the frame and accumulating on the shelf of the holding member. By preventing unnecessary brazing material from accumulating on the shelf, it is possible to prevent the circuit board from being inclined and fixed on the shelf.

【0022】また本発明は、好ましくは、前記金属緩衝
材の厚みをW、前記保持部材の幅をdとした場合、d≧
3mmの場合にd/10≦W≦d/2であり、またはd
<3mmの場合に0.3mm≦W≦d/2であることを
特徴とする。
In the present invention, preferably, when the thickness of the metal cushioning material is W and the width of the holding member is d, d ≧ g
In the case of 3 mm, d / 10 ≦ W ≦ d / 2, or d
When <3 mm, 0.3 mm ≦ W ≦ d / 2.

【0023】この構成により、枠体から保持部材に伝わ
ろうとする歪みを金属緩衝材で有効に吸収し、保持部材
にほとんど歪みや応力が伝わらない状態となり、回路基
板のクラック発生、同軸コネクタの位置ずれおよび絶縁
体のクラック発生を有効に防止できる。
With this configuration, the metal buffer material effectively absorbs the strain that is going to be transmitted from the frame to the holding member, and almost no distortion or stress is transmitted to the holding member. Deviation and cracks in the insulator can be effectively prevented.

【0024】[0024]

【発明の実施の形態】本発明の半導体パッケージについ
て以下に詳細に説明する。図1は本発明の半導体パッケ
ージについて実施の形態の一例を示す断面図であり、1
は基体、2は枠体、3は同軸コネクタ、6は回路基板、
11は保持部材、12は金属緩衝材である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor package of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor package of the present invention.
Is a base, 2 is a frame, 3 is a coaxial connector, 6 is a circuit board,
11 is a holding member, and 12 is a metal buffer.

【0025】基体1は鉄−ニッケル−コバルト合金や銅
−タングステンの焼結材等から成り、そのインゴットに
圧延加工や打ち抜き加工等の従来周知の金属加工法を施
すか、または射出成形と切削加工を施すことによって所
定の形状に製作される。その上側主面の略中央部には、
IC、LSI、半導体レーザ(LD)、フォトダイオー
ド(PD)等の半導体素子5を載置するための載置部1
aが形成されており、載置部1aには半導体素子5が半
田等の接合材により載置固定される。半導体素子5は、
その電極が回路基板6に被着形成されている線路導体6
aにボンディングワイヤ7等を介して電気的に接続され
ている。
The substrate 1 is made of a sintered material of iron-nickel-cobalt alloy or copper-tungsten or the like. To produce a predetermined shape. At the approximate center of the upper main surface,
A mounting section 1 for mounting a semiconductor element 5 such as an IC, LSI, semiconductor laser (LD), photodiode (PD), etc.
The semiconductor element 5 is mounted and fixed on the mounting portion 1a with a bonding material such as solder. The semiconductor element 5
The line conductor 6 whose electrode is formed on the circuit board 6
a is electrically connected via a bonding wire 7 or the like.

【0026】また、基体1の上側主面の外周部には載置
部1aを囲繞するようにして枠体2が接合され立設され
ており、枠体2は基体1とともにその内側に半導体素子
5を収容する容器を形成する。
A frame 2 is joined and erected on the outer peripheral portion of the upper main surface of the base 1 so as to surround the mounting portion 1a. 5 is formed.

【0027】枠体2は基体1と同様に鉄−ニッケル−コ
バルト合金や銅−タングステンの焼結材等から成り、基
体1と一体成形されることによって、あるいは基体1に
銀ろう等のろう材を介してろう付けされたり、シーム溶
接法等の溶接法により接合されることによって基体1の
上側主面の外周部に立設される。
The frame 2 is made of a sintered material of iron-nickel-cobalt alloy or copper-tungsten as in the case of the base 1, and is formed integrally with the base 1, or the base 1 is made of a brazing material such as silver brazing. The base 1 is erected on the outer peripheral portion of the upper main surface of the base 1 by brazing or joining by a welding method such as a seam welding method.

【0028】枠体2の側面には保持部材11が嵌着され
る嵌着部2aが形成されている。嵌着部2aは、枠体2
内外を貫通する貫通孔であったり、枠体2の基体1との
接合面側から逆U字型に切り欠かれて枠体2内外を貫通
する切り欠きであったり、枠体2の蓋体4との接合面側
からU字型に切り欠かれて枠体2内外を貫通する切り欠
きであっても良い。
A fitting portion 2a to which the holding member 11 is fitted is formed on the side surface of the frame 2. The fitting portion 2a is connected to the frame 2
It may be a through hole penetrating inside and outside, or a notch cut out in an inverted U shape from the joint surface side of the frame 2 with the base 1 to penetrate the inside and outside of the frame 2, a lid of the frame 2 It may be a notch that is cut out in a U-shape from the joining surface side with the frame 4 and penetrates the inside and outside of the frame 2.

【0029】嵌着部2a内には鉄−ニッケル−コバルト
合金等の金属からなる保持部材11が挿入されるととも
に、保持部材11の外周面と嵌着部2aの内周面との間
に枠体2よりもヤング率の小さい金属緩衝材12が嵌合
され、金属緩衝材12と枠体2間および保持部材11と
金属緩衝材12間を、銀ろう等のろう材を介してろう付
けすることによって気密に接合される。
A holding member 11 made of a metal such as an iron-nickel-cobalt alloy is inserted into the fitting portion 2a, and a frame is provided between the outer peripheral surface of the holding member 11 and the inner peripheral surface of the fitting portion 2a. A metal buffer material 12 having a Young's modulus smaller than that of the body 2 is fitted, and brazing is performed between the metal buffer material 12 and the frame 2 and between the holding member 11 and the metal buffer material 12 via a brazing material such as silver brazing. It is airtightly joined by.

【0030】金属緩衝材12は、枠体2を形成する鉄−
ニッケル−コバルト合金(ヤング率は約137GP
a)、銅−タングステンの焼結材(ヤング率は225〜
314GPa)等よりも軟らかい銅(ヤング率は約11
7GPa)、銀(ヤング率は約86GPa)等から形成
されている。金属緩衝材12を嵌着部2aに嵌合させる
ことによって、枠体2から保持部材11に伝達しようと
する応力や歪みが、金属緩衝材12が枠体2に比べ大き
く歪んで吸収されることとなり、保持部材11には歪み
や応力がほとんど加わらない状態となる。このような点
から、金属緩衝材12の材料は、枠体2のヤング率の
0.9倍以下の材料を選択するのが良い。
The metal buffer 12 is made of iron which forms the frame 2.
Nickel-cobalt alloy (Young's modulus is about 137GP
a), copper-tungsten sintered material (Young's modulus is 225 to
Copper (314 GPa) or the like (Young's modulus is about 11
7 GPa), silver (Young's modulus is about 86 GPa) and the like. By fitting the metal cushioning material 12 to the fitting portion 2a, the stress and strain to be transmitted from the frame 2 to the holding member 11 are absorbed by the metal cushioning material 12 being distorted more greatly than the frame 2. Thus, the holding member 11 is hardly distorted or stressed. From such a point, it is preferable that the material of the metal cushioning material 12 is selected to be 0.9 times or less of the Young's modulus of the frame 2.

【0031】同軸コネクタ3は、内部に収容する半導体
素子5を外部の同軸ケーブル10に電気的に接続するも
のであり、鉄−ニッケル−コバルト合金等の金属から成
る円筒状の外周導体3aの中心軸に同じく鉄−ニッケル
−コバルト合金等の金属から成る中心導体3bが絶縁体
3cを介して固定された構造をしている。
The coaxial connector 3 is for electrically connecting the semiconductor element 5 housed therein to an external coaxial cable 10, and has a center of a cylindrical outer conductor 3a made of metal such as iron-nickel-cobalt alloy. A central conductor 3b also made of a metal such as an iron-nickel-cobalt alloy is fixed to the shaft via an insulator 3c.

【0032】保持部材11には、回路基板6を上面に設
置するための棚部11aと、同軸コネクタ3を挿入する
ための貫通孔11bが設けられている。棚部11aには
半田等の接合材6dを載置し、接合材6dの上に線路導
体6aと接地導体6cとを具備した回路基板6を接地導
体6c面が接合材6d側になるようにして設置する。貫
通孔11bは、枠体2の内外を貫通するように形成さ
れ、同軸コネクタ3を挿入するとともに外周導体3aと
の間に半田等の封着材8を挿入する。中心導体3bの先
端部は回路基板6の上面に突出させてあり、中心導体3
bの先端部と線路導体6aの上面との間に半田等の導電
性接着材6bを介在させ、中心導体3bの先端部と線路
導体6aの上面とが接続される。
The holding member 11 is provided with a shelf 11a for mounting the circuit board 6 on the upper surface and a through hole 11b for inserting the coaxial connector 3. A bonding material 6d such as solder is placed on the shelf 11a, and the circuit board 6 including the line conductor 6a and the ground conductor 6c is placed on the bonding material 6d such that the surface of the ground conductor 6c is on the bonding material 6d side. And install it. The through hole 11b is formed so as to penetrate the inside and outside of the frame 2, inserts the coaxial connector 3, and also inserts the sealing material 8 such as solder between the outer conductor 3a and the coaxial connector 3. The tip of the center conductor 3b is projected from the upper surface of the circuit board 6, and the center conductor 3b
A conductive adhesive 6b such as solder is interposed between the tip of the line conductor b and the upper surface of the line conductor 6a, and the end of the center conductor 3b is connected to the upper surface of the line conductor 6a.

【0033】絶縁体3cを有する同軸コネクタ3とアル
ミナ質セラミックス等の絶縁体からなる回路基板6が、
保持部材11に半田付け等によって接合される際に、同
軸コネクタ3、回路基板6および保持部材11に熱が加
わり、それぞれ熱膨張が起きる。これらの熱膨張係数差
により、絶縁体3cと回路基板6のそれぞれに応力が加
わりクラックが入り易くなる。熱膨張による応力を抑え
るために、保持部材11は、絶縁体例えばアルミナ質セ
ラミックス(線膨張係数は約7.0×10-6/℃)と熱
膨張係数の近い鉄−ニッケル−コバルト合金(線膨張係
数は約5.7×10-6〜6.45×10-6/℃)や銅−
タングステンの焼結材(線膨張係数は約6.4×10-6
〜8.5×10-6/℃)から成るのが好ましい。
A coaxial connector 3 having an insulator 3c and a circuit board 6 made of an insulator such as alumina ceramic are used.
When joined to the holding member 11 by soldering or the like, heat is applied to the coaxial connector 3, the circuit board 6, and the holding member 11, and thermal expansion occurs respectively. Due to the difference between these coefficients of thermal expansion, stress is applied to each of the insulator 3c and the circuit board 6, and cracks are easily formed. In order to suppress the stress due to thermal expansion, the holding member 11 is made of an insulating material such as an alumina ceramic (having a linear expansion coefficient of about 7.0 × 10 −6 / ° C.) and an iron-nickel-cobalt alloy (line The expansion coefficient is about 5.7 × 10 -6 to 6.45 × 10 -6 / ° C.
Tungsten sintered material (linear expansion coefficient is about 6.4 × 10 -6
~ 8.5 × 10 -6 / ° C).

【0034】しかる後、加熱して接合材6dと封着材8
および導電性接着材6bを溶融させ、接合材6dにより
回路基板6が棚部11aに強固に固定され、溶融した封
着材8は毛細管現象により外周導体3aと貫通孔11b
の内壁との隙間に充填されることによって、外周導体3
aが貫通孔11b内に半田等の封着材8を介して挿着さ
れ、導電性接着材6bにより中心導体3bと線路導体6
aとが接続される。
Thereafter, the bonding material 6d and the sealing material 8 are heated by heating.
And the conductive adhesive 6b is melted, and the circuit board 6 is firmly fixed to the shelf 11a by the bonding material 6d, and the melted sealing material 8 is formed into the outer conductor 3a and the through hole 11b by capillary action.
Is filled in the gap with the inner wall of the outer conductor 3.
a is inserted into the through hole 11b via a sealing material 8 such as solder, and the center conductor 3b and the line conductor 6 are connected by the conductive adhesive 6b.
a is connected.

【0035】かくして、グランドとしての外周導体3a
が保持部材11に封着材8を介して保持部材11に電気
的に接続され、また中心導体3bが回路基板6の線路導
体6aに半田等から成る導電性接着材6bを介して電気
的に接続される。
Thus, the outer conductor 3a as a ground
Are electrically connected to the holding member 11 via the sealing material 8 and the center conductor 3b is electrically connected to the line conductor 6a of the circuit board 6 via the conductive adhesive 6b made of solder or the like. Connected.

【0036】中心導体3bを伝送する高周波信号は、貫
通孔11b,11c部において貫通孔11b,11cの
中心軸を伝送する同軸線路を伝送し、保持部材11の枠
体2内側の面から出て、半田等の導電性接着材6bに達
した後は、マイクロストリップ線路となっている線路導
体6a上を伝送する。この同軸線路とマイクロストリッ
プ線路は、所定の特性インピーダンス値に整合されてい
る。導電性接着材6bによる接続部において、中心導体
3bの先端部の位置、線路導体6aの位置、および導電
性接着材6bの量により、信号線路のインピーダンスが
所定の値に設定されている。このようにして、半導体パ
ッケージ内において、反射損失や透過損失等の伝送損失
のない良好な信号線路が形成される。
The high-frequency signal transmitted through the central conductor 3b is transmitted through a coaxial line transmitting the central axes of the through holes 11b and 11c at the through holes 11b and 11c, and exits from the inner surface of the holding member 11 inside the frame 2. After reaching the conductive adhesive material 6b such as solder, the light is transmitted on the line conductor 6a which is a microstrip line. The coaxial line and the microstrip line are matched to a predetermined characteristic impedance value. In the connection portion using the conductive adhesive 6b, the impedance of the signal line is set to a predetermined value depending on the position of the tip of the center conductor 3b, the position of the line conductor 6a, and the amount of the conductive adhesive 6b. In this way, a good signal line without transmission loss such as reflection loss and transmission loss is formed in the semiconductor package.

【0037】保持部材11の貫通孔11c内に挿入固定
される同軸コネクタプラグ9は、外部電気回路に接続さ
れた同軸ケーブル10と保持部材11に挿着された同軸
コネクタ3とを接続するためのプラグであり、その外周
面はネジ状となっており、内周面にネジ切りを有する貫
通孔11cにネジ止めされる。
The coaxial connector plug 9 inserted and fixed in the through hole 11c of the holding member 11 connects the coaxial cable 10 connected to an external electric circuit to the coaxial connector 3 inserted into the holding member 11. It is a plug, the outer peripheral surface of which is screw-shaped, and is screwed into a through hole 11c having a threaded inner peripheral surface.

【0038】そして、本発明の半導体パッケージは、半
導体素子5の電極と回路基板6の上面に被着された線路
導体6aとをボンディングワイヤ7により電気的に接続
し、しかる後、枠体2の上面に鉄−ニッケル−コバルト
合金等の金属から成る蓋体4を半田付け法やシームウエ
ルド法により接合することにより製品としての半導体装
置となる。
In the semiconductor package of the present invention, the electrodes of the semiconductor element 5 and the line conductors 6a attached to the upper surface of the circuit board 6 are electrically connected by bonding wires 7, and then the frame 2 A semiconductor device as a product is obtained by joining a lid 4 made of a metal such as an iron-nickel-cobalt alloy to the upper surface by a soldering method or a seam welding method.

【0039】この半導体装置は、基体1に設けられた貫
通孔1bをネジ止めすることにより、外部回路基板に実
装される。また、同軸コネクタプラグ9と外部電気回路
に接続された同軸ケーブル10とを接続することによ
り、内部に収容する半導体素子5が外部電気回路に電気
的に接続され、半導体素子5が高周波信号で作動するこ
ととなる。
This semiconductor device is mounted on an external circuit board by screwing a through hole 1b provided in the base 1. Further, by connecting the coaxial connector plug 9 and the coaxial cable 10 connected to the external electric circuit, the semiconductor element 5 housed inside is electrically connected to the external electric circuit, and the semiconductor element 5 operates by a high frequency signal. Will be done.

【0040】貫通孔1bを外部回路基板にネジ止めして
外部回路基板に実装する際、半導体パッケージ製造時の
ろう付け工程において反りが生じていた基体1の反りが
矯正され、基体1および枠体2に歪みが加わることとな
る。
When the through-hole 1b is screwed to the external circuit board and mounted on the external circuit board, the warpage of the base 1, which has been warped in the brazing step in the manufacture of a semiconductor package, is corrected, and the base 1 and the frame are formed. 2 is distorted.

【0041】本発明の半導体パッケージにおいては、同
軸コネクタ3および回路基板6が保持部材11を介して
枠体2に設けられていて、枠体2の嵌着部2aと保持部
材11の外周面との間に金属緩衝材12が嵌合されてい
る。枠体2に歪みが加わった場合においても、枠体2か
ら保持部材11に伝わろうとする歪みは、金属緩衝材1
2が枠体2に比べ軟らかく歪み易い材質から形成されて
いるために、金属緩衝材12が枠体2に比べ大きく歪ん
で、歪みを吸収することとなり、保持部材11には歪み
や応力がほとんど加わらない状態となる。
In the semiconductor package of the present invention, the coaxial connector 3 and the circuit board 6 are provided on the frame 2 via the holding member 11, and the fitting portion 2a of the frame 2 and the outer peripheral surface of the holding member 11 The metal cushioning material 12 is fitted between them. Even when distortion is applied to the frame 2, the distortion that is transmitted from the frame 2 to the holding member 11 is reduced by the metal cushioning material 1.
2 is made of a material that is softer and more easily distorted than the frame 2, the metal cushioning material 12 is greatly distorted compared to the frame 2, and absorbs the distortion. It will not be added.

【0042】従来枠体2の側面に設けられた貫通孔に挿
着されていた同軸コネクタ3は、保持部材11の貫通孔
11bに挿着され、また従来基体1の上側主面の載置部
1aに載置されていた回路基板6は、保持部材11の棚
部11aに設置され、同軸コネクタ3と回路基板6はと
もに保持部材11に設けられることとなる。したがっ
て、枠体2と基体1の接合位置がずれることによる同軸
コネクタ3と回路基板6の位置ずれが解消され、同軸コ
ネクタ3の中心導体3bと回路基板6の線路導体6aと
の接続部の位置を安定させることができる。
The coaxial connector 3 conventionally inserted into the through hole provided on the side surface of the frame 2 is inserted into the through hole 11b of the holding member 11, and the mounting portion on the upper main surface of the conventional base 1 The circuit board 6 placed on 1a is set on the shelf 11a of the holding member 11, and the coaxial connector 3 and the circuit board 6 are both provided on the holding member 11. Accordingly, the displacement between the coaxial connector 3 and the circuit board 6 due to the displacement of the joint between the frame 2 and the base 1 is eliminated, and the position of the connection between the center conductor 3b of the coaxial connector 3 and the line conductor 6a of the circuit board 6 is eliminated. Can be stabilized.

【0043】本発明において好ましくは、図2に示すよ
うに、保持部材11の枠体2内側の面を金属緩衝材12
の枠体2内側の面より枠体2内側に突出させる。この構
成により、枠体2に金属緩衝材12および保持部材11
をろう付けにより接合する際、枠体2と金属緩衝材12
間および金属緩衝材12と保持部材11間をろう付けす
るためのろう材が、保持部材11の枠体2内側の面に流
れ出て、自重によって保持部材11に設けられた棚部1
1aに流れ込むことを防止できる。この場合、保持部材
11の枠体2内側の面を金属緩衝材12の枠体2内側の
面から0.1mm以上突出させればよく、ろう材の棚部
11aへの流れ込み防止に有効である。
In the present invention, preferably, as shown in FIG.
From the inner surface of the frame 2. With this configuration, the metal cushioning material 12 and the holding member 11
When joining the frame 2 and the metal cushioning material 12
The brazing material for brazing between the metal cushioning material 12 and the holding member 11 flows out onto the inner surface of the frame 2 of the holding member 11, and the shelf 1 provided on the holding member 11 by its own weight.
1a can be prevented from flowing. In this case, the surface of the holding member 11 inside the frame 2 may be made to protrude from the surface of the metal cushioning material 12 inside the frame 2 by 0.1 mm or more, which is effective in preventing the brazing material from flowing into the shelf 11a. .

【0044】また、図3のように、金属緩衝材12の厚
みをWとし、保持部材11の幅をdとしたとき、d≧3
mmの場合にd/10≦W≦d/2とするのがよい。W
<d/10の場合、金属緩衝材12の厚みWが小さすぎ
て緩衝機能が十分作用せず、半導体パッケージを外部回
路基板に実装する際、枠体2から保持部材11に加わる
歪みを金属緩衝材12にて有効に吸収することが困難と
なる。また、W>d/2の場合、保持部材11と金属緩
衝材12のろう付け時の熱膨張係数差による歪みや応力
が大きくなり、保持部材11に歪みや応力が加わって、
同軸コネクタ3の絶縁体3cと回路基板6に応力が作用
してクラックが入り易くなる。
As shown in FIG. 3, when the thickness of the metal cushioning material 12 is W and the width of the holding member 11 is d, d ≧ 3.
In the case of mm, it is preferable that d / 10 ≦ W ≦ d / 2. W
In the case of <d / 10, the thickness W of the metal cushioning material 12 is too small and the cushioning function does not work sufficiently, and when the semiconductor package is mounted on the external circuit board, the strain applied from the frame 2 to the holding member 11 is reduced by the metal cushioning. It becomes difficult to effectively absorb the material 12. In the case of W> d / 2, distortion and stress due to a difference in thermal expansion coefficient during brazing of the holding member 11 and the metal cushioning material 12 increase, and distortion and stress are applied to the holding member 11,
Stress acts on the insulator 3c of the coaxial connector 3 and the circuit board 6, and cracks easily occur.

【0045】また、金属緩衝材12は、銅,銀等の金属
に切削加工等の機械加工を施すことによって形成される
ものであるから、d<3mmであってW<0.3mmの
場合、機械加工の最小限界値を超えてしまい加工がきわ
めて困難となる。したがって、d<3mmである場合は
0.3mm≦W≦d/2であるのがよい。
The metal buffer 12 is formed by subjecting a metal such as copper or silver to machining such as cutting, so that when d <3 mm and W <0.3 mm, Exceeding the minimum limit of machining makes machining extremely difficult. Therefore, when d <3 mm, it is preferable that 0.3 mm ≦ W ≦ d / 2.

【0046】本発明の半導体素子収納用パッケージは、
周波数が5〜50GHz程度の高周波信号の伝送特性を
良好なものとすることができる。
The semiconductor device housing package of the present invention
Transmission characteristics of a high-frequency signal having a frequency of about 5 to 50 GHz can be improved.

【0047】なお、本発明は上記実施の形態に限定され
るものではなく、本発明の要旨を逸脱しない範囲内であ
れば種々の変更は何等差し支えない。
The present invention is not limited to the above-described embodiment, and various changes may be made without departing from the scope of the present invention.

【0048】[0048]

【発明の効果】本発明は、同軸コネクタの保持部材は、
枠体内外を貫通するとともに外側より同軸コネクタを挿
着する貫通孔が形成され、かつ枠体内側の面の貫通孔の
下方の部位に回路基板を上面に設置した棚部が設けら
れ、さらに回路基板の表面に枠体内側の面より突出した
中心導体の端部と半導体素子とを電気的に接続する線路
導体が形成されており、嵌着部に枠体よりもヤング率が
小さい金属緩衝材を介して枠体に嵌着されていることに
より、保持部材と枠体の間には金属緩衝材が嵌合されて
いることから、半導体パッケージをネジ止め等によって
外部回路基板等に装着する際の枠体に加わる歪みが枠体
から保持部材に伝わろうとする際、金属緩衝材が枠体に
比べ大きく歪んで、枠体から保持部材に伝わろうとする
歪みを吸収し、保持部材には歪みや応力がほとんど加わ
らない状態となる。従って、保持部材の棚部上に設置固
定される回路基板と保持部材に挿着される同軸コネクタ
にはほとんど歪みが加わらない状態となり、回路基板の
クラックを有効に防止できるとともに同軸コネクタの絶
縁体のクラックを防止することができる。
According to the present invention, the holding member of the coaxial connector is:
A through hole that penetrates the inside and outside of the frame and through which the coaxial connector is inserted from the outside is formed, and a shelf portion on the upper surface of the circuit board is provided at a portion of the inner surface of the frame below the through hole, and further a circuit is provided. A line conductor that electrically connects the end of the center conductor protruding from the inner surface of the frame to the semiconductor element is formed on the surface of the substrate, and a metal buffer material having a smaller Young's modulus than the frame at the fitting portion. When the semiconductor package is mounted on an external circuit board or the like by screwing or the like, since the metal cushioning material is fitted between the holding member and the frame by being fitted to the frame via When the strain applied to the frame body is to be transmitted from the frame body to the holding member, the metal buffer material is greatly distorted compared to the frame body, and absorbs the distortion that is going to be transmitted from the frame body to the holding member. A state where almost no stress is applied is obtained. Accordingly, the circuit board installed and fixed on the shelf of the holding member and the coaxial connector inserted into the holding member are hardly distorted, so that cracks in the circuit board can be effectively prevented and the insulator of the coaxial connector can be prevented. Cracks can be prevented.

【0049】回路基板のクラック防止により、回路基板
の上面に形成した線路導体の断線が防止され、高周波信
号を効率良く伝送させることが可能となり、同軸コネク
タの絶縁体のクラックを防止することにより、半導体パ
ッケージ内を気密に保つことと、中心導体を伝送する高
周波信号の同軸線路のモードを保つことが可能となり、
高周波信号を効率良く伝送させることができる。
By preventing cracks in the circuit board, breakage of the line conductor formed on the upper surface of the circuit board can be prevented, high-frequency signals can be transmitted efficiently, and cracks in the insulator of the coaxial connector can be prevented. It is possible to keep the inside of the semiconductor package airtight and to maintain the mode of the coaxial line of the high-frequency signal transmitted through the center conductor,
High-frequency signals can be transmitted efficiently.

【0050】また、同軸コネクタと回路基板が保持部材
に設けられることから、半導体パッケージ製造の際に中
心導体と線路導体の位置ずれを従来よりも低減させるこ
とが可能となり、中心導体と線路導体の接続部における
インピーダンスのばらつきを抑えることができ、高周波
信号の伝送特性が向上する。
Further, since the coaxial connector and the circuit board are provided on the holding member, it is possible to reduce the displacement between the center conductor and the line conductor during the manufacture of the semiconductor package as compared with the conventional case, and to reduce the displacement between the center conductor and the line conductor. Variation in impedance at the connection portion can be suppressed, and transmission characteristics of a high-frequency signal are improved.

【0051】外部回路基板に半導体素子収納用パッケー
ジを実装する際に、枠体に歪みが加わった場合において
も同軸コネクタ挿着部に伝わる歪みを有効に防止するこ
とになるため、同軸コネクタの位置ずれが無くなり、中
心導体が線路導体から外れることも有効に防止できる。
When the semiconductor element housing package is mounted on the external circuit board, even if the frame is distorted, the distortion transmitted to the coaxial connector insertion portion is effectively prevented. The displacement is eliminated, and the center conductor can be effectively prevented from coming off the line conductor.

【0052】このようにして、回路基板のクラック防
止、同軸コネクタの絶縁体のクラック防止、中心導体の
線路導体に対する位置ずれ防止、中心導体が線路導体か
ら外れることの防止を実現することとなる。その結果、
これらの効果によって、高周波信号の伝送効率に優れか
つ気密性に優れた半導体パッケージを提供できる。本発
明は、好ましくは、保持部材の枠体内側の面が金属緩衝
材の枠体内側の面より枠体内側に突出していることによ
り、枠体に金属緩衝材および保持部材をろう付けにより
接合する際、枠体と金属緩衝材間および金属緩衝材と保
持部材間をろう付けするためのろう材が保持部材の枠体
内側の面に流れ出て、保持部材の棚部に流れ込んで棚部
に余分なろう材が溜まることを防止する。その結果、棚
部上面と回路基板上面とが平行になるようにして回路基
板を設置でき、同軸コネクタの中心導体と回路基板の線
路導体との接続部の位置が安定する。保持部材の枠体内
側の面は、金属緩衝材の枠体内側の面より0.1mm以
上突出させると良く、棚部上面と回路基板上面との平行
度を0.2mm以下とすることができる。中心導体と線
路導体の接続部の位置を安定させることにより、接続部
におけるインピーダンスを安定させることとなり、良好
な高周波信号の伝送路を形成し得る。
In this way, it is possible to prevent cracks on the circuit board, cracks on the insulator of the coaxial connector, displacement of the center conductor with respect to the line conductor, and prevention of the center conductor coming off the line conductor. as a result,
By these effects, a semiconductor package having excellent high-frequency signal transmission efficiency and excellent airtightness can be provided. In the present invention, preferably, the metal buffer and the holding member are joined to the frame by brazing, since the inner surface of the holding member projects from the inner surface of the metal buffer to the inner side of the frame. In doing so, the brazing material for brazing between the frame and the metal cushioning material and between the metal cushioning material and the holding member flows out to the inner surface of the frame of the holding member, flows into the shelf of the holding member, and enters the shelf. Prevents accumulation of excess brazing material. As a result, the circuit board can be installed so that the upper surface of the shelf portion and the upper surface of the circuit board are parallel, and the position of the connection between the center conductor of the coaxial connector and the line conductor of the circuit board is stabilized. It is preferable that the inner surface of the holding member project from the inner surface of the metal cushioning material by 0.1 mm or more, and the parallelism between the upper surface of the shelf and the upper surface of the circuit board can be 0.2 mm or less. . By stabilizing the position of the connection between the center conductor and the line conductor, the impedance at the connection is stabilized, and a good transmission path for high-frequency signals can be formed.

【0053】また本発明は、好ましくは、金属緩衝材の
厚みをW、保持部材の幅をdとした場合、d≧3mmの
場合にd/10≦W≦d/2であり、またはd<3mm
の場合に0.3mm≦W≦d/2とすることにより、枠
体から保持部材に伝わろうとする歪みを金属緩衝材で有
効に吸収し、保持部材にほとんど歪みや応力が伝わらな
い状態となり、回路基板のクラック防止、同軸コネクタ
の絶縁体のクラック防止、中心導体の線路導体に対する
位置ずれ防止、中心導体が線路導体から外れることの防
止を、より確実に実現できる半導体パッケージとなる。
In the present invention, preferably, when the thickness of the metal cushioning material is W and the width of the holding member is d, d / 10 ≦ W ≦ d / 2 when d ≧ 3 mm, or d <d / 2. 3mm
In this case, by setting 0.3 mm ≦ W ≦ d / 2, the metal buffer material effectively absorbs the strain that is going to be transmitted from the frame to the holding member, so that almost no strain or stress is transmitted to the holding member. The semiconductor package can more reliably realize prevention of cracks in the circuit board, prevention of cracks in the insulator of the coaxial connector, prevention of displacement of the center conductor with respect to the line conductor, and prevention of the center conductor coming off the line conductor.

【0054】従って、本発明の半導体パッケージは、5
〜50GHz程度の高周波信号の伝送特性に優れかつ気
密性に優れたものとなる。
Therefore, the semiconductor package of the present invention
The transmission characteristics of high-frequency signals of about 50 GHz are excellent and the airtightness is excellent.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の半導体パッケージの一実施形態を示す
断面図である。
FIG. 1 is a sectional view showing one embodiment of a semiconductor package of the present invention.

【図2】本発明の半導体パッケージの他の実施形態を示
す断面図である。
FIG. 2 is a sectional view showing another embodiment of the semiconductor package of the present invention.

【図3】本発明の半導体パッケージの他の実施形態を示
す要部断面図である。
FIG. 3 is a sectional view of a main part showing another embodiment of the semiconductor package of the present invention.

【図4】従来の半導体パッケージの断面図である。FIG. 4 is a cross-sectional view of a conventional semiconductor package.

【符号の説明】[Explanation of symbols]

1:基体 1a:載置部 2:枠体 2a:嵌着部 3:同軸コネクタ 3a:外周導体 3b:中心導体 3c:絶縁体 5:半導体素子 6:回路基板 6a:線路導体 11:保持部材 11a:棚部 11b:挿着部 12:金属緩衝材 1: Base 1a: Placement section 2: Frame 2a: Fitting section 3: Coaxial connector 3a: Outer conductor 3b: Center conductor 3c: Insulator 5: Semiconductor element 6: Circuit board 6a: Line conductor 11: Holding member 11a : Shelf 11b: Insertion part 12: Metal cushioning material

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】上側主面に半導体素子を載置するための載
置部を有する基体と、前記上側主面の外周部に前記載置
部を囲繞するように接合され、かつ側部に同軸コネクタ
の保持部材を嵌着させる貫通孔または切り欠き部から成
る嵌着部が設けられた枠体と、筒状の外周導体およびそ
の中心軸に設置させた中心導体ならびにそれらの間に介
在させた絶縁体から成るとともに前記嵌着部に嵌着され
た同軸コネクタとを具備した半導体素子収納用パッケー
ジにおいて、 前記保持部材は、前記枠体内外を貫通するとともに外側
より前記同軸コネクタを挿着する貫通孔が形成され、か
つ前記枠体内側の面の前記貫通孔の下方の部位に回路基
板を上面に設置した棚部が設けられ、さらに前記回路基
板の表面に前記枠体内側の面より突出した前記中心導体
の端部と前記半導体素子とを電気的に接続する線路導体
が形成されており、前記嵌着部に前記枠体よりもヤング
率が小さい金属緩衝材を介して前記枠体に嵌着されてい
ることを特徴とする半導体素子収納用パッケージ。
A base having a mounting portion for mounting a semiconductor element on an upper main surface; and a peripheral portion of the upper main surface joined to surround the mounting portion and coaxial with a side portion. A frame provided with a fitting portion formed of a through-hole or a notch for fitting the holding member of the connector, a cylindrical outer conductor, a center conductor disposed on the center axis thereof, and a center conductor interposed therebetween; A semiconductor device housing package comprising an insulator and a coaxial connector fitted to the fitting portion, wherein the holding member penetrates inside and outside the frame and penetrates the coaxial connector from outside. A hole is formed, and a shelf portion provided with a circuit board on the upper surface is provided at a portion of the inner surface of the frame below the through hole, and further protrudes from the inner surface of the frame on the surface of the circuit board. End of the center conductor A line conductor for electrically connecting the portion and the semiconductor element is formed, and the line conductor is fitted to the frame via a metal buffer having a Young's modulus smaller than that of the frame at the fitting portion. A semiconductor device storage package characterized by the above-mentioned.
【請求項2】前記保持部材の前記枠体内側の面が前記金
属緩衝材の前記枠体内側の面より前記枠体内側に突出し
ていることを特徴とする請求項1記載の半導体素子収納
用パッケージ。
2. The semiconductor element storage device according to claim 1, wherein the inner surface of the holding member projects from the inner surface of the metal buffer to the inner side of the frame. package.
【請求項3】前記金属緩衝材の厚みをW、前記保持部材
の幅をdとした場合、d≧3mmの場合にd/10≦W
≦d/2であり、またはd<3mmの場合に0.3mm
≦W≦d/2であることを特徴とする請求項1または請
求項2の半導体素子収納用パッケージ。
3. When the thickness of the metal buffer is W and the width of the holding member is d, d / 10 ≦ W when d ≧ 3 mm.
≦ d / 2 or 0.3 mm if d <3 mm
3. The package for housing a semiconductor element according to claim 1, wherein ≤W≤d / 2.
JP2000362228A 2000-11-29 2000-11-29 Semiconductor element storing package Pending JP2002164453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000362228A JP2002164453A (en) 2000-11-29 2000-11-29 Semiconductor element storing package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000362228A JP2002164453A (en) 2000-11-29 2000-11-29 Semiconductor element storing package

Publications (1)

Publication Number Publication Date
JP2002164453A true JP2002164453A (en) 2002-06-07

Family

ID=18833543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000362228A Pending JP2002164453A (en) 2000-11-29 2000-11-29 Semiconductor element storing package

Country Status (1)

Country Link
JP (1) JP2002164453A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294418A (en) * 2007-04-26 2008-12-04 Kyocera Corp Package and electronic device
JP2009076843A (en) * 2007-08-30 2009-04-09 Kyocera Corp Substrate holding member and package, and electronic device
JP2009231796A (en) * 2008-02-26 2009-10-08 Kyocera Corp Package and electronic apparatus
JP2010171356A (en) * 2008-02-26 2010-08-05 Kyocera Corp Package for storing semiconductor element, and optical semiconductor device
JP2013140874A (en) * 2012-01-05 2013-07-18 Seiko Epson Corp Electronic device, ceramic substrate, manufacturing method, and piezoelectric oscillator

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294418A (en) * 2007-04-26 2008-12-04 Kyocera Corp Package and electronic device
JP2009076843A (en) * 2007-08-30 2009-04-09 Kyocera Corp Substrate holding member and package, and electronic device
JP2009231796A (en) * 2008-02-26 2009-10-08 Kyocera Corp Package and electronic apparatus
JP2010171356A (en) * 2008-02-26 2010-08-05 Kyocera Corp Package for storing semiconductor element, and optical semiconductor device
JP2013140874A (en) * 2012-01-05 2013-07-18 Seiko Epson Corp Electronic device, ceramic substrate, manufacturing method, and piezoelectric oscillator

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