JPH0521347B2 - - Google Patents

Info

Publication number
JPH0521347B2
JPH0521347B2 JP62058843A JP5884387A JPH0521347B2 JP H0521347 B2 JPH0521347 B2 JP H0521347B2 JP 62058843 A JP62058843 A JP 62058843A JP 5884387 A JP5884387 A JP 5884387A JP H0521347 B2 JPH0521347 B2 JP H0521347B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
electrode
layer
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62058843A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63226956A (ja
Inventor
Susumu Murakami
Teruyuki Kagami
Yasuki Nakano
Yoshitaka Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62058843A priority Critical patent/JPS63226956A/ja
Publication of JPS63226956A publication Critical patent/JPS63226956A/ja
Publication of JPH0521347B2 publication Critical patent/JPH0521347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP62058843A 1987-03-16 1987-03-16 半導体抵抗体 Granted JPS63226956A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62058843A JPS63226956A (ja) 1987-03-16 1987-03-16 半導体抵抗体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62058843A JPS63226956A (ja) 1987-03-16 1987-03-16 半導体抵抗体

Publications (2)

Publication Number Publication Date
JPS63226956A JPS63226956A (ja) 1988-09-21
JPH0521347B2 true JPH0521347B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-24

Family

ID=13095937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62058843A Granted JPS63226956A (ja) 1987-03-16 1987-03-16 半導体抵抗体

Country Status (1)

Country Link
JP (1) JPS63226956A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3344138B2 (ja) * 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor

Also Published As

Publication number Publication date
JPS63226956A (ja) 1988-09-21

Similar Documents

Publication Publication Date Title
US4908682A (en) Power MOSFET having a current sensing element of high accuracy
JPH0358185B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4660065A (en) Hall effect device with surface potential shielding layer
EP0415255B1 (en) Protection circuit for use in semiconductor integrated circuit device
JP2601143B2 (ja) 半導体装置
US5081514A (en) Protection circuit associated with input terminal of semiconductor device
KR910000229B1 (ko) 보호장치를 구비하고 있는 반도체집적회로와 그 제조방법
JPH0521347B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5753944A (en) Semiconductor integrated circuit
JP4795613B2 (ja) 半導体装置
EP0198468A2 (en) Protective device for integrated circuit
JP4029549B2 (ja) 半導体装置
JPH0580153B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5160990A (en) MIS-FET with small chip area and high strength against static electricity
JPS6290964A (ja) 集積回路保護構造
GB2212326A (en) Reduction of soft errors in semiconductor integrated circuit
JP2522350B2 (ja) 半導体集積回路の保護装置
JP2881907B2 (ja) 電力用半導体装置
JP2973450B2 (ja) 半導体装置
JPS6112691Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS604263A (ja) Ｍｏｓ電界効果半導体装置
KR0175396B1 (ko) 전류 감지 소자
JPH0110937Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0462875A (ja) 半導体装置
JPS6355871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)