JPH05211255A - Semiconductor device case - Google Patents
Semiconductor device caseInfo
- Publication number
- JPH05211255A JPH05211255A JP4008118A JP811892A JPH05211255A JP H05211255 A JPH05211255 A JP H05211255A JP 4008118 A JP4008118 A JP 4008118A JP 811892 A JP811892 A JP 811892A JP H05211255 A JPH05211255 A JP H05211255A
- Authority
- JP
- Japan
- Prior art keywords
- solder film
- heat sink
- case
- semiconductor device
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＩＣ，ＬＳＩ等の半導体
装置用ケースおよび半導体パッケージに関し、特に放熱
機能部分の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a case for a semiconductor device such as an IC and an LSI and a semiconductor package, and more particularly to the structure of a heat radiation function portion.
【０００２】[0002]
【従来の技術】従来、半導体装置用ケースや半導体パッ
ケージに放熱機能を付加する場合、セラミック製の半導
体装置用ケースとそれを用いた半導体パッケージではア
ルミニウム製の放熱器をケース内の半導体チップを実装
する板の実装面の反対側の面に接合した形態とするのが
一般的であり、又モールドパッケージでは、半導体チッ
プを実装するリードフレームの形状を通常よりも拡大し
てモールドよりはみ出させ、はみ出したリードフレーム
部分に別途放熱器を接合するか又は装置の筺体等に直接
接合した形態とするのが一般的であった。2. Description of the Related Art Conventionally, when a heat dissipation function is added to a semiconductor device case or a semiconductor package, a ceramic semiconductor device case and a semiconductor package using the same have an aluminum radiator mounted on a semiconductor chip inside the case. In general, the shape is such that it is bonded to the surface opposite to the mounting surface of the board to be mounted.In a molded package, the shape of the lead frame on which the semiconductor chip is mounted is made larger than usual to allow it to protrude from the mold In general, a radiator is separately joined to the lead frame portion or is directly joined to the housing of the device or the like.
【０００３】[0003]
【発明が解決しようとする課題】以上述べた従来の半導
体装置用ケースや半導体パッケージへ付加する放熱機能
部分の形態では半導体チップを半導体装置用ケースやリ
ードフレームへ実装して封止やモールディングを行った
後、さらに放熱器等を取り付ける必要が生じるため、製
造工程が長期化・複雑化し、コスト上昇や納期遅延の原
因となっていた。In the form of the heat dissipation function portion added to the conventional semiconductor device case or semiconductor package described above, the semiconductor chip is mounted on the semiconductor device case or lead frame for sealing or molding. After that, since it becomes necessary to attach a heat radiator etc., the manufacturing process becomes long and complicated, which causes cost increase and delivery delay.
【０００４】又、放熱器取り付け後の半導体パッケージ
の外形が放熱器の無い通常タイプの半導体パッケージと
比較してはるかに大きくなるため、装置実装に於ける寸
法上の制約要因となっていた。Further, since the outer shape of the semiconductor package after mounting the heat radiator is much larger than that of a normal type semiconductor package without the heat radiator, it has become a dimensional constraint factor in mounting the device.
【０００５】[0005]
【課題を解決するための手段】本発明によれば、ケース
の表面に金属膜を溶融付着したものを放熱機能部分の主
要部分とする半導体装置用ケースを得る。According to the present invention, a case for a semiconductor device is obtained in which a metal film melted and adhered to the surface of the case is a main part of a heat dissipation function part.
【０００６】[0006]
【実施例】次に本発明について図面を参照して説明す
る。The present invention will be described below with reference to the drawings.
【０００７】図１は本発明の第一の実施例の半導体装置
用ケースの中央部分の縦断面図であり、セラミック製の
ピングリッドアレイＩＣパッケージを適用対象としてい
る。即ち、本実施例は放熱器を接合して完成する形態の
通常のセラミックケース１を用いたＩＣパッケージに於
て、放熱器を接合する直前の状態のものに、図中の半田
膜８を表面上に溶融付着したものである。つまり、通常
であれば図中の銅タングステン板２の上部に放熱器を接
合するのであるが、本実施例ではその代用として半田膜
８を形成している。この構成によればＩＣチップ６で発
生した熱は銅タングステン板２を介して半田膜８に伝わ
るが、半田膜８は熱伝導度がセラミック等に比べてはる
かに良いため、半田膜８の全面に急速に伝わって空気中
へ放熱される。この放熱の能力は、半田膜８の面積の制
約や熱伝導度の制約から、通常のアルミニウム製放熱器
を接合した場合に比べては十分ではないが、全く半田膜
８を付加しない場合に比べればはるかに優れるので、弱
干のパワーオーバーとなった製品に対して有用である。FIG. 1 is a vertical sectional view of a central portion of a semiconductor device case according to a first embodiment of the present invention, which is applied to a ceramic pin grid array IC package. That is, this embodiment is an IC package using a normal ceramic case 1 in which a radiator is joined and completed, and the solder film 8 in the figure is provided on the surface immediately before the radiator is joined. It is melted and adhered on top. That is, a radiator is usually joined to the upper part of the copper tungsten plate 2 in the figure, but in this embodiment, the solder film 8 is formed as a substitute. According to this structure, the heat generated in the IC chip 6 is transferred to the solder film 8 through the copper tungsten plate 2, but the solder film 8 has far better thermal conductivity than ceramics or the like. Is rapidly transmitted to the air and is dissipated into the air. This heat dissipation ability is not sufficient as compared with the case where a normal aluminum radiator is joined due to the restriction of the area of the solder film 8 and the restriction of thermal conductivity, but it is better than the case where the solder film 8 is not added at all. It is much better and is useful for lightly dried and overpowered products.
【０００８】尚、半田膜８の面積や膜厚は必要に応じて
変更することができる。The area and the film thickness of the solder film 8 can be changed as required.
【０００９】図２は本発明の第二の実施例の半導体パッ
ケージの中央部分の縦断面図であり、図１に対して半田
膜８の形状を変化し、表面積を増加しており、放熱能力
の増大を図ったものである。FIG. 2 is a vertical sectional view of a central portion of a semiconductor package of a second embodiment of the present invention, in which the shape of the solder film 8 is changed and the surface area is increased as compared with FIG. Is intended to increase.
【００１０】図３は本発明の第三の実施例の半導体パッ
ケージの中央部分の縦断面図であり、図１の実施例に対
して半田膜８の面積を拡大し、放熱能力の増大を図った
ものである。FIG. 3 is a vertical cross-sectional view of a central portion of a semiconductor package of a third embodiment of the present invention. The area of the solder film 8 is enlarged as compared with the embodiment of FIG. It is a thing.
【００１１】図４は本発明の第四の実施例の半導体パッ
ケージの中央部分の縦断面図であり、本実施例では放熱
能力の一層の増加を図るため図３の実施例に対して半田
膜８の表面におうとつを設けている。FIG. 4 is a vertical cross-sectional view of a central portion of a semiconductor package according to a fourth embodiment of the present invention. In this embodiment, in order to further increase the heat dissipation capability, the solder film is different from the embodiment of FIG. There is a diaper on the surface of No. 8.
【００１２】図５は本発明の第５の実施例の半導体パッ
ケージの中央部分の縦断面図であり、本実施例では放熱
効果を高めるためにリードフレームアイランド１０の外
周部分をモールド樹脂１１の外側にはみ出させ、半田膜
８と接触する構造としている。FIG. 5 is a vertical cross-sectional view of a central portion of a semiconductor package according to a fifth embodiment of the present invention. In this embodiment, the outer peripheral portion of the lead frame island 10 is placed outside the molding resin 11 in order to enhance the heat radiation effect. It has a structure in which it protrudes and contacts the solder film 8.
【００１３】以上の実施例では金属膜の材質として半田
を使用しているが、その他の低融点金属を用いることも
可能である。In the above embodiments, solder is used as the material for the metal film, but other low melting point metals can be used.
【００１４】又以上の実施例の他にも様々な実施形態が
考えられることは明らかである。Obviously, various embodiments other than the above-described examples can be considered.
【００１５】[0015]
【発明の効果】以上説明したように、本発明は、放熱効
果を必要とする半導体装置用ケースを製造するに当って
半導体装置用ケース表面への放熱用金属被膜の形成をケ
ース製造時に予め行っておくことができるため、半導体
パッケージの製造工程から放熱器の取り付け作業を削減
でき、製造コストや工期を減少する効果がある。又本発
明による半導体パッケージは放熱用金属被膜が半導体装
置用ケースに密着して形成されることから、従来の放熱
器を取り付けた半導体パッケージと比べて高さが小さく
できるため装置実装上の寸法の制約がなくなり、装置の
小形化に貢献できる。As described above, according to the present invention, when manufacturing a case for a semiconductor device that requires a heat dissipation effect, a metal film for heat dissipation is formed on the surface of the case for a semiconductor device in advance at the time of manufacturing the case. Therefore, it is possible to reduce the work of mounting the radiator from the manufacturing process of the semiconductor package, and it is possible to reduce the manufacturing cost and the construction period. Further, in the semiconductor package according to the present invention, since the metal film for heat dissipation is formed in close contact with the semiconductor device case, the height can be made smaller than that of the conventional semiconductor package to which the heat radiator is attached. There are no restrictions and it can contribute to downsizing of the device.
【００１６】しかも、以上については既存の放熱器取り
付けタイプの半導体装置用ケースをそのまま流用するこ
とが可能なため、新規に本発明を実施するための専用ケ
ースを開発する必要がなく、本発明実施のために特別な
開発コストを必要としない。さらにセラミックタイプの
半導体パッケージだけでなく、モールドタイプの半導体
パッケージに対しても容易に実施でき、優れた放熱効果
を持たせることが可能となる。In addition, as for the above, since the existing case for the semiconductor device of the radiator mounting type can be used as it is, it is not necessary to newly develop a special case for carrying out the present invention, and the present invention can be carried out. Does not require any special development cost. Further, not only the ceramic type semiconductor package but also the mold type semiconductor package can be easily implemented, and an excellent heat dissipation effect can be provided.
【図１】本発明の第一の実施例の中央部分の縦断面図。FIG. 1 is a vertical sectional view of a central portion of a first embodiment of the present invention.
【図２】本発明の第二の実施例の中央部分の縦断面図。FIG. 2 is a vertical sectional view of a central portion of a second embodiment of the present invention.
【図３】本発明の第三の実施例の中央部分の縦断面図。FIG. 3 is a vertical sectional view of a central portion of a third embodiment of the present invention.
【図４】本発明の第四の実施例の中央部分の縦断面図。FIG. 4 is a vertical sectional view of a central portion of a fourth embodiment of the present invention.
【図５】本発明の第五の実施例の中央部分の縦断面図。FIG. 5 is a longitudinal sectional view of a central portion of a fifth embodiment of the present invention.
１ セラミックケース ２ 銅タングステン板 ３ セラミックキャップ ４ 端子 ６ ＩＣチップ ７ ボンディングワイヤ ８ 半田膜 ９ リードフレーム端子 １０ リードフレームアイランド １１ モールド樹脂 1 Ceramic Case 2 Copper Tungsten Plate 3 Ceramic Cap 4 Terminal 6 IC Chip 7 Bonding Wire 8 Solder Film 9 Lead Frame Terminal 10 Lead Frame Island 11 Mold Resin
Claims (1)
溶融付着した金属膜を主要な構成要素とする放熱機能部
分を有する半導体装置用ケース。1. A semiconductor device case having a heat dissipation function part, whose main component is a metal film melted and adhered to the surface of the semiconductor device case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4008118A JPH05211255A (en) | 1992-01-21 | 1992-01-21 | Semiconductor device case |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4008118A JPH05211255A (en) | 1992-01-21 | 1992-01-21 | Semiconductor device case |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05211255A true JPH05211255A (en) | 1993-08-20 |
Family
ID=11684372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4008118A Withdrawn JPH05211255A (en) | 1992-01-21 | 1992-01-21 | Semiconductor device case |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05211255A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11170726B2 (en) | 2009-12-18 | 2021-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
-
1992
- 1992-01-21 JP JP4008118A patent/JPH05211255A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11170726B2 (en) | 2009-12-18 | 2021-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990408 |