JPH05211185A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH05211185A JPH05211185A JP29533191A JP29533191A JPH05211185A JP H05211185 A JPH05211185 A JP H05211185A JP 29533191 A JP29533191 A JP 29533191A JP 29533191 A JP29533191 A JP 29533191A JP H05211185 A JPH05211185 A JP H05211185A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- pot
- cavity
- thermosetting resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特に熱硬化性樹脂を用いた封入方法を含む半導体
装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device including an encapsulation method using a thermosetting resin.
【0002】[0002]
【従来の技術】従来、樹脂封止半導体装置の製造に使用
される封入金型は、図3に示す様に、上下金型をかみ合
せる様に圧接し、ポット部1,ランナー部8,ゲート部
2,キャビティ部3を金型内部で空洞となる様に形成し
ている。2. Description of the Related Art Conventionally, as shown in FIG. 3, an encapsulating mold used for manufacturing a resin-sealed semiconductor device is press-contacted so that upper and lower molds are engaged with each other, and a pot portion 1, a runner portion 8 and a gate are formed. The portion 2 and the cavity portion 3 are formed so as to be hollow inside the mold.
【0003】樹脂封止時には、油圧プレス上に取付けら
れ加熱された封入金型のキャビティ部3に半導体チップ
が搭載されたリードフレームを所定の位置に配置した
後、上下金型を圧接しリードフレームを挟みこみポット
部1に円柱形状にタブレット加工された熱硬化性樹脂
(以下、樹脂と記す)タブレット10を供給し、高温状
態で溶融した樹脂をポット部1上のプランジャー9によ
り加圧し、ランナー部8へ流しこみ、更に、ゲート部2
を通し半導体チップを覆う様な半導体装置の外囲器とな
る樹脂部を形取りしたキャビティ部3に溶融樹脂を注入
させる。During resin encapsulation, a lead frame having a semiconductor chip mounted therein is placed in a predetermined position in a cavity 3 of a sealed die which is mounted on a hydraulic press and heated. A thermosetting resin tablet (hereinafter referred to as a resin) tablet 10 formed into a cylindrical shape is supplied to the pot portion 1 by sandwiching it, and the resin melted at a high temperature is pressurized by the plunger 9 on the pot portion 1, It is poured into the runner section 8 and further the gate section 2
The molten resin is injected into the cavity portion 3 formed by shaping the resin portion which will be the envelope of the semiconductor device so as to cover the semiconductor chip.
【0004】樹脂注入後、所定の時間が経過し、樹脂が
硬化した後、上下封入金型を開き、図4に示す様に、ポ
ット部1からランナー部8,ゲート部2,キャビティ部
3の形状に硬化した樹脂をリードフレーム7と共に金型
から取りはずし、金型表面は樹脂かすの残りがない様に
ブラシや高圧エアーの吹きつけにより清掃を行った後、
次のリードフレームを配置し前述と同様に樹脂を注入、
硬化させることにより、連続で半導体装置の樹脂封止成
形を行っている。After the resin has been hardened for a predetermined time after the resin has been injected, the upper and lower enclosing molds are opened, and as shown in FIG. 4, the pot portion 1 to the runner portion 8, the gate portion 2, and the cavity portion 3 are opened. The resin that has hardened into a shape is removed from the mold together with the lead frame 7, and the mold surface is cleaned with a brush or high-pressure air so that no resin residue remains.
Place the next lead frame and inject resin as described above,
By curing, semiconductor device resin molding is continuously performed.
【0005】また、前述の金型から取り出された樹脂と
リードフレーム7は、ゲート部2の先端とキャビティ部
3で切り離され、ポット部1,ランナー部8等の不要な
硬化樹脂は廃棄され、半導体装置の外囲器となる樹脂部
が形成されたリードフレームが得られる。The resin taken out of the mold and the lead frame 7 are separated from the tip of the gate 2 and the cavity 3 and unnecessary potting resin such as the pot 1 and runner 8 is discarded. A lead frame having a resin portion, which serves as an envelope of a semiconductor device, is obtained.
【0006】[0006]
【発明が解決しようとする課題】この従来の半導体装置
の樹脂封止方法に於ては、前述のポット部からランナー
部に形成される樹脂は不要物として廃棄されるため、半
導体装置の樹脂体積に対しての使用樹脂量が大きくな
り、利用効率が非常に悪くなるという欠点があった。特
に、小信号系の半導体装置に於いては、利用効率が5%
以下となり、大きな問題点となっていた。In the conventional resin encapsulation method for a semiconductor device, since the resin formed on the runner portion from the pot portion is discarded as an unnecessary material, the resin volume of the semiconductor device is reduced. However, there is a drawback that the amount of resin used becomes large and the utilization efficiency becomes very poor. Especially in small signal semiconductor devices, the utilization efficiency is 5%.
It became the following and became a big problem.
【0007】最近では、従来金型上に1ケ所しか形成さ
れていなかったポット部を、2ケ所以上に分割したマル
チプランジャー方式が採用されているが、この方法に於
いてもランナー部が若干短くなる程度であり、樹脂の利
用効率を高めることができず、また、ポット数を増加し
た場合、使用される樹脂ダブレットのサイズが小さくな
るための樹脂製造工程に於けるダブレット加工比が極端
に上昇してしまうという問題点がある。Recently, a multi-plunger system has been adopted in which the pot portion, which was conventionally formed only on one place on the mold, is divided into two or more places, but even in this method, the runner portion is slightly different. It is only about shortening, it is not possible to improve the resin utilization efficiency, and when the number of pots is increased, the size of the resin doublet used becomes smaller and the doublet processing ratio in the resin manufacturing process becomes extremely large. There is a problem that it will rise.
【0008】本発明の目的は、使用樹脂の利用効率の高
い半導体装置の製造方法を提供することにある。An object of the present invention is to provide a method of manufacturing a semiconductor device in which the used resin has a high utilization efficiency.
【0009】[0009]
【課題を解決するための手段】本発明は、半導体チップ
が搭載されたリードフレームを所定の位置に配置し高温
状態の上下の封入金型で挟みこんだ後封入金型ポット部
に熱硬化性樹脂を供給し該熱硬化性樹脂を溶融して封入
金型の各キャビティ部に圧入し硬化させることにより、
前記半導体チップを覆う外囲器となる封入樹脂を形成す
る工程を含む半導体装置の製造方法に於いて、前記熱硬
化性樹脂をパウダー状で供給し溶融した後、高温高圧エ
アーを前記封入金型ポット部に加えることにより、溶融
した前記熱硬化性樹脂を前記各キャビティ部に注入し封
入して前記封止樹脂を形成する工程を含む。供給するパ
ウダー状の前記熱硬化性樹脂は、ノズルから供給し、供
給時間により該熱硬化性樹脂量を制御する。前記熱硬化
性樹脂は、流動特性と硬化特性の異る少くとも2種の熱
硬化性樹脂を含む。According to the present invention, a lead frame on which a semiconductor chip is mounted is arranged at a predetermined position and is sandwiched between upper and lower encapsulating molds in a high temperature state, and then a thermosetting property is applied to an encapsulating mold pot portion. By supplying a resin, melting the thermosetting resin, and press-fitting it into each cavity of the encapsulating mold to cure it,
In a method of manufacturing a semiconductor device including a step of forming an encapsulating resin to be an envelope for covering the semiconductor chip, a thermosetting resin is supplied in a powder form and melted, and then high temperature and high pressure air is applied to the encapsulating mold. The method further includes the step of injecting the melted thermosetting resin into each of the cavities and encapsulating it by adding it to the pot to form the sealing resin. The powdery thermosetting resin to be supplied is supplied from a nozzle, and the amount of the thermosetting resin is controlled by the supply time. The thermosetting resin contains at least two thermosetting resins having different flow characteristics and curing characteristics.
【0010】[0010]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【0011】図1は本発明の一実施例を説明する封入金
型の断面図である。FIG. 1 is a sectional view of a sealed mold for explaining one embodiment of the present invention.
【0012】図1に示す様に、金型に於いては、キャビ
ティ部3の近傍にゲート部2を通じてポット部1が設け
られている。樹脂封入時には、リードフレームを封入金
型上のキャビティ部3の所定の位置に配置し、また、ポ
ット部1に適量のパウダー状樹脂6をノズル等により供
給した後に上下の金型を圧接しリードフレームを挟みこ
みパウダー状樹脂6が溶融した後、高圧空気注入口5か
ら高温高圧エアーを送り溶融樹脂をゲート部2を通して
キャビティ部3に注入させる。As shown in FIG. 1, in the mold, the pot portion 1 is provided near the cavity portion 3 through the gate portion 2. At the time of resin encapsulation, the lead frame is placed at a predetermined position of the cavity 3 on the encapsulating mold, and an appropriate amount of the powdery resin 6 is supplied to the pot part 1 by a nozzle or the like, and then the upper and lower molds are pressure-contacted to each other to lead. After sandwiching the frame and melting the powdery resin 6, high-temperature high-pressure air is sent from the high-pressure air inlet 5 to inject the molten resin into the cavity 3 through the gate 2.
【0013】樹脂注入後所定の時間が経過した後に上下
封入金型を開きリードフレームと硬化した樹脂を金型上
から取りはずし、清掃を行った後次のリードフレームを
配置し前述と同様の方法により連続で半導体装置の樹脂
成形を行なう。After a predetermined time has elapsed after the resin injection, the upper and lower encapsulating molds are opened, the lead frame and the cured resin are removed from the mold, and after cleaning, the next lead frame is arranged and the same method as described above is performed. Resin molding of semiconductor devices is continuously performed.
【0014】図2は図1の封入金型から取りはずされた
リードフレームと硬化した樹脂の斜視図である。FIG. 2 is a perspective view of the lead frame detached from the encapsulating mold of FIG. 1 and the cured resin.
【0015】図2に示す様に、リードフレーム7の上に
半導体装置を形成するキャビティ部3とゲート部2及び
ポット部1は、切り離され封入済のリードフレーム7を
得ることができる。As shown in FIG. 2, the cavity portion 3 forming the semiconductor device, the gate portion 2 and the pot portion 1 on the lead frame 7 can be separated to obtain a sealed lead frame 7.
【0016】また、パウダー状樹脂6の量のコントロー
ルが容易にでき、さらに、供給ノズルを複数設けると、
1ケ所のポットに2種類以上のパウダー状樹脂を供給す
ることも可能となる。Further, the amount of the powdery resin 6 can be easily controlled, and if a plurality of supply nozzles are provided,
It is also possible to supply two or more kinds of powdery resins to one pot.
【0017】[0017]
【発明の効果】以上説明したように、本発明に於いて
は、キャビティ部の近傍にポット部を設け直接ゲート部
を通じてキャビティ部に樹脂注入しているため、従来の
ランナー部が不要となり、不要物として廃棄される樹脂
部を小さくすることができ、利用効率を飛躍的に高める
ことが可能となり、また、樹脂をパウダー状で使用でき
るため、ポット部を小さくし、数を増やすことができ、
樹脂製造工程に於けるタブレット加工も不要となるとい
う効果がある。As described above, according to the present invention, the pot portion is provided in the vicinity of the cavity portion and the resin is directly injected into the cavity portion through the gate portion. The resin part that is discarded as a product can be made small, and it is possible to dramatically increase the utilization efficiency.Because the resin can be used in powder form, the pot part can be made smaller and the number can be increased.
There is an effect that tablet processing in the resin manufacturing process is unnecessary.
【0018】更に、従来の封止方法に於いては、1ケ所
のポット部からランナー部を通じて多数のキャビティ部
に樹脂を注入させているための、ポット部からの距離に
より各キャビティ部への注入に時差が生じるため、溶融
状態の差から未充テン等の不良が生じていたが、本発明
に於いては、1ケ所のポット部から1つのキャビティ部
へ注入することが可能となり、金型上に全キャビティ部
について同一状態で樹脂を注入できるため、未充てん等
の不良も減少させることができる効果もある。Further, in the conventional sealing method, since resin is injected from one pot portion into a large number of cavity portions through the runner portion, the resin is injected into each cavity portion depending on the distance from the pot portion. However, due to the difference in the molten state, defects such as unfilled parts were caused. However, in the present invention, it is possible to inject from one pot portion into one cavity portion, and Since the resin can be injected in the same state in all the cavity portions, defects such as unfilling can be reduced.
【図1】本発明の一実施例を説明する封入金型の断面図
である。FIG. 1 is a cross-sectional view of a sealed mold for explaining an embodiment of the present invention.
【図2】図1の封入金型から取りはずされたリードフレ
ームと硬化した樹脂の斜視図である。FIG. 2 is a perspective view of a lead frame and cured resin removed from the encapsulating mold of FIG.
【図3】従来の半導体装置の製造方法を説明する封入金
型の断面図である。FIG. 3 is a cross-sectional view of an enclosed mold for explaining a conventional method for manufacturing a semiconductor device.
【図4】図3の封入金型から取りはずされたリードフレ
ームと硬化した樹脂の斜視図である。FIG. 4 is a perspective view of a lead frame and a cured resin removed from the encapsulating mold of FIG.
1 ポット部 2 ゲート部 3 キャビティ部 4 エアーベント部 5 高圧空気注入口 6 バウダー状樹脂 7 リードフレーム 8 ランナー部 9 プランジャー 10 樹脂タブレット 1 Pot Part 2 Gate Part 3 Cavity Part 4 Air Vent Part 5 High Pressure Air Inlet 6 Bowder Resin 7 Lead Frame 8 Runner Part 9 Plunger 10 Resin Tablet
Claims (3)
ムを所定の位置に配置し高温状態の上下の封入金型で挟
みこんだ後封入金型ポット部に熱硬化性樹脂を供給し該
熱硬化性樹脂を溶融して封入金型の各キャビティ部に圧
入し硬化させることにより、前記半導体チップを覆う外
囲器となる封入樹脂を形成する工程を含む半導体装置の
製造方法に於いて、前記熱硬化性樹脂をパウダー状で供
給し溶融した後、高温高圧エアーを前記封入金型ポット
部に加えることにより、溶融した前記熱硬化性樹脂を前
記各キャビティ部に注入し封入して前記封止樹脂を形成
する工程を含むことを特徴とする半導体装置の製造方
法。1. A thermosetting resin is supplied to the encapsulating mold pot portion after a lead frame having a semiconductor chip mounted thereon is placed at a predetermined position and sandwiched between upper and lower encapsulating molds in a high temperature state. In the method of manufacturing a semiconductor device, including the step of forming an encapsulated resin that serves as an envelope that covers the semiconductor chip by melting the resin and press-fitting it into each cavity of the enclosure mold to cure the resin, After the thermosetting resin is supplied in a powder form and melted, high-temperature high-pressure air is added to the encapsulating mold pot section to inject the molten thermosetting resin into each of the cavity sections and enclose the encapsulating resin. A method of manufacturing a semiconductor device, comprising the step of forming.
をノズルから供給し、供給時間により該熱硬化性樹脂量
を制御することを特徴とする請求項1記載の半導体装置
の製造方法。2. The method for manufacturing a semiconductor device according to claim 1, wherein the powdery thermosetting resin to be supplied is supplied from a nozzle, and the amount of the thermosetting resin is controlled by the supply time.
の異る少くとも2種の熱硬化性樹脂を含むことを特徴と
する請求項1記載の半導体装置の製造方法。3. The method of manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin contains at least two kinds of thermosetting resins having different flow characteristics and curing characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29533191A JP2666630B2 (en) | 1991-11-12 | 1991-11-12 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29533191A JP2666630B2 (en) | 1991-11-12 | 1991-11-12 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05211185A true JPH05211185A (en) | 1993-08-20 |
JP2666630B2 JP2666630B2 (en) | 1997-10-22 |
Family
ID=17819233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29533191A Expired - Lifetime JP2666630B2 (en) | 1991-11-12 | 1991-11-12 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2666630B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6491857B2 (en) | 1997-01-13 | 2002-12-10 | Nec Corporation | Process of packaging semiconductor chip in synthetic resin produced from pressurized granular synthetic resin and molding die used therein |
JP2006073785A (en) * | 2004-09-02 | 2006-03-16 | Nec Electronics Corp | Sealing apparatus and device manufacturing method |
-
1991
- 1991-11-12 JP JP29533191A patent/JP2666630B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6491857B2 (en) | 1997-01-13 | 2002-12-10 | Nec Corporation | Process of packaging semiconductor chip in synthetic resin produced from pressurized granular synthetic resin and molding die used therein |
JP2006073785A (en) * | 2004-09-02 | 2006-03-16 | Nec Electronics Corp | Sealing apparatus and device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JP2666630B2 (en) | 1997-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970527 |