JPH0519501B2 - - Google Patents
Info
- Publication number
- JPH0519501B2 JPH0519501B2 JP63218925A JP21892588A JPH0519501B2 JP H0519501 B2 JPH0519501 B2 JP H0519501B2 JP 63218925 A JP63218925 A JP 63218925A JP 21892588 A JP21892588 A JP 21892588A JP H0519501 B2 JPH0519501 B2 JP H0519501B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- dielectric
- composition
- microwave
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims description 2
- 229910003447 praseodymium oxide Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 Sm 2 O 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
（産業上の利用分野）
本発明は、誘電体共振器等のマイクロ波回路素
子に用いられる誘電体材料に係り、金属酸化物を
焼成して得られる高誘電率で、誘電損失が小さ
く、誘電率の温度係数の小さい誘電体磁器組成物
に関する。
（従来の技術）
近年、マイクロ波回路技術の進歩に伴い、回路
の小型化が図られている。
従来から、このマイクロ波周波数帯（300MHz
〜30GHz）の回路には、空胴共振器、アンテナな
どが用いられて来たが、これらはマイクロ波の波
長と同程度の大きさになるため回路の小型化には
不向きであつた。これに対し、近年、マイクロ波
周波数帯で使用される誘電体共振器を用いたマイ
クロ波フイルタ、発振器の周波数安定化を計るた
めの小型誘電体共振器、マイクロ波IC用のコン
デンサや基盤等に用いられる誘電体磁器等、マイ
クロ波回路に誘電体磁器を用いて回路の小型化を
図る応用がなされている。これらの磁器に要求さ
れる特性は、マイクロ波周波数帯でその誘電損失
が小さく、使用周波数帯に適した高い誘電率をも
ち、誘電率の温度係数が小さい事である。
従来からこれらの特性を満足する磁器材料とし
ては、Ba2Ti9O20系、MgTiO3−CaTiO3系、
ZrO2−TiO2−SnO2系などが知られてはいるが、
これらはいずれもεrが30〜40程度と小さいため、
0.1〜4GHzの周波数帯で素子が大くなり、実用上
問題が多い。
この0.1GHz〜4GHzの周波数帯での使用に適し
た材料としては、εrが70〜90程度のものとして、
BaO−TiO2−Sm2O3系、BaO−TiO2−Nd2O3系
などの組成物を使用している。このBaO−TiO2
−Sm2O3系の誘電体組成物については特公昭60
−51201号に開示されている。
（発明が解決しようとする問題点）
しかし、この特公昭60−51201号に開示されて
いるような従来の誘電体磁器組成物を用いて、誘
電体共振器を製作した場合、共振周波数の温度係
数（τf）が０（ppm／℃）付近では、組成変動によ
る温度係数の変化が大きく、また無負荷Ｑが小さ
いなど、実用上で問題点が多かつた。
（問題点を解決するための手段）
発明者らは、これらの欠点を鑑み種々の組成系
について検討した結果、酸化バリウム（BaO）
と酸化チタン（TiO2）と酸化サマリウム
（Sm2O3）と酸化セリウム（CeO2）と酸化プラセ
オジム（Pr6O11）とからなる誘電体磁器組成物
であつて、組成式をxBaO・yTiO2・（ｚ−z1−
z2）SmO3/2・z1CeO2・z2PrO11/6と表わした時、
組成範囲がモル分率で、７≦ｘ≦17，57≦ｙ≦
63，23≦ｚ≦33，Ｏ＜z1≦12，０＜z2≦12ただし
10＜ｚ−z1−z2の範囲にある誘電体磁器組成物
が、又前記主成分組成に対し、酸化イツトリウム
を5wt％以下添加含有してなる誘電体磁器組成物
が、誘電体共振器、マイクロ波用コンデンサ、基
盤等に用いる誘電体磁器として優れた特性をも
ち、実用に供するに適した材料である事を見出し
た。
（実施例）
以下本発明を実施例に従つて説明する。試料を
作成するための出発原料は、99.9％以上の高純度
のBaCO3，TiO2，Sm2O3，CeO2，Pr6O11および
Y2O3の粉末を用い、所定の各組成になる様に秤
量し、ボールミルに純水とともに投入し湿式混合
を行なつた。この混合物を乾燥させた後、800℃
〜1100℃で４時間仮焼し、得られた仮焼粉末を所
定の各組成になる様に調合して、再びメノウボー
ルミルに純水とともに投入し、湿式粉砕を行なつ
た。この様にして得られた粉砕物を乾燥させた
後、バインダ水溶液を添加混練して得た造粒粉末
を1.5ton／cm2の圧力を加えて成形し、得られた成
形体を1200℃〜1500℃で２時間空気中で焼成を行
なつて焼成体を得た。その後、得られた磁器を用
いて誘電体共振器を構成し、誘電体共振器の共振
周波数と無負荷Ｑを測定して誘電率を求めた。得
られた誘電体共振器の共振周波数は３〜6GHzで
あつた。共振周波数の温度依存性は誘電体共振器
の共振周波数の温度変化を−25℃〜＋85℃の間で
測定して求めた。得られた試料での測定結果を第
１表に示す。この表中＊印を付した試料は本発明
の範囲外の比較例であり、これ以外の試が本発の
範囲内の実施例である。
(Industrial Application Field) The present invention relates to a dielectric material used in microwave circuit elements such as dielectric resonators, which has a high dielectric constant obtained by firing a metal oxide, has a small dielectric loss, and has a low dielectric loss. The present invention relates to a dielectric ceramic composition having a small temperature coefficient. (Prior Art) In recent years, with advances in microwave circuit technology, circuits have been made smaller. Traditionally, this microwave frequency band (300MHz
Cavity resonators, antennas, etc. have been used in circuits of up to 30 GHz), but these are not suitable for miniaturizing circuits because their size is about the same as the wavelength of microwaves. In contrast, in recent years, microwave filters using dielectric resonators used in the microwave frequency band, small dielectric resonators for stabilizing the frequency of oscillators, capacitors and boards for microwave ICs, etc. Applications have been made to miniaturize circuits by using dielectric ceramics in microwave circuits. The characteristics required of these ceramics are that their dielectric loss is small in the microwave frequency band, that they have a high dielectric constant suitable for the frequency band in use, and that the temperature coefficient of the dielectric constant is small. Traditionally, porcelain materials that satisfy these characteristics include Ba 2 Ti 9 O 20 series, MgTiO 3 −CaTiO 3 series,
Although the ZrO 2 −TiO 2 −SnO 2 system is known,
All of these have a small εr of about 30 to 40, so
In the 0.1 to 4 GHz frequency band, the elements become large, which poses many practical problems. Materials suitable for use in this 0.1GHz to 4GHz frequency band are those with an εr of about 70 to 90.
Compositions such as BaO-TiO2-Sm2O3 and BaO - TiO2 - Nd2O3 are used. This BaO−TiO 2
−For Sm 2 O 3 based dielectric compositions,
-Disclosed in No. 51201. (Problems to be Solved by the Invention) However, when a dielectric resonator is manufactured using a conventional dielectric ceramic composition as disclosed in Japanese Patent Publication No. 60-51201, the temperature at the resonant frequency When the coefficient (τf) is around 0 (ppm/°C), there are many problems in practical use, such as a large change in temperature coefficient due to compositional fluctuations and a small no-load Q. (Means for solving the problem) As a result of studying various composition systems in view of these drawbacks, the inventors found that barium oxide (BaO)
A dielectric ceramic composition consisting of titanium oxide (TiO 2 ), samarium oxide (Sm 2 O 3 ), cerium oxide (CeO 2 ), and praseodymium oxide (Pr 6 O 11 ), with the composition formula xBaO・yTiO 2・(z−z 1 −
z 2 ) When expressed as SmO 3/2・z 1 CeO 2・z 2 PrO 11/6 ,
The composition range is mole fraction, 7≦x≦17, 57≦y≦
63, 23≦z≦33, O＜z 1 ≦12, 0＜z 2 ≦12
A dielectric ceramic composition in the range of 10<z-z 1 - z 2 , and a dielectric ceramic composition containing 5 wt% or less of yttrium oxide with respect to the main component composition, can be used as a dielectric resonator. It was discovered that this material has excellent properties as a dielectric ceramic used in microwave capacitors, substrates, etc., and is suitable for practical use. (Example) The present invention will be described below with reference to Examples. The starting materials for preparing the samples are BaCO 3 , TiO 2 , Sm 2 O 3 , CeO 2 , Pr 6 O 11 and
Y 2 O 3 powder was weighed to give each predetermined composition, and put into a ball mill together with pure water for wet mixing. After drying this mixture, 800℃
Calcination was carried out at ~1100°C for 4 hours, and the resulting calcined powder was mixed to have each predetermined composition, and then put into the agate ball mill together with pure water again for wet pulverization. After drying the pulverized product obtained in this way, the granulated powder obtained by adding and kneading an aqueous binder solution is molded by applying a pressure of 1.5 ton/cm 2 , and the resulting molded product is heated to 1200℃~ A fired body was obtained by firing in air at 1500°C for 2 hours. Thereafter, a dielectric resonator was constructed using the obtained ceramic, and the resonant frequency and no-load Q of the dielectric resonator were measured to determine the dielectric constant. The resonant frequency of the obtained dielectric resonator was 3 to 6 GHz. The temperature dependence of the resonant frequency was determined by measuring the temperature change in the resonant frequency of the dielectric resonator between -25°C and +85°C. Table 1 shows the measurement results for the obtained samples. The samples marked with * in this table are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention.
【表】【table】
【表】
（発明の効果）
以上のように、本発明にかかる誘電体磁器組成
物は、マイクロ波周波数において誘電率が80程度
と大きく、かつ誘電体損失が小さいと同時に、誘
電率の温度係数が小さい材料であることがわか
る。これらはマイクロ波周波数帯で使用される回
路素子、基盤として極めて有用な誘電体磁器材料
であることは明白である。なお本材料は低周波領
域でも誘電損失が小さく、Ｑ値の高いコンデンサ
材料としても優れた材料であることを確認した。[Table] (Effects of the Invention) As described above, the dielectric ceramic composition according to the present invention has a large dielectric constant of about 80 at microwave frequencies, a small dielectric loss, and a temperature coefficient of the dielectric constant. It can be seen that this is a small material. It is clear that these dielectric ceramic materials are extremely useful as circuit elements and substrates used in the microwave frequency band. It was confirmed that this material has low dielectric loss even in the low frequency range and is an excellent material for capacitors with a high Q value.
Claims (1)
と酸化サマリウム（Sm2O3）と酸化セリウム
（CeO2）と酸化プラセオジム（Pr6O11）とからな
る誘電体磁器組成物であつて、組成式を xBaO・yTiO2・（ｚ−z1−z2）SmO3/2 ・z1CeO2・z2PrO11/6 と表わした時、組成範囲がモル分率で、７≦ｘ≦
17，57≦ｙ≦63，23≦ｚ≦33，Ｏ＜z1≦12，０＜
z2≦12ただし10＜ｚ−z1−z2の範囲にある主成分
組成に対し、酸化イツトリウムを5wt％以下添加
含有している事を特徴とする誘電体磁器組成物。[Claims] 1. Barium oxide (BaO) and titanium oxide (TiO 2 )
A dielectric ceramic composition consisting of samarium oxide (Sm 2 O 3 ), cerium oxide (CeO 2 ), and praseodymium oxide (Pr 6 O 11 ), whose composition formula is xBaO・yTiO 2・(z−z 1 ) . −z 2 ) SmO 3/2・z 1 CeO 2・z 2 PrO When expressed as 11/6 , the composition range is the molar fraction, and 7≦x≦
17, 57≦y≦63, 23≦z≦33, O＜z 1 ≦12, 0＜
A dielectric ceramic composition characterized in that yttrium oxide is added in an amount of 5 wt% or less to a main component composition in the range of z 2 ≦12 but 10 < z − z 1 −z 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218925A JPH0269350A (en) | 1988-08-31 | 1988-08-31 | Dielectric ceramic composition for microwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218925A JPH0269350A (en) | 1988-08-31 | 1988-08-31 | Dielectric ceramic composition for microwave |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0269350A JPH0269350A (en) | 1990-03-08 |
| JPH0519501B2 true JPH0519501B2 (en) | 1993-03-16 |
Family
ID=16727473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63218925A Granted JPH0269350A (en) | 1988-08-31 | 1988-08-31 | Dielectric ceramic composition for microwave |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0269350A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033784A (en) * | 1983-08-04 | 1985-02-21 | Sanyo Electric Co Ltd | Ghost eliminating device |
| JPS6118283A (en) * | 1984-07-04 | 1986-01-27 | Nec Corp | Automatic level correcting device of analog picture signal |
| JPH0236546A (en) * | 1988-07-27 | 1990-02-06 | Hitachi Ltd | Test of semiconductor memory |
-
1988
- 1988-08-31 JP JP63218925A patent/JPH0269350A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033784A (en) * | 1983-08-04 | 1985-02-21 | Sanyo Electric Co Ltd | Ghost eliminating device |
| JPS6118283A (en) * | 1984-07-04 | 1986-01-27 | Nec Corp | Automatic level correcting device of analog picture signal |
| JPH0236546A (en) * | 1988-07-27 | 1990-02-06 | Hitachi Ltd | Test of semiconductor memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0269350A (en) | 1990-03-08 |
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