JPH0519297A - Liquid crystal panel, liquid crystal display device and production thereof - Google Patents

Liquid crystal panel, liquid crystal display device and production thereof

Info

Publication number
JPH0519297A
JPH0519297A JP3172856A JP17285691A JPH0519297A JP H0519297 A JPH0519297 A JP H0519297A JP 3172856 A JP3172856 A JP 3172856A JP 17285691 A JP17285691 A JP 17285691A JP H0519297 A JPH0519297 A JP H0519297A
Authority
JP
Japan
Prior art keywords
liquid crystal
photoresist
crystal display
semiconductor active
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3172856A
Other languages
Japanese (ja)
Inventor
Keizo Kobayashi
敬三 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3172856A priority Critical patent/JPH0519297A/en
Publication of JPH0519297A publication Critical patent/JPH0519297A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain the liquid crystal display panel which is free from deviation in patterns and has the largest possible effective display area by executing the patterning of light shielding films and semiconductors 4, active layers by self-matching. CONSTITUTION:Insulating films 3, gate electrode gate insulating films 5, and the semiconductor active layers 6, 7 are provided on the light shielding films 2. The semiconductor active layers 6, 7 are exposed over the entire surface from the glass substrate 1 side and are patterned in a self-matching manner by the light shielding films 2 at the time of patterning the semiconductor active layers 6, 7 by a photoresist 8.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示パネル,液晶表
示装置及びそれらの製造方法に関し、特に薄膜トランジ
スタの半導体活性層と遮光部を位置的に整合させた液晶
表示パネル,液晶表示装置及びそれらの製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display panel, a liquid crystal display device and a manufacturing method thereof, and more particularly to a liquid crystal display panel and a liquid crystal display device in which a semiconductor active layer of a thin film transistor and a light shielding part are aligned with each other. It relates to a manufacturing method.

【0002】[0002]

【従来の技術】図3は逆スタガー型薄膜トランジスタ
(TFT)を用いた従来のアクティブマトリクス液晶表
示装置(LCD)の模式図である。TFTはゲート電極
4上に半導体Siの活性層6を有し、同じ半導体Siの
コンタクト層7を介してソース・ドレイン金属9が接続
されて形成されている。このTFT部は表示に対しては
無効部である。しかもTFTを構成する半導体Si活性
層6及びコンタクト層7に光照射されると光励起による
電子−正孔対を発生し、その結果TFTのオフ電流(漏
洩電流)を高めコントラストを低める等の欠点が生じ
る。上記の欠点を無くすため遮光膜(通常金属層)2
1,22,23をもうけ、外部からの光を遮蔽する方法
がとられる。ここで遮光膜21又は22の設置はガラス
基板1側からのバックライト照射に有効であり、遮光膜
23の設置はガラス基板15側からのバックライトの照
射に有効である。
2. Description of the Related Art FIG. 3 is a schematic view of a conventional active matrix liquid crystal display device (LCD) using an inverted stagger type thin film transistor (TFT). The TFT has a semiconductor Si active layer 6 on a gate electrode 4, and is formed by connecting a source / drain metal 9 through a contact layer 7 of the same semiconductor Si. This TFT section is an ineffective section for display. Moreover, when the semiconductor Si active layer 6 and the contact layer 7 constituting the TFT are irradiated with light, electron-hole pairs are generated by photoexcitation, and as a result, the off current (leakage current) of the TFT is increased and the contrast is lowered. Occurs. Light-shielding film (usually metal layer) 2 to eliminate the above-mentioned drawbacks
The method of shielding the light from the outside by taking 1, 22, 23 is adopted. Here, the provision of the light shielding film 21 or 22 is effective for the backlight irradiation from the glass substrate 1 side, and the provision of the light shielding film 23 is effective for the backlight irradiation from the glass substrate 15 side.

【0003】[0003]

【発明が解決しようとする課題】この従来の遮光膜は少
なくとも半導体Si層を包む形で外側に設ける必要があ
る。しかし、このパターンレイアウト上の余裕度をとり
すぎると表示部の実効面積が小さくなり輝度特性が悪く
なる。一方、余裕度が厳しすぎるとパターンずれにより
半導体Si層に光照射されオフ電流が増大するという問
題があった。
This conventional light-shielding film needs to be provided on the outside so as to wrap at least the semiconductor Si layer. However, if the margin in this pattern layout is too large, the effective area of the display unit becomes small and the luminance characteristics deteriorate. On the other hand, if the margin is too strict, there is a problem that the semiconductor Si layer is irradiated with light due to the pattern shift and the off current increases.

【0004】さらに、遮光膜のパターニングと半導体活
性層のパターニングを、別々のマスクを用いたフォトリ
ソグラフィ工程を経ることは、マスク枚数増加によるコ
スト高,工程増加による作製時間の増加,歩留りの低下
を招くという問題があった。
Further, if the patterning of the light-shielding film and the patterning of the semiconductor active layer are performed by a photolithography process using separate masks, the cost increases due to the increase in the number of masks, the manufacturing time increases due to the increase in the processes, and the yield decreases. There was a problem of inviting.

【0005】[0005]

【課題を解決するための手段】本発明によれば、透明基
板上にピクセルを駆動する薄膜トランジスタを有する液
晶表示パネルで、薄膜トランジスタにおける半導体活性
層と遮光膜が位置的に重なって一致している液晶表示パ
ネル及び液晶表示装置が得られる。
According to the present invention, in a liquid crystal display panel having a thin film transistor for driving a pixel on a transparent substrate, a liquid crystal in which a semiconductor active layer and a light shielding film in the thin film transistor are aligned and overlapped with each other. A display panel and a liquid crystal display device can be obtained.

【0006】液晶表示装置を使用する際、遮光膜によっ
て十分に遮光されず、半導体活性層に光が照射される
と、オフ電流が増大することがある。これらを防止する
には、半導体活性層を遮光する必要がある。また、遮光
膜の面積は出来る限り小さくして、液晶表示装置の実効
表示面積がなるべく大きい方が望ましい。
When a liquid crystal display device is used, if the light blocking film does not sufficiently block light and the semiconductor active layer is irradiated with light, off current may increase. In order to prevent these, it is necessary to shield the semiconductor active layer from light. Further, it is desirable that the area of the light shielding film is as small as possible and the effective display area of the liquid crystal display device is as large as possible.

【0007】更に、本発明の製造方法によれば、透明基
板の一主面上に選択的に遮光膜を形成する工程と、遮光
膜上で遮光膜に含まれる部分にゲート電極を形成する工
程と、ゲート電極上に透明絶縁膜を形成する工程と、透
明絶縁膜上に半導体活性層を形成する工程と、半導体活
性層上にフォトレジストを形成する工程と、透明基板の
他の主面から照射し、遮光膜をマスクとしてフォトレジ
ストを感光させる工程と、フォトレジストの感光した部
分のフォトレジスト及び前記半導体活性層を除去する工
程と、感光した部分以外のフォトレジストを除去する工
程と、その後選択的にソース,ドレイン及び表示電極を
形成する工程とを含む液晶表示パネル又は液晶表示装置
が得られる。
Further, according to the manufacturing method of the present invention, a step of selectively forming a light shielding film on one main surface of the transparent substrate and a step of forming a gate electrode on a portion of the light shielding film included in the light shielding film. A step of forming a transparent insulating film on the gate electrode, a step of forming a semiconductor active layer on the transparent insulating film, a step of forming a photoresist on the semiconductor active layer, and from the other main surface of the transparent substrate. Irradiation, the step of exposing the photoresist using the light-shielding film as a mask, the step of removing the photoresist in the exposed portion of the photoresist and the semiconductor active layer, the step of removing the photoresist other than the exposed portion, and then A liquid crystal display panel or liquid crystal display device including a step of selectively forming a source, a drain and a display electrode can be obtained.

【0008】遮光膜とゲート電極の間には絶縁膜を形成
するのが好ましい。また、半導体活性層は、ソース,ド
レイン電極取り出し部に不純物濃度の高い層を更に設け
るのが好ましい。
It is preferable to form an insulating film between the light shielding film and the gate electrode. Further, it is preferable that the semiconductor active layer is further provided with a layer having a high impurity concentration at the source / drain electrode extraction portion.

【0009】更にまた、本発明の製造方法によれば、透
明基板の一主面上にゲート電極を選択的に形成する工程
と、ゲート電極上に透明絶縁膜を形成する工程と、透明
絶縁膜上に半導体活性層を形成する工程と、透明基板の
他の主面上に遮光膜を形成する工程と、半導体活性層上
及び遮光膜上にフォトレジストを形成する工程と、一方
のフォトレジスト上にマスクを介して照射し双方のフォ
トレジストを感光させる工程と、フォトレジストの感光
した部分のフォトレジスト,半導体活性層及び遮光膜を
除去する工程と、感光した部分以外のフォトレジストを
除去する工程と、その後選択的にソース,ドレイン及び
表示電極を形成する工程とを含む液晶表示パネル又は液
晶表示装置が得られる。
Furthermore, according to the manufacturing method of the present invention, the step of selectively forming a gate electrode on one main surface of the transparent substrate, the step of forming a transparent insulating film on the gate electrode, and the transparent insulating film A step of forming a semiconductor active layer thereon, a step of forming a light-shielding film on the other main surface of the transparent substrate, a step of forming a photoresist on the semiconductor active layer and the light-shielding film, and on one photoresist. Of irradiating both photoresists through a mask to the photoresist, a step of removing the photoresist, the semiconductor active layer and the light-shielding film in the exposed area of the photoresist, and a step of removing the photoresist except the exposed area. Then, a liquid crystal display panel or liquid crystal display device including a step of selectively forming a source, a drain and a display electrode after that is obtained.

【0010】[0010]

【実施例】次に本発明について図面を参照して説明す
る。図1は本発明による液晶表示装置の製造方法の第1
の実施例を示す工程概略図である。
The present invention will be described below with reference to the drawings. FIG. 1 shows a first method of manufacturing a liquid crystal display device according to the present invention.
FIG. 6 is a schematic process diagram showing the example of FIG.

【0011】まず、ガラス基板1上Crによる遮光膜2
を設けさらにその上に全面シリコン窒化膜,シリコン酸
化膜等の絶縁膜3を形成する(図1A)。
First, the light shielding film 2 made of Cr on the glass substrate 1
Then, an insulating film 3 such as a silicon nitride film or a silicon oxide film is formed on the entire surface (FIG. 1A).

【0012】次にゲート金属の形成パターニング4を行
い、さらにゲート絶縁膜5,非晶質Si膜6,高濃度n
型不純物添加(n+ )非晶質Si膜7を順次形成する。
次にポジタイプの感光性樹脂(フォトレジスト)8を塗
布し感光するが、この際マスクを用いず、裏面より光照
射し、遮光膜22による自己整合で感光する。かくして
遮光膜2に整合する部分以外のフォトレジスト8は除去
される(図1B)。
Next, a gate metal formation patterning 4 is performed, and further, a gate insulating film 5, an amorphous Si film 6, and a high concentration n.
A type impurity-doped (n + ) amorphous Si film 7 is sequentially formed.
Next, a positive type photosensitive resin (photoresist) 8 is applied and exposed to light. At this time, light is irradiated from the back surface without using a mask, and exposure is performed by self-alignment by the light shielding film 22. Thus, the photoresist 8 other than the portion aligned with the light shielding film 2 is removed (FIG. 1B).

【0013】次にSi膜6,7のエッチングを行い、フ
ォトレジスト8を除去して、図1Cの構造を得る。その
結果、半導体活性層6,7と遮光膜2は整合される。
Next, the Si films 6 and 7 are etched and the photoresist 8 is removed to obtain the structure of FIG. 1C. As a result, the semiconductor active layers 6 and 7 are aligned with the light shielding film 2.

【0014】図2は本発明にたよ製造方法の第2の実施
例を示す工程概略図である。
FIG. 2 is a process schematic diagram showing a second embodiment of the manufacturing method according to the present invention.

【0015】ガラス基板1上にゲート膜の形成・パター
ニング4を行い次にゲート絶縁膜5,非晶質Si膜6,
+ 非晶質Si膜7を順次形成する(図2A)。
A gate film is formed and patterned 4 on the glass substrate 1, and then the gate insulating film 5, the amorphous Si film 6,
The n + amorphous Si film 7 is sequentially formed (FIG. 2A).

【0016】次に光遮光部となる金属膜21を裏面に形
成し、表面と裏面にフォトレジスト膜8を塗布し(図2
B),マスク(図に記載せず)を介して露光する。露光
は表面あるいは裏面どちらから行ってもよい。
Next, a metal film 21 serving as a light shielding portion is formed on the back surface, and a photoresist film 8 is applied to the front surface and the back surface (see FIG. 2).
B), exposing through a mask (not shown in the figure). The exposure may be performed from either the front surface or the back surface.

【0017】その後、マスクの部のみが感光されたフォ
トレジスト膜8をマスクとして半導体活性層6,7をエ
ッチングして図2Cに示す構造となる。このパターニン
グされた遮光膜22と半導体活性層6,7は同一パター
ンとなり、位置合わせのための余裕度は本質的に零とな
る。
After that, the semiconductor active layers 6 and 7 are etched by using the photoresist film 8 in which only the mask portion has been exposed as a mask to obtain the structure shown in FIG. 2C. The patterned light-shielding film 22 and the semiconductor active layers 6 and 7 have the same pattern, and the margin for alignment is essentially zero.

【0018】この実施例では、遮光膜2とゲート金属4
との間はガラス基板1を挟んでいるため、図1Aに示さ
れる絶縁膜3の成長工程が不要であるという利点を有す
る。
In this embodiment, the light shielding film 2 and the gate metal 4 are
Since the glass substrate 1 is sandwiched between and, there is an advantage that the step of growing the insulating film 3 shown in FIG. 1A is unnecessary.

【0019】[0019]

【発明の効果】以上説明したように本発明は、液晶表示
パネルにおける薄膜トランジスタの半導体活性層と遮光
膜を整合することにより、半導体活性層に光照射されて
オフ電流が増大することなく、最大限の実効表示面積を
得ることができる、という効果を有する。
As described above, according to the present invention, by aligning the semiconductor active layer of the thin film transistor in the liquid crystal display panel with the light-shielding film, the semiconductor active layer is not irradiated with light and the off current is not increased. It has an effect that the effective display area can be obtained.

【0020】更に、半導体活性部のパターニングを遮光
膜による自己整合を利用した全面露光で行うことによ
り、マスクによる位置合わせが必要なく、歩留りを向上
させ、コストを低減させる、という効果を有する。
Further, the patterning of the semiconductor active portion is performed by the whole surface exposure utilizing the self-alignment by the light shielding film, so that the alignment by the mask is not required, the yield is improved, and the cost is reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による液晶表示装置の製造方法の第1の
実施例を示す工程概略図である。
FIG. 1 is a schematic process diagram showing a first embodiment of a method of manufacturing a liquid crystal display device according to the present invention.

【図2】本発明による液晶表示装置の製造方法の第2の
実施例を示す工程概略図である。
FIG. 2 is a process schematic diagram showing a second embodiment of the method of manufacturing a liquid crystal display device according to the present invention.

【図3】従来の液晶表示装置を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2,21,22,23 遮光膜 3 絶縁膜 4 ゲート電極 5 ゲート絶縁膜 6 非晶質Si膜 7 n+ 非晶質Si 8 感光性樹脂(フォトレジスト) 9 ソース・ドレイン電極 10 表示電極 11 液晶 12 配向膜(ポリイミド膜) 13 対向電極 14 カラーフィルタ 15 ガラス基板1 glass substrate 2, 21, 22, 23 light-shielding film 3 insulating film 4 gate electrode 5 gate insulating film 6 amorphous Si film 7 n + amorphous Si 8 photosensitive resin (photoresist) 9 source / drain electrode 10 display Electrode 11 Liquid crystal 12 Alignment film (polyimide film) 13 Counter electrode 14 Color filter 15 Glass substrate

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 透明基板上にピクセルを駆動する薄膜ト
ランジスタを有する液晶表示パネルにおいて、前記薄膜
トランジスタにおける半導体活性層に位置が一致する遮
光膜が形成されていることを特徴とする液晶表示パネ
ル。
1. A liquid crystal display panel having a thin film transistor for driving pixels on a transparent substrate, wherein a light shielding film whose position is aligned with a semiconductor active layer of the thin film transistor is formed.
【請求項2】 請求項1記載の液晶表示パネルを有する
ことを特徴とする液晶表示装置。
2. A liquid crystal display device comprising the liquid crystal display panel according to claim 1.
【請求項3】 透明基板の一主面上に選択的に遮光膜を
形成する工程と、ゲート電極を前記遮光膜とは重なって
形成する工程と、前記ゲート電極上に透明絶縁膜を形成
する工程と、前記透明絶縁膜上に半導体活性層を形成す
る工程と、前記半導体活性層上にフォトレジストを形成
する工程と、前記透明基板の他の主面から照射し、前記
遮光膜をマスクとして前記フォトレジストを感光させる
工程と、前記フォトレジストの感光した部分の前記フォ
トレジスト及び前記半導体活性層を除去する工程と、前
記感光した部分以外のフォトレジストを除去する工程
と、その後選択的にソース,ドレイン及び表示電極を形
成する工程とを含むことを特徴とする請求項1記載の液
晶表示パネルの製造方法又は請求項2記載の液晶表示装
置の製造方法。
3. A step of selectively forming a light shielding film on one main surface of a transparent substrate, a step of forming a gate electrode overlapping the light shielding film, and a transparent insulating film formed on the gate electrode. Step, forming a semiconductor active layer on the transparent insulating film, forming a photoresist on the semiconductor active layer, irradiating from the other main surface of the transparent substrate, using the light shielding film as a mask A step of exposing the photoresist, a step of removing the photoresist and the semiconductor active layer in the exposed portion of the photoresist, a step of removing the photoresist other than the exposed portion, and then a selective source The method for manufacturing a liquid crystal display panel according to claim 1, or the method for manufacturing a liquid crystal display device according to claim 2, further comprising: forming a drain and a display electrode.
【請求項4】 透明基板の一主面上にゲート電極を選択
的に形成する工程と、前記ゲート電極上に透明絶縁膜を
形成する工程と、前記透明絶縁膜上に半導体活性層を形
成する工程と、前記透明基板の他の主面上に遮光膜を形
成する工程と、前記半導体活性層上及び前記遮光膜上に
フォトレジストを形成する工程と、一方の前記フォトレ
ジスト上にマスクを介して照射し双方の前記フォトレジ
ストを感光させる工程と、前記フォトレジストの感光し
た部分の前記フォトレジスト,前記半導体活性層及び前
記遮光膜を除去する工程と、前記感光した部分以外のフ
ォトレジストを除去する工程と、その後選択的にソー
ス,ドレイン及び表示電極を形成する工程とを含むこと
を特徴とする請求項1記載の液晶表示パネルの製造方法
又は請求項2記載の液晶表示装置の製造方法。
4. A step of selectively forming a gate electrode on one main surface of a transparent substrate, a step of forming a transparent insulating film on the gate electrode, and a semiconductor active layer on the transparent insulating film. A step of forming a light-shielding film on the other main surface of the transparent substrate, a step of forming a photoresist on the semiconductor active layer and the light-shielding film, and a mask on one of the photoresists. And irradiate both the photoresists to expose the photoresist, the step of removing the photoresist, the semiconductor active layer and the light-shielding film in the exposed portion of the photoresist, and the photoresist other than the exposed portion. 3. The method for producing a liquid crystal display panel according to claim 1, or the liquid according to claim 2, further comprising the step of: and a step of selectively forming a source, a drain and a display electrode. Of manufacturing a crystal display device.
JP3172856A 1991-07-15 1991-07-15 Liquid crystal panel, liquid crystal display device and production thereof Pending JPH0519297A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3172856A JPH0519297A (en) 1991-07-15 1991-07-15 Liquid crystal panel, liquid crystal display device and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3172856A JPH0519297A (en) 1991-07-15 1991-07-15 Liquid crystal panel, liquid crystal display device and production thereof

Publications (1)

Publication Number Publication Date
JPH0519297A true JPH0519297A (en) 1993-01-29

Family

ID=15949565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3172856A Pending JPH0519297A (en) 1991-07-15 1991-07-15 Liquid crystal panel, liquid crystal display device and production thereof

Country Status (1)

Country Link
JP (1) JPH0519297A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246348A (en) * 2008-03-10 2009-10-22 Semiconductor Energy Lab Co Ltd Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
WO2012046421A1 (en) * 2010-10-06 2012-04-12 シャープ株式会社 Thin film transistor substrate and process for production thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01267616A (en) * 1988-04-20 1989-10-25 Hitachi Ltd Liquid crystal display
JPH02234128A (en) * 1989-03-08 1990-09-17 Hitachi Ltd Production of liquid crystal display device
JPH03148636A (en) * 1989-11-06 1991-06-25 Toshiba Corp Manufacture of active matrix type liquid crystal display element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01267616A (en) * 1988-04-20 1989-10-25 Hitachi Ltd Liquid crystal display
JPH02234128A (en) * 1989-03-08 1990-09-17 Hitachi Ltd Production of liquid crystal display device
JPH03148636A (en) * 1989-11-06 1991-06-25 Toshiba Corp Manufacture of active matrix type liquid crystal display element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246348A (en) * 2008-03-10 2009-10-22 Semiconductor Energy Lab Co Ltd Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
TWI509700B (en) * 2008-03-10 2015-11-21 Semiconductor Energy Lab Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
WO2012046421A1 (en) * 2010-10-06 2012-04-12 シャープ株式会社 Thin film transistor substrate and process for production thereof
US8956930B2 (en) 2010-10-06 2015-02-17 Sharp Kabushiki Kaisha Process for production of thin film transistor substrate

Similar Documents

Publication Publication Date Title
KR100482735B1 (en) Process for forming pattern and method for producing liquid crystal display apparatus
US7907226B2 (en) Method of fabricating an array substrate for liquid crystal display device
USRE41632E1 (en) Liquid crystal display device and method of manufacturing the same
JP4593094B2 (en) Liquid crystal display device and manufacturing method thereof
US6300174B1 (en) Liquid crystal panel having a thin film transistor for driver circuit and a method for fabricating thereof
US20010049064A1 (en) Photo mask for fabricating a thin film transistor liquid crystal display
KR20020036023A (en) manufacturing method of array panel for liquid crystal display
KR100890745B1 (en) Method of manufacturing a thin film transistor, and liquid crystal display
US6929888B2 (en) Photomask and exposure method for large scaled LCD device
KR101090246B1 (en) Thin film transistor array panel and method for manufacturing the panel
KR100679516B1 (en) Liquid crystal display and fabricating method of the same
KR20010011902A (en) Liquid crystal display and method for fabricating the same
JP3706033B2 (en) Manufacturing method of matrix substrate for liquid crystal
US8435722B2 (en) Method for fabricating liquid crystal display device
JPH0519297A (en) Liquid crystal panel, liquid crystal display device and production thereof
US20040126941A1 (en) Thin film transistor self-aligned to a light-shield layer
JP3071964B2 (en) Manufacturing method of liquid crystal display device
KR100961948B1 (en) Thin film transistor array panel, manufacturing method thereof, and liquid crystal display including the same
JP3105606B2 (en) Liquid crystal device manufacturing method
JPH03271720A (en) Production of thin-film transistor array of matrix type display device
JP2782829B2 (en) Method for manufacturing thin film transistor
JP2943331B2 (en) Exposure method and exposure apparatus
JPH03157624A (en) Production of thin-film transistor
JP2687479B2 (en) Manufacturing method of liquid crystal display device
JP3006994B2 (en) Active matrix substrate manufacturing method

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 19980217