JPH05166868A - Printed wiring board for wire bonding use - Google Patents
Printed wiring board for wire bonding useInfo
- Publication number
- JPH05166868A JPH05166868A JP3328597A JP32859791A JPH05166868A JP H05166868 A JPH05166868 A JP H05166868A JP 3328597 A JP3328597 A JP 3328597A JP 32859791 A JP32859791 A JP 32859791A JP H05166868 A JPH05166868 A JP H05166868A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- wiring pattern
- wire
- wire bonding
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ハイブリッドＩＣ等の
集積回路用基板に印刷・焼成された配線パターンと、基
板に搭載された電気素子の電極とを、金属ワイヤのワイ
ヤボンディングによって接続されて用いられる印刷配線
基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention connects a wiring pattern printed and fired on a substrate for an integrated circuit such as a hybrid IC and an electrode of an electric element mounted on the substrate by wire bonding of metal wires. The present invention relates to a printed wiring board used.
【０００２】[0002]
【従来の技術】一般に、セラミックなどの基板上に圧膜
回路形成技術を用いて、抵抗体、導体、絶縁層などの回
路素子パターンを形成し、能動素子、受動素子、を搭載
した電子部品（混成集積回路）は、ハイブリッドＩＣと
呼ばれている。この、ハイブリッドＩＣ用集積回路にお
ける基板上への配線パターンは、次のような操作によっ
て形成される。まずガラス成分を含む貴金属系ペースト
を、ヘラ状のもので基板上の配線パターンの形状をした
メッシュ部を持つマスク（スクリーン）の目に充填しつ
つ押圧し、基板に付着させる。そして基板からマスクを
取り外した後に、ペーストが印刷された基板を焼成する
ことにより、基板上に配線パターンが形成される。これ
らの操作をまとめてスクリーン印刷という。また上記の
ように印刷・焼成することによって形成された配線パタ
ーンの金属材料と、配線基板上に固定された（ダイボン
ディングされた）ＩＣチップの電極との電気的接続を行
う際には、金ワイヤ（熱圧着法による）やアルミニウム
ワイヤ（超音波接続法による）によるワイヤボンディン
グ接続法が一般的に用いられている。（電子技術 1983
Vol 25 No.8 ）2. Description of the Related Art Generally, an electronic component (active element, passive element) mounted with a circuit element pattern such as a resistor, a conductor, and an insulating layer is formed on a substrate such as ceramic by using a pressure film circuit forming technique. A hybrid integrated circuit) is called a hybrid IC. The wiring pattern on the substrate in this hybrid IC integrated circuit is formed by the following operation. First, a noble metal-based paste containing a glass component is pressed while being filled in the eyes of a mask (screen) having a spatula-shaped paste having a mesh portion in the shape of a wiring pattern on the substrate, and is attached to the substrate. Then, after removing the mask from the substrate, the substrate on which the paste is printed is baked to form a wiring pattern on the substrate. These operations are collectively called screen printing. In addition, when the metal material of the wiring pattern formed by printing and firing as described above and the electrode of the IC chip fixed (die bonded) on the wiring board are electrically connected, gold is used. A wire bonding connection method using a wire (by a thermocompression bonding method) or an aluminum wire (by an ultrasonic connection method) is generally used. (Electronics 1983
Vol 25 No.8)
【０００３】上記のようなワイヤボンディング接続法に
よる、ワイヤと、配線パターンに形成された金属材料と
の接続状態について，超音波接合法による接続を図４に
基づいて説明する。金を主成分とする配線パターンに形
成された金属材料と、アルミニウムワイヤとを接触させ
た状態で、金属材料とアルミニウムとの接触面に超音波
振動を与えながら圧力を加え、金属材料とアルミニウム
の接触界面で、金とアルミニウムの相互拡散を発生させ
る。すると、金を主成分とする配線パターンの金属材料
と、アルミニウムワイヤとの接触部に図４のように金属
化合物ＡｕＡｌ，Ａｕ2 Ａｌが形成され、配線パターン
の金属材料と、アルミニウムワイヤは機械的にも電気的
にも接続される。The connection state between the wire and the metal material formed on the wiring pattern by the wire bonding connection method as described above will be described with reference to FIG. 4 for connection by the ultrasonic bonding method. With the metal material formed in the wiring pattern containing gold as the main component and the aluminum wire in contact with each other, pressure is applied while applying ultrasonic vibration to the contact surface between the metal material and aluminum to apply the metal material and aluminum. At the contact interface, interdiffusion of gold and aluminum occurs. Then, the metal compounds AuAl and Au 2 Al are formed in the contact portion between the metal material of the wiring pattern containing gold as a main component and the aluminum wire as shown in FIG. 4, and the metal material of the wiring pattern and the aluminum wire are mechanical. It is also connected electrically.
【０００４】しかし、金を主成分とする配線パターンの
金属材料の、アルミニウムワイヤとの接触部は、配線パ
ターンの金属材料に含まれるガラス成分が存在し、この
状態でワイヤボンディングを行うと、アルミニウムワイ
ヤと配線パターンの金属材料との金属同士の接触面積が
減少する。このため配線パターン上にガラス成分が存在
しない場合に比べて、金属間化合物が形成されない部分
が増加する。結果としてアルミニウムワイヤと、金を主
成分とする配線パターンの金属材料との機械的結合力が
低下する事になり、アルミニウムワイヤと、金を主成分
とする配線パターンの金属材料との接続部において、そ
の接続強度が低下し、電気的抵抗も増加するという問題
が発生してしまう。However, at the contact portion of the metal material of the wiring pattern containing gold as a main component with the aluminum wire, the glass component contained in the metal material of the wiring pattern exists. The contact area between the metal of the wire and the metal material of the wiring pattern is reduced. Therefore, as compared with the case where the glass component does not exist on the wiring pattern, the portion where the intermetallic compound is not formed increases. As a result, the mechanical coupling force between the aluminum wire and the metal material of the wiring pattern containing gold as a main component is reduced, and at the connection portion between the aluminum wire and the metal material of the wiring pattern containing gold as a main component. However, there arises a problem that the connection strength is lowered and the electrical resistance is increased.
【０００５】上記問題を改善するための従来の技術（実
開平２−２２９９２）を、以下に説明する。図３に示す
ように配線パターン１のワイヤボンディングされる金属
材料表面に、金属メッキ層６を形成させる事によって、
前記金属材料表面を２層構造とする。そして金属メッキ
層６に、ＩＣチップ５の電極７をワイヤ４で接続する。
この方法では、ワイヤ４と金属メッキ層との接続部には
ガラス成分が介在していない。A conventional technique for improving the above-mentioned problem (Actual Kaihei No. 2-22992) will be described below. By forming the metal plating layer 6 on the surface of the metal material of the wiring pattern 1 to be wire-bonded as shown in FIG.
The surface of the metal material has a two-layer structure. Then, the electrode 7 of the IC chip 5 is connected to the metal plating layer 6 by the wire 4.
In this method, the glass component is not present at the connection between the wire 4 and the metal plating layer.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、金属メ
ッキ層には完全に除去できなかったメッキ液の残りかす
等の不純物が残っており、この不純物が金属メッキ層の
表面に存在すると、ワイヤ４と配線パターンとの機械的
結合力がやはり低下してしまう。又、ワイヤボンディン
グ時には超音波振動や熱、圧力等で、金属メッキ層が破
壊される可能性もある。本発明は、ワイヤボンディング
によって結合される金属ワイヤと配線パターンとの接続
部において、その接触する面積を金属同士の接触面積と
し、ワイヤボンディングにおける電気的接続を確実に行
うことを目的とする。However, impurities such as residues of the plating solution that could not be completely removed remain in the metal plating layer, and if these impurities are present on the surface of the metal plating layer, the wires 4 and The mechanical coupling force with the wiring pattern also decreases. Also, the metal plating layer may be destroyed by ultrasonic vibration, heat, pressure, etc. during wire bonding. It is an object of the present invention to ensure a reliable electrical connection in wire bonding by setting the contact area between the metal wires and the wiring pattern, which are joined by wire bonding, as the contact area between metals.
【０００７】[0007]
【課題を解決するための手段】金属とガラス成分を含む
ペースト材料が基板上に印刷、焼成されることによって
形成される配線パターンと、前記基板上の電気素子搭載
部に搭載される電気素子の電極とが、金属ワイヤのワイ
ヤボンディングによって接続されて用いられるワイヤボ
ンディング用印刷配線基板において、前記ペースト材料
の焼成温度より融点が高い金属片が、前記配線パターン
の前記電気素子搭載部近傍に一部を露出して埋め込まれ
ていることを特徴とする。A wiring pattern formed by printing and firing a paste material containing a metal and a glass component on a substrate and an electric element mounted on an electric element mounting portion on the substrate. In a printed wiring board for wire bonding, in which an electrode is used by being connected by wire bonding of a metal wire, a metal piece having a melting point higher than the firing temperature of the paste material is partially present in the vicinity of the electric element mounting portion of the wiring pattern. It is characterized by being exposed and embedded.
【０００８】[0008]
【作用】上記手段に示されるように、配線パターンのワ
イヤボンディングされる金属材料表面に、金属のみで構
成された金属片が一部を露出して埋め込まれているの
で、金属片と電気素子の電極とをワイヤボンディングで
接続することにより、配線パターンのワイヤボンディン
グされる金属材料表面とワイヤが、純粋な金属間化合物
によって接続される。したがって、ワイヤボンディング
について充分な機械的、電気的接続が得られる。同時
に、金属メッキ層に比べて金属片の金属原子は密の状態
にあるので、ワイヤボンディング時の超音波振動、熱、
圧力等で金属片が破壊されることもない。As described in the above means, since the metal piece composed of only metal is partially exposed and embedded in the surface of the metal material of the wiring pattern to be wire-bonded, the metal piece and the electric element By connecting the electrodes by wire bonding, the surface of the metal material of the wiring pattern to be wire-bonded and the wires are connected by a pure intermetallic compound. Therefore, sufficient mechanical and electrical connection can be obtained for wire bonding. At the same time, since the metal atoms of the metal piece are denser than the metal plating layer, ultrasonic vibration, heat, and
The metal piece is not destroyed by pressure or the like.
【０００９】[0009]
【実施例】続いて、本発明の実施例について図１、図２
に基づいて以下に説明する。まず第１の工程として、グ
リーンシートを焼成して形成されたアルミナ配線基板２
に、配線パターン１としてＡｇ−Ｐｄ、Ａｇ−Ｐｔ系の
ペースト材料（Ａｇ、Ｐｄ、Ｐｔ等の金属成分とガラス
成分を含んでいる）をスクリーン印刷する。そして第２
の工程として、配線パターン１に、アルミニウムワイヤ
４との接続部として、ペースト材料の焼成温度（約８５
０度Ｃ）以上の融点を持つ貴金属であるＡｇ、Ｐｄ、Ｐ
ｔ等の金属単体片３を埋め込む。この時、金属単体片３
は、ＩＣチップ５の電極７に対してワイヤボンディング
可能な程度に近傍に位置させている。第３の工程とし
て、金属単体片３が埋め込まれた配線パターン１を乾
燥、焼成させる。すると、配線パターン１に埋め込まれ
た金属単体片３は、配線パターン１の焼成時に配線パタ
ーン１のガラス成分に含まれるＢｉ2 Ｏ3 によって、配
線パターン１の金属成分と接続される。配線パターンの
金属と金属単体片の間にガラス成分が存在しても、２つ
の部材の接触面積は、ワイヤボンディングされる配線パ
ターンのワイヤとの接触面積に比べて著しく大きいの
で、ワイヤボンディング接触部ほど影響がない。EXAMPLES Next, examples of the present invention will be described with reference to FIGS.
It will be described below based on. First, as a first step, an alumina wiring board 2 formed by firing a green sheet
Then, an Ag-Pd or Ag-Pt-based paste material (including a metal component such as Ag, Pd, Pt and the like and a glass component) is screen-printed as the wiring pattern 1. And the second
In the step of, the baking temperature of the paste material (about 85
Ag, Pd, P, which are noble metals with a melting point of 0 ° C or higher
A single metal piece 3 such as t is embedded. At this time, the metal single piece 3
Are located near the electrode 7 of the IC chip 5 to the extent that wire bonding is possible. As the third step, the wiring pattern 1 in which the single metal piece 3 is embedded is dried and fired. Then, the metal single piece 3 embedded in the wiring pattern 1 is connected to the metal component of the wiring pattern 1 by Bi 2 O 3 contained in the glass component of the wiring pattern 1 when the wiring pattern 1 is fired. Even if there is a glass component between the metal of the wiring pattern and the metal single piece, the contact area between the two members is significantly larger than the contact area with the wire of the wiring pattern to be wire-bonded. Not much affected.
【００１０】第４の工程として、アルミナ配線基板２上
にＩＣチップ５をダイボンディングする事によって、Ｉ
Ｃチップ５が所定位置に固定される。そして、第５の工
程として、ダイボンディングされたＩＣチップ５の電極
７と配線パターン１に埋め込まれた金属単体片３間を、
超音波接合法を用いてアルミニウムワイヤ４でワイヤボ
ンディングする。この時にアルミニウムワイヤ４と金属
単体片３間の接続部にはガラス成分が存在せず、アルミ
ニウムワイヤ４と金属単体片３との接続部の全ての接触
面積が、金属同士の接触となっている。このためにアル
ミニウムワイヤ４と金属単体片３のみで固相状態におけ
る相互拡散が行われ、その接触部において純粋な金属間
化合物が形成される。このようなワイヤボンディングに
よって、ＩＣチップ５の電極７からアルミニウムワイヤ
４を介して、金属単体片３・配線パターン１までの電気
的接続が完了する。As a fourth step, the IC chip 5 is die-bonded on the alumina wiring substrate 2 to obtain I
The C chip 5 is fixed in place. Then, as a fifth step, between the electrode 7 of the die-bonded IC chip 5 and the metal single piece 3 embedded in the wiring pattern 1,
The aluminum wire 4 is wire-bonded using the ultrasonic bonding method. At this time, there is no glass component in the connection portion between the aluminum wire 4 and the metal single piece 3, and the entire contact area of the connection portion between the aluminum wire 4 and the metal single piece 3 is metal-to-metal contact. .. For this reason, mutual diffusion in the solid state is performed only by the aluminum wire 4 and the metal element piece 3, and a pure intermetallic compound is formed at the contact portion. By such wire bonding, electrical connection from the electrode 7 of the IC chip 5 to the metal single piece 3 and the wiring pattern 1 via the aluminum wire 4 is completed.
【００１１】なお、アルミニウムワイヤ４の代わりに金
線（熱圧着法による）を用いる場合は、金属単体片３の
材料に金を用いればよい。今回は、ペーストの焼成前に
アルミナ配線基板は焼成されていたが、基板がグリーン
シート（焼成前の基板）の状態でペーストを印刷し、基
板とペーストを同時に焼成する事も可能である。When a gold wire (by thermocompression bonding) is used instead of the aluminum wire 4, gold may be used as the material of the single metal piece 3. This time, the alumina wiring substrate was fired before firing the paste, but it is also possible to print the paste while the substrate is a green sheet (the substrate before firing) and fire the substrate and the paste at the same time.
【００１２】以下に本実施例の効果について説明する。
まず第１に、本願の配線基板はペースト材料の焼成前に
金属単体片３を埋め込めこんでおくだけで良いために、
焼成後、配線パターンのワイヤボンディングされる金属
材料表面に金属メッキを行うという複雑な工程を行う必
要がなくなり、工程が短縮される。第２には、図２に示
すように金属単体片３の形状により、配線パターン間を
つなぐジャンパー線的な使い方も可能となる。The effects of this embodiment will be described below.
First of all, since the wiring board of the present application only needs to embed the single metal piece 3 before firing the paste material,
After firing, there is no need to perform a complicated process of metal plating on the surface of the metal material to be wire-bonded in the wiring pattern, and the process is shortened. Secondly, the shape of the single metal piece 3 as shown in FIG. 2 enables use as a jumper wire for connecting the wiring patterns.
【００１３】[0013]
【発明の効果】本発明においては、ワイヤと、配線パタ
ーンのワイヤボンディングされる金属材料表面との接続
部において、金属のみで形成された金属片が、一部を露
出して金属材料に埋め込まれているため、接続部の接触
面積が金属同士の接触面積となり、ワイヤボンディング
の電気的接続を確実に行うことができる。According to the present invention, at the connecting portion between the wire and the surface of the metal material of the wiring pattern to be wire-bonded, the metal piece formed of only metal is partially exposed and embedded in the metal material. Therefore, the contact area of the connection portion becomes the contact area between the metals, and the electrical connection of wire bonding can be reliably performed.
【図１】 本発明によるワイヤボンディング用印刷配線
基板と電気素子との接続状態を示す断面図である。FIG. 1 is a cross-sectional view showing a connection state between a printed wiring board for wire bonding and an electric element according to the present invention.
【図２】 本発明によるワイヤボンディング用印刷配線
基板のうち金属片の形状を変更した実施例を示す斜視図
である。FIG. 2 is a perspective view showing an embodiment in which the shape of the metal piece is changed in the printed wiring board for wire bonding according to the present invention.
【図３】 従来技術における印刷配線基板と電気素子と
の接続状態を示す断面図である。FIG. 3 is a cross-sectional view showing a connection state between a printed wiring board and an electric element in a conventional technique.
【図４】 アルミニウムワイヤと、金を主成分とする配
線パターンの金属材料とがワイヤボンディングによって
接続された際の、接続状態を示す断面図である。FIG. 4 is a cross-sectional view showing a connection state when an aluminum wire and a metal material of a wiring pattern containing gold as a main component are connected by wire bonding.
１ ・・・配線パターン（金系、Ａｇ−Ｐｄ、Ａｇ−Ｐ
ｔ系ペースト材料） ２ ・・・アルミナ配線基板 ３ ・・・金属単体片 ４ ・・・ワイヤ（アルミニウム線、金線） ５ ・・・ＩＣチップ ６ ・・・金属メッキ層 ７ ・・・ＩＣチップ５の電極1 ... Wiring pattern (gold system, Ag-Pd, Ag-P
t-based paste material) 2 ... Alumina wiring board 3 ... Metal single piece 4 ... Wire (aluminum wire, gold wire) 5 ... IC chip 6 ... Metal plating layer 7 ... IC chip 5 electrodes
Claims (1)
板上に印刷、焼成されることによって形成される配線パ
ターンと、前記基板上の電気素子搭載部に搭載される電
気素子の電極とが、金属ワイヤのワイヤボンディングに
よって、電気的に接続されて用いられるワイヤボンディ
ング用印刷配線基板において、前記ペースト材料の焼成
温度より融点が高い金属片が、前記配線パターンの前記
電気素子搭載部近傍に一部を露出して埋め込まれている
ことを特徴とするワイヤボンディング用印刷配線基板。1. A wiring pattern formed by printing and firing a paste material containing a metal and a glass component on a substrate, and an electrode of an electric element mounted on an electric element mounting portion on the substrate, In a printed wiring board for wire bonding that is electrically connected and used by wire bonding of a metal wire, a metal piece having a melting point higher than the firing temperature of the paste material is partially present near the electric element mounting portion of the wiring pattern. A printed wiring board for wire bonding, wherein the printed wiring board is exposed and embedded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3328597A JPH05166868A (en) | 1991-12-12 | 1991-12-12 | Printed wiring board for wire bonding use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3328597A JPH05166868A (en) | 1991-12-12 | 1991-12-12 | Printed wiring board for wire bonding use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05166868A true JPH05166868A (en) | 1993-07-02 |
Family
ID=18212058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3328597A Pending JPH05166868A (en) | 1991-12-12 | 1991-12-12 | Printed wiring board for wire bonding use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05166868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08227917A (en) * | 1994-12-22 | 1996-09-03 | Toshiba Corp | Mounting structure of semiconductor element, liquid crystal display and semiconductor device |
-
1991
- 1991-12-12 JP JP3328597A patent/JPH05166868A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08227917A (en) * | 1994-12-22 | 1996-09-03 | Toshiba Corp | Mounting structure of semiconductor element, liquid crystal display and semiconductor device |
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