JPH0515677B2 - - Google Patents
Info
- Publication number
- JPH0515677B2 JPH0515677B2 JP14009489A JP14009489A JPH0515677B2 JP H0515677 B2 JPH0515677 B2 JP H0515677B2 JP 14009489 A JP14009489 A JP 14009489A JP 14009489 A JP14009489 A JP 14009489A JP H0515677 B2 JPH0515677 B2 JP H0515677B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- quartz ampoule
- crystals
- cadmium telluride
- cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000003708 ampul Substances 0.000 claims description 14
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 description 10
- 230000005855 radiation Effects 0.000 description 8
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14009489A JPH035399A (ja) | 1989-05-31 | 1989-05-31 | テルル化カドミウム結晶及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14009489A JPH035399A (ja) | 1989-05-31 | 1989-05-31 | テルル化カドミウム結晶及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH035399A JPH035399A (ja) | 1991-01-11 |
| JPH0515677B2 true JPH0515677B2 (enExample) | 1993-03-02 |
Family
ID=15260814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14009489A Granted JPH035399A (ja) | 1989-05-31 | 1989-05-31 | テルル化カドミウム結晶及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH035399A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2703696B1 (fr) * | 1993-04-08 | 1995-06-09 | Eurorad 2 6 Sarl | Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau. |
| FR2836931B1 (fr) * | 2002-03-05 | 2004-04-30 | Eurorad 2 6 | PROCEDE DE PRODUCTION DE CRISTAUX CdXTe SEMI-CONDUCTEURS A HAUTE RESISTIVITE ET MATERIAU CRISTALLIN RESULTANT |
| US7544343B2 (en) | 2004-11-18 | 2009-06-09 | Nippon Mining & Metals Co., Ltd. | CdTe system compound semiconductor single crystal |
-
1989
- 1989-05-31 JP JP14009489A patent/JPH035399A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH035399A (ja) | 1991-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20090053125A1 (en) | Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals | |
| Földvári et al. | Growth and properties of Bi2TeO5 single crystals | |
| JP4083449B2 (ja) | CdTe単結晶の製造方法 | |
| Schieber et al. | Purification, growth, and characterization of alpha mercuric-iodide crystals for gamma-ray detection | |
| Cardetta et al. | Growth and habit of GaSe crystals obtained from vapour by various methods | |
| CN108330543A (zh) | 一种N型SnSe单晶及其制备方法 | |
| Su et al. | Growth of ZnTe by physical vapor transport and traveling heater method | |
| KR101830524B1 (ko) | 대면적 2차원 금속-칼코겐화합물 단결정 및 이의 제조방법 | |
| US7537659B2 (en) | Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained | |
| Patel et al. | Growth of AgInSe2 thin films | |
| JPH0515677B2 (enExample) | ||
| Agarwal et al. | Growth of single crystals of WSe2 by sublimation method | |
| Hemmat et al. | Closed System Vapor Growth of Bulk CdS Crystals from the Elemental Constituents | |
| Shanks | The growth of magnesium germanide crystals | |
| JP2555847B2 (ja) | 低抵抗半導体結晶基板及びその製造方法 | |
| Arivuoli et al. | Growth of bismuth sulpho-iodide single crystals from vapour | |
| Spiesser et al. | Preparation and properties of two indium antimony selenides | |
| JPH0246560B2 (enExample) | ||
| JPH0416597A (ja) | 炭化珪素単結晶の製造方法 | |
| US3969182A (en) | Growth of mercuric iodide single crystals from dimethylsulfoxide | |
| US4559217A (en) | Method for vacuum baking indium in-situ | |
| Gospodinov | The growth of HgI2 crystals | |
| Kothiyal et al. | Preparation of non-stoichiometric arsenic sulphide crystals As2S2. 15, and measurement of their electrical conductivity | |
| Wiedemeier et al. | Physical vapor transport and crystal growth of GeSexTe1− x solid solutions | |
| Arivuoli et al. | Growth of bismuth seleno iodide single crystals from the vapour |