JPH035399A - テルル化カドミウム結晶及びその製造方法 - Google Patents

テルル化カドミウム結晶及びその製造方法

Info

Publication number
JPH035399A
JPH035399A JP14009489A JP14009489A JPH035399A JP H035399 A JPH035399 A JP H035399A JP 14009489 A JP14009489 A JP 14009489A JP 14009489 A JP14009489 A JP 14009489A JP H035399 A JPH035399 A JP H035399A
Authority
JP
Japan
Prior art keywords
cadmium telluride
crystal
quartz ampoule
present
telluride crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14009489A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0515677B2 (enExample
Inventor
Satoru Seto
瀬戸　悟
Akikazu Tanaka
明和 田中
Kazuhiko Suzuki
和彦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP14009489A priority Critical patent/JPH035399A/ja
Publication of JPH035399A publication Critical patent/JPH035399A/ja
Publication of JPH0515677B2 publication Critical patent/JPH0515677B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP14009489A 1989-05-31 1989-05-31 テルル化カドミウム結晶及びその製造方法 Granted JPH035399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14009489A JPH035399A (ja) 1989-05-31 1989-05-31 テルル化カドミウム結晶及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14009489A JPH035399A (ja) 1989-05-31 1989-05-31 テルル化カドミウム結晶及びその製造方法

Publications (2)

Publication Number Publication Date
JPH035399A true JPH035399A (ja) 1991-01-11
JPH0515677B2 JPH0515677B2 (enExample) 1993-03-02

Family

ID=15260814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14009489A Granted JPH035399A (ja) 1989-05-31 1989-05-31 テルル化カドミウム結晶及びその製造方法

Country Status (1)

Country Link
JP (1) JPH035399A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2703696A1 (fr) * 1993-04-08 1994-10-14 Eurorad 2 6 Sarl Procédé d'obtention d'un matériau cristallin dopé à base de tellure et de cadmium et détecteur comportant un tel matériau.
FR2836931A1 (fr) * 2002-03-05 2003-09-12 Eurorad 2 6 PROCEDE DE PRODUCTION DE CRISTAUX CdXTe SEMI-CONDUCTEURS A HAUTE RESISTIVITE ET MATERIAU CRISTALLIN RESULTANT
WO2006054580A1 (ja) * 2004-11-18 2006-05-26 Nippon Mining & Metals Co., Ltd. ＣｄＴｅ系化合物半導体単結晶

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2703696A1 (fr) * 1993-04-08 1994-10-14 Eurorad 2 6 Sarl Procédé d'obtention d'un matériau cristallin dopé à base de tellure et de cadmium et détecteur comportant un tel matériau.
FR2836931A1 (fr) * 2002-03-05 2003-09-12 Eurorad 2 6 PROCEDE DE PRODUCTION DE CRISTAUX CdXTe SEMI-CONDUCTEURS A HAUTE RESISTIVITE ET MATERIAU CRISTALLIN RESULTANT
US7067008B2 (en) 2002-03-05 2006-06-27 Eurorad 2-6 Sa Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material
WO2006054580A1 (ja) * 2004-11-18 2006-05-26 Nippon Mining & Metals Co., Ltd. ＣｄＴｅ系化合物半導体単結晶
US7544343B2 (en) 2004-11-18 2009-06-09 Nippon Mining & Metals Co., Ltd. CdTe system compound semiconductor single crystal

Also Published As

Publication number Publication date
JPH0515677B2 (enExample) 1993-03-02

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