FR2703696B1 - Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau. - Google Patents

Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau.

Info

Publication number
FR2703696B1
FR2703696B1 FR9304355A FR9304355A FR2703696B1 FR 2703696 B1 FR2703696 B1 FR 2703696B1 FR 9304355 A FR9304355 A FR 9304355A FR 9304355 A FR9304355 A FR 9304355A FR 2703696 B1 FR2703696 B1 FR 2703696B1
Authority
FR
France
Prior art keywords
tellure
cadmium
detector
obtaining
doped crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9304355A
Other languages
English (en)
Other versions
FR2703696A1 (fr
Inventor
Siffert Paul
Hage-Ali Makram
Koebel Jean-Marie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EURORAD 2 6 SARL
Original Assignee
EURORAD 2 6 SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EURORAD 2 6 SARL filed Critical EURORAD 2 6 SARL
Priority to FR9304355A priority Critical patent/FR2703696B1/fr
Publication of FR2703696A1 publication Critical patent/FR2703696A1/fr
Application granted granted Critical
Publication of FR2703696B1 publication Critical patent/FR2703696B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR9304355A 1993-04-08 1993-04-08 Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau. Expired - Fee Related FR2703696B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9304355A FR2703696B1 (fr) 1993-04-08 1993-04-08 Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9304355A FR2703696B1 (fr) 1993-04-08 1993-04-08 Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau.

Publications (2)

Publication Number Publication Date
FR2703696A1 FR2703696A1 (fr) 1994-10-14
FR2703696B1 true FR2703696B1 (fr) 1995-06-09

Family

ID=9446031

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9304355A Expired - Fee Related FR2703696B1 (fr) 1993-04-08 1993-04-08 Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau.

Country Status (1)

Country Link
FR (1) FR2703696B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2836931B1 (fr) 2002-03-05 2004-04-30 Eurorad 2 6 PROCEDE DE PRODUCTION DE CRISTAUX CdXTe SEMI-CONDUCTEURS A HAUTE RESISTIVITE ET MATERIAU CRISTALLIN RESULTANT
FR2975707B1 (fr) * 2011-05-24 2014-07-11 Ecole Polytech Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes.
CN115417385A (zh) * 2022-08-24 2022-12-02 先导薄膜材料（广东）有限公司 掺杂碲化镉的生产工艺

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817799A (en) * 1953-11-25 1957-12-24 Rca Corp Semi-conductor devices employing cadmium telluride
FR2228540B1 (fr) * 1973-05-11 1978-02-10 Commissariat Energie Atomique
US4141777A (en) * 1974-07-19 1979-02-27 Matveev Oleg A Method of preparing doped single crystals of cadmium telluride
FR2314759A1 (fr) * 1975-06-19 1977-01-14 Commissariat Energie Atomique Tellurure de cadmium compense au magnesium ou au beryllium eventuellement dope et ses applications
JPH035399A (ja) * 1989-05-31 1991-01-11 Sumitomo Metal Mining Co Ltd テルル化カドミウム結晶及びその製造方法
JP2940075B2 (ja) * 1990-05-25 1999-08-25 松下電器産業株式会社 ＣｄＴｅ薄膜の形成装置及び形成方法
JPH0570298A (ja) * 1991-09-09 1993-03-23 Sumitomo Metal Mining Co Ltd フオトリフラクテイブ素子用のＣｄＴｅ単結晶とその製造方法

Also Published As

Publication number Publication date
FR2703696A1 (fr) 1994-10-14

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Legal Events

Date Code Title Description
ST Notification of lapse