FR2975707B1 - Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes. - Google Patents

Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes.

Info

Publication number
FR2975707B1
FR2975707B1 FR1154529A FR1154529A FR2975707B1 FR 2975707 B1 FR2975707 B1 FR 2975707B1 FR 1154529 A FR1154529 A FR 1154529A FR 1154529 A FR1154529 A FR 1154529A FR 2975707 B1 FR2975707 B1 FR 2975707B1
Authority
FR
France
Prior art keywords
crystalline solid
associated device
growing
growing crystalline
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1154529A
Other languages
English (en)
Other versions
FR2975707A1 (fr
Inventor
Jean-Christophe Chanteloup
Narine Ananyan
Vladimir Gevorgyan
Mikayel Arzakantsyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Polytechnique
Original Assignee
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique filed Critical Ecole Polytechnique
Priority to FR1154529A priority Critical patent/FR2975707B1/fr
Priority to EP12731036.5A priority patent/EP2714968A1/fr
Priority to PCT/FR2012/051136 priority patent/WO2012160306A1/fr
Priority to US14/119,619 priority patent/US20140083351A1/en
Priority to JP2014511936A priority patent/JP2014516020A/ja
Publication of FR2975707A1 publication Critical patent/FR2975707A1/fr
Application granted granted Critical
Publication of FR2975707B1 publication Critical patent/FR2975707B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/005—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
FR1154529A 2011-05-24 2011-05-24 Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes. Active FR2975707B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1154529A FR2975707B1 (fr) 2011-05-24 2011-05-24 Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes.
EP12731036.5A EP2714968A1 (fr) 2011-05-24 2012-05-22 Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes
PCT/FR2012/051136 WO2012160306A1 (fr) 2011-05-24 2012-05-22 Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes
US14/119,619 US20140083351A1 (en) 2011-05-24 2012-05-22 Process for the growth of a crystalline solid, associated crystalline solid and device
JP2014511936A JP2014516020A (ja) 2011-05-24 2012-05-22 結晶質固体の成長方法、関連する結晶質固体及びデバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1154529A FR2975707B1 (fr) 2011-05-24 2011-05-24 Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes.

Publications (2)

Publication Number Publication Date
FR2975707A1 FR2975707A1 (fr) 2012-11-30
FR2975707B1 true FR2975707B1 (fr) 2014-07-11

Family

ID=46420352

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1154529A Active FR2975707B1 (fr) 2011-05-24 2011-05-24 Procede de croissance d'un solide cristallin, solide cristallin et dispositif associes.

Country Status (5)

Country Link
US (1) US20140083351A1 (fr)
EP (1) EP2714968A1 (fr)
JP (1) JP2014516020A (fr)
FR (1) FR2975707B1 (fr)
WO (1) WO2012160306A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2703696B1 (fr) * 1993-04-08 1995-06-09 Eurorad 2 6 Sarl Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau.
US5650008A (en) 1995-12-01 1997-07-22 Advanced Materials Processing, Llc Method for preparing homogeneous bridgman-type single crystals
US6402840B1 (en) * 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
JP2005327997A (ja) * 2004-05-17 2005-11-24 Akio Ikesue 複合レーザー素子及びその素子を用いたレーザー発振器

Also Published As

Publication number Publication date
JP2014516020A (ja) 2014-07-07
WO2012160306A1 (fr) 2012-11-29
FR2975707A1 (fr) 2012-11-30
EP2714968A1 (fr) 2014-04-09
US20140083351A1 (en) 2014-03-27

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