JPH0515674B2 - - Google Patents
Info
- Publication number
- JPH0515674B2 JPH0515674B2 JP63087918A JP8791888A JPH0515674B2 JP H0515674 B2 JPH0515674 B2 JP H0515674B2 JP 63087918 A JP63087918 A JP 63087918A JP 8791888 A JP8791888 A JP 8791888A JP H0515674 B2 JPH0515674 B2 JP H0515674B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- transport tray
- growth chamber
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087918A JPH01261296A (ja) | 1988-04-08 | 1988-04-08 | 分子線エピタキシー装置 |
| EP92117113A EP0529687B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
| DE68926577T DE68926577T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
| DE68916457T DE68916457T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie. |
| EP89105248A EP0335267B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
| TW080105276A TW202485B (enExample) | 1988-03-30 | 1989-03-24 | |
| US07/329,313 US4944246A (en) | 1988-03-30 | 1989-03-27 | Molecular beam epitaxy apparatus |
| CA000594977A CA1333038C (en) | 1988-03-30 | 1989-03-29 | Molecular beam epitaxy apparatus |
| KR1019890004152A KR930010750B1 (ko) | 1988-03-30 | 1989-03-30 | 분자선 에피택시 장치 |
| CA000616594A CA1333039C (en) | 1988-03-30 | 1993-03-30 | Molecular beam epitaxy apparatus |
| KR1019930013044A KR930010751B1 (ko) | 1988-03-30 | 1993-07-09 | 분자선 에피택시 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087918A JPH01261296A (ja) | 1988-04-08 | 1988-04-08 | 分子線エピタキシー装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01261296A JPH01261296A (ja) | 1989-10-18 |
| JPH0515674B2 true JPH0515674B2 (enExample) | 1993-03-02 |
Family
ID=13928302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63087918A Granted JPH01261296A (ja) | 1988-03-30 | 1988-04-08 | 分子線エピタキシー装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261296A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016072256A (ja) * | 2014-09-26 | 2016-05-09 | 株式会社荏原製作所 | 基板処理装置及び基板処理方法 |
-
1988
- 1988-04-08 JP JP63087918A patent/JPH01261296A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01261296A (ja) | 1989-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1195795B1 (en) | Vacuum apparatus and method | |
| US4717461A (en) | System and method for processing workpieces | |
| US7077614B1 (en) | Sorting/storage device for wafers and method for handling thereof | |
| US7762208B2 (en) | Loading and unloading apparatus for a coating device | |
| US4412771A (en) | Sample transport system | |
| US4944246A (en) | Molecular beam epitaxy apparatus | |
| US20040197174A1 (en) | Method and apparatus for loading a batch of wafers into a wafer boat | |
| US6318957B1 (en) | Method for handling of wafers with minimal contact | |
| JP2003332250A (ja) | 炉内でウェハをバッチ処理するための方法および装置 | |
| KR19980025056A (ko) | 기판처리장치, 기판반송기 및 기판반송장치 | |
| CN109712923A (zh) | 一种晶圆周转装置及晶圆周转方法 | |
| EP0211292A2 (en) | Molecular beam epitaxy apparatus | |
| US3940296A (en) | Method for growing epitaxial layers from the liquid phase | |
| JP4383636B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
| JPH01261296A (ja) | 分子線エピタキシー装置 | |
| JP2509170B2 (ja) | 半導体ウェハ処理システム | |
| JP3380570B2 (ja) | 搬送装置 | |
| JP2019186536A (ja) | 自動搬送システムを具備するエピタキシープロセスシステム及びその自動搬送方法 | |
| JP2583675Y2 (ja) | 薄膜気相成長装置 | |
| US4699085A (en) | Chemical beam epitaxy system | |
| US6273946B1 (en) | Method for production of multi-layered epitaxially grown crystal and apparatus therefor | |
| JP2817356B2 (ja) | 分子線結晶成長装置およびそれを用いる結晶成長方法 | |
| JP2543795Y2 (ja) | 気相成長装置 | |
| WO2025018057A1 (ja) | 気相成長装置 | |
| JPH05267432A (ja) | 半導体製造装置及びそのウェーハカセット棚 |